Abstract: Embodiments are directed to a method for repairing features of a host semiconductor wafer. The method includes forming a feature of the host semiconductor wafer, wherein the feature includes a first conductive material and a surface having a planar region and non-planar regions. The method further includes forming a metal conductive liner over the non-planar regions. The method further includes applying a second conductive material metal layer over said the conductive liner. The method further includes recessing the second conductive material to be substantially planar with the planar region.

Abstract: Embodiments herein describe a through-substrate via formed in a semiconductor substrate that includes a transistor. In one embodiment, the through via includes a BJT which includes different doped semiconductor layers that form a collector, a base, and an emitter. The through via can also include metal contacts to the collector, base, and emitter which enable the through to be coupled to a metal routing layer or a solder bump.

Abstract: Real time cognitive monitoring of correlations between variables including receiving, by a circuit, a first set of data results and a second set of data results, wherein each set of data results comprises binary data points; adding a unit of charge to a collection capacitor on the circuit for each of the first set of data results that indicates a positive data point; removing a unit of charge from the collection capacitor for each of the second set of data results that indicates a positive data point; and triggering a first sense amp on the circuit if the charge on the collection capacitor exceeds a high charge threshold, indicating that the positive data points in the first set of data results is greater than the positive data points in the second set of data results to a first statistical significance.

Abstract: Optimizing data approximation analysis using low power circuitry including receiving a first set of data results and a second set of data results; charging a first capacitor on the circuit with a unit of charge for each of the first set of data results that indicates a positive data point; charging a second capacitor on the circuit with the unit of charge for each of the second set of data results that indicates a positive data point; applying a voltage from the first capacitor and a voltage from the second capacitor to a FET on the circuit, wherein a current flows through the FET toward an output of the circuit if the voltage on the first capacitor is greater than the voltage on the second capacitor and a difference in the voltage of the first capacitor and the second capacitor is greater than a threshold voltage of the FET.

Abstract: Optimizing data approximation analysis using low power circuitry including receiving a first set of data results and a second set of data results; charging a first capacitor on the circuit with a unit of charge for each of the first set of data results that indicates a positive data point; charging a second capacitor on the circuit with the unit of charge for each of the second set of data results that indicates a positive data point; applying a voltage from the first capacitor and a voltage from the second capacitor to a FET on the circuit, wherein a current flows through the FET toward an output of the circuit if the voltage on the first capacitor is greater than the voltage on the second capacitor and a difference in the voltage of the first capacitor and the second capacitor is greater than a threshold voltage of the FET.

Abstract: Real time cognitive reasoning using a circuit with varying confidence level alerts including receiving a first set of data results and a second set of data results; transferring a first unit of charge from a first charge capacitor on the A-B circuit to a collection capacitor on the A-B circuit for each of the first set of data results that indicates a positive data point; transferring a second unit of charge from a second charge capacitor to the collection capacitor for each of the second set of data results that indicates a positive data point; and triggering a first sense amp on the A-B circuit if the charge on the collection capacitor exceeds a first charge threshold, indicating that the positive data points in the first set of data results is greater than the positive data points in the second set of data results to a first statistical significance with a first confidence level.

Abstract: Embodiments herein describe a through-substrate via formed in a semiconductor substrate that includes a transistor. In one embodiment, the through via includes a BJT which includes different doped semiconductor layers that form a collector, a base, and an emitter. The through via can also include metal contacts to the collector, base, and emitter which enable the through to be coupled to a metal routing layer or a solder bump.

Abstract: Embodiments herein describe a through-substrate via formed in a semiconductor substrate that includes a transistor. In one embodiment, the through-substrate via includes a BJT which includes different doped semiconductor layers that form a collector, a base, and an emitter. The through-substrate via can also include metal contacts to the collector, base, and emitter which enable the through-substrate via to be coupled to a metal routing layer or a solder bump.

Abstract: Real time cognitive monitoring of correlations between variables including receiving, by a circuit, a first set of data results and a second set of data results, wherein each set of data results comprises binary data points; adding a unit of charge to a collection capacitor on the circuit for each of the first set of data results that indicates a positive data point; removing a unit of charge from the collection capacitor for each of the second set of data results that indicates a positive data point; and triggering a first sense amp on the circuit if the charge on the collection capacitor exceeds a high charge threshold, indicating that the positive data points in the first set of data results is greater than the positive data points in the second set of data results to a first statistical significance.

Abstract: Cognitive analysis using applied analog circuits including receiving, by a circuit, a first set of data results and a second set of data results; charging a first capacitor on the circuit with a first unit of charge for each of the first set of data results that indicates a positive data point; charging a second capacitor on the circuit with a second unit of charge for each of the second set of data results that indicates a positive data point; applying a charge from the first capacitor and a charge from the second capacitor to an analog unit of the circuit; and generating a signal on a circuit output indicating that a ratio of the positive data points in the first set of data results to the positive data points in the second set of data results is greater than a statistical significance.

Abstract: Cognitive analysis using applied analog circuits including receiving, by a circuit, a first set of data results and a second set of data results; charging a first capacitor on the circuit with a first unit of charge for each of the first set of data results that indicates a positive data point; charging a second capacitor on the circuit with a second unit of charge for each of the second set of data results that indicates a positive data point; applying a charge from the first capacitor and a charge from the second capacitor to an analog unit of the circuit; and generating a signal on a circuit output indicating that a ratio of the positive data points in the first set of data results to the positive data points in the second set of data results is greater than a statistical significance.

