Abstract: Provided is a vehicle thermal management system, including: an HVAC subsystem thermally connected to a passenger compartment; and a powertrain cooling subsystem thermally connected to a powertrain component.

Abstract: A pixel includes: a light emitting element; a first transistor including a gate electrode electrically connected to a first node, a second node to which a first power voltage for driving the light emitting element is to be applied, and a third node electrically connected to the light emitting element; and a bias control transistor configured to be controlled in operating timing thereof by a bias control signal, and configured to switch electrical connection between the second node and a bias power line for transmitting a bias voltage. In one frame period, a voltage level of the bias voltage to be applied to the second node sequentially increases.

Abstract: A vehicular heat management system includes a refrigerant circulation line configured to generate hot energy or cold energy depending on a flow direction of a refrigerant, a heater core side coolant circulation line configured to transfer refrigerant heat generated in the refrigerant circulation line to a heater core to heat a passenger compartment, and a battery side coolant circulation line configured to receive coolant heat of the heater core side coolant circulation line via a coolant and then circulate the coolant through a battery to preheat the battery.

Abstract: A gene amplification chip includes a chamber layer, a cover layer, a bottom layer, an inlet, and an outlet. The chamber layer has a first passage and through holes which are formed on one side of the first passage. The cover layer is disposed on one side of the chamber layer and has a cover channel formed to communicate with the first passage and the through holes, wherein the cover channel, the first passage and the through holes allow passage of liquids in a divided manner. The bottom layer is disposed on another side of the chamber layer and has a bottom channel formed to communicate with the first passage and the through holes. The inlet is formed in the cover layer and communicates with the cover channel. The outlet communicates with any one of the cover channel and the bottom channel.

Abstract: A memory device, and a manufacturing method of the memory device, includes a stack structure including alternately stacked first and second material layers. The memory device also includes a vertical hole extending through the stack structure in a vertical direction, isolation patterns protruding from side surfaces of the first material layers formed inside the vertical hole, and a blocking layer formed along surfaces of the protruding isolation patterns and the second material layers. The memory device further includes a barrier layer formed along a surface of the blocking layer and charge trap layers formed between protrusion parts of the barrier layer.

Abstract: A method includes calculating whether a quantity of the PMs accumulated in a PF is at or above a risk level at which damage to the PF is caused when regenerating the PF, calculating a driving condition index by accumulating a weighting factor for a driving condition under which there is a likelihood of causing the damage to the PF, when the amount of accumulated PMs is at or above the risk level; calculating a temperature index in accordance with a temperature of the PF and a PM index in accordance with the quantity of the accumulated PMs when the quantity of the accumulated PMs is at or above the risk level; calculating a degradation condition index considering the driving condition index, the temperature of the PF, and the quantity of accumulated PMs; and changing a regeneration period of the PF according to the degradation condition index.

Abstract: The present invention relates to a yeast extract having a high tripeptide content and a high dry matter content using a yeast cell containing tripeptide and a method for preparing the same.

Abstract: There are provided a semiconductor memory device and a manufacturing method of a semiconductor memory device. The manufacturing method of the semiconductor memory device includes: stacking a plurality of first material layers and a plurality of second material layers over a preliminary doped semiconductor structure; forming a blocking insulating layer, a data storage layer, a tunnel insulating layer, and a channel layer, which penetrate the plurality of first and second material layers, and extend to the inside of the preliminary doped semiconductor structure; forming a slit penetrating the plurality of first and second material layers; forming a protective structure as a double layer or a single layer on a sidewall of the slit; and forming a doped channel contact layer which penetrates a portion of the preliminary doped semiconductor structure in a direction intersecting the channel layer, and is in contact with the channel layer.

Abstract: The present invention relates to a newly isolated bacterium belonging to the genus Microbacterium, a composition for producing psicose comprising the strain, and a method for producing psicose using the same.

Abstract: A method for fabricating a semiconductor device includes: forming a first multi-layer stack including liner layers and a source sacrificial layer over a lower structure; forming a second multi-layer stack including dielectric layers and sacrificial layers over the first multi-layer stack; forming a vertical contact recess extending through the second multi-layer stack and the source sacrificial layer; replacing the source sacrificial layer with a source contact layer; forming a carbon-containing spacer on sidewall of the vertical contact recess; replacing the sacrificial layers with conductive layers; and forming a source contact plug in the vertical contact recess.

