Abstract: A method for attaching a handler to a wafer, the wafer comprising an integrated circuit (IC), includes forming a layer of an adhesive on the wafer, the adhesive comprising a polyimide-based polymer configured to withstand processing at a temperature of over about 280° C.; and adhering a handler to the wafer using the layer of adhesive. A system for attaching a handler to a wafer, the wafer comprising IC, includes a layer of an adhesive located on the wafer, the adhesive comprising a polyimide-based polymer configured to withstand processing at a temperature of over about 280° C.; and a handler adhered to the wafer using the layer of adhesive.

Abstract: A method for releasing a handler from a wafer, the wafer comprising an integrated circuit (IC), includes attaching the handler to the wafer using an adhesive comprising a thermoset polymer, the handler comprising a material that is transparent in a wavelength range of about 193 nanometers (nm) to about 400 nm; ablating the adhesive through the handler using a laser, wherein a wavelength of the laser is selected based on the transparency of the handler material; and separating the handler from the wafer.

Abstract: A method for releasing a handler from a wafer, the wafer comprising an integrated circuit (IC) includes attaching the handler to the wafer using an adhesive comprising a polymer; performing edge processing to remove an excess portion of the adhesive from an edge of the handler and wafer; ablating the adhesive through the handler using a laser, wherein a wavelength of the laser is selected based on the transparency of the handler material; and separating the handler from the wafer. A system for releasing a handler from a wafer, the wafer comprising an IC includes a handler attached to a wafer using an adhesive comprising a polymer; an edge processing module, the edge processing module configured to remove an excess portion of the adhesive from the edge of the handler and wafer; and a laser, the laser configured to ablate the adhesive through the handler.

Abstract: A method for attaching a handler to a wafer, the wafer comprising an integrated circuit (IC), includes forming a layer of an adhesive on the wafer, the adhesive comprising a polyimide-based polymer configured to withstand processing at a temperature of over about 280° C.; and adhering a handler to the wafer using the layer of adhesive. A system for attaching a handler to a wafer, the wafer comprising IC, includes a layer of an adhesive located on the wafer, the adhesive comprising a polyimide-based polymer configured to withstand processing at a temperature of over about 280° C.; and a handler adhered to the wafer using the layer of adhesive.

Abstract: A method of stacking a chip, including an integrated circuit, onto a substrate including applying an anisotropic conductive film (ACF) or a solder-filled conductive film onto a surface thereof, the surface being configured to electrically couple to the film, placing the chip onto the film, the chip being configured to electrically couple to the film, compressively pressurizing the chip, the film and the surface such that the chip is electrically coupled to the surface via the film,, testing the chip to determine whether the chip is operating normally, reworking the placement of the chip onto the film and repeating the compressive pressurization if the chip is determined to not be operating normally, repeating the testing to determine whether the chip is operating normally, and once the chip is determined to be operating normally, bonding the chip, the film and the surface.

Abstract: A method for removing a thinned silicon structure from a substrate, the method includes selecting the silicon structure with soldered connections for removal; applying a silicon structure removal device to the silicon structure and the substrate, wherein the silicon structure removal device comprises a pre-determined temperature setpoint for actuation within a range from about eighty percent of a melting point of the soldered connections to about the melting point; heating the silicon structure removal device and the soldered connections of the silicon structure to within the range to actuate the silicon structure removal device; and removing the thinned silicon structure. Also disclosed is a structure including a plurality of layers, at least one layer including a thinned silicon structure and solder coupling the layer to another layer of the plurality; wherein the solder for each layer has a predetermined melting point.

Abstract: Techniques for electronic device fabrication are provided. In one aspect, an electronic device is provided. The electronic device comprises at least one interposer structure having one or mote vias and a plurality of decoupling capacitors integrated therein, the at least one interposer structure being configured to allow for one or more of the plurality of decoupling capacitors to be selectively deactivated. In another aspect, a method of fabricating an electronic device comprising at least one interposer structure having one or more vias and a plurality of decoupling capacitors integrated therein comprises the following step.

Abstract: Disclosed is a method of forming an integrated circuit structure that forms lead-free connectors on a device, surrounds the lead-free connectors with a compressible film, connects the device to a carrier (the lead-free connectors electrically connect the device to the carrier), and fills the gaps between the carrier and the device with an insulating underfill.

Abstract: A method of forming compliant electrical contacts includes patterning a conductive layer into an array of compliant members. The array of compliant members is then positioned to be in contact with electrical connection pads on an integrated circuit wafer and the compliant members are joined to the pads. Then, the supporting layer that supported the compliant members is removed to leave the compliant members connected to the pads.

Abstract: A method and apparatus for the formation of coplanar electrical interconnectors. Solder material is deposited onto a wafer, substrate, or other component of an electrical package using a complaint mold such that the terminal ends of the solder material being deposited, i.e., the ends opposite to those forming an attachment to the wafer, substrate, or other component of an electrical package are coplanar with one another. A complaint mold is used having one or more conduits for receiving solder material and having a compliant side and a planar side. The compliant side of the mold is positioned adjacent to the wafer, substrate, or other component of an electrical package allowing solder material to be deposited onto the surface thereof such that the planar side of the compliant mold provides coplanar interconnectors. An Injection Molded Solder (IMS) head can be used as the means for filling the conduits of the compliant mold of the present invention.

