Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A method for fabricating a semiconductor device includes: forming a mold stack pattern including a plurality of openings in an upper portion of a substrate and including a mold layer and a supporter layer which are stacked; forming a bottom electrode layer filling the plurality of the openings and covering the supporter layer; forming a filler portion disposed inside the plurality of the openings, a barrier portion extended upwardly from the filler portion, and an electrode cutting portion exposing a surface of the supporter layer by selectively etching the bottom electrode layer; forming a supporter by using the barrier portion as an etch barrier and etching the supporter layer exposed by the electrode cutting portion; selectively removing the barrier portion to form a hybrid pillar-type bottom electrode disposed inside the plurality of the openings; and removing the mold layer.

Abstract: A memory module may include a module substrate having first and second surfaces facing away from each other, a plurality of first memories mounted over one or more of the first and second surfaces, one or more second memories and a controller each mounted over one of the first and second surfaces of the module substrate, and a plurality of batteries mounted over one or more of the first and second surfaces of the module substrate.

Abstract: A memory module may include a module substrate having first and second surfaces facing away from each other, a plurality of first memories mounted over one or more of the first and second surfaces, one or more second memories and a controller each mounted over one of the first and second surfaces of the module substrate, and a plurality of batteries mounted over one or more of the first and second surfaces of the module substrate.

Abstract: An ESC may include a dielectric layer, an electrode, a pedestal, a heater, an adhesive and a protecting ring. The dielectric layer may be configured to support a substrate. The electrode may be disposed in the dielectric layer and is configured to form plasma over the substrate. The pedestal may be disposed under the dielectric layer. The heater may be disposed between the pedestal and the dielectric layer and is configured to heat the substrate. The adhesive may be disposed between the pedestal and the heater, and between the heater and the dielectric layer. The protecting ring may be configured to surround the adhesive. The protecting ring may include a plasma-resistant material.

Abstract: A memory system may include a memory module including a plurality of memory devices suitable for storing a data word containing multi-bit data, and a memory controller suitable for controlling a write operation and a read operation of the memory module and distributing and mapping the data word to the plurality of memory devices, wherein as a memory device has a higher error occurrence count among the memory devices, the controller maps higher-significant bits of the multi-bit data to the memory device.

Abstract: A memory controller includes: a write performance storage circuit suitable for storing write performance indexes of physical memory areas of a memory device, a write counting circuit suitable for counting a number of requests of a write operation on logical memory areas of the memory device, and a mapping circuit suitable for mapping a logical memory area, for which the number of requests of the write operation r may be relatively large, to a physical memory area with a better write performance index.

Abstract: A memory module may include a module substrate having first and second surfaces facing away from each other, a plurality of first memories mounted over one or more of the first and second surfaces, one or more second memories and a controller each mounted over one of the first and second surfaces of the module substrate, and a plurality of batteries mounted over one or more of the first and second surfaces of the module substrate.

Abstract: A continuous variable valve lift engine may include determining whether an engine is in an idle state and an oil temperature of an engine is within a predetermined range, controlling, the engine in a predetermined control state when the engine is in the idle state and the oil temperature is within the predetermined range, and measuring, an error occurrence time when an error occurs in controlling the engine in the control state, and controlling the engine while switching the engine to a predetermined passive state when the error occurrence time is more than a preset time.

Abstract: An ESC may include a dielectric layer, an electrode, a pedestal, a heater, an adhesive and a protecting ring. The dielectric layer may be configured to support a substrate. The electrode may be disposed in the dielectric layer and is configured to form plasma over the substrate. The pedestal may be disposed under the dielectric layer. The heater may be disposed between the pedestal and the dielectric layer and is configured to heat the substrate. The adhesive may be disposed between the pedestal and the heater, and between the heater and the dielectric layer. The protecting ring may be configured to surround the adhesive. The protecting ring may include a plasma-resistant material.

Abstract: A continuous variable valve lift engine may include determining whether an engine is in an idle state and an oil temperature of an engine is within a predetermined range, controlling, the engine in a predetermined control state when the engine is in the idle state and the oil temperature is within the predetermined range, and measuring, an error occurrence time when an error occurs in controlling the engine in the control state, and controlling the engine while switching the engine to a predetermined passive state when the error occurrence time is more than a preset time.

