Abstract: The present invention is related to a method for fabricating a capacitor capable of preventing a contact between neighboring lower electrodes even if a height of the lower electrode increases. The lower electrode is formed to have a critical dimension wider at a bottom region than at a top region to thereby be firmly supported. Also, a wider distance between the lower electrodes prevents neighboring lower electrodes from contacting to each other. As a result of these effects, it is possible to prevent a failure of dual bit, which eventually results in higher yields of semiconductor devices.

Abstract: A capacitor and a method of manufacturing the same are disclosed. The BST dielectric film is disposed between the lower electrode by coating a sidewall of the upper electrode and then forming the lower electrode in a second contact hole defined by the upper electrode and BST film. As such, degradation in the step coverage characteristic caused by forming a BST dielectric film having a desired composition ratio is avoided.

Abstract: A fuel injector is provided which comprises a swirl generator and a swirl regulator. The swirl regulator comprises an upper housing mounted to an upper part of said body and a lower housing including a center aperture, said lower housing and said upper housing cooperatively defining a plurality of cavities; a rotating member including a center shaft and a plurality of vanes formed thereon, said center shaft being rotatably disposed in said center aperture of said lower housing and coupled to said swirl generator, said vane being disposed in said cavity such that said cavity is divided into a first chamber and a second chamber, said first chamber communicating with said fuel passageway and said second chamber communicating with the outside of said injector; a biasing member forcing said rotating member to rotate against a force acting on said vane from a pressure difference between said fuel passageway and the outside of said injector.

Abstract: Provided is an on-chip reference current generating circuit for generating a reference voltage that can be digitally calibrated and is substantially not affected by changes in temperature and/or supply voltage. The on-chip reference current generating circuit includes a summing circuit for receiving a first current having a negative temperature coefficient and a second current having a positive temperature coefficient, and outputting a third current based upon, is a sum of, the first and second currents; and a digital calibration circuit for calibrating the third current to be the reference current in response to a digital control signal. Using the on-chip reference current generating circuit, it is possible to precisely and digitally calibrate an offset between currents due to a change in temperature and/or supply voltage.

Abstract: A continuous variable suction system wherein the inner rotor is additionally installed at the inner side of the outer rotor to increase the variable scope of the suction runner length such that the runner length of an optimal suction oil passage per speed and load of an engine can be embodied to enhance the engine's performance. A dual rotor structure is formed to reduce the volume of the inner rotor, thereby decreasing the size of the surge tank, whereby lightness of the suction system can be realized and the manufacturing cost can be also saved by minimizing the size of the suction system.

Abstract: The present invention relates to a method for fabricating a capacitor in a semiconductor device capable of preventing a decrease in capacitance and improving a leakage current characteristic. The inventive method includes the steps of: forming a lower electrode on a substrate; cleaning the lower electrode with use of HF and NH4OH; nitrifying the lower electrode through a NH3 annealing; depositing a nitride layer on the nitrified lower electrode; and forming sequentially a dielectric material and an upper electrode on the nitride layer.

Abstract: This invention provides a capacitor and a method for manufacturing of the same, which are adaptable to preventing a lower electrode from being oxidized at a following thermal process. The capacitor includes: a lower electrode; an oxidation barrier layer formed on the lower electrode, wherein the oxidation barrier layer is formed of at least double nitridation layers; a dielectric layer formed on the oxidation barrier layer; and an upper electrode formed on the dielectric layer.

Abstract: A method for fabricating a capacitor of a semiconductor device for improving a capacitance and concurrently enhancing a leakage current characteristic and a breakdown voltage characteristic. The method includes the steps of: (a) forming a conductive silicon layer for a bottom electrode on a substrate; (b) nitridating the conductive silicon layer; (c) oxidizing the nitridated conductive silicon layer; (d) forming a silicon nitride layer on a surface of the oxidized layer; (e) forming a dielectric layer on the silicon nitride layer; and (f) forming a top electrode on the dielectric layer.

Abstract: The present invention is related to a method for fabricating a capacitor capable of preventing a contact between neighboring lower electrodes even if a height of the lower electrode increases. The lower electrode is formed to have a critical dimension wider at a bottom region than at a top region to thereby be firmly supported. Also, a wider distance between the lower electrodes prevents neighboring lower electrodes from contacting to each other. As a result of these effects, it is possible to prevent a failure of dual bit, which eventually results in higher yields of semiconductor devices.

Abstract: A method for manufacturing a capacitor including forming an electrode with a top portion having relatively smaller width than its bottom portion. The method includes the steps of: forming a seed layer on a semiconductor substrate; forming a first insulating layer on the seed layer; forming an opening unit which has relatively larger width in a top portion than a bottom portion by selectively etching the first insulating layer and the seed layer; forming a second insulating layer on the seed layer which is exposed after forming the opening unit; removing the first insulating layer using an etching which uses a selective etching ratio between the first insulating layer and the second insulating layer; after removing the first insulating layer, forming a bottom electrode on the exposed seed layer using an electro plating (EP) method; and removing the second insulating layer.

