Patents by Inventor Joachim Mahler

Joachim Mahler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7880300
    Abstract: A semiconductor chip (1) has a metal coating structure (2) which has on an active upper side (3) of the semiconductor chip (1) at least one lower metal layer (8) with copper or copper alloy, on which a central metal layer (9) with nickel is arranged. The metal coating structure (2) is terminated by an upper metal layer (10) of palladium and/or a precious metal. The central metal layer (9) with nickel and/or nickel phosphide has a rough interface (11) with respect to the plastic package molding compound surrounding the metal coating structure (2).
    Type: Grant
    Filed: March 28, 2007
    Date of Patent: February 1, 2011
    Assignee: Infineon Technologies AG
    Inventors: Michael Bauer, Alfred Haimerl, Angela Kessler, Joachim Mahler, Wolfgang Schober
  • Patent number: 7874475
    Abstract: A method for the planar joining of components of semiconductor devices involves coating the components with diffusion materials on their upper sides and rear sides, respectively. Subsequently, the components to be joined one on the other are introduced into a reducing atmosphere. The components are aligned and a compressive pressure is exerted on the aligned components. While heating up the components to be joined in the reducing atmosphere to a diffusion joining temperature, isothermal solidification takes place, the diffusion joining temperature lying below the melting temperature of the forming diffusion joint of the joined material.
    Type: Grant
    Filed: December 7, 2006
    Date of Patent: January 25, 2011
    Assignee: Infineon Technologies AG
    Inventors: Khalil Hosseini, Joachim Mahler, Edmund Riedl, Ivan Galesic, Konrad Roesl
  • Patent number: 7868465
    Abstract: A semiconductor device is disclosed. One embodiment provides a device including a carrier, an electrically insulating layer applied onto the carrier, an adhesive layer applied to the electrically insulating layer. A first semiconductor chip applied to the adhesive layer.
    Type: Grant
    Filed: June 4, 2007
    Date of Patent: January 11, 2011
    Assignee: Infineon Technologies AG
    Inventors: Ralf Otremba, Joachim Mahler, Bernd Rakow, Reimund Engl, Rupert Fischer
  • Patent number: 7847375
    Abstract: This application relates to a semiconductor device, the semiconductor device comprising a metal carrier, an insulating foil partially covering the metal carrier, a first chip attached to the metal carrier over the insulating foil, and a second chip attached to the metal carrier over a region not covered by the insulating foil.
    Type: Grant
    Filed: August 5, 2008
    Date of Patent: December 7, 2010
    Assignee: Infineon Technologies AG
    Inventors: Joachim Mahler, Ralf Wombacher, Ralf Otremba
  • Patent number: 7843055
    Abstract: A semiconductor device and a method for producing it is disclosed. In one embodiment, an adhesion-promoting layer having nanoparticles is arranged between a circuit carrier and a plastic housing composition for the purpose of enhanced adhesion.
    Type: Grant
    Filed: April 10, 2007
    Date of Patent: November 30, 2010
    Assignee: Infineon Technologies AG
    Inventors: Michael Bauer, Markus Brunnbauer, Edward Fuergut, Joachim Mahler
  • Patent number: 7838978
    Abstract: A semiconductor device and method is disclosed. One embodiment provides a substrate and a first semiconductor chip applied over the substrate. A first electrically conductive layer is applied over the substrate and the first semiconductor chip. A first electrically insulating layer is applied over the first electrically conductive layer. A second electrically conductive layer is applied over the first electrically insulating layer.
    Type: Grant
    Filed: September 19, 2007
    Date of Patent: November 23, 2010
    Assignee: Infineon Technologies AG
    Inventors: Joachim Mahler, Henrik Ewe, Manfred Mengel
  • Patent number: 7834467
    Abstract: A layer improves adhesion between interfaces of different components in semiconductor devices. The interface of a first component includes surfaces of a circuit carrier and the interface of a second component includes contact surfaces of a plastic package molding compound. The adhesion-improving layer includes a mixture of polymeric chain molecules and carbon nanotubes.
    Type: Grant
    Filed: March 28, 2007
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventors: Michael Bauer, Alfred Haimerl, Khalil Hosseini, Angela Kessler, Joachim Mahler, Wolfgang Schober
  • Publication number: 20100276797
    Abstract: A semiconductor device includes a substrate having a chip island, a chip attached to the chip island, and encapsulation material deposited on the chip and part of the chip island. The chip island includes a first main face to which the chip is attached opposite a second main face, with the second main face of the chip island defining at least one cavity.
    Type: Application
    Filed: April 30, 2009
    Publication date: November 4, 2010
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Stefan Landau, Ralf Otremba, Uwe Kirchner, Andreas Schloegl, Christian Fachmann, Joachim Mahler
  • Patent number: 7811860
    Abstract: A method for producing a device and a device is disclosed. In one embodiment, a component is surrounded by a material. A fluoropolymer-containing compound is produced at a surface of the material. A molding is produced from a material and a fluoropolymer-containing compound is produced at a surface of the molding by a vapor deposition.
    Type: Grant
    Filed: November 20, 2007
    Date of Patent: October 12, 2010
    Assignee: Infineon Technologies AG
    Inventors: Joachim Mahler, Markus Brunnbauer, Manfred Mengel, Christof Matthias Schilz
  • Publication number: 20100230798
    Abstract: A semiconductor device includes a metal carrier and a spacer element attached to the metal carrier. The semiconductor device includes a first sintered metal layer on the spacer element and a semiconductor chip on the first sintered metal layer.