Abstract: A method for manufacturing a MIM capacitor trench structure includes forming a lower metal film on an inter-metal dielectric; forming a first inter-metal dielectric on the lower metal film; forming a first trench; sequentially forming a dielectric film and a first barrier metal film along the bottom surface and sidewalls of the first trench; and filling the first trench with a conductive material to form a first upper metal film. Further, the method includes forming a second inter-metal dielectric on the first upper metal film; forming a second trench; forming a via hole in a via hole region of the second inter-metal dielectric; forming a second barrier metal film along the bottom surface and sidewalls of the second trench; and filling the via hole and the second trench with the conductive material to form a via contact and a second upper metal film.

Abstract: A method for forming a capacitor dielectric includes depositing a zirconium oxide layer, performing a post-treatment on the zirconium oxide layer such that the zirconium oxide layer has a tetragonal phase, and depositing a tantalum oxide layer over the zirconium oxide layer such that the tantalum oxide layer has a tetragonal phase.

Abstract: A conductive layer may be fabricated on a semiconductor substrate by loading a silicon substrate in to a chamber whose inside temperature is at a loading temperature in the range of approximately 250° C. to approximately 300° C., increasing the inside temperature of the chamber from the loading temperature to a process temperature, and sequentially stacking a single crystalline silicon layer and a polycrystalline silicon layer over the silicon substrate by supplying a silicon source gas and an impurity source gas in to the chamber, where the chamber may be, for example, a CVD chamber or a LPCVD chamber.

Abstract: A continuously variable valve timing (CVVT) system which may be operated in cooperation with a continuously variable valve lift (CVVL) engine may be included. A reference position of a suction CVVT may be set by a spring. In addition, a method for controlling a continuously variable valve timing (CVVT) system may be included. The method includes setting a reference position of a suction CVVT to a most advanced angle position, and controlling a delayed angle amount at the reference position of the most advanced angle.

Abstract: A method for forming a capacitor dielectric includes depositing a tantalum oxide layer over a substrate, performing a post-treatment on the tantalum oxide layer to provide the tantalum oxide layer with a tetragonal phase, and depositing a zirconium oxide layer over the tantalum oxide layer such that the zirconium oxide layer has a tetragonal phase.

Abstract: A capacitor includes a lower electrode, a first dielectric layer formed over the lower electrode, a second dielectric layer formed over the first dielectric layer, wherein the second dielectric layer includes an amorphous high-k dielectric material, a third dielectric layer formed over the second dielectric layer, and an upper electrode formed over the third dielectric layer. The third dielectric layer can be thicker than the first dielectric layer.

Abstract: A semiconductor device, includes: a first storage node contact plug penetrating a first interlayer insulation layer and partially protruding above the first interlayer insulation layer; a second storage node contact plug contacting the first storage node contact plug that protrudes above the first interlayer insulation layer; a storage node contacting a top surface of the second storage node contact plug; and a second interlayer insulation layer formed over the first interlayer insulation layer, wherein the second interlayer insulation layer surrounds an outer sidewall at a bottom region of the first storage node, and the second storage node contact plug, and wherein the first storage node contact plug protruding above the first interlayer insulation layer and the second storage node contact plug.

Abstract: A semiconductor device, includes: a first storage node contact plug penetrating a first interlayer insulation layer and partially protruding above the first interlayer insulation layer; a second storage node contact plug contacting the first storage node contact plug that protrudes above the first interlayer insulation layer; a storage node contacting a top surface of the second storage node contact plug; and a second interlayer insulation layer formed over the first interlayer insulation layer, wherein the second interlayer insulation layer surrounds an outer sidewall at a bottom region of the first storage node, and the second storage node contact plug, and wherein the first storage node contact plug protruding above the first interlayer insulation layer and the second storage node contact plug.

Abstract: A semiconductor device, includes: a first storage node contact plug penetrating a first interlayer insulation layer and partially protruding above the first interlayer insulation layer; a second storage node contact plug contacting the first storage node contact plug that protrudes above the first interlayer insulation layer; a storage node contacting a top surface of the second storage node contact plug; and a second interlayer insulation layer formed over the first interlayer insulation layer, wherein the second interlayer insulation layer surrounds an outer sidewall at a bottom region of the first storage node, and the second storage node contact plug, and wherein the first storage node contact plug protruding above the first interlayer insulation layer and the second storage node contact plug.