Patents by Inventor Jing Yi

Jing Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110090713
    Abstract: A flexible backlight module includes a light source module and a flexible light guide panel, wherein the flexible light guide panel has a light incident surface, a light reflecting surface, and a light outgoing surface. The light incident surface of the flexible light guide panel is directly connected and thereby optically coupled to the light source module so that the light emitted by the light source module can be completely coupled to the flexible light guide panel. Consequently, the loss of light is reduced while the luminous efficiency of light is increased. Light entering the flexible light guide panel is reflected by the light reflecting surface to the light outgoing surface and then projected outward. The flexible light guide panel can be curved as needed thanks to its flexibility and thus features a wide application range.
    Type: Application
    Filed: July 8, 2008
    Publication date: April 21, 2011
    Applicant: Helio Optoelectronics Corporation
    Inventors: Ming-Hung Chen, Jing-Yi Chen
  • Patent number: 7919917
    Abstract: A top-emitting OLED display and fabrication method thereof are provided. The top-emitting OLED display includes providing a handling substrate. A composite layer is formed on the handling substrate. An organic light emitting unit is formed on the composite layer. A top electrode is formed on the organic light emitting unit. A reflective type display and fabrication method thereof are provided. The reflective type display includes providing a handling substrate. A composite layer is formed on the handling substrate, a thin film transistor array is formed on the composite layer.
    Type: Grant
    Filed: January 22, 2009
    Date of Patent: April 5, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Liang-Hsiang Chen, Jing-Yi Yan, Jia-Chong Ho
  • Publication number: 20110044035
    Abstract: A parallel bridge circuit structure and a high-voltage parallel bridge circuit structure are disclosed. The parallel bridge circuit structure includes a first bridge circuit and a second bridge circuit. The first bridge circuit includes a plurality of first diodes, and the second bridge circuit includes a plurality of second diodes. Each of the second diodes is exclusively connected to one of the first diodes in parallel. With the design of the parallel connection between the first bridge circuit and the second bridge circuit, break of the entire circuit caused by a damaged diode is prevented. Moreover, with the aid of the AC signal phase delay circuit structure, the output voltage of the parallel bridge circuit structure can be stable and continuous voltage, while the high-voltage parallel bridge circuit structure includes a plurality of parallel bridge circuit structures so as to endure a high voltage input.
    Type: Application
    Filed: April 16, 2008
    Publication date: February 24, 2011
    Applicant: Helio Optoelectronics Corporation
    Inventors: Ming-Hung Chen, Shih-Yi Wen, Hsin-Tai Lin, Jing-Yi Chen
  • Publication number: 20110014400
    Abstract: A method of forming a structure useful in all forms of deposited metals, elemental metals, metal alloys, metal compounds, metal systems, including refractory metals such as tungsten and tantalum is provided. The structure generally comprises a substrate, a first layer formed atop the substrate, and a second layer formed atop the first layer. The first layer comprises a metal, which can be chromium, gold, platinum, aluminum, nickel, or copper. The second layer comprises a metal, elemental metal, metal alloy, metal compound, or metal system comprising a refractory metal such as tungsten or tantalum. The substrate can be a silicon, quartz or glass, metal, metal oxide or nitride.
    Type: Application
    Filed: January 4, 2010
    Publication date: January 20, 2011
    Inventors: Jing-Yi Huang, Laurence P. Sadwick
  • Patent number: 7851800
    Abstract: A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: December 14, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Tarng-Shiang Hu, Yi-Kai Wang, Jing-Yi Yan, Tsung-Hsien Lin, Jia-Chong Ho
  • Publication number: 20100308406
    Abstract: A thin film transistor is provided. The thin film transistor includes a gate, at least an inorganic material layer, at least one dielectric layer, a source, a drain, and an active layer. The active layer is located on the substrate. The source and the drain cover a part of the active layer and a part of the substrate. A channel region exists between the source and the drain. The inorganic material layer is filled into the channel region. The dielectric layer at least including an organic material covers the inorganic material, the source and the drain. The gate is disposed on the dielectric layer.
    Type: Application
    Filed: August 19, 2010
    Publication date: December 9, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jing-Yi Yan, Liang-Hsiang Chen
  • Publication number: 20100277932
    Abstract: A halation-free light-emitting diode holder includes a body and a retaining portion. The body has a die holder, which includes a first surface, a second surface, and an opened end. The retaining portion is provided on the second surface. By using the retaining portion, the optical gel in the die holder is blocked from capillary movement up along the second surface. Furthermore, having nano-material layers further formed on the second surface or having the area of the first surface made greater than the area of the opened-end also prevents the optical gel from climbing along the second surface. Thereby, a light halation circling a light pattern of the resultant light-emitting diode is avoided and the light-emitting diode is improved in luminance uniformity.