    Type: Application
    Filed: March 11, 2009
    Publication date: September 16, 2010
    Applicant: Infineon Technologies AG
    Inventors: Ivan Nikitin, Joachim Mahler, Thomas Behrens
  • Patent number: 7795727
    Abstract: The invention relates to a semiconductor module comprising stacked discrete components and a method for producing the same. In one embodiment, the semiconductor module has a semiconductor chip arranged on a wiring substrate. The discrete components are arranged and wired on an intermediate carrier, which is electrically connected to the wiring substrate and/or the semiconductor chip. The wiring substrate carries the semiconductor chip, the semiconductor chip carries the intermediate carrier and the intermediate carrier carries the discrete components.
    Type: Grant
    Filed: April 5, 2007
    Date of Patent: September 14, 2010
    Assignee: Infineon Technologies AG
    Inventors: Michael Bauer, Alfred Haimerl, Angela Kessler, Joachim Mahler
  • Publication number: 20100213613
    Abstract: An electrical connection arrangement between a semiconductor circuit arrangement and an external contact device, and to a method for producing the connection arrangement is disclosed. In one embodiment, a metallic layer is deposited onto at least one contact terminal and/or the contacts and the wire, the metallic layer protecting the contact terminal or the electrical connection against ambient influences and ensuring a high reliability.
    Type: Application
    Filed: April 29, 2010
    Publication date: August 26, 2010
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Thomas Laska, Matthias Stecher, Gregory Bellynck, Khalil Hosseini, Joachim Mahler
  • Patent number: 7781876
    Abstract: A semiconductor product including a substrate, a semiconductor chip fitted to the substrate, and a layer, which contains coated particles, located adjacent to the semiconductor chip, wherein the coated particles have a ferromagnetic, ferrimagnetic or paramagnetic core and a coating.
    Type: Grant
    Filed: April 27, 2007
    Date of Patent: August 24, 2010
    Assignee: Infineon Technologies AG
    Inventors: Horst Theuss, Manfred Mengel, Joachim Mahler
  • Patent number: 7781897
    Abstract: A semiconductor device has a circuit carrier with a number of internal contact areas is disclosed, which includes a first material with a first electrochemical potential, and a semiconductor chip with an active surface and a number of chip contact areas, which include a second material with a second electrochemical potential. Bonding wire connections are arranged between the chip contact areas and the internal contact areas of the leadframe and comprise a third material with a third electrochemical potential. The connecting points between the chip contact areas and the bonding wires and/or the connecting points between the internal contact areas and the bonding wires are coated with an anticorrosive layer.
    Type: Grant
    Filed: May 31, 2006
    Date of Patent: August 24, 2010
    Assignee: Infineon Technologies AG
    Inventors: Khalil Hosseini, Eduard Knauer, Joachim Mahler, Peter Mederer, Konrad Roesl
  • Publication number: 20100210071
    Abstract: A method of manufacturing a semiconductor device. The method includes providing a metal carrier, attaching chips to the carrier, and applying a metal layer over the chips and the metal carrier to electrically couple the chips to the metal carrier. The metal carrier is segmented, after applying the metal layer, to obtain metal contact elements.
    Type: Application
    Filed: February 13, 2009
    Publication date: August 19, 2010
    Applicant: Infineon Technologies AG
    Inventors: Joachim Mahler, Edward Fuergut, Manfred Mengel
  • Publication number: 20100207277
    Abstract: A semiconductor component including a stack of semiconductor chips, the semiconductor chips being fixed cohesively one on top of another, is disclosed. The contact areas of the semiconductor chips are led as far as the edges of the semiconductor chips and conductor portions extend at least from an upper edge to a lower edge of the edge sides of the semiconductor chips in order to electrically connect the contact area of the stacked semiconductor chips to one another.
    Type: Application
    Filed: February 9, 2005
    Publication date: August 19, 2010
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Michael Bauer, Thomas Engling, Alfred Haimerl, Angela Kessler, Joachim Mahler, Wolfgang Schober
  • Publication number: 20100207263
    Abstract: A semiconductor device includes a first chip coupled to an electrical insulator, and a sintered heat conducting layer disposed between the electrical insulator and the first chip.
    Type: Application
    Filed: February 13, 2009
    Publication date: August 19, 2010
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Ivan Nikitin, Joachim Mahler, Thomas Behrens
  • Patent number: 7777352
    Abstract: A semiconductor device includes semiconductor device components embedded in plastic package compound, with a buffer layer being arranged on surfaces of the semiconductor device components of the semiconductor device. The buffer layer includes a thermoplastic material.
    Type: Grant
    Filed: October 5, 2006
    Date of Patent: August 17, 2010
    Assignee: Infineon Technologies AG
    Inventors: Joachim Mahler, Seow Mun Tang
  • Publication number: 20100200978
    Abstract: A method of manufacturing a semiconductor device includes placing a chip on a carrier, and applying an electrically conducting layer to the chip and the carrier. The method additionally includes converting the electrically conducting layer into an electrically insulating layer.
    Type: Application
    Filed: February 12, 2009
    Publication date: August 12, 2010
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Manfred Mengel, Joachim Mahler, Stefan Landau
  • Patent number: 7767495
    Abstract: A semiconductor device and manufacturing method. One embodiment provides at least two semiconductor chips. A dielectric material is applied to the at least two semiconductor chips to attach the at least two semiconductor chips to each other. A portion of the dielectric material is selectively removed between the at least two semiconductor chips to form at least one recess in the dielectric material. Metal particles including paste is applied to the at least one recess in the dielectric material.
    Type: Grant
    Filed: August 25, 2008
    Date of Patent: August 3, 2010
    Assignee: Infineon Technologies AG
    Inventors: Edward Fuergut, Joachim Mahler, Carsten von Koblinski, Ivan Nikitin