Abstract: A particulate matter detector includes a light emitter configured to emit light, a first, a second and a third waveguide, a waveguide splitter, a detector, and a controller. The third waveguide is free of cladding. The first waveguide is coupled to the light emitter and guides emitted light toward the waveguide splitter. The first waveguide includes an interrogation region formed by a cladding-free surface of the first waveguide. During a measurement phase, a first intensity of the light in the first waveguide is set for determining a change in the intensity of the light detected by the detector. An indication of an opacity of the surface of the first waveguide with accumulated particulate matter is output. During a cleaning phase, a second intensity of the light in the first waveguide is set for directing the accumulated particulate matter from the interrogation region to the third waveguide via optical forces.

Abstract: A sensor module for Raman spectroscopy includes a sensor package enclosing a light emitter arrangement, a dispersive element and a light detector arrangement arranged on or integrated into a carrier. The light emitter arrangement is operable to emit light with multiple excitation wavelengths out of the sensor module. The dispersive element is operable to receive light incident on the sensor module and operable to disperse the incident light into spectral components. The light detector arrangement is operable to generate spectral sensor signals indicative of the spectral components.

Abstract: An open through-substrate via, TSV, comprises an insulation layer disposed adjacent to at least a portion of side walls of a trench and to a surface of a substrate body. The TSV further comprises a metallization layer disposed adjacent to at least a portion of the insulation layer and to at least a portion of a bottom wall of said trench, a redistribution layer disposed adjacent to at least a portion of the metallization layer and a portion of the insulation layer disposed adjacent to the surface, and a capping layer disposed adjacent to at least a portion of the metallization layer and to at least a portion of the redistribution layer. The insulation layer and/or the capping layer comprise sublayers that are distinct from each other in terms of material properties. A first of the sublayers is disposed adjacent to at least a portion of the side walls and to at least a portion of the surface and a second of the sublayers is disposed adjacent to at least a portion of the surface.

Abstract: A method for manufacturing a sensor includes providing a lower cladding layer, depositing a waveguide layer on the lower cladding layer, forming a sensing waveguide and a reference waveguide by photolithography and etching the waveguide layer in places, and forming a photoresist structure-on a part of the sensing waveguide by photolithography. The method also includes depositing an upper cladding layer on the photoresist structure, the sensing waveguide, the reference waveguide, and the lower cladding layer. The method further includes removing the photoresist structure with the part of the upper cladding layer deposited on the photoresist structure so that an opening within the upper cladding layer is formed above the sensing waveguide. The method additionally includes depositing a functionalization material within the opening. From the waveguide layer an auxiliary structure is formed by photolithography and etching the waveguide layer, and the opening is above the auxiliary structure.

Abstract: A particulate matter detector includes a light emitter configured to emit light, a first, a second and a third waveguide, a waveguide splitter, a detector, and a controller. The third waveguide is free of cladding. The first waveguide is coupled to the light emitter and guides emitted light toward the waveguide splitter. The first waveguide includes an interrogation region formed by a cladding-free surface of the first waveguide. During a measurement phase, a first intensity of the light in the first waveguide is set for determining a change in the intensity of the light detected by the detector. An indication of an opacity of the surface of the first waveguide with accumulated particulate matter is output. During a cleaning phase, a second intensity of the light in the first waveguide is set for directing the accumulated particulate matter from the interrogation region to the third waveguide via optical forces.

Abstract: An integrated optical transducer for detecting dynamic pressure changes comprises a micro-electro-mechanical system, MEMS, die having a MEMS diaphragm with a first side exposed to the dynamic pressure changes and a second side, and an application-specific integrated circuit, ASIC, die having an optical interferometer assembly. The interferometer assembly comprises a beam splitting element for receiving a source beam from a light source and for splitting the source beam into a probe beam in a first beam path and a reference beam in a second beam path, a beam combining element for combining the probe beam with the reference beam to a superposition beam, and a detector configured to generate an electronic interference signal depending on the superposition beam. The MEMS die is arranged with respect to the ASIC die such that a gap is formed between the second side of the diaphragm and the ASIC die, with the gap defining a cavity and having a gap height.

