Abstract: SOI substrates containing an embedded release layer that is composed of a transition metal-containing material that has high temperature stability, is infrared energy absorbing, and is compatible with complementary metal oxide semiconductor (CMOS), front-end-of-the-line (FEOL) and back-end-of-the-line (BEOL) processes are provided. The presence of the embedded release layer in the SOI substrates allows for rapid substrate thinning/removal by infrared ablation without the need of using grinding, polishing and etching methods.

Abstract: A package structure includes a substrate having an upper surface; a first chip package positioned on the upper surface of the substrate, the first chip package comprising a first chip having a first integrated circuit connected to a first redistribution layer; a second chip package positioned on the upper surface of the substrate, the second chip package comprising a second chip having a second integrated circuit connected to a second redistribution layer; an orthogonal bridge positioned between the first chip package and the second chip package and having an interconnection to the first redistribution layer and the second redistribution layer; and a heat spreader positioned in direct contact with at least one of the first chip package, the second chip package, or the orthogonal bridge. The orthogonal bridge is arranged substantially orthogonal to the upper surface of the substrate.

Abstract: A base substrate, high-k substrate layers on the base substrate with discrete decoupling capacitors embedded, high density substrate layers on the high-k substrate layers supporting wiring and wiring spacing of less than 2 up to about 10 micron width, pitch connectivity between the upper surface of the base substrate and a lower surface of the set of high density substrate layers supports less than 50 up to about 300 micron pitch, the pitch connectivity on an upper surface of the set of high density substrate layers supports less than about 150 micron pitch. A method including attaching a set of metal posts at each contact on a lower surface of a set of high density substrate layers, attaching to a handler, attaching an interconnect layer to a base substrate, and attaching the set of high density substrate layers to the base substrate while aligning each metal post with a contact.

Abstract: A method for manufacturing an electronic package includes etching one or more lateral surfaces of a PCB laminate to expose power and ground planes of the PCB laminate. A protective coating is applied to the exposed power and ground planes. At least one heat-generating component is affixed to a top surface of the PCB laminate. A heat spreader having a base section and flanged edges is formed and attached to the heat-generating components and the PCB laminate lateral surfaces, where the flanged edges of the heat spreader are thermally connected to the PCB laminate lateral surfaces. During operation of the heat-generating components, the flanged edges dissipate heat from the PCB laminate lateral surfaces.

Abstract: An electronic device in which an electrically-insulating and highly thermal conductive sheet is located at the interconnect level is provided. The presence of the electrically-insulating and highly thermal conductive sheet at the interconnect level provides a significant reduction in the temperature of the electronic device, without causing excess stress in the electronic device. This results in electronic devices that have improved performance and reliability.

Abstract: A semiconductor integrated circuit device includes a first back-end-of-line region coupled to a first side of a front-end-of-line region, a second back-end-of-line region coupled to a second side of the front-end-of-line region, and a thermally conducting solder at least partially surrounding a perimeter of the front-end-of-line region, the first back-end-of-line region and the second back-end-of-line region.

Abstract: Co-package optics structures are provided in which an electromagnetic radiation absorption material layer is used to attach an optical link and/or waveguide structure to a coupling area that is located on a photonic integrated chip. The electromagnetic radiation absorption material layer can provide permanent or a non-permanent attachment between the optical link and/or waveguide structure and the coupling area of the photonic integrated chip. In the non-permanent embodiment, testing can be performed to determine whether the optical link and/or waveguide structure is defective, and if determined to be defective, the defective optical link and/or waveguide structure can be replaced by a replacement optical link and/or waveguide structure by removing the electromagnetic radiation absorption material layer that attaches the defective structure.

Abstract: A mechanism is provided in a data processing system to implement a multi-sensor health monitoring platform. The mechanism applies a machine learning model to predict patient needs and patient activity trends based on physiological features and activity features of the patient. The mechanism applies the machine learning model to predict energy requirements for a plurality of medical sensors based on the predicted patient needs and patient activity trends. The mechanism schedules recharging of the plurality of medical sensors based on the predicted energy requirements and identifying one or more sensors to set to an activate state based on the predicted patient needs and patient activity trends. The mechanism collecting sensor data from the one or more sensors and applies the machine learning model to generate a point-of-care recommendation based on the collected sensor data.

Abstract: An interconnect for a semiconductor device includes a laminate substrate; a first plurality of electrical devices in or on a surface of the laminate substrate; a redistribution layer having a surface disposed on the surface of the laminate substrate; a second plurality of electrical devices in or on the surface of the redistribution layer; and a plurality of transmission lines between the first plurality of electrical devices and the second plurality of electrical devices. The surface of the laminate substrate and the surface of the redistribution layer are parallel to each other to form a dielectric structure and a conductor structure.

Abstract: A semiconductor structure includes a first back-end-of-line region coupled to a first side of a front-end-of-line region, a second back-end-of-line region coupled to a second side of the front-end-of-line region, and a thermally conducting region at least partially surrounding a perimeter of the front-end-of-line region, the first back-end-of-line region and the second back-end-of-line region.

