Abstract: A method of tailoring BEOL RC parametrics to improve chip performance. According to the method, an integrated circuit design on an integrated circuit chip is analyzed. The analysis comprises calculating Vmax for vias and metal lines in the integrated circuit design over a range of sizes for the vias and the metal lines. Predicted use voltage for applications on the integrated circuit chip is determined. The size or the location of at least one of the vias and the metal lines is tailored based on performance parameters of the integrated circuit chip.

Abstract: A method of tailoring BEOL RC parametrics to improve chip performance. According to the method, an integrated circuit design on an integrated circuit chip is analyzed. The analysis comprises calculating Vmax for vias and metal lines in the integrated circuit design over a range of sizes for the vias and the metal lines. Predicted use voltage for applications on the integrated circuit chip is determined. The size or the location of at least one of the vias and the metal lines is tailored based on performance parameters of the integrated circuit chip.

Abstract: A shielding and decoupling capacitor structure can be fabricated within an integrated circuit (IC) by forming recesses in a top surface of a dielectric layer and forming a trench in a top surface of an intra-metal dielectric portion of a metal layer deposited on the top surface of the dielectric layer. A bottom of the trench exposes the recesses. A bottom of each recess exposes a conductive structure. A first plate may be formed by depositing a conductive liner onto the bottom and side of the recess and onto the bottom and side of the trench. A conformal dielectric film may be deposited onto the first plate within the trench and recesses. A second plate may be formed by depositing an electrically conductive material within the trench and recesses over the conformal dielectric film. The conformal dielectric film electrically insulates the first and second plates from each other.

Abstract: Generating a unique die identifier for an electronic chip including placing the electronic chip in an identifier generation state, wherein the electronic chip comprises a set of test circuits, wherein each of the set of test circuits is attached to a corresponding component on the electronic chip; obtaining an ordered list of race pairs of the set of test circuits; for each race pair in the ordered list of race pairs of the set of test circuits: selecting the race pair of test circuits; executing a race between the selected race pair; and adding an element to the unique die identifier based on an outcome of the executed race; and returning the electronic chip to an operational state.

Abstract: A shielding and decoupling capacitor structure can be fabricated within an integrated circuit (IC) by forming recesses in a top surface of a dielectric layer and forming a trench in a top surface of an intra-metal dielectric portion of a metal layer deposited on the top surface of the dielectric layer. A bottom of the trench exposes the recesses. A bottom of each recess exposes a conductive structure. A first plate may be formed by depositing a conductive liner onto the bottom and side of the recess and onto the bottom and side of the trench. A conformal dielectric film may be deposited onto the first plate within the trench and recesses. A second plate may be formed by depositing an electrically conductive material within the trench and recesses over the conformal dielectric film. The conformal dielectric film electrically insulates the first and second plates from each other.

Abstract: A method of forming a semiconductor device includes forming a sacrificial layer in a first contact hole of a first dielectric layer, forming a second dielectric layer on the first dielectric layer, and forming a second contact hole in the second dielectric layer, the second contact hole being aligned with the first contact hole, removing the sacrificial layer from the first contact hole, forming a liner layer on the second dielectric layer and in the first and second contact holes, and forming a copper contact in the first and second contact holes.

Abstract: A method of forming a semiconductor device includes forming a sacrificial layer in a first contact hole of a first dielectric layer, forming a second dielectric layer on the first dielectric layer, and forming a second contact hole in the second dielectric layer, the second contact hole being aligned with the first contact hole, removing the sacrificial layer from the first contact hole, and forming a copper contact in the first and second contact holes.

Abstract: A method and circuit for implementing a hidden security key in Electronic Fuses (eFuses), and a design structure on which the subject circuit resides are provided. The circuit includes a race condition circuit coupled to a latching structure. The race condition circuit is characterized including respective driver strengths of each stage in the race as well as a sampling clock during chip testing. The data is used to store drive strengths for each stage in eFuses and is used to get a logical one or logical zero out of the final latching stage of the race condition circuit.

Abstract: A method of forming a semiconductor device includes forming a sacrificial layer in a first contact hole of a first dielectric layer, forming a second dielectric layer on the first dielectric layer, and forming a second contact hole in the second dielectric layer, the second contact hole being aligned with the first contact hole, removing the sacrificial layer from the first contact hole, forming a liner layer on the second dielectric layer and in the first and second contact holes, and forming a copper contact in the first and second contact holes.

Abstract: Embodiments are directed to a method for repairing features of a host semiconductor wafer. The method includes forming a feature of the host semiconductor wafer, wherein the feature includes a first conductive material and a surface having a planar region and non-planar regions. The method further includes forming a metal conductive liner over the non-planar regions. The method further includes applying a second conductive material metal layer over said the conductive liner. The method further includes recessing the second conductive material to be substantially planar with the planar region.