Abstract: The present invention relates to a method for fabricating a capacitor in a semiconductor device; and, more particularly, to a method for fabricating a capacitor capable of stably forming a nitride layer on a lower electrode and obtaining improvements on stable capacitance and leakage current characteristics. The inventive method for fabricating a capacitor includes the steps of: forming a lower electrode on a substrate; forming a nitride-based first dielectric thin layer on the lower electrode; forming a second dielectric thin layer by depositing an Al2O3 layer on the nitride-based first dielectric thin layer; forming a third dielectric thin layer on the second dielectric thin layer; and forming an upper electrode on the third dielectric thin layer.

Abstract: The present invention provides a GDI injector of a vehicle engine that can change the level of swirl motion and make it possible to increase engine output and fuel mileage, comprising a nozzle body having an opening along its longitudinal axis, a fuel inlet member, a cylindrically-shaped needle valve being centrally located within the opening of the nozzle body, and a swirl generator, the swirl generator comprising: an inner case having a cylindrically-shaped body and a plurality of equally and angularly spaced lobes, the inner case being coupled to the needle; an outer case having a cylindrically-shaped body and a plurality of equally and angularly spaced grooves, the outer case being fixedly attached to the nozzle body; and an inner case rotator.

Abstract: The present invention relates to a method for fabricating a capacitor in a semiconductor device; and, more particularly, to a method for fabricating a capacitor capable of stably forming a nitride layer on a lower electrode and obtaining improvements on stable capacitance and leakage current characteristics. The inventive method for fabricating a capacitor includes the steps of: forming a lower electrode on a substrate; forming a nitride-based first dielectric thin layer on the lower electrode; forming a second dielectric thin layer by depositing an Al2O3 layer on the nitride-based first dielectric thin layer; forming a third dielectric thin layer on the second dielectric thin layer; and forming an upper electrode on the third dielectric thin layer.

Abstract: The present invention relates to a method for fabricating a capacitor in a semiconductor device capable of preventing a decrease in capacitance and improving a leakage current characteristic. The inventive method includes the steps of: forming a lower electrode on a substrate; cleaning the lower electrode with use of HF and NH4OH; nitrifying the lower electrode through a NH3 annealing; depositing a nitride layer on the nitrified lower electrode; and forming sequentially a dielectric material and an upper electrode on the nitride layer.

Abstract: This invention provides a capacitor and a method for manufacturing of the same, which are adaptable to preventing a lower electrode from being oxidized at a following thermal process. The capacitor includes: a lower electrode; an oxidation barrier layer formed on the lower electrode, wherein the oxidation barrier layer is formed of at least double nitridation layers; a dielectric layer formed on the oxidation barrier layer; and an upper electrode formed on the dielectric layer.

Abstract: Provided is an on-chip reference current generating circuit for generating a reference voltage that can be digitally calibrated and is substantially not affected by changes in temperature and/or supply voltage. The on-chip reference current generating circuit includes a summing circuit for receiving a first current having a negative temperature coefficient and a second current having a positive temperature coefficient, and outputting a third current based upon, is a sum of, the first and second currents; and a digital calibration circuit for calibrating the third current to be the reference current in response to a digital control signal. Using the on-chip reference current generating circuit, it is possible to precisely and digitally calibrate an offset between currents due to a change in temperature and/or supply voltage.

Abstract: Provided is a method for fabricating a capacitor that prevents etching solution from attacking an inter-layer deposition layer in wet-etching an oxide which supports bottom electrodes.

Abstract: A capacitor and a method of manufacturing the same are disclosed. The BST dielectric film is disposed between the lower electrode by coating a sidewall of the upper electrode and then forming the lower electrode in a second contact hole defined by the upper electrode and BST film. As such, degradation in the step coverage characteristic caused by forming a BST dielectric film having a desired composition ratio is avoided.

Abstract: A fuel injector is provided which comprises a swirl generator and a swirl regulator. The swirl regulator comprises an upper housing mounted to an upper part of said body and a lower housing including a center aperture, said lower housing and said upper housing cooperatively defining a plurality of cavities; a rotating member including a center shaft and a plurality of vanes formed thereon, said center shaft being rotatably disposed in said center aperture of said lower housing and coupled to said swirl generator, said vane being disposed in said cavity such that said cavity is divided into a first chamber and a second chamber, said first chamber communicating with said fuel passageway and said second chamber communicating with the outside of said injector; a biasing member forcing said rotating member to rotate against a force acting on said vane from a pressure difference between said fuel passageway and the outside of said injector.

Abstract: A capacitor and a method of manufacturing the same are disclosed. The BST dielectric film is disposed between the lower electrode by coating a sidewall of the upper electrode and then forming the lower electrode in a second contact hole defined by the upper electrode and BST film. As such, degradation in the step coverage characteristic caused by forming a BST dielectric film having a desired composition ratio is avoided.