Abstract: A camera system is provided. The camera system includes a first housing, a lens module accommodated in an inner space of the first housing, a support panel engaged to a side surface of the first housing, a magnet which is mounted on the lens module and confronts the support panel, and a drive portion which is arranged on the support panel and linearly moves the lens module in a direction of an optical axis, wherein the drive portion comprises a hall sensor portion for detecting displacement of the lens module, a coil fixed on a circuit board of the drive portion, and a controller for controlling current applied to the coil according to output of the hall sensor portion, and wherein the controller and the hall sensor portion are integrated in one chip.

Abstract: A camera system is provided. The camera system includes a first housing, a lens module accommodated in an inner space of the first housing, a support panel engaged to a side surface of the first housing, a magnet which is mounted on the lens module and confronts the support panel, and a drive portion which is arranged on the support panel and linearly moves the lens module in a direction of an optical axis, wherein the drive portion comprises a hall sensor portion for detecting displacement of the lens module, a coil fixed on a circuit board of the drive portion, and a controller for controlling current applied to the coil according to output of the hall sensor portion, and wherein the controller and the hall sensor portion are integrated in one chip.

Abstract: A device capable of controlling a supply voltage and a supply frequency using information of a manufacturing process variation includes a data storage device storing data indicating performance of the device, a decoder decoding the data stored in the data storage device and outputting decoded data, and a frequency control block outputting a frequency controlled clock signal in response to the decoded data output from the decoder. The device further includes a voltage control block outputting a level controlled supply voltage in response to the decoded data. The voltage control block outputs a body bias control voltage controlling a body bias voltage of at least one of a plurality of transistors embodied in the semiconductor device in response to the decoded data. The performance is operational speed of the device or leakage current of the semiconductor device.

Abstract: Semiconductor devices including spacers on sidewalls of conductive lines are provided. The semiconductor device includes bit lines on a semiconductor substrate, a storage node contact plug penetrating an insulation layer between the bit lines, triple-layered bit line spacers between the bit lines and the storage node contact plugs, and storage node electrodes on the storage node contact plugs. Each of the triple-layered bit line spacers includes a first spacer adjacent to one of the bit lines, a third spacer adjacent to the storage node contact plugs and a second spacer between the first and third spacers. The second spacer includes a lower portion having a lower dielectric constant than the first and third spacers and an upper portion having the same material as the first and third spacers. Related methods are also provided.

Abstract: In accordance with an aspect of the present invention a camera system comprising a lens module capable of linear movement in a direction of an optical axis; a drive portion generating for driving force to move said the lens module; a position sensor portion outputting a electrical signal to detect a position of the lens module; a image sensor portion outputting a electrical signal to capture image of a subject through the lens module; a control portion controlling the magnitude of driving force as the result that is judged by discriminating correct position to focus position of the lens module compared to real output and standard output of the position sensor corresponding to focus position of the subject to be detected as to output of the image sensor portion, wherein the control portion is composed of one chip.

Abstract: A device capable of controlling a supply voltage and a supply frequency using information of a manufacturing process variation includes a data storage device storing data indicating performance of the device, a decoder decoding the data stored in the data storage device and outputting decoded data, and a frequency control block outputting a frequency controlled clock signal in response to the decoded data output from the decoder. The device further includes a voltage control block outputting a level controlled supply voltage in response to the decoded data. The voltage control block outputs a body bias control voltage controlling a body bias voltage of at least one of a plurality of transistors embodied in the semiconductor device in response to the decoded data. The performance is operational speed of the device or leakage current of the semiconductor device.

Abstract: An apparatus and a method of connecting a portable terminal to a network, by which a specific network can be connected to through selection of a user, are provided. The apparatus includes a display unit for informing of a state of non-connection to a specific network and for displaying a menu item for connecting to the specific network, and a controller for controlling the portable terminal so as to search for and to connect to the specific network through selection of the menu item for connecting to the specific network when the portable terminal is not connected to the specific network.

Abstract: A system for dynamically scaling a power voltage including a system on chip (SoC) and a power control circuit. The SoC includes a plurality of application circuits. The SoC is configured to generate internal clock signals in response to an externally supplied clock signal. The SoC also generates a target voltage that changes based on a change of an operating current. The internal clock signals are respectively provided to the application circuits. The operating current is a sum or total current of the application circuits. The power control circuit generates an internal power voltage based on the target voltage and provides the internal power voltage to the SoC. The system for dynamically scaling a power voltage including a SoC may decrease power consumed in the SoC because the system of dynamically scaling a power voltage decreases a required voltage margin by changing a target voltage before a transition of the SoC current.

Abstract: There are provided an electrode structure of a piezoelectric resonator and a piezoelectric resonator including the same. The piezoelectric resonator includes: a piezoelectric plate vibrated by an electrical signal; and first and second electrodes having first to fourth layers stacked on both surfaces thereof, wherein the first and third layers are made of at least one selected from the group consisting of Ti, Ni, Cr, an alloy including Ti and an alloy including Cr and the second and fourth layers are made of Ag or an alloy including Ag.

