Abstract: A drug administration management system according to an embodiment of the present disclosure may include a smart case configured to accommodate a drug administration device, display drug administration information including whether or not a drug is administered and a drug administration dose for each drug administration site input button based on an input of a user, and transmit the drug administration information externally; and a terminal configured to receive the externally transmitted drug administration information from the smart case, and monitor the drug administration information based on a drug administration plan input from a user.

Abstract: A plug connector according to an embodiment of the present disclosure, wherein the housing of the plug connector includes a mating portion extending forward and a latching portion equipped in the housing. The latching portion may include, as a root having a lower end connected to the upper surface of the housing, a root extending to the upper end with the lower end of the route as a first fulcrum to form a cantilever structure; and as a pair of latching arms having a rear end connected to an upper end of the root, a pair of latching arms extending to the front end with the upper end of the root as a second fulcrum to form a pair of hooks. Each front end of the pair of latching arms may include an outward protrusion.

Abstract: An electrical connector according to a disclosed embodiment includes a housing having a terminal receiving opening, and a TPA member mounted outside the terminal receiving opening to fix a position of a terminal. The TPA member includes first and second side cantilever arms which are extended from both ends of the TPA member, respectively, and are positioned outside a sidewall of the housing, the housing is not in contact with the TPA member in a preliminary mounting position, and the housing is latch-coupled with the first and second side cantilever arms in a final mounting position.

Abstract: A memory module may include: a battery; a plurality of devices including a first memory, a second memory, and a controller; and a power management integrated circuit configured to adjust a level of a battery power, received from the battery, and configured to supply a power supply voltage to each of the plurality of devices.

Abstract: A memory module may include: a battery; a plurality of devices including a first memory, a second memory, and a controller; and a power management integrated circuit configured to adjust a level of a battery power, received from the battery, and configured to supply a power supply voltage to each of the plurality of devices.

Abstract: A memory module may include: a battery; a plurality of devices including a first memory, a second memory, and a controller; and a power management integrated circuit configured to adjust a level of a battery power, received from the battery, and configured to supply a power supply voltage to each of the plurality of devices.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A memory module may include: a battery; a plurality of devices including a first memory, a second memory, and a controller; and a power management integrated circuit configured to adjust a level of a battery power, received from the battery, and configured to supply a power supply voltage to each of the plurality of devices.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A memory module may include a module substrate having first and second surfaces facing away from each other, a plurality of first memories mounted over one or more of the first and second surfaces, one or more second memories and a controller each mounted over one of the first and second surfaces of the module substrate, and a plurality of batteries mounted over one or more of the first and second surfaces of the module substrate.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A memory module may include: a battery; a plurality of devices including a first memory, a second memory, and a controller; and a power management integrated circuit configured to adjust a level of a battery power, received from the battery, and configured to supply a power supply voltage to each of the plurality of devices.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A memory module may include a module substrate having first and second surfaces facing away from each other, a plurality of first memories mounted over one or more of the first and second surfaces, one or more second memories and a controller each mounted over one of the first and second surfaces of the module substrate, and a plurality of batteries mounted over one or more of the first and second surfaces of the module substrate.

Abstract: Provided is a gas detection apparatus including: a main body in which a gas sensor is mounted; an inlet part disposed under the main body to introduce a gas present in a detection space; and a plurality of inlet holes formed to pass through the inlet part, wherein, in each of the inlet holes, an area of an inlet facing the detection space is greater than that of an outlet facing the main body.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A memory module may include a module substrate having first and second surfaces facing away from each other, a plurality of first memories mounted over one or more of the first and second surfaces, one or more second memories and a controller each mounted over one of the first and second surfaces of the module substrate, and a plurality of batteries mounted over one or more of the first and second surfaces of the module substrate.