Abstract: Provided are a display device, a method of fabricating the display device, and a method of fabricating an image sensor device. The method of fabricating the display device includes preparing a substrate including a cell array area and a peripheral circuit area, forming a silicon layer on the peripheral circuit area of the substrate, forming oxide layers on the cell array area and the peripheral circuit area of the substrate, forming gate dielectric layers on the silicon layer and the oxide layers, forming the gate electrodes on the gate dielectric layers, wherein the gate electrodes expose both ends of the silicon layer and both ends of the oxide layers, and injecting dopant into both ends of the silicon layer and both ends of the oxide layers at the same time.

Abstract: Provided is a gate driving circuit. The gate driving circuit includes an ith modulation circuit and an ith line selection circuit (where i is a natural number greater than 1). The ith modulation circuit outputs an ith modulation voltage to an ith line selection circuit based on received first to third control signals. The ith line selection circuit includes a memory transistor that is turned on or turned off according to a level of the received ith modulation voltage.

Abstract: Provided is a display device and a method of manufacturing the same. The display device includes a reflective display part including a first cathode electrode and a first anode electrode and a liquid crystal layer, a light emitting display part including a second cathode electrode and a second anode electrode and a light emission film, and a thin film transistor part being electrically connected to the first and second anode electrodes. The light emitting display part further includes a bank disposed on one side of the second anode electrode between the second anode electrode and the light emission film.

Abstract: Provided is a display device. The display device includes a lower display element where a substrate, a first lower electrode, a liquid crystal part, and a second lower electrode are sequentially stacked, an upper display element stacked vertical to the lower display element, where a first upper electrode, a light emitting part, a second upper electrode, and a protective part are sequentially stacked, and a middle part configured to deliver a driving signal to the lower and upper display elements, between the lower and upper display elements.

Abstract: Provided is a display device. The display device includes: a pixel including an emissive element circuit, a reflective element circuit, and a switch transistor selecting one of the emissive element circuit and the reflective element circuit; an illumination sensor generating an illumination information signal according to an illumination of an external light source by detecting the external light source; and a controller generating control signals for driving the pixel according to pixel data, wherein the controller generates a light signal controlling the switch transistor by referencing the illumination information signal.

Abstract: Provided is a metal oxide thin film forming method including: vaporizing a first metal oxide precursor; allowing the vaporized first metal oxide precursor to flow into a mixture chamber by using a first carrier gas; injecting the flowed first metal oxide precursor on a substrate through a micro nozzle connected to the mixture chamber to form a first metal oxide precursor layer on the substrate; and emitting electromagnetic waves to the first metal oxide precursor layer to form a first metal oxide layer.

Abstract: Provided are a display device, a method of fabricating the display device, and a method of fabricating an image sensor device. The method of fabricating the display device includes preparing a substrate including a cell array area and a peripheral circuit area, forming a silicon layer on the peripheral circuit area of the substrate, forming oxide layers on the cell array area and the peripheral circuit area of the substrate, forming gate dielectric layers on the silicon layer and the oxide layers, forming the gate electrodes on the gate dielectric layers, wherein the gate electrodes expose both ends of the silicon layer and both ends of the oxide layers, and injecting dopant into both ends of the silicon layer and both ends of the oxide layers at the same time.

Abstract: Provided is a display device and a method of manufacturing the same. The display device includes a reflective display part including a first cathode electrode and a first anode electrode and a liquid crystal layer, a light emitting display part including a second cathode electrode and a second anode electrode and a light emission film, and a thin film transistor part being electrically connected to the first and second anode electrodes. The light emitting display part further includes a bank disposed on one side of the second anode electrode between the second anode electrode and the light emission film.

Abstract: Provided is a microanalysis method and system using a Field Effect Transistor (FET). The microanalysis method includes a channel region having a receptor molecule fixed; forming a nano-particle conjugate in the channel region by supplying a sample for test and the nano-particle conjugate to the FET; growing a probe material on the channel region; and measuring a current flowing through the channel region, wherein the receptor molecule is a material that is selectively bonded to a target molecule in the sample for test.

Abstract: Provided is a display device. The display device includes: a pixel including an emissive element circuit, a reflective element circuit, and a switch transistor selecting one of the emissive element circuit and the reflective element circuit; an illumination sensor generating an illumination information signal according to an illumination of an external light source by detecting the external light source; and a controller generating control signals for driving the pixel according to pixel data, wherein the controller generates a light signal controlling the switch transistor by referencing the illumination information signal.