Abstract: A stack structure that includes: a device wafer, a handler wafer, and a bonding structure disposed between the device wafer and the handler wafer, wherein one or both of the device wafer and the handler wafer have a release layer that is configured to be substantially or completely vaporized by infrared ablation when exposed to an infrared laser energy. The device wafer includes at least two consecutive layers adjacent the bonding structure that together include a plurality of fill portions that substantially or completely disable entry of the infrared laser energy into a plurality of layers of the device wafer below the two consecutive layers adjacent the bonding structure.

Abstract: Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a first semiconductor wafer and a second semiconductor wafer; and a bonding structure between the first semiconductor wafer and the second semiconductor wafer, where the bonding structure includes a first coaxial pad embedded in a first dielectric layer and a second coaxial pad embedded in a second dielectric layer, and the first coaxial pad is substantially aligned with the second coaxial pad. In one embodiment, the first coaxial pad includes an inner pad of substantially rectangular shape and an outer pad of substantially rectangular ring shape surrounding the inner pad.

Abstract: A semiconductor die package that has a substrate with one or more substrate layers with one or more substrate connections. A substrate layer can include one or more redistribution layers (RDLs). One or more dies (e.g., multiple dies) are disposed on a top substrate layer. The dies have one or more die external connections. Some of the die external connections are electrically connected to one or more substrate connections. One or more metallic dam stiffeners form into a dam enclosure that is disposed on and physically connected to the top substrate layer. The dam enclosure encloses one or more of the dies. The metallic dam enclosure has one or more electrically connected regions where the metallic dam enclosure is electrically connected to one or more of the substrate horizontal connections and one or more electrically insulated regions where the metallic dam enclosure is electrically insulated from one or more of the substrate horizontal connections and the substrate via connections.

Abstract: A heat spreader apparatus includes a first portion; a second portion; and a connecting portion between the first and second portions, with high-conductivity axes and a low-conductivity axis, the low-conductivity axis being directed between the first and second portions. In one or more embodiments, the first, second, and connecting portions are thermally anisotropic blocks, and the apparatus forms a rectangular prism.

Abstract: Systems, computer-implemented methods and/or computer program products that facilitate wearable multiplatform sensing are provided. In one embodiment, a computer-implemented method comprises: measuring, by a system operatively coupled to a processor, wirelessly on a nail plate, physiological data of an entity; integrating and synchronizing, by the system, the physiological data with other physiological data from one or more devices to form integrated physiological data; and analyzing, by the system, the integrated physiological data to detect one or more disorders.

Abstract: Handler wafers and methods of handling a wafer include positioning a handler, which is attached to a wafer by a bonding layer that comprises a debonding layer, an optical enhancement layer, and an anti-reflection layer. The handler is debonded from the wafer using a laser that emits laser energy at a wavelength that is absorbed by the debonding layer and that is confined to the debonding layer by the optical enhancement layer, such that the material of the debonding layer ablates when exposed to the laser energy to release the wafer.

Abstract: Thin Film Batteries are made of battery layers. Each battery layer has a substrate with one or more battery structures on the substrate surface. The battery structures have a first electrode connection and a second electrode, a first electrode (e.g. a cathode or anode) is electrically connected to the first electrode connection and a second electrode (e.g. an anode or cathode) is electrically connected to the second electrode connection. An electrolyte is at least partial disposed between and electrically connected to the first and second electrodes. A first edge connection on one of the substrate edges is physically and electrically connected to the first electrode connection. A second edge connection on one of the substrate edges is physically and electrically connected to the second electrode connection. An electrically insulating lamination is disposed on the substrate and covers the components except for the first and second edge connections, connected to respective battery electrodes.

Abstract: An interposer sandwich structure includes a top interposer and a bottom interposer enclosing an integrated circuit electronic device that includes an attachment for attaching the device to the bottom interposer, and an interconnection structure connecting the top interposer to the bottom interposer. The top interposer may also be directly connected to a chip carrier in addition to the bottom interposer. The structure provides shielding and protection of the device against Electrostatic Discharge (ESD), Electromagnetic Interference (EMI), and Electromagnetic Conductivity (EMC) in miniaturized 3D packaging.

Abstract: One or more die stacks are disposed on a redistribution layer (RDL) to make an electronic package. The die stacks include a die and one or more Through Silicon Via (TSV) dies. Other components and/or layers, e.g. interposes layers, can be included in the structure. An epoxy layer disposed on the RDL top surface and surrounds and attached to all the TSV die sides and all the die sides. Testing circuitry is located in various locations in some embodiments. Locations including in the handler, die, TSV dies, interposes, etc. Testing methods are disclosed, Methods of making including “die first” and “die last” methods are also disclosed. Methods of making heterogenous integrated structure and the resulting structures are also disclosed, particularly for large scale, e.g. wafer and panel size, applications.

Abstract: Handler wafers and methods of handling a wafer include positioning a handler, which is attached to a wafer by a bonding layer that comprises a debonding layer, an optical enhancement layer, and an anti-reflection layer. The handler is debonded from the wafer using a laser that emits laser energy at a wavelength that is absorbed by the debonding layer and that is confined to the debonding layer by the optical enhancement layer, such that the material of the debonding layer ablates when exposed to the laser energy to release the wafer.