Abstract: A photochemical electrode includes: an optical absorption layer; a catalyst layer for oxygen evolution reaction over the optical absorption layer; and a conducting layer over the catalyst layer. A valance band maximum of the catalyst layer is higher than a valance band maximum of the optical absorption layer. A work function of the conducting layer is larger than a work function of the catalyst layer.

Abstract: A photochemical electrode includes a conductive oxide. Fermi energy of the conductive oxide is higher than a first energy minimum of a first band having a lowest energy and is lower than a second energy minimum of a second band having a higher energy than the first band among bands whose curvatures are positive in reciprocal space. The first energy minimum and the second energy minimum are at the same point of wave vector. A difference between the second energy minimum and the first energy minimum is not less than 1 eV nor more than 3 eV, and is smaller than a difference between the first energy minimum and an energy maximum of a band having a highest energy among bands whose curvatures are negative.

Abstract: A multilayer thin-film structure has a layered structure with an alternative stacking series of a first layer of a first oxide semiconductor and a second layer of a second oxide semiconductor different from the first oxide semiconductor, wherein the layered structure has one or more band gaps including a range of 1.3 eV to 1.5 eV.

Abstract: A thermoelectric conversion element includes: a first film including a perovskite structure; a second film and a third film, including a perovskite structure, disposed in such a manner that the first film is interposed between the second film and the third film; a fourth film, including a perovskite structure, disposed so as to interpose the second film with the first film; and a fifth film, including a perovskite structure, disposed so as to interpose the third film with the first film, wherein an offset in conduction band between the first film and the second film and an offset in conduction band between the first film and the third film is less than 0.25 eV, and an offset in conduction band between the second film and the fourth film and an offset in conduction band between the third film and the fifth film is more than 1 eV.

Abstract: A thermoelectric conversion element includes a p-type film having a perovskite structure, the p-type film including Co; an n-type film having a perovskite structure, the n-type film including Ti; first and second i-type films configured to be arranged to face each other across the n-type film, the first and second i-type films having a perovskite structure and including Ti; and a barrier film configured to be interposed between a multilayer body and the p-type film, the barrier film having a perovskite structure and including Zr, the multilayer body including the n-type film and the first and second i-type films.

Abstract: A thermoelectric generator includes: a substrate; a thermoelectric conversion film on the substrate; a thermally insulating film that covers the thermoelectric conversion film; a first heat transfer material that transfers a first heat above the thermally insulating film to a first portion of the thermoelectric conversion film; and a second heat transfer material that transfers a second heat below the substrate to a second portion of the thermoelectric conversion film, the second portion being separated from the first portion.

Abstract: A thermoelectric conversion device includes a perovskite film over a substrate and formed with first and second electrodes on the perovskite film, wherein the perovskite film includes a domain having a crystal orientation different from a crystal orientation of a crystal that constitutes the perovskite film.

Abstract: A thermoelectric conversion element includes: a first layer of perovskite-type oxide has conductivity or semiconductivity; a second layer of perovskite-type oxide that is disposed in contact with the first layer in a stacking direction; and an electrode disposed on a surface of the second layer, wherein the second layer has a band gap larger than a band gap of the first layer and has transition lines penetrating through the second layer in a film thickness direction or a transition line network.

Abstract: A thermoelectric conversion device includes a stack in which a first perovskite dielectric film, which includes Sr and Ti and has a first bandgap, and a second perovskite dielectric film, which includes Sr and Ti and has a second bandgap smaller than the first bandgap, are stacked alternately, each of the first and second perovskite dielectric films being doped to have an electric conductivity, the first and the second perovskite dielectric films having respective compositions such that there appears a bandoffset of 0.54 eV in maximum between a conduction band of the first perovskite dielectric film and a conduction band of the second perovskite dielectric film.

Abstract: A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.

Abstract: A thermoelectric conversion element includes a film composed of a conductive oxide, a first electrode disposed on one end of the film composed of the conductive oxide, and a second electrode disposed on another end of the film composed of the conductive oxide, wherein the conductive oxide has a tetragonal crystal structure expressed by ABO3-x, where 0.1<x<1, wherein the conductive oxide has a band structure in which a Fermi level intersects seven bands between a ? point and an R point, and wherein the first electrode and the second electrode are disposed on the film composed of the conductive oxide so that electrical charge moves in a direction of a smallest vector among three primitive translation vectors of the crystal structure.

Abstract: A thermoelectric conversion device includes a stack in which a first perovskite dielectric film, which includes Sr and Ti and has a first bandgap, and a second perovskite dielectric film, which includes Sr and Ti and has a second bandgap smaller than the first bandgap, are stacked alternately, each of the first and second perovskite dielectric films being doped to have an electric conductivity, the first and the second perovskite dielectric films having respective compositions such that there appears a bandoffset of 0.54 eV in maximum between a conduction band of the first perovskite dielectric film and a conduction band of the second perovskite dielectric film.

Abstract: A thermoelectric conversion device includes a perovskite film over a substrate and formed with first and second electrodes on the perovskite film, wherein the perovskite film includes a domain having a crystal orientation different from a crystal orientation of a crystal that constitutes the perovskite film.

Abstract: A fuel cell system includes a fuel cell configured to generate electric power with a fuel gas and an oxygen gas fed to the fuel cell and to discharge exhaust gas including CO2 as a result of generating the electric power; a CO extraction part configured to reduce the CO2 in the exhaust gas fed to the CO extraction part to CO, the CO extraction part including a processing container fed with the exhaust gas and a CO2 adsorbing member provided in the processing container and formed of an oxide having an oxygen deficiency; and a CO recycling part configured to feed the extracted CO to the fuel cell as part of the fuel gas.

Abstract: The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.

Abstract: A gas generator includes a processing vessel defining a processing space and holding a support body therein, an evacuation system evacuating the processing space; a metal oxide film of a perovskite structure containing oxygen defects formed on the support body, a source gas supplying port supplying a source gas containing molecules of a source compound of carbon dioxide or water into the processing space, a gas outlet port for extracting a product gas containing molecules of a product compound in which oxygen atoms are removed from said source compound, and a heating part heating the support body.

Abstract: A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).

Abstract: A gas generator includes a processing vessel defining a processing space and holding a support body therein, an evacuation system evacuating the processing space; a metal oxide film of a perovskite structure containing oxygen defects formed on the support body, a source gas supplying port supplying a source gas containing molecules of a source compound of carbon dioxide or water into the processing space, a gas outlet port for extracting a product gas containing molecules of a product compound in which oxygen atoms are removed from said source compound, and a heating part heating the support body.

Abstract: The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10 as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.

Abstract: The plating method comprises the step of forming a resin layer 10 over a substrate 16; the step of cutting the surface part of the resin layer 10 with a cutting tool 12; the step of forming a seed layer 36 on the resin layer 10 by electroless plating; and the step of forming a plating film 44 on the seed layer 36 by electroplating. Suitable roughness can be give to the surface of the resin layer 10, whereby the adhesion between the seed layer 36 and the resin layer 10 can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer 10 as are by desmearing treatment, whereby a micronized pattern of a photoresist film 40 can be formed on the resin layer 10. Thus, interconnections 44, etc. can be formed over the resin layer 10 at a narrow pitch with high reliability ensured.