Abstract: Under the present invention, a semiconductor chip is electrically connected to a substrate (e.g., organic, ceramic, etc.) by an interposer structure. The interposer structure comprises an elastomeric, compliant material that includes metallurgic through connections having a predetermined shape. In a typical embodiment, the metallurgical through connections electrically connect an under bump metallization of the semiconductor chip to a top surface metallization of the substrate. By utilizing the interposer structure in accordance with the present invention, the problems associated with previous semiconductor module designs are alleviated.

Abstract: A system, method, and apparatus for injection molding conductive bonding material into a plurality of cavities in a surface are disclosed. The method comprises aligning a fill head with a surface. The mold includes a plurality of cavities. The method further includes placing the fill head in substantial contact with the surface. At least a first gas is channeled about a first region of the fill head. The at least first gas has a temperature above a melting point of conductive bonding material residing in a reservoir thereby maintaining the conductive bonding material in a molten state. The conductive bonding material is forced out of the fill head toward the surface. The conductive bonding material is provided into at least one cavity of the plurality of cavities contemporaneous with the at least one cavity being in proximity to the fill head.

Abstract: A system, method, and apparatus of providing conductive bonding material into a plurality of cavities in a circuit supporting substrate is disclosed. The method comprises placing a fill head in substantial contact with a circuit supporting substrate. The circuit supporting substrate includes at least one cavity. A linear motion or a rotational motion is provided to at least one of the circuit supporting substrate and the fill head while the fill head is in substantial contact with the circuit supporting substrate. Conductive bonding material is forced out of the fill head toward the circuit supporting substrate. The conductive bonding material is provided into the at least one cavity contemporaneous with the at least one cavity being in proximity to the fill head.

Abstract: A system, method, and device for applying conductive bonding material to a substrate are disclosed. The method includes providing conductive bonding material in a plurality of cavities of a mold. A total number of cavities in the plurality of cavities being greater than a total number of at least one conductive pad of a circuit supporting substrate corresponding to the mold. The conductive bonding material in the mold is heated to a reflow temperature of the conductive bonding material. At least one wettable surface is placed in substantial contact with the heated conductive bonding material in at least one cavity. The mold and the corresponding circuit supporting substrate are brought in close proximity to each other such that the heated conductive bonding material in at least one cavity comes in contact with at least one conductive pad of the corresponding circuit supporting substrate.

Abstract: A system and method are provided for injection molding conductive bonding material into a plurality of cavities in a mold within a vacuum chamber. A mold and a fill head are located within a vacuum chamber, wherein the mold includes a plurality of cavities. A vacuum is created within the vacuum chamber, thereby removing air from the chamber and from the cavities. Optionally, rotational motion is provided to at least one of the mold and the fill head while the fill head is in substantial contact with the mold. Conductive bonding material is forced out of the fill head toward the mold, and into at least one of the cavities, while a vacuum is maintained in the vacuum chamber.

Abstract: A system and method for injection molding conductive bonding material into a plurality of cavities in a non-rectangular mold is disclosed. The method comprises aligning a fill head with a non-rectangular mold. The non-rectangular mold includes a plurality of cavities. The fill head is placed in substantial contact with the non-rectangular mold. Rotational motion is provided to at least one of the non-rectangular mold and the fill head while the fill head is in substantial contact with the non-rectangular mold. Conductive bonding material is forced out of the fill head toward the non-rectangular mold. The conductive bonding material is provided into at least one cavity of the plurality of cavities contemporaneous with the at least one cavity being in proximity to the fill head.

Abstract: An electronic dive and method of fabricating an electronic device. The method including placing a placement guide over a top surface of a module substrate, the placement guide having a guide opening, the guide opening extending from a top surface of the placement guide to a bottom surface of the placement guide; aligning the placement guide to an integrated circuit chip position on the module substrate; fixing the placement guide to the module substrate; placing an integrated circuit chip in the guide opening, sidewalls of the placement guide opening constraining electrically conductive bonding structures on bottom surface of the integrated circuit chip to self-align to an electrically conductive module substrate contact pad on the top surface of the module substrate in the integrated circuit chip position; and bonding the bonding structures to the module substrate contact pads, the bonding structures and the module substrate contact pads in direct physical and electrical contact after the bonding.

Abstract: A physically secure processing assembly is provided that includes dies mounted on a substrate so as to sandwich the electrical contacts of the dies between the dies and the substrate. The substrate is provided with substrate contacts and conductive pathways that are electrically coupled to the die contacts and extend through the substrate. Electrical conductors surround the conductive pathways. A monitoring circuit detects a break in continuity of one or more of the electrical conductors, and preferably renders the assembly inoperable. Preferably, an epoxy encapsulation is provided to prevent probing tools from being able to reach the die or substrate contacts.

Abstract: Ball Grid Array packages having decreased adhesion of the BGA pad to the laminate surface and methods for producing same are provided.

Abstract: Disclosed is a laminated (or non-laminated) conductive interconnection for joining an integrated circuit device to a device carrier, where the conductive interconnection comprises alternating metal layers and polymer layers. In addition, the polymer can include dendrites, metal projections from the carrier or device, and/or micelle brushes on the outer portion of the polymer. The polymer layers include metal particles and the alternating metal layers and polymer layers form either a cube-shaped structure or a cylinder-shaped structure.