Abstract: A chip package is provided. The chip package may include an electrically conductive carrier; at least one first chip including a first side and a second side opposite of the first side, with its second side being electrically contacted to the electrically conductive carrier; an insulating layer over at least a part of the electrically conductive carrier and over at least a part of the first side of the chip; at least one second chip arranged over the insulating layer and next to the first chip; encapsulating material over the first chip and the second chip; and electrical contacts which extend through the encapsulation material to at least one contact of the at least one first chip and to at least one contact of the at least one second chip.

Abstract: An assembled component and a method for assembling a component are disclosed. In one embodiment the assembled component includes a component carrier, an attachment layer disposed on the component carrier and a component disposed on the attachment layer, the component having a nano-structured first main surface facing the component carrier.

Abstract: A printed circuit board includes an electrically conductive layer and a dielectric layer including a polymer, wherein the polymer includes metallic particles.

Abstract: A primer composition is provided. The primer composition includes at least one bi- or multi-functional benzoxazine compound; and at least one compound including a functional group having affinity for a metallic surface, and a cross-linkable group. A method of forming a primer layer on a semiconductor device, and a method of encapsulating a semiconductor device are also provided.

Abstract: A chip package device includes an electrically conducting chip carrier, at least one semiconductor chip attached to the electrically conducting chip carrier, and an insulating laminate structure embedding the chip carrier, the at least one semiconductor chip and a passive electronic device. The passive electronic device includes a first structured electrically conducting layer, the first structured electrically conducting layer extending over a surface of the laminate structure.

Abstract: A carrier and a semiconductor chip are provided. A connection layer is applied to a first main face of the semiconductor chip. The connection layer includes a plurality of depressions. A filler is applied to the connection layer or to the carrier. The semiconductor chip is attached to the carrier so that the connection layer is disposed between the semiconductor chip and the carrier. The semiconductor chip is affixed to the carrier.

Abstract: Disclosed is a packaged device, comprising a carrier comprising a first carrier contact, a first electrical component having a first top surface and a first bottom surface, the first electrical component comprising a first component contact disposed on the first top surface, the first bottom surface being connected to the carrier, an embedded system comprising a second electrical component having a second top surface, an interconnect element, and a first connecting element, the embedded system having a system bottom surface, wherein the system bottom surface comprises a first system contact, wherein the second top surface comprises a first component contact, and wherein the first system contact is connected to the first component contact by the interconnect element and the first component contact of the second electrical component is connected to the first carrier contact by means of the first connecting element.

Abstract: An integrated circuit is provided, the integrated circuit including: a carrier including at least one electronic component and at least one contact area disposed on a first side of the carrier, wherein the at least one electronic component is electrically connected to the at least one contact area; an inorganic material layer wafer bonded to the first side of the carrier, wherein the carrier has a first coefficient of thermal expansion, and wherein the inorganic material layer has a second coefficient of thermal expansion, wherein the second coefficient of thermal expansion has a difference of less than 100% compared with the first coefficient of thermal expansion; and at least one contact via formed through the inorganic material layer, wherein the at least one contact via contacts the at least one contact area.

Abstract: A semiconductor device includes a semiconductor chip and a first material including molecules that are configured to absorb thermal energy by reversibly changing a spatial molecular structure of the molecules.

Abstract: A method of manufacturing a chip package is provided. The method may include electrically contacting at least one first chip, the first chip including a first side and a second side opposite the first side, with its second side to an electrically conductive carrier. An insulating layer is formed over at least a part of the electrically conductive carrier and over at least a part of the first side of the chip. At least one second chip is arranged over the insulating layer. An encapsulating material is formed over the first chip and the second chip. Electrical contacts are formed through the encapsulation material to at least one contact of the at least one first chip and to at least one contact of the at least one second chip.

Abstract: Various embodiments provide a chip package. The chip package may include a metallic chip carrier; at least one chip carried by the metallic chip carrier; encapsulation material encapsulating the at least one chip and the metallic chip carrier; and a plurality of redistribution layers disposed over the at least one chip opposite the metallic chip carrier, wherein at least one redistribution layer of the plurality of redistribution layers is electrically coupled with the at least one chip.

Abstract: A semiconductor device is disclosed. One embodiment includes a carrier, a semiconductor chip attached to the carrier, a first conducting line having a first thickness and being deposited over the semiconductor chip and the carrier and a second conducting line having a second thickness and being deposited over the semiconductor chip and the carrier. The first thickness is smaller than the second thickness.

Abstract: A multi-chip module and method is disclosed. One embodiment provides an electronic module having a first metal structure and a second metal structure. A first semiconductor chip is electrically connected with its back side to the first metal structure. A second semiconductor chip is arranged with its back side lying over the front side of the first semiconductor chip. The second metal structure includes multiple external contact elements attached over the front side of the second semiconductor chip. At least two of the multiple external contact elements are electrically connected to the front side of the second semiconductor chip.

Abstract: A method and a system for a reliable LED semiconductor device are provided. In one embodiment, the device comprises a carrier, a light emitting diode disposed on the carrier, an encapsulating material disposed over the light emitting diode and the carrier, at least one through connection formed in the encapsulating material, and a metallization layer disposed and structured over the at least one through connection.

Abstract: The method includes providing a semiconductor chip having a first main face and a second main face opposite the first main face. The semiconductor chip includes an electrical device adjacent to the first main face. Material of the semiconductor chip is removed at the second main face except for a pre-defined portion so that a non-planar surface remains at the second main face.

Abstract: One aspect is a method of manufacturing a semiconductor device and semiconductor device. One embodiment provides a plurality of modules. Each of the modules includes a carrier and at least one semiconductor chip attached to the carrier. A dielectric layer is applied to the modules to form a workpiece. The dielectric layer is structured to open at least one of the semiconductor chips. The workpiece is singulated to obtain a plurality of devices.

Abstract: A method of manufacturing a component is disclosed. An embodiment of the method comprises dicing a carrier in a plurality of components, the carrier being disposed on a support carrier, after dicing, placing a connection layer on the carrier and removing the components from the support carrier.

Abstract: The semiconductor chip package comprises a carrier, a semiconductor chip comprising a first main face and a second main face opposite to the first main face, chip contact elements disposed on one or more of the first or second main faces of the semiconductor chip, an encapsulation layer covering the first main face of the semiconductor chip, the encapsulation layer comprising a first main face facing the carrier and a second main face remote from the carrier, first contact elements disposed on the second main face of the encapsulation layer, each one of the first contact elements being connected to one of the chip contact elements, and second contact elements disposed on the first main face of the encapsulation layer, each one of the second contact elements being connected to one of the chip contact elements.

Abstract: Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

Abstract: A device includes a die and at least one of an encapsulant at least partly encapsulating the die and a carrier to which the die is attached. The at least one of the encapsulant and the carrier includes a thermoplastic polymer that includes metallic particles.