Abstract: Apparatuses and methods for memory arrays with separate global read and write lines and/or sense amplifier region column select lines are disclosed. An example apparatus includes first and second memory sections, and further includes a sense amplifier region. A memory section includes a word line extending in a first direction and a digit line extending in a second direction, and the sense amplifier region is disposed between the first and second memory sections. The sense amplifier region includes a sense amplifier coupled to the digit line, a local input/output (LIO) line, a column select circuit coupled to the sense amplifier, and a column select line. The column select line extends in the first direction and is configured to provide a column select signal to the column select circuit. Capacitance of a LIO line may be reduced by coupling fewer sense amplifiers of a group to the LIO line.

Abstract: Apparatuses and methods for compressing data responsive to a plurality of memory accesses is described. An example compression circuit includes a comparator configured to compare data provided by a group of memory cells associated with a repair address. Each subset of one or more bits of the data is sequentially provided by the group of memory cells responsive to a respective memory access of a plurality of memory accesses. The example compression circuit further including an error bit latch coupled to the comparison circuit. The error bit latch configured to, responsive to an output received from the comparison circuit indicating an error, compress the data to an error bit by setting the error bit to an error detected state and latching the error bit having the error detected state.

Abstract: Circuits, integrated circuits, and methods are disclosed for bimodal disable circuits. In one such example method, a counter is maintained, with the counter indicating a logic level at which an output signal will be disabled during at least a portion of one of a plurality of disable cycles. The logic level indicated by the counter is transitioned. An input signal is provided as the output signal responsive to the enable signal indicating that the output signal is to be enabled, and the output signal is disabled at the logic level indicated by the counter responsive to the enable signal indicating that the output signal is to be disabled.

Abstract: Some embodiments include apparatuses and methods having an input node to receive a first voltage, an output node to provide an output voltage, and a charge pump to generate the output voltage based on the first voltage. The charge pump can include a control node to receive a control signal for controlling at least one switch of the charge pump, such that the output voltage includes a value greater than a value of the first voltage. The control signal can include a level corresponding to a second voltage having a value greater than the value of the output voltage. Additional apparatus and methods are described.

Abstract: Apparatuses and methods related to memory arrays with separate global read and write lines and/or sense amplifier region column select lines are disclosed. An example apparatus includes first and second memory sections, and further includes a sense amplifier region. A memory section includes a word line extending in a first direction and a digit line extending in a second direction, and the sense amplifier region is disposed between the first and second memory sections. The sense amplifier region includes a sense amplifier coupled to the digit line, a local input/output (LIO) line, a column select circuit coupled to the sense amplifier, and a column select line. The column select line extends in the first direction and is configured to provide a column select signal to the column select circuit. Capacitance of a LIO line may be reduced by coupling fewer sense amplifiers of a group to the LIO line.

Abstract: A DRAM device includes an ECC generator/checker that generates ECC syndromes corresponding to items of data stored in the DRAM device. The DRAM device also includes an ECC controller that causes the ECC syndromes to be stored in the DRAM device. The ECC controller also causes a flag bit having a first value to be stored in the DRAM device when a corresponding ECC syndrome is stored. The ECC controller changes the flag bit to a second value whenever the corresponding data bits are modified, this indicating that the stored syndrome no longer corresponds to the stored data. In such case, the ECC controller causes a new ECC syndrome to be generated and stored, and the corresponding flag bit is reset to the first value. The flag bits may be checked in this manner during a reduced power refresh to ensure that the stored syndromes correspond to the stored data.

Abstract: Apparatuses and methods for compressing data responsive to a plurality of memory accesses is described. An example compression circuit includes a comparator configured to compare data provided by a group of memory cells associated with a repair address. Each subset of one or more bits of the data is sequentially provided by the group of memory cells responsive to a respective memory access of a plurality of memory accesses. The example compression circuit further including an error bit latch coupled to the comparison circuit. The error bit latch configured to, responsive to an output received from the comparison circuit indicating an error, compress the data to an error bit by setting the error bit to an error detected state and latching the error bit having the error detected state.

Abstract: Circuits, integrated circuits, and methods are disclosed for bimodal disable circuits. In one such example method, a counter is maintained, with the counter indicating a logic level at which an output signal will be disabled during at least a portion of one of a plurality of disable cycles. The logic level indicated by the counter is transitioned. An input signal is provided as the output signal responsive to the enable signal indicating that the output signal is to be enabled, and the output signal is disabled at the logic level indicated by the counter responsive to the enable signal indicating that the output signal is to be disabled.

Abstract: Circuits, integrated circuits, and methods are disclosed for bimodal disable circuits. In one such example method, a counter is maintained, with the counter indicating a logic level at which an output signal will be disabled during at least a portion of one of a plurality of disable cycles. The logic level indicated by the counter is transitioned. An input signal is provided as the output signal responsive to the enable signal indicating that the output signal is to be enabled, and the output signal is disabled at the logic level indicated by the counter responsive to the enable signal indicating that the output signal is to be disabled.

Abstract: A DRAM device includes an ECC generator/checker that generates ECC syndromes corresponding to items of data stored in the DRAM device. The DRAM device also includes an ECC controller that causes the ECC syndromes to be stored in the DRAM device. The ECC controller also causes a flag bit having a first value to be stored in the DRAM device when a corresponding ECC syndrome is stored. The ECC controller changes the flag bit to a second value whenever the corresponding data bits are modified, this indicating that the stored syndrome no longer corresponds to the stored data. In such case, the ECC controller causes a new ECC syndrome to be generated and stored, and the corresponding flag bit is reset to the first value. The flag bits may be checked in this manner during a reduced power refresh to ensure that the stored syndromes correspond to the stored data.

