Patents by Inventor John David Baniecki

John David Baniecki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11387049
    Abstract: An oxygen generating electrode includes a conductive layer; a photocatalyst layer; and a light absorption. The light-absorbing layer arranged between the conductive layer and the photocatalyst layer. The light-absorbing layer is formed of one or a plurality of perovskite-type films, and each of the films contains tin (Sn), oxygen (O), sulfur (S), and one or more elements selected from Group 1 or Group 2 of the periodic table of elements. Each of the films formed by doping S for substituting an O site is set so that a band gap takes a predetermined value in a range between 0 eV to 4 eV.
    Type: Grant
    Filed: October 2, 2019
    Date of Patent: July 12, 2022
    Assignee: FUJITSU LIMITED
    Inventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
  • Patent number: 11098411
    Abstract: An oxygen generating electrode includes: an oxide film having a perovskite structure; an organic film over the oxide film; and a conductive film electrically coupled to the organic film, wherein the organic film contains an amino acid having a side chain of negative polarity.
    Type: Grant
    Filed: June 19, 2019
    Date of Patent: August 24, 2021
    Assignee: FUJITSU LIMITED
    Inventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
  • Patent number: 11087930
    Abstract: An oxygen generation electrode includes, a conductive layer including a salt of stannic acid, the salt of stannic acid having a perovskite structure, a light absorption layer disposed on the conductive layer, and a catalyst layer disposed on the light absorption layer, the catalyst layer including an oxide having a perovskite structure and being responsible for an oxygen evolution reaction, the conductive layer being doped to degeneracy with impurities, the light absorption layer forming a Type-II heterojunction with the conductive layer, the catalyst layer being doped to degeneracy with impurities, the upper end of the valence band of the catalyst layer being higher than the upper end of the valence band of the light absorption layer.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: August 10, 2021
    Assignee: FUJITSU LIMITED
    Inventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
  • Patent number: 10873017
    Abstract: A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: December 22, 2020
    Assignee: FUJITSU LIMITED
    Inventors: John David Baniecki, Masatoshi Ishii, Kazuaki Kurihara
  • Patent number: 10858745
    Abstract: A photochemical electrode includes: an optical absorption layer; a catalyst layer for oxygen evolution reaction over the optical absorption layer; and a conducting layer over the catalyst layer. A valance band maximum of the catalyst layer is higher than a valance band maximum of the optical absorption layer. A work function of the conducting layer is larger than a work function of the catalyst layer.
    Type: Grant
    Filed: August 24, 2017
    Date of Patent: December 8, 2020
    Assignee: FUJITSU LIMITED
    Inventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
  • Publication number: 20200238267
    Abstract: An oxygen evolution device comprises an oxygen evolution electrode and an counter electrode. The oxygen evolution electrode includes: a photocatalyst layer that is formed of a perovskite-type oxide containing at least cobalt (Co), lanthanum (La), and oxygen (O) and that is located at an uppermost layer; a support body that includes at least a layer inside which a depletion layer is formed, and that supports the photocatalyst layer; and a perovskite-type tin compound buffer layer that is degenerately doped n-type and that is disposed between the photocatalyst layer and the support body.
    Type: Application
    Filed: December 19, 2019
    Publication date: July 30, 2020
    Applicant: FUJITSU LIMITED
    Inventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
  • Patent number: 10672965
    Abstract: A thermoelectric conversion element includes a film composed of a conductive oxide, a first electrode disposed on one end of the film composed of the conductive oxide, and a second electrode disposed on another end of the film composed of the conductive oxide, wherein the conductive oxide has a tetragonal crystal structure expressed by ABO3-x, where 0.1<x<1, wherein the conductive oxide has a band structure in which a Fermi level intersects seven bands between a ? point and an R point, and wherein the first electrode and the second electrode are disposed on the film composed of the conductive oxide so that electrical charge moves in a direction of a smallest vector among three primitive translation vectors of the crystal structure.