Abstract: Embodiments are directed to a method for repairing features of a host semiconductor wafer. The method includes forming a feature of the host semiconductor wafer, wherein the feature includes a first conductive material and a surface having a planar region and non-planar regions. The method further includes forming a metal conductive liner over the non-planar regions. The method further includes applying a second conductive material metal layer over said the conductive liner. The method further includes recessing the second conductive material to be substantially planar with the planar region.

Abstract: Predicting data correlation using multivalued logical outputs in SRAM storage cells including generating a plurality of logical outputs for each of a plurality of variable sets, wherein each variable in each variable set is a data point, and wherein each logical output is a binary indication of a relationship between the data points; writing, into storage cells, each logical output of the plurality of logical outputs for each of the plurality of variable sets; and for each group of corresponding logical outputs of the plurality of logical outputs: activating a fight port for the storage cells storing corresponding logical outputs, wherein activating the fight port causes each corresponding logical output to adjust a resulting voltage based on the logical output stored in each storage cell; and measuring the resulting voltage on a bitline of the activated fight port to determine a correlation probability for the corresponding logical outputs.

Abstract: Generating a unique die identifier for an electronic chip including placing the electronic chip in an identifier generation state, wherein the electronic chip comprises a set of test circuits, wherein each of the set of test circuits is attached to a corresponding component on the electronic chip; obtaining an ordered list of race pairs of the set of test circuits; for each race pair in the ordered list of race pairs of the set of test circuits: selecting the race pair of test circuits; executing a race between the selected race pair; and adding an element to the unique die identifier based on an outcome of the executed race; and returning the electronic chip to an operational state.

Abstract: On a semiconductor die, a testing controller identifies a first partition unit with a first operating frequency lower than a second operating frequency of an adjacent second partition unit. A metal mask is added between one or more first header switches of the first partition unit and one or more second header switches of the second partition unit to allow the first partition unit to use a selection of the one or more second header switches for power distribution to the first partition unit.

Abstract: A method and circuit for implementing Electronic Fuse (eFuse) visual security of stored data using embedded dynamic random access memory (EDRAM), and a design structure on which the subject circuit resides are provided. The circuit includes EDRAM and eFuse circuity having an initial state of a logical 0. The outputs of the eFuse and an EDRAM are connected through an exclusive OR (XOR) gate, enabling EDRAM random data to be known at wafer test and programming of the eFuse to provide any desired logical value out of the XORed data combination.

Abstract: A method and system are provided for implementing resistive defect performance mitigation for integrated circuits. A test is generated for identifying resistive defects. A first self heating repair process is performed for repairing resistive defects. Testing is performed to identify a mitigated resistive defect and a functional integrated circuit. Responsive to identifying a resistive defect not being mitigated and a functional integrated circuit, a second repair process is performed, then testing is performed again.

Abstract: Embodiments are directed to a method of mitigating voltage noise events. The method includes detecting the presence of a voltage noise event at the integrated circuit device. Thereafter, one or more local clock buffers (LCBs) is selected for dampening. A type of dampening is selected for the LCBs. Finally, the dampening is applied to the LCB while the voltage noise event is occurring.

Abstract: A method of making a semiconductor device in a gate first process with side gate assists. A first gate may be formed within a gate region. The first gate may include a first gate conductor separated from a semiconductor substrate by a first insulator disposed between the first gate conductor and the semiconductor substrate. A second gate may be formed within the gate region. The second gate may include a second gate conductor separated from a vertical surface of the first gate conductor and the semiconductor substrate by a second insulator. A first electrical contact and a second electrical contact may be formed. The first and second electrical contacts may be disposed on opposite ends of the gate region for respectively connecting the first gate conductor and the second gate conductor to a respective voltage.

Abstract: A circuit for testing a memory includes a complementary charge trap memory cell, which includes a first transistor and a second transistor. A logical value of the cell corresponds to respective states of the first transistor and the second transistor. The circuit further includes a first bitline coupled to the first transistor, where the first transistor is configured to apply a first voltage to the first bitline. The circuit includes a second bitline coupled to the second transistor, where the second transistor is configured to apply a second voltage to the second bitline. The circuit also includes a sense circuit configured to output, prior to programming of the complementary charge trap memory cell, a logical high signal or a logical low signal in response to the first voltage on the first bitline and the second voltage on the second bitline.

Abstract: A circuit for testing a memory includes a complementary charge trap memory cell, which includes a first transistor and a second transistor. A logical value of the cell corresponds to respective states of the first transistor and the second transistor. The circuit further includes a first bitline coupled to the first transistor, where the first transistor is configured to apply a first voltage to the first bitline. The circuit includes a second bitline coupled to the second transistor, where the second transistor is configured to apply a second voltage to the second bitline. The circuit also includes a sense circuit configured to output, prior to programming of the complementary charge trap memory cell, a logical high signal or a logical low signal in response to the first voltage on the first bitline and the second voltage on the second bitline.