Abstract: Circuits, integrated circuits, and methods are disclosed for bimodal disable circuits. In one such example method, a counter is maintained, with the counter indicating a logic level at which an output signal will be disabled during at least a portion of one of a plurality of disable cycles. The logic level indicated by the counter is transitioned. An input signal is provided as the output signal responsive to the enable signal indicating that the output signal is to be enabled, and the output signal is disabled at the logic level indicated by the counter responsive to the enable signal indicating that the output signal is to be disabled.

Abstract: A DRAM device includes an ECC generator/checker that generates ECC syndromes corresponding to items of data stored in the DRAM device. The DRAM device also includes an ECC controller that causes the ECC syndromes to be stored in the DRAM device. The ECC controller also causes a flag bit having a first value to be stored in the DRAM device when a corresponding ECC syndrome is stored. The ECC controller changes the flag bit to a second value whenever the corresponding data bits are modified, this indicating that the stored syndrome no longer corresponds to the stored data. In such case, the ECC controller causes a new ECC syndrome to be generated and stored, and the corresponding flag bit is reset to the first value. The flag bits may be checked in this manner during a reduced power refresh to ensure that the stored syndromes correspond to the stored data.

Abstract: A DRAM device includes an ECC generator/checker that generates ECC syndromes corresponding to items of data stored in the DRAM device, The DRAM device also includes an ECC controller that causes the ECC syndromes to be stored in the DRAM device. The ECC controller also causes a flag bit having a first value to be stored in the DRAM device when a corresponding ECC syndrome is stored. The ECC controller changes the flag bit to a second value whenever the corresponding data bits are modified, this indicating that the stored syndrome no longer corresponds to the stored data. In such case, the ECC controller causes a new ECC syndrome to be generated and stored, and the corresponding flag bit is reset to the first value. The flag bits may be checked in this manner during a reduced power refresh to ensure that the stored syndromes correspond to the stored data.

Abstract: Circuits, integrated circuits, and methods are disclosed for bimodal disable circuits. In one such example method, a counter is maintained, with the counter indicating a logic level at which an output signal will be disabled during at least a portion of one of a plurality of disable cycles. The logic level indicated by the counter is transitioned. An input signal is provided as the output signal responsive to the enable signal indicating that the output signal is to be enabled, and the output signal is disabled at the logic level indicated by the counter responsive to the enable signal indicating that the output signal is to be disabled.

Abstract: Circuits, integrated circuits, and methods are disclosed for bimodal disable circuits. In one such example method, a counter is maintained, with the counter indicating a logic level at which an output signal will be disabled during at least a portion of one of a plurality of disable cycles. The logic level indicated by the counter is transitioned. An input signal is provided as the output signal responsive to the enable signal indicating that the output signal is to be enabled, and the output signal is disabled at the logic level indicated by the counter responsive to the enable signal indicating that the output signal is to be disabled.

Abstract: Various embodiments include apparatus, methods, and systems that operate to extend the processes of reading, modifying, and writing data stored in or being provided to a memory array without interrupting a continual stream of data to be written into the memory array. Embodiments may include an apparatus comprising a memory array, and an error code module coupled to the memory array with a data buffer having a plurality of data burst registers operable to receive a plurality of data bursts to be written to the memory array on a corresponding plurality of consecutive clock cycles. The error code module is operable to perform a read/modify/write process on each of the plurality of data bursts within a time period no longer than a period of two consecutive cycles of the plurality of consecutive clock cycles.

Abstract: Some embodiments include apparatus, systems, and methods having a base, a first die, a second arranged in a stacked with the first die and the base, and a structure located in the stack and outside at least one of the first and second dice and configured to transfer signals between the base and at least one of the first and second dice.

Abstract: Various embodiments include apparatus, methods, and systems that operate to extend the processes of reading, modifying, and writing data stored in or being provided to a memory array without interrupting a continual stream of data to be written into the memory array. Embodiments may include an apparatus comprising a memory array, and an error code module coupled to the memory array with a data buffer having a plurality of data burst registers operable to receive a plurality of data bursts to be written to the memory array on a corresponding plurality of consecutive clock cycles. The error code module is operable to perform a read/modify/write process on each of the plurality of data bursts within a time period no longer than a period of two consecutive cycles of the plurality of consecutive clock cycles.

Abstract: Various embodiments include apparatus, methods, and systems that operate to extend the processes of reading, modifying, and writing data stored in or being provided to a memory array without interrupting a continual stream of data to be written into the memory array. Embodiments may include an apparatus comprising a memory array, and an error code module coupled to the memory array with a data buffer having a plurality of data burst registers operable to receive a plurality of data bursts to be written to the memory array on a corresponding plurality of consecutive clock cycles. The error code module is operable to perform a read/modify/write process on each of the plurality of data bursts within a time period no longer than a period of two consecutive cycles of the plurality of consecutive clock cycles.

Abstract: Some embodiments include apparatus, systems, and methods having a base, a first die, a second arranged in a stacked with the first die and the base, and a structure located in the stack and outside at least one of the first and second dice and configured to transfer signals between the base and at least one of the first and second dice.