Abstract: An integrated semiconductor circuit, in particular a semiconductor memory configuration, which can be operated in various operating modes and which has an apparatus for switching between these operating modes is described. The semiconductor circuit has a switching apparatus with at least one fuse unit, which can be blown and programmed from the exterior.

Abstract: An active surface with a source area, a channel area and a drain area is provided in a semiconductor substrate. Each of the areas lie adjacent to a main surface of the semiconductor substrate. At least one trench is provided in the main surface of the semiconductor substrate. The trench is adjacent to the channel area and is situated in the gate electrode part. The gate electrode preferably has two opposite parts which are each adjacent to the channel area. The transistor is produced using standard process steps.

Abstract: A lowermost layer of control chips carries on it layers of memory chips. The memory chips are contacted via looped-through contacts that reach from one side of the other side of the memory chips and they are driven by the control chips that contain the test circuit for the memory chips.

Abstract: A method and a device for reading and for checking the time position of a data response read out from a memory module to be tested, in particular a DRAM memory operating in DDR operation. In a test receiver, the data response from the memory module to be tested is latched into a data latch with a data strobe response signal that has been delayed. A symmetrical clock signal is generated as a calibration signal. The calibration signal is used to calibrate the time position of the delayed data strobe response signal with respect to the data response. The delayed data strobe response signal is used for latching the data response. The delay time is programmed into a delay device during the calibration operation and also supplies a measure for testing precise time relationships between the data strobe response signal (DQS) and the data response.

Abstract: The invention relates to a telescopically extendible focusing hood which improves the viewing of the LCD screen of a digital camera in bright surrounding light. Said focusing hood can be fixed to the rear wall of the camera, surrounding the LCD screen. The focusing hood preferably has an anti-reflection-coated enlarging lens or glass disk which covers the entire cross-section of the focusing hood in the fixing plane. In its extended state, the focusing hood can be used with a single lens in the manner of a 35 mm camera finder. When the enlarging lens is pushed in, the focusing hood can be used with two lenses for assessing the image.

Abstract: The present invention provides a method for fabricating an integrated circuit, comprising the following steps: preparing a circuit substrate (1); providing a metallization region (10a) comprising a first metal in the circuit substrate (1); providing a first insulation layer (25) above the metallization region (10a); forming an opening (13) in the insulating layer (25) in order to uncover at least part of the surface of the metallization region (10a); depositing a functional layer (15′) above the resulting structure; depositing a second insulating layer (35) above the resulting structure, in such a manner that the opening (13) is filled; polishing-back of the second insulating layer (35) and of the functional layer (15′) in order to uncover the surface of the first insulating layer (25); forming a contact (11a′) in the second insulating layer (35) inside the opening (13) in order to make contact with the functional layer (15′); and providing an interconnect (40a) for electrical connecti

Abstract: The present invention provides a method for fabricating an integrated circuit, comprising the following steps: preparing a circuit substrate (1); providing a metallization region (10a) comprising a first metal in the circuit substrate (1); providing a first insulation layer (25) above the metallization region (10a); forming an opening (13) in the insulating layer (25) in order to uncover at least part of the surface of the metallization region (10a); depositing a functional layer (15′) above the resulting structure; depositing a second insulating layer (35) above the resulting structure, in such a manner that the opening (13) is filled; polishing-back of the second insulating layer (35) and of the functional layer (15′) in order to uncover the surface of the first insulating layer (25); forming a contact (11a′) in the second insulating layer (35) inside the opening (13) in order to make contact with the functional layer (15′); and providing an interconnect (40a) for electrical connecti

Abstract: An integrated semiconductor memory device that can be subjected to a memory cell test in order to determine functional and defective memory cells includes addressable normal memory cells, a first redundancy unit having first addressable redundant memory cells and optically programmable switches for replacing an address of a defective normal memory cell by the address of a first redundant memory cell, and a second redundancy unit having second addressable redundant memory cells and electrically programmable switches for replacing an address of a defective normal memory cell by the address of a second redundant memory cell. The second redundancy unit can be connected by the activation of an irreversibly programmable switch, which enables a simplified functional test at the wafer level.

Abstract: A connection element in an integrated circuit having a layer structure disposed between two conductive structures. The layer structure is formed by an insulating layer, which can be destroyed by application of a predetermined voltage, and a silicon layer. The insulating layer adjoins a first conductive structure made of tungsten.

Abstract: A test configuration for testing a plurality of integrated circuits, in particular fast semiconductor memory modules located on a wafer, in parallel. The test configuration includes a carrier board for bringing up electrical signal lines belonging to a test system, contact-making needles for producing electrical connections with contact areas on the circuits to be tested, and a plurality of active modules that are arranged on the carrier board. The active modules are each assigned to one of the circuits to be tested in parallel, and are each case inserted into the signal path between the test system and the associated circuit to be tested. In a preferred embodiment, the active modules are arranged at least partly overlapping, based on a direction at right angles to the plane of the carrier board.