    Type: Grant
    Filed: May 18, 2019
    Date of Patent: June 2, 2020
    Assignee: FUJITSU LIMITED
    Inventors: John David Baniecki, Masatoshi Ishii, Kazuaki Kurihara
  • Publication number: 20200144473
    Abstract: A thermoelectric conversion element includes: a first layer of perovskite-type oxide has conductivity or semiconductivity; a second layer of perovskite-type oxide that is disposed in contact with the first layer in a stacking direction; and an electrode disposed on a surface of the second layer, wherein the second layer has a band gap larger than a band gap of the first layer and has transition lines penetrating through the second layer in a film thickness direction or a transition line network.
    Type: Application
    Filed: September 12, 2019
    Publication date: May 7, 2020
    Applicant: FUJITSU LIMITED
    Inventors: John David BANIECKI, Hiroyuki ASO, Yasutoshi KOTAKA, Yoshihiko IMANAKA
  • Publication number: 20200111619
    Abstract: An oxygen generating electrode includes a conductive layer; a photocatalyst layer; and a light absorption. The light-absorbing layer arranged between the conductive layer and the photocatalyst layer. The light-absorbing layer is formed of one or a plurality of perovskite-type films, and each of the films contains tin (Sn), oxygen (O), sulfur (S), and one or more elements selected from Group 1 or Group 2 of the periodic table of elements. Each of the films formed by doping S for substituting an O site is set so that a band gap takes a predetermined value in a range between 0 eV to 4 eV.
    Type: Application
    Filed: October 2, 2019
    Publication date: April 9, 2020
    Applicant: FUJITSU LIMITED
    Inventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
  • Patent number: 10559737
    Abstract: A thermoelectric conversion element includes: a first film including a perovskite structure; a second film and a third film, including a perovskite structure, disposed in such a manner that the first film is interposed between the second film and the third film; a fourth film, including a perovskite structure, disposed so as to interpose the second film with the first film; and a fifth film, including a perovskite structure, disposed so as to interpose the third film with the first film, wherein an offset in conduction band between the first film and the second film and an offset in conduction band between the first film and the third film is less than 0.25 eV, and an offset in conduction band between the second film and the fourth film and an offset in conduction band between the third film and the fifth film is more than 1 eV.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: February 11, 2020
    Assignee: FUJITSU LIMITED
    Inventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
  • Patent number: 10533257
    Abstract: A photochemical electrode includes a conductive oxide. Fermi energy of the conductive oxide is higher than a first energy minimum of a first band having a lowest energy and is lower than a second energy minimum of a second band having a higher energy than the first band among bands whose curvatures are positive in reciprocal space. The first energy minimum and the second energy minimum are at the same point of wave vector. A difference between the second energy minimum and the first energy minimum is not less than 1 eV nor more than 3 eV, and is smaller than a difference between the first energy minimum and an energy maximum of a band having a highest energy among bands whose curvatures are negative.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: January 14, 2020
    Assignee: Fujitsu Limited
    Inventors: John David Baniecki, Toshihisa Anazawa, Yoshihiko Imanaka
  • Publication number: 20200010965
    Abstract: An oxygen generation electrode includes: a conductive substrate; and an oxide film formed on a first surface of the conductive substrate and containing Ba, Sn, and La or Sb, wherein the oxide film has a first absorption edge in a visible light region and a second absorption edge in an infrared light region.
    Type: Application
    Filed: September 19, 2019
    Publication date: January 9, 2020
    Applicant: FUJITSU LIMITED
    Inventors: John David Baniecki, Takashi Yamazaki, Hiroyuki Aso, Yoshihiko Imanaka
  • Publication number: 20200013938
    Abstract: A thermoelectric conversion element includes: a first layer of perovskite-type oxide has conductivity or semiconductivity; a second layer of perovskite-type oxide that is disposed in contact with the first layer in a stacking direction; and an electrode disposed on a surface of the second layer, wherein the second layer has a band gap larger than a band gap of the first layer and has transition lines penetrating through the second layer in a film thickness direction or a transition line network.
    Type: Application
    Filed: September 13, 2019
    Publication date: January 9, 2020
    Applicant: FUJITSU LIMITED
    Inventors: John David BANIECKI, Hiroyuki ASO, Yasutoshi KOTAKA, Yoshihiko IMANAKA
  • Publication number: 20190363235
    Abstract: A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.