Abstract: The invention relates to a graphic processing apparatus for stock/futures trading conditions is configured by systematically linking and deploying: a computing module capable of deriving various pieces of stock/futures trading information reflecting stock/futures trading conditions by stock/futures trading times and prices, within a communication pipeline at an exchange system; a computing module capable of producing a screen with stock/futures trading times and prices on a horizontal axis and on a vertical axis, and arranging CRIs (Cells for Recording Stock/Futures Trading Information) corresponding to stock/futures trading times and prices in a matrix configuration on the screen; and a computing module capable of generating an ST (Stock/Futures Trading Information Relation Graph Tag) conforming to stock/futures trading information by stock/futures trading times and prices, inputting the generated ST into the CRIs, and inducing the display of stock/futures trading information by stock/futures trading times a

Abstract: A device capable of controlling a supply voltage and a supply frequency using information of a manufacturing process variation includes a data storage device storing data indicating performance of the device, a decoder decoding the data stored in the data storage device and outputting decoded data, and a frequency control block outputting a frequency controlled clock signal in response to the decoded data output from the decoder. The device further includes a voltage control block outputting a level controlled supply voltage in response to the decoded data. The voltage control block outputs a body bias control voltage controlling a body bias voltage of at least one of a plurality of transistors embodied in the semiconductor device in response to the decoded data. The performance is operational speed of the device or leakage current of the semiconductor device.

Abstract: A system for dynamically scaling a power voltage including a system on chip (SoC) and a power control circuit. The SoC includes a plurality of application circuits. The SoC is configured to generate internal clock signals in response to an externally supplied clock signal. The SoC also generates a target voltage that changes based on a change of an operating current. The internal clock signals are respectively provided to the application circuits. The operating current is a sum or total current of the application circuits. The power control circuit generates an internal power voltage based on the target voltage and provides the internal power voltage to the SoC. The system for dynamically scaling a power voltage including a SoC may decrease power consumed in the SoC because the system of dynamically scaling a power voltage decreases a required voltage margin by changing a target voltage before a transition of the SoC current.

Abstract: There are provided an electrode structure of a piezoelectric resonator and a piezoelectric resonator including the same. The piezoelectric resonator includes: a piezoelectric plate vibrated by an electrical signal; and first and second electrodes having first to fourth layers stacked on both surfaces thereof, wherein the first and third layers are made of at least one selected from the group consisting of Ti, Ni, Cr, an alloy including Ti and an alloy including Cr and the second and fourth layers are made of Ag or an alloy including Ag.

Abstract: A system for dynamically scaling a power voltage including a system on chip (SoC) and a power control circuit. The SoC includes a plurality of application circuits. The SoC is configured to generate internal clock signals in response to an externally supplied clock signal. The SoC also generates a target voltage that changes based on a change of an operating current. The internal clock signals are respectively provided to the application circuits. The operating current is a sum or total current of the application circuits. The power control circuit generates an internal power voltage based on the target voltage and provides the internal power voltage to the SoC. The system for dynamically scaling a power voltage including a SoC may decrease power consumed in the SoC because the system of dynamically scaling a power voltage decreases a required voltage margin by changing a target voltage before a transition of the SoC current.

Abstract: A device capable of controlling a supply voltage and a supply frequency using information of a manufacturing process variation includes a data storage device storing data indicating performance of the device, a decoder decoding the data stored in the data storage device and outputting decoded data, and a frequency control block outputting a frequency controlled clock signal in response to the decoded data output from the decoder. The device further includes a voltage control block outputting a level controlled supply voltage in response to the decoded data. The voltage control block outputs a body bias control voltage controlling a body bias voltage of at least one of a plurality of transistors embodied in the semiconductor device in response to the decoded data. The performance is operational speed of the device or leakage current of the semiconductor device.

Abstract: Provided are a piezoelectric vibrator and an electrode structure of the piezoelectric vibrator. The piezoelectric vibrator includes a piezoelectric material vibrating according to an electric signal, first and second electrode structures formed on the upper surface and the undersurface of the piezoelectric material, and including first to fourth layers sequentially stacked thereon, respectively. The first and third layers are formed of an alloy including Cr. The second and fourth layers are formed of Ag or an alloy including Ag.

Abstract: A camera lens module is provided, in which a lens housing has at least one lens, a main frame contains the lens housing along an optical axis, a support portion is engaged with the lens housing and with the main frame to be rotatable along the optical axis, a cover is engaged with the main frame, for keeping the lens housing contained in the main frame, and a control member is engaged with the cover, for moving the support portion along the optical axis.

Abstract: A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate is provided. The hardmask layer is disposed below a patterned mask. The substrate is placed in a plasma processing chamber. The hardmask layer is opened by flowing a hardmask opening gas including a COS component into the plasma chamber, forming a plasma from the hardmask opening gas, and stopping the flow of the hardmask opening gas. The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O2.

Abstract: In accordance with an aspect of the present invention a camera system comprising a lens module capable of linear movement in a direction of an optical axis; a drive portion generating for driving force to move said the lens module; a position sensor portion outputting a electrical signal to detect a position of the lens module; a image sensor portion outputting a electrical signal to capture image of a subject through the lens module; a control portion controlling the magnitude of driving force as the result that is judged by discriminating correct position to focus position of the lens module compared to real output and standard output of the position sensor corresponding to focus position of the subject to be detected as to output of the image sensor portion, wherein the control portion is composed of one chip.

Abstract: A photovoltaic power conditioning system and method is provided. The system includes an isolated DC/DC converter (41), a DC/AC inverter (42), and a sine filter (43). The isolated DC/DC converter (41) receives a DC voltage from a solar cell through a parallel connection structure and converts the DC voltage into another DC voltage and then outputs the converted DC voltage through a series connection structure. The DC/AC inverter (42) converts the DC voltage output from the isolated DC/DC converter into an AC voltage. The sine filter (43) performs sine filtering on the AC voltage output from the DC/AC inverter and outputs the filtered AC voltage. The system employs a topology allowing it to be responsible for part of the output capacity, thereby significantly reducing the required capacity and increasing the system efficiency, so that the system can be applied to small and large-capacity photovoltaic power generation.