Abstract: The invention relates to a fusible link configuration in or on integrated circuits, in particular highly integrated memory chips, in which in each case one bank of fusible links (F1, F2, . . . ), together with an evaluation logic unit is configured beside and in association with a memory field segment. The evaluation logic unit is electrically connected to the fusible links (F1, F2, . . . ) and determines whether one or more of the fusible links (F1, F2, . . . ) is severed. One or more banks of the fusible links (F1, F2, . . . ) are divided up into smaller units while restricting the width(s) of the bank or banks. The units are grouped such that at least some of the fusible links (F1, F2, . . . ) are located beside one another transversely with respect to the width direction of the bank.

Abstract: A system and a method for testing fast synchronous digital circuit with an additional built outside self test semiconductor chip disposed between a test device and circuit under test. The chip has a switching/detection unit that tests the chip based on external criteria between a first normal operating mode in which the chip tests the circuit to be tested, and a second operating mode in which programmable registers of the register unit of a receiver of the chip are programmed by the external test device. The registers store constants and variables for generating the test signals and for evaluating them. The chip generates test signals and transceiver for sending the test signals and receiving response signals generated thereby.

Abstract: An active surface with a source area, a channel area and a drain area is provided in a semiconductor substrate. Each of the areas lie adjacent to a main surface of the semiconductor substrate. At least one trench is provided in the main surface of the semiconductor substrate. The trench is adjacent to the channel area and is situated in the gate electrode part. The gate electrode preferably has two opposite parts which are each adjacent to the channel area. The transistor is produced using standard process steps.

Abstract: The system enables testing fast synchronous semiconductor circuits, particularly semiconductor memory chips. Various test signals such as test data, data strobe signals, control/address signals are combined to form signal groups and controllable transmit driver and receiver elements allocated to them are in each case jointly activated or, respectively, driven by timing reference signals generated by programmable DLL delay circuits. A clock signal generated in a clock generator in the BOST semiconductor circuit is picked up at a tap in the immediate vicinity of the semiconductor circuit chip to be tested and fed back to a DLL circuit in the BOST chip where it is used for eliminating delay effects in the lines leading to the DUT and back to the BOST.

Abstract: The novel address counter can be used in combination with an existing test unit—serving for testing digital circuits—for addressing synchronous high-frequency digital circuits, in particular fast memory devices. Address offset values are provided in programmable offset registers, with a multiplexer circuit and a selection and combination circuit, on the basis of input signals which are fed in at low frequency and in parallel by the test unit. Simple address changes and address jumps can be realized at a high clock frequency in a very flexible manner.

Abstract: The method and the device generate digital signal patterns. Signal patterns or signal pattern groups are stored in a very small buffer register. The position of a following signal pattern or following signal pattern group is also stored in the form of a branch address, together with each signal pattern or each signal pattern group. A simple control logic circuit receives a control signal and determines whether the content of the currently addressed group is output continuously or the following group given by the branch address stored in the register is output after the currently selected group has been completely output. The novel method and device can advantageously be used for testing semiconductor memories and implemented in a cost-effective semiconductor circuit which is remote from a conventional test system.

Abstract: A circuit configuration for generating control signals for testing high-frequency synchronous digital circuits, especially memory chips, is described. A p-stage shift register which is clocked at a clock frequency corresponding to the high clock frequency of the digital circuit to be tested has connected to its parallel loading inputs p logical gates which logically combine a static control word with a dynamic n-position test word. The combined logical value is loaded into the shift register at a low-frequency loading clock rate so that a control signal, the value of which depends on the information loaded into the shift register in each clock cycle of the clock frequency of the latter is generated at the serial output of the shift register.

Abstract: The invention relates to a system for testing fast integrated digital circuits, in particular semiconductor modules, such as for example SDRAMs. In order to achieve the necessary chronological precision in the testing even of DDR-SDRAMs, with at the same time the high degree of parallelism of the test system required for mass production, an additional semiconductor circuit module (BOST module) is inserted into the signal path between a standard testing device and the SDRAM to be tested. This additional module is set up so as to multiply the relatively slow clock frequency of the conventional testing device, and to determine the signal sequence for control signals, addresses, and data background with which the SDRAM module is tested, dependent on signals of the testing device and also on register contents, programmed before the test, in the BOST module.

Abstract: A connection element in an integrated circuit having a layer structure disposed between two conductive structures. The layer structure is formed by an insulating layer, which can be destroyed by application of a predetermined voltage, and a silicon layer. The insulating layer adjoins a first conductive structure made of tungsten.

Abstract: This invention relates to devices and methods for carrying out multi-step and multiplex immunoaffinity binding reactions in microscopic formats. In particular, these devices and methods allow the user to rapidly carry out multiple immunoassays in the same sample volume, and to rapidly resolve the results of those immunoassays in an electronically assisted format. The assays may be further multiplexed in that several samples may be analyzed and visualized on the same microelectronic array.