Abstract: Provided is a microanalysis method and system using a Field Effect Transistor (FET). The microanalysis method includes a channel region having a receptor molecule fixed; forming a nano-particle conjugate in the channel region by supplying a sample for test and the nano-particle conjugate to the FET; growing a probe material on the channel region; and measuring a current flowing through the channel region, wherein the receptor molecule is a material that is selectively bonded to a target molecule in the sample for test.

Abstract: Provided are a device for storing a reagent capable of being adhered to a biochip and supplying the stored reagent to the biochip, and a method of discharging a reagent thereof. The device for storing a reagent includes an elastic film pressurizing part configured to pressurize an elastic film by magnetic force, and a reagent discharging part configured to store the reagent and discharge the reagent through an outlet by using the deformation in the elastic film due to the pressurization. According to the present invention, a magnetic force controlling device can be small-sized and the reagent can be automatically, high-precisely, and reproducibly supplied through the magnetic force control.

Abstract: Provided are a method and apparatus for measuring an isoelectric point using a field effect transistor. The method includes providing a field effect transistor including a substrate, source and drain electrodes disposed on the substrate and spaced apart from each other, and a channel region between the source and drain electrodes, providing a first electrolyte solution having a first concentration to the channel region of the field effect transistor and measuring a first current value of the channel region between the source and drain electrodes, providing a second electrolyte solution having a second concentration greater than the first concentration and measuring a second current value of the channel region between the source and drain electrodes, and determining the isoelectric point of the field effect transistor or a material disposed on the field effect transistor using a difference between the first and second current values.

Abstract: Provided is a biosensor chip. The biosensor chip includes a plurality of biosensor cells that are arranged in a matrix and selectively generate and output a sensed signal by addressing of external light, at least one sensing line that is simultaneously connected with the plurality of biosensor cells and transmits the sensed signal from one selected from the biosensor cells, and an output terminal that receives the sensed signal from the sensing line and outputs the sensed signal to an external reader. Thus, the biosensor cells are set in array in the biosensor chip without a separate driving unit, so that a process of manufacturing the biosensor chip is simplified. The biosensor cell to be sensed is selectively addressed through the external light, so that it is possible to reduce a price of the biosensor chip used as a disposable chip.

Abstract: Provided are an apparatus and method for detecting biomolecules. The apparatus includes a FET having a substrate, a source electrode, a drain electrode, a channel region between the source and drain electrodes, and probe molecules fixed to the channel region, wherein the source and drain electrodes are separated on the substrate, a microfluid supplier selectively supplying one of a reference buffer solution of low ionic concentration and a reaction solution of high ionic concentration containing target molecules, to the channel region of the FET to which the probe molecules are fixed, and a biomolecule detector detecting the target molecules by measuring a first current value of the channel region of the FET, and a second current value of the channel region of the FET to which the target molecules and the probe molecules that bind to each other in the reaction solution of high ionic concentration are fixed.

Abstract: Provided are a device for storing a reagent capable of being adhered to a biochip and supplying the stored reagent to the biochip, and a method of discharging a reagent thereof. The device for storing a reagent includes an elastic film pressurizing part configured to pressurize an elastic film by magnetic force, and a reagent discharging part configured to store the reagent and discharge the reagent through an outlet by using the deformation in the elastic film due to the pressurization. According to the present invention, a magnetic force controlling device can be small-sized and the reagent can be automatically, high-precisely, and reproducibly supplied through the magnetic force control.

Abstract: Provided is a blood pre-treating apparatus including an injecting part for injecting a blood sample, an albumin-removing part including albumin adsorption beads for removing albumins from the blood sample, and an agglutination part including an agglutination reactant, by which blood corpuscles in the blood sample may be agglutinated to form a hemagglutination reactant.

Abstract: Provided are a biosensor, an apparatus and a method for detecting a biomolecule using the biosensor. The biosensor may include a supporting substrate, a semiconductor layer spaced apart from a top surface of the supporting substrate by supporting patterns, and a nano-motor array formed on a top surface of the semiconductor layer. The nano-motor array may include a plurality of nano-metal rods configured to exhibit an autonomous propulsion in a fluid.

Abstract: Provided is a sensing device, which includes a reactive material layer (260) responding to a specific functional group in a fluid, a sensing capacitor (B) including first and second electrodes disposed on and under an insulating layer (230), the first electrode being disposed under the reactive material layer (260), and a field effect transistor including a gate electrode connected with the first electrode of the sensing capacitor. Here, the reactive material layer (260) is formed in a conductive three-dimensional structure to widen a surface area. Thus, the sensing device may have high sensitivity by maximizing a capacitor sharing effect and a change in voltage amount applied to a gate, which may be caused by widening a surface area of the conductive three-dimensional structure with respect to the fluid flow.

Abstract: A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.