    Type: Application
    Filed: August 12, 2019
    Publication date: November 28, 2019
    Applicant: FUJITSU LIMITED
    Inventors: John David Baniecki, Masatoshi Ishii, Kazuaki Kurihara
  • Publication number: 20190301030
    Abstract: An oxygen generating electrode includes: an oxide film having a perovskite structure; an organic film over the oxide film; and a conductive film electrically coupled to the organic film, wherein the organic film contains an amino acid having a side chain of negative polarity.
    Type: Application
    Filed: June 19, 2019
    Publication date: October 3, 2019
    Applicant: FUJITSU LIMITED
    Inventors: John David Baniecki, Hiroyuki Aso, Yoshihiko Imanaka
  • Patent number: 10424708
    Abstract: A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: September 24, 2019
    Assignee: FUJITSU LIMITED
    Inventors: John David Baniecki, Masatoshi Ishii, Kazuaki Kurihara
  • Publication number: 20190280180
    Abstract: A thermoelectric conversion element includes a film composed of a conductive oxide, a first electrode disposed on one end of the film composed of the conductive oxide, and a second electrode disposed on another end of the film composed of the conductive oxide, wherein the conductive oxide has a tetragonal crystal structure expressed by ABO3-x, where 0.1<x<1, wherein the conductive oxide has a band structure in which a Fermi level intersects seven bands between a ? point and an R point, and wherein the first electrode and the second electrode are disposed on the film composed of the conductive oxide so that electrical charge moves in a direction of a smallest vector among three primitive translation vectors of the crystal structure.
    Type: Application
    Filed: May 18, 2019
    Publication date: September 12, 2019
    Inventors: John David BANIECKI, Masatoshi ISHII, Kazuaki KURIHARA
  • Patent number: 10347810
    Abstract: A thermoelectric conversion element includes a film composed of a conductive oxide, a first electrode disposed on one end of the film composed of the conductive oxide, and a second electrode disposed on another end of the film composed of the conductive oxide, wherein the conductive oxide has a tetragonal crystal structure expressed by ABO3-x, where 0.1<x<1, wherein the conductive oxide has a band structure in which a Fermi level intersects seven bands between a ? point and an R point, and wherein the first electrode and the second electrode are disposed on the film composed of the conductive oxide so that electrical charge moves in a direction of a smallest vector among three primitive translation vectors of the crystal structure.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: July 9, 2019
    Assignee: FUJITSU LIMITED
    Inventors: John David Baniecki, Masatoshi Ishii, Kazuaki Kurihara
  • Publication number: 20190006120
    Abstract: An oxygen generation electrode includes, a conductive layer including a salt of stannic acid, the salt of stannic acid having a perovskite structure, a light absorption layer disposed on the conductive layer, and a catalyst layer disposed on the light absorption layer, the catalyst layer including an oxide having a perovskite structure and being responsible for an oxygen evolution reaction, the conductive layer being doped to degeneracy with impurities, the light absorption layer forming a Type-II heterojunction with the conductive layer, the catalyst layer being doped to degeneracy with impurities, the upper end of the valence band of the catalyst layer being higher than the upper end of the valence band of the light absorption layer.
    Type: Application
    Filed: June 25, 2018
    Publication date: January 3, 2019
    Applicant: FUJITSU LIMITED
    Inventors: John David Baniecki, Hiroyuki ASO, Yoshihiko Imanaka
  • Patent number: 10103308
    Abstract: A thermoelectric conversion element includes a p-type film having a perovskite structure, the p-type film including Co; an n-type film having a perovskite structure, the n-type film including Ti; first and second i-type films configured to be arranged to face each other across the n-type film, the first and second i-type films having a perovskite structure and including Ti; and a barrier film configured to be interposed between a multilayer body and the p-type film, the barrier film having a perovskite structure and including Zr, the multilayer body including the n-type film and the first and second i-type films.
    Type: Grant
    Filed: October 11, 2016
    Date of Patent: October 16, 2018
    Assignee: FUJITSU LIMITED
    Inventors: John David Baniecki, Takashi Yamazaki, Hiroyuki Aso, Yoshihiko Imanaka