Abstract: Real time cognitive reasoning using a circuit with varying confidence level alerts including receiving a first set of data results and a second set of data results; transferring a first unit of charge from a first charge capacitor on the A-B circuit to a collection capacitor on the A-B circuit for each of the first set of data results that indicates a positive data point; transferring a second unit of charge from a second charge capacitor to the collection capacitor for each of the second set of data results that indicates a positive data point; and triggering a first sense amp on the A-B circuit if the charge on the collection capacitor exceeds a first charge threshold, indicating that the positive data points in the first set of data results is greater than the positive data points in the second set of data results to a first statistical significance with a first confidence level.

Abstract: A method and circuit for implementing Electronic Fuse (eFuse) visual security of stored data using embedded dynamic random access memory (EDRAM), and a design structure on which the subject circuit resides are provided. The circuit includes EDRAM and eFuse circuitry having an initial state of a logical 0. The outputs of the eFuse and an EDRAM are connected through an exclusive OR (XOR) gate, enabling EDRAM random data to be known at wafer test and programming of the eFuse to provide any desired logical value out of the XORed data combination.

Abstract: A circuit for testing a memory includes a complementary charge trap memory cell, which includes a first transistor and a second transistor. A logical value of the cell corresponds to respective states of the first transistor and the second transistor. The circuit further includes a first bitline coupled to the first transistor, where the first transistor is configured to apply a first voltage to the first bitline. The circuit includes a second bitline coupled to the second transistor, where the second transistor is configured to apply a second voltage to the second bitline. The circuit also includes a sense circuit configured to output, prior to programming of the complementary charge trap memory cell, a logical high signal or a logical low signal in response to the first voltage on the first bitline and the second voltage on the second bitline.

Abstract: On a semiconductor die, a testing controller identifies a first partition unit with a first operating frequency lower than a second operating frequency of an adjacent second partition unit. A metal mask is added between one or more first header switches of the first partition unit and one or more second header switches of the second partition unit to allow the first partition unit to use a selection of the one or more second header switches for power distribution to the first partition unit.

Abstract: Optimizing data approximation analysis using low power circuitry including receiving a plurality of data bits each corresponding to a binary indication of a test result; placing each of the plurality of data bits on an approximation circuit, wherein each of the data bits is placed on the approximation circuit by applying, to a first capacitor during a set time period, a voltage corresponding to the data bit, and wherein placing each of the plurality of data bits on the approximation circuit results in a resulting voltage stored on the first capacitor; and determining a potential correlation of the test results by comparing the resulting voltage to a voltage threshold.

Abstract: Predicting data correlation using multivalued logical outputs in SRAM storage cells including generating a plurality of logical outputs for each of a plurality of variable sets, wherein each variable in each variable set is a data point, and wherein each logical output is a binary indication of a relationship between the data points; writing, into storage cells, each logical output of the plurality of logical outputs for each of the plurality of variable sets; and for each group of corresponding logical outputs of the plurality of logical outputs: activating a fight port for the storage cells storing corresponding logical outputs, wherein activating the fight port causes each corresponding logical output to adjust a resulting voltage based on the logical output stored in each storage cell; and measuring the resulting voltage on a bitline of the activated fight port to determine a correlation probability for the corresponding logical outputs.

Abstract: Optimizing data approximation analysis using low power circuitry including receiving a first set of data results and a second set of data results; charging a first capacitor on the circuit with a unit of charge for each of the first set of data results that indicates a positive data point; charging a second capacitor on the circuit with the unit of charge for each of the second set of data results that indicates a positive data point; applying a voltage from the first capacitor and a voltage from the second capacitor to a FET on the circuit, wherein a current flows through the FET toward an output of the circuit if the voltage on the first capacitor is greater than the voltage on the second capacitor and a difference in the voltage of the first capacitor and the second capacitor is greater than a threshold voltage of the FET.

Abstract: Big data analysis using low power circuit design including storing a plurality of data bits in a plurality of cells on a bitline of a dynamic random access memory (DRAM), wherein each data bit corresponds to a test result, and wherein each of the plurality of cells on the bitline is associated with a different wordline; precharging the bitline to a midpoint voltage between a low voltage corresponding to a low data bit and a high voltage corresponding to a high data bit; activating, at the same time, each wordline associated with each of the plurality of cells on the bitline, wherein activating each wordline causes a voltage to be applied to the bitline from each of the plurality of cells; and measuring a resulting voltage on the bitline to obtain a value corresponding to a percentage of the test results that indicate a passing test result.

Abstract: Optimizing data approximation analysis using low power circuitry including receiving a first set of data results and a second set of data results; charging a first capacitor on the circuit with a unit of charge for each of the first set of data results that indicates a positive data point; charging a second capacitor on the circuit with the unit of charge for each of the second set of data results that indicates a positive data point; applying a voltage from the first capacitor and a voltage from the second capacitor to a FET on the circuit, wherein a current flows through the FET toward an output of the circuit if the voltage on the first capacitor is greater than the voltage on the second capacitor and a difference in the voltage of the first capacitor and the second capacitor is greater than a threshold voltage of the FET.