Abstract: A substrate is provided with a dielectric, a metal layer embedded in the dielectric, and a metallic layer arranged on the metal layer between the substrate and the metal layer. A via hole is formed in the substrate and in a region of the dielectric that is between the substrate and the metal layer. An insulation layer is applied in the via hole and removed from above a contact area of the metal layer, and the metallic layer is completely removed from the contact area. A metallization is applied in the via hole on the contact area.

Abstract: The particle sensor device comprises a substrate, a photodetector, a dielectric on or above the substrate, a source of electromagnetic radiation, and a through-substrate via in the substrate. The through-substrate via is exposed to the environment, in particular to ambient air. A waveguide is arranged in or above the dielectric so that the electromagnetic radiation emitted by the source of electromagnetic radiation is coupled into a portion of the waveguide. A further portion of the waveguide is opposite the photodetector, so that said portions of the waveguide are on different sides of the through-substrate via, and the waveguide traverses the through-substrate via.

Abstract: The chemical sensing device comprises a substrate of semiconductor material, integrated circuit components and a photodetector formed in the substrate, a dielectric on the substrate, a wiring in the dielectric, and a source of electromagnetic radiation, a waveguide and a fluorescent sensor layer arranged in or above the dielectric. A portion of the waveguide is arranged to allow the electromagnetic radiation emitted by the source of electromagnetic radiation to be coupled into the waveguide. A further portion of the waveguide is arranged between the photodetector and the fluorescent sensor layer.

Abstract: An open through-substrate via, TSV, comprises an insulation layer disposed adjacent to at least a portion of side walls of a trench and to a surface of a substrate body. The TSV further comprises a metallization layer disposed adjacent to at least a portion of the insulation layer and to at least a portion of a bottom wall of said trench, a redistribution layer disposed adjacent to at least a portion of the metallization layer and a portion of the insulation layer disposed adjacent to the surface, and a capping layer disposed adjacent to at least a portion of the metallization layer and to at least a portion of the redistribution layer. The insulation layer and/or the capping layer comprise sublayers that are distinct from each other in terms of material properties. A first of the sublayers is disposed adjacent to at least a portion of the side walls and to at least a portion of the surface and a second of the sublayers is disposed adjacent to at least a portion of the surface.

Abstract: A bonded structure comprises a substrate component having a plurality of first pads arranged on or within a surface of the substrate component, and an integrated circuit component having a plurality of second pads arranged on or within a surface of the integrated circuit component. The bonded structure further comprises a plurality of connection elements physically connecting the first pads to the second pads. The surface of the integrated circuit component is tilted obliquely to the surface of the substrate component at a tilt angle that results from nominal variations of surface sizes of the first and second pads.

Abstract: An apparatus includes an integrated waveguide structure, and a first light source operable to produce a probe beam having a first wavelength, wherein the probe beam is coupled into a first end of the waveguide structure. A second light source is operable to produce an excitation beam with having a second wavelength to excite gas molecules in close proximity to a path of the probe beam. A light detector is coupled to a second end of the integrated waveguide structure and is operable to detect the probe beam after it passes through the waveguide structure. The apparatus is operable such that excitation of the gas molecules results in a temperature increase of the gas molecules that induces a change in the probe beam that is measurable by the light detector.

Abstract: A semiconductor device includes a semiconductor body, an electrically conductive via which extends through at least a part of the semiconductor body, and where the via has a top side and a bottom side that faces away from the top side, an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to a lateral direction, where the lateral direction is perpendicular to a vertical direction given by the main axis of extension of the via, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the lateral direction. The etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction, the lateral extent in the lateral direction of the etch-stop layer amounts to at least 2.