    Type: Application
    Filed: January 23, 2008
    Publication date: November 4, 2010
    Applicant: Helio Optoelectronics Corporation
    Inventors: Ming-Hung Chen, Shih-Yi Wen, Hsin-Tai Lin, Jing-Yi Chen
  • Patent number: 7816233
    Abstract: The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.
    Type: Grant
    Filed: October 7, 2005
    Date of Patent: October 19, 2010
    Assignee: Sino-American Silicon Products Inc.
    Inventors: Jer-Liang Yeh, Jing-Yi Huang, Wen-Ching Hsu, Ya-Lan Ho, Sung-Lin Hsu, Jung-Tsung Wang
  • Publication number: 20100258346
    Abstract: A package of an environmentally sensitive electronic device including a first substrate, a second substrate, an environmentally sensitive electronic device, a plurality of barrier structures, and a fill is provided. The second substrate is disposed above the first substrate. The environmentally sensitive electronic device is disposed on the first substrate and located between the first substrate and the second substrate. The barrier structures are disposed between the first substrate and the second substrate, wherein the barrier structures surround the environmental sensitive electronic device, and the water vapor transmission rate of the barrier structures is less than 10?1 g/m2/day. The fill is disposed between the first substrate and the second substrate and covers the environmentally sensitive electronic device and the barrier structures.
    Type: Application
    Filed: June 19, 2009
    Publication date: October 14, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Kuang-Jung Chen, Jia-Chong Ho, Jing-Yi Yan, Shu-Tang Yeh
  • Patent number: 7812344
    Abstract: A thin film transistor is provided. The thin film transistor includes a gate, at least one inorganic material layer, at least one dielectric layer, a source, a drain and an active layer. The gate is disposed on the substrate. The inorganic material layer covers the gate. The dielectric layer including at least one organic material covers the substrate and has an opening exposing the inorganic material layer on the gate. The source and the drain are disposed on the dielectric layer and a part of the inorganic layer exposed by the opening respectively. A channel region exists between the source and the drain. The active layer is disposed on the channel region.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: October 12, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Jing-Yi Yan, Liang-Hsiang Chen
  • Patent number: 7786500
    Abstract: The present invention is an LED lamp lens, on which orderly arranged surface plural protuberances. And with the differences of light perviousness, a particular luminous pattern of the LED lamp is displayed when the LED lamp is turned on.
    Type: Grant
    Filed: April 2, 2008
    Date of Patent: August 31, 2010
    Assignee: Everlight Electronics Co., Ltd.
    Inventors: Jing-Yi Tsai, Chun-Chih Liang
  • Publication number: 20100216460
    Abstract: Techniques for efficiently performing public land mobile network (PLMN) list generation or PLMN search on user equipment for use in a mobile communication system are described. The user equipment is operating in a plurality of supported modes and each supported mode includes a plurality of frequency bands. The user equipment includes an antenna, two RF transceivers and a processor. The RF transceivers are coupled to the antenna for operating in the operating frequency bands via the antenna. The processor coupled to the RF transceivers receives a request requesting PLMN list generation or PLMN search, determines whether both or either of the RF transceivers are available for handling the PLMN list generation or PLMN search, respectively directs the RF transceivers to generate a PLMN list or perform a search for at least one selected operating frequency band according to the request and a dispatch rule, and provides a corresponding execution result.
    Type: Application
    Filed: February 23, 2009
    Publication date: August 26, 2010
    Applicant: MEDIATEK INC.
    Inventor: Jing-Yi Wu
  • Publication number: 20100164369
    Abstract: A packaging method of an organic light emitting diode (OLED) is described. First, a substrate is provided, and the substrate has the OLED device formed thereon. Thereafter, at least one protection layer is formed on the substrate, so as to cover the peripheral sidewall of the OLED device entirely. The step of forming the protection layer includes forming an organic layer on the substrate, and then forming a metal layer on the organic layer, wherein the metal layer at least covers a sidewall of the OLED device. Afterwards, an oxidation treatment is performed, so as to oxidize a portion of the metal layer.
    Type: Application
    Filed: June 19, 2009
    Publication date: July 1, 2010
    Applicant: Industrial Technology Research Institute
    Inventors: Shu-Tang Yeh, Jing-Yi Yan, Kung-Yu Cheng
  • Patent number: 7741163
    Abstract: A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.