Abstract: A semiconductor device includes a cell array including a source structure, a peripheral circuit, an interconnection structure located between the cell array and the peripheral circuit and electrically coupled to the peripheral circuit, and a decoupling structure configured to prevent a coupling capacitor that occurs between the cell array and the interconnection structure.

Abstract: A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.

Abstract: A semiconductor device includes: an alternating stack that is disposed over a lower structure and includes gate electrodes and dielectric layers which are staked alternately; a memory stack structure that includes a channel layer extending to penetrate through the alternating stack, and a memory layer surrounding the channel layer; a source contact layer in contact with a lower outer wall of the vertical channel layer and disposed between the lower structure and the alternating stack; a source contact plug spaced apart from the memory stack structure and extending to penetrate through the alternating stack; and a sealing spacer suitable for sealing the gate electrodes and disposed between the source contact plug and the gate electrodes. The sealing spacer has an etch resistance that is different from an etch resistance of the dielectric layers.

Abstract: A semiconductor device includes a stacked structure including conductive layers and insulating layers alternately stacked with each other, and a channel layer passing through the stacked structure, wherein the channel layer is a single layer, the single layer including a first GIDL region, a cell region, and a second GIDL region, and the first GIDL region has a greater thickness than each of the cell region and the second GIDL region.

Abstract: A method of manufacturing a semiconductor device includes forming a cell chip including a first substrate, a source layer on the first substrate, a stacked structure on the source layer, and a channel layer passing through the stacked structure and coupled to the source layer, flipping the cell chip, exposing a rear surface of the source layer by removing the first substrate from the cell chip, performing surface treatment on the rear surface of the source layer to reduce a resistance of the source layer, forming a peripheral circuit chip including a second substrate and a circuit on the second substrate, and bonding the cell chip including the source layer with a reduced resistance to the peripheral circuit chip.

Abstract: A method of manufacturing a semiconductor device includes forming a stacked structure, forming an opening in the stacked structure, forming a preliminary channel layer in the opening, forming a channel layer by performing heat treatment on the preliminary channel layer, etching an inner surface of the channel layer, and performing ozone (O3) treatment on an etched inner surface of the channel layer.

Abstract: A semiconductor device includes a stack including alternately stacked conductive films and insulating films, wherein the stack includes an opening penetrating the conductive films and the insulating films, and wherein the stack includes a rounded corner that is exposed to the opening. The semiconductor device also includes a first channel film formed in the opening and including a first curved surface surrounding the rounded corner. The semiconductor device further includes a conductive pad formed in the opening, and a second channel film interposed between the first curved surface of the first channel film and the conductive pad.

Abstract: A memory device, and a method of manufacturing the same, includes interlayer insulation layers spaced apart from each other and stacked, gate lines formed between the interlayer insulation layers, and a plug vertically passing through the interlayer insulation layers and the gate lines. Each of the gate lines includes a barrier layer formed along an inner wall of the interlayer insulation layer and the plug, a first conductive layer surrounded by the barrier layer, and a second conductive layer surrounded by the first conductive layer. A material of the second conductive layer is different from a material of the first conductive layer, and a size of the second conductive layer is variable along a direction in which the gate lines extend.

Abstract: A method includes calculating whether a quantity of the PMs accumulated in a PF is at or above a risk level at which damage to the PF is caused when reproducing the PF, calculating a driving condition index by accumulating a weighting factor for a driving condition under which there is a likelihood of causing the damage to the PF, when the amount of accumulated PMs is at or above the risk level; calculating a temperature index in accordance with a temperature of the PF and a PM index in accordance with the quantity of the accumulated PMs when the quantity of the accumulated PMs is at or above the risk level; calculating a degradation condition index considering the driving condition index, the temperature of the PF, and the quantity of accumulated PMs; and changing a reproduction periodicity of the PF according to the degradation condition index.

Abstract: A semiconductor device includes a stacked structure including conductive layers and insulating layers alternately stacked with each other, and a channel layer passing through the stacked structure, wherein the channel layer is a single layer, the single layer including a first GIDL region, a cell region, and a second GIDL region, and the first GIDL region has a greater thickness than each of the cell region and the second GIDL region.