Abstract: A method for manufacturing a semiconductor device is provided. The method comprises the steps of providing a semiconductor body, forming a trench in the semiconductor body in a vertical direction which is perpendicular to the main plane of extension of the semiconductor body, and coating inner walls of the trench with an isolation layer. The method further comprises the steps of coating the isolation layer at the inner walls with a metallization layer, coating a top side of the semiconductor body, at which the trench is formed, at least partially with an electrically conductive contact layer, where the contact layer is electrically connected with the metallization layer, coating the top side of the semiconductor body at least partially and the trench with a capping layer, and forming a contact pad at the top side of the semiconductor body by removing the contact layer and the capping layer at least partially. Furthermore, a semiconductor device is provided.

Abstract: An integrated optical transducer for detecting dynamic pressure changes comprises a micro-electro-mechanical system, MEMS, die having a MEMS diaphragm with a first side exposed to the dynamic pressure changes and a second side, and an application-specific integrated circuit, ASIC, die having an optical interferometer assembly. The interferometer assembly comprises a beam splitting element for receiving a source beam from a light source and for splitting the source beam into a probe beam in a first beam path and a reference beam in a second beam path, a beam combining element for combining the probe beam with the reference beam to a superposition beam, and a detector configured to generate an electronic interference signal depending on the superposition beam. The MEMS die is arranged with respect to the ASIC die such that a gap is formed between the second side of the diaphragm and the ASIC die, with the gap defining a cavity and having a gap height.

Abstract: A method for manufacturing a semiconductor device is provided. The method comprises the steps of providing a semiconductor body, forming a trench in the semiconductor body in a vertical direction which is perpendicular to the main plane of extension of the semiconductor body, and coating inner walls of the trench with an isolation layer. The method further comprises the steps of coating the isolation layer at the inner walls with a metallization layer, coating a top side of the semiconductor body, at which the trench is formed, at least partially with an electrically conductive contact layer, where the contact layer is electrically connected with the metallization layer, coating the top side of the semiconductor body at least partially and the trench with a capping layer, and forming a contact pad at the top side of the semiconductor body by removing the contact layer and the capping layer at least partially. Furthermore, a semiconductor device is provided.

Abstract: A semiconductor device comprises a semiconductor body and an electrically conductive via which extends through at least a part of the semiconductor body, where the via has a lateral size which is given in a first lateral direction that is perpendicular to a vertical direction given by the main axis of extension of the via and where the via has a top side and a bottom side that faces away from the top side. The semiconductor device further comprises an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to the first lateral direction, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the first lateral direction. The lateral extent in the first lateral direction of the etch-stop layer is larger than the lateral size of the via and the lateral extent in the first lateral direction of the contact layer is smaller than the lateral size of the via.

Abstract: A semiconductor device includes a semiconductor body, an electrically conductive via which extends through at least a part of the semiconductor body, and where the via has a top side and a bottom side that faces away from the top side, an electrically conductive etch-stop layer arranged at the bottom side of the via in a plane which is parallel to a lateral direction, where the lateral direction is perpendicular to a vertical direction given by the main axis of extension of the via, and at least one electrically conductive contact layer at the bottom side of the via in a plane which is parallel to the lateral direction. The etch-stop layer is arranged between the electrically conductive via and the contact layer in the vertical direction, the lateral extent in the lateral direction of the etch-stop layer amounts to at least 2.

Abstract: The particle sensor device comprises a substrate, a photodetector, a dielectric on or above the substrate, a source of electromagnetic radiation, and a through-substrate via in the substrate. The through-substrate via is exposed to the environment, in particular to ambient air. A waveguide is arranged in or above the dielectric so that the electromagnetic radiation emitted by the source of electromagnetic radiation is coupled into a portion of the waveguide. A further portion of the waveguide is opposite the photodetector, so that said portions of the waveguide are on different sides of the through-substrate via, and the waveguide traverses the through-substrate via.

Abstract: A substrate is provided with a dielectric, a metal layer embedded in the dielectric, and a metallic layer arranged on the metal layer between the substrate and the metal layer. A via hole is formed in the substrate and in a region of the dielectric that is between the substrate and the metal layer. An insulation layer is applied in the via hole and removed from above a contact area of the metal layer, and the metallic layer is completely removed from the contact area. A metallization is applied in the via hole on the contact area.