    Type: Grant
    Filed: September 19, 2006
    Date of Patent: June 22, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Tarng-Shiang Hu, Yi-Kai Wang, Jing-Yi Yan, Tsung-Hsien Lin, Jia-Chong Ho
  • Publication number: 20100152868
    Abstract: A motion control servo loop apparatus, comprising: a feed-forward control module, and a proportional-integral-derivative (PID) control loop and a compensation adder. The feed-forward control module is capable of generating a feed-forward compensation. The PID control loop further comprises: a proportional control module, an integral control module and a derivative control module. The proportional control module is capable of generating a proportional compensation. The derivative control module is capable of generating a derivative compensation. The integral control module uses a digital differential analyzer (DDA) algorithm to perform integration for accumulated errors with respect to each sampling clock at each DDA pulse and thus output an accumulated error, which is then processed to generate an integral compensation.
    Type: Application
    Filed: May 15, 2009
    Publication date: June 17, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ying-Min Chen, Wen-Chuan Chen, Jing-Yi Huang, Cheng-Xue Wu, Chia-Ching Lin, Wan-Kai Shen
  • Publication number: 20100148654
    Abstract: A substrate board, a fabricating method thereof, and a display using the same are provided. The substrate board includes a substrate having at least a rigid area and at least a flexible area, and at least an electronic component disposed on a surface of the substrate, wherein the rigid area is thicker than the flexible area. A patterned high-extensive material may be additionally disposed on the substrate to improve reliability thereof. The rigid area and the flexible area may be formed by molds or cutters. By using an above structure, the electronic component is less affected when the substrate is under stress, so that good characteristics are maintained.
    Type: Application
    Filed: April 15, 2009
    Publication date: June 17, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jing-Yi Yan, Shu-Tang Yeh
  • Publication number: 20100127270
    Abstract: A thin film transistor is provided. The thin film transistor includes a gate, at least one inorganic material layer, at least one dielectric layer, a source, a drain and an active layer. The gate is disposed on the substrate. The inorganic material layer covers the gate. The dielectric layer including at least one organic material covers the substrate and has an opening exposing the inorganic material layer on the gate. The source and the drain are disposed on the dielectric layer and a part of the inorganic layer exposed by the opening respectively. A channel region exists between the source and the drain. The active layer is disposed on the channel region.
    Type: Application
    Filed: February 17, 2009
    Publication date: May 27, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jing-Yi Yan, Liang-Hsiang Chen
  • Publication number: 20100084636
    Abstract: A composition for photosensitive dielectric material is provided. The composition includes 4 to 10 percent by weight of a polymer material, 1.5 to 10 percent by weight of a crosslinking agent, 0.32 to 2 percent by weight of a photoacid generator (PAG) and 78 to 94.18 percent by weight of solvent, based on a total weight of the composition.
    Type: Application
    Filed: April 20, 2009
    Publication date: April 8, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Mei-Ru Lin, Jing-Yi Yan, Liang-Hsiang Chen, Chin-Lung Liao
  • Publication number: 20100027534
    Abstract: A system for handling packet-switched data transmission is provided. The system includes a first RF module, a second RF module, a first subscriber identity card camping on a cell via the first RF module, a second subscriber identity card camping on the same cell or a different cell via the second RF module and a load balancing unit. The load balancing unit receives an uplink IP packet, determines one subscriber identity card from the first and second subscriber identity cards when the uplink IP packet comprises information regarding an unestablished connection of a recognized application, and transmits the uplink IP packet to a destination via the determined subscriber identity card and the RF module corresponding to the determined subscriber identity card.
    Type: Application
    Filed: May 11, 2009
    Publication date: February 4, 2010
    Applicant: MEDIATEK INC.
    Inventors: Jing-Yi Wu, Chen-Hsuan Lee, Li-Chi Huang, Ying-Chieh Liao
  • Publication number: 20090271981
    Abstract: A method for fabricating a device with a flexible substrate includes providing a rigid substrate at first. Next, an interfacing layer can be formed on the rigid substrate, and then a flexible substrate is directly formed on the interfacing layer. The flexible substrate fully contacts the interfacing layer. A device structure is then formed on the flexible substrate.
    Type: Application
    Filed: July 2, 2009
    Publication date: November 5, 2009
    Applicant: Industrial Technology Research Institute
    Inventors: TAMG-SHIANG HU, Jing-Yi Yan, Jia-Chong Ho, Cheng-Chung Lee