Patents by Inventor Jong Sam Kim
Jong Sam Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9141828Abstract: A mobile device management apparatus has a policy storage unit that receives a plurality of security policies, which are classified into a plurality of profiles assigned priorities of activation and in which operating states of functions of a mobile device are defined. A management server supplies the profiles and the security policies to the mobile device. A policy implementation unit selectively activates the profiles so that control of the mobile device functions can be carried out with minimal communication, and also in response to changing events.Type: GrantFiled: September 14, 2012Date of Patent: September 22, 2015Assignee: SAMSUNG SDS CO., LTD.Inventors: Hyun-Woo Jung, Jong-Sam Kim, Ho-Young Son, Ji-Joong Gil, Jin-Yong Kim
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Patent number: 9076886Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a void connected to the trench in the device isolation region, a first mask pattern formed along sidewalls of the trench and protruding inwardly with respect to the void, a gate insulating film formed along the sidewall of the void, and a gate electrode filling the trench and at least a portion of the void.Type: GrantFiled: August 6, 2013Date of Patent: July 7, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Il Park, Ae-Gyeong Kim, Jong-Sam Kim, Kyoung-Eun Uhm, Tae-Cheol Lee, Yong-Sang Jeong, Jin-Ha Jeong
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Publication number: 20150185745Abstract: A voltage generation circuit of a semiconductor apparatus includes a first detection block configured to detect an output voltage and output a first detection signal; a second detection block configured to detect the output voltage and output a second detection signal; a signal generation block configured to generate a control signal in response to the first detection signal and the second detection signal; and a voltage generation block configured to generate the output voltage in response to the control signal, wherein responding speeds of the first detection block and the second detection block with respect to a variation in the output voltage are different.Type: ApplicationFiled: April 2, 2014Publication date: July 2, 2015Applicant: SK hynix Inc.Inventor: Jong Sam KIM
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Publication number: 20150168966Abstract: A semiconductor apparatus includes a reference voltage generation unit configured to generate a reference voltage. The semiconductor apparatus also includes an internal voltage generation unit configured to generate an internal voltage which corresponds to a voltage level of the reference voltage. In addition, the semiconductor apparatus includes a noise generation unit configured to generate noise in the reference voltage according to noise of the internal voltage.Type: ApplicationFiled: April 3, 2014Publication date: June 18, 2015Applicant: SK hynix Inc.Inventor: Jong Sam KIM
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Publication number: 20150145055Abstract: Disclosed is a high voltage device including a substrate structure having a high voltage transistor and a lower wiring connected to the high voltage transistor, a linker structure having a supplemental insulation pattern on the substrate structure and an interconnecting linker penetrating through the supplemental insulation pattern and connected to the lower wiring, an insulation interlayer pattern on the supplemental insulation pattern, and an upper wiring structure penetrating through insulation interlayer pattern and connected to the interconnecting linker. The thickness of the inter-metal dielectric layer between the upper and the lower wirings is increased to thereby improve the insulation characteristics of the inter-metal dielectric layer. As a result, the breakdown voltage and the current leakage characteristics of the high voltage device are improved.Type: ApplicationFiled: October 9, 2014Publication date: May 28, 2015Inventor: Jong-Sam KIM
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Publication number: 20150117258Abstract: Provided are an apparatus and a method for changing a status of cluster nodes, which determine whether to change statuses of respective cluster nodes themselves to an active status or a standby status without intervention by a manager through self-diagnosis and change the status of the nodes.Type: ApplicationFiled: October 30, 2014Publication date: April 30, 2015Applicant: SAMSUNG SDS CO., LTD.Inventors: Jong Sam KIM, Ho Young SON, Hyun Soo KIM, Tack Su AN
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Patent number: 8993436Abstract: A method for fabricating a semiconductor device includes sequentially forming an etch stop film and an insulating film on a substrate including a lower pattern forming a conductive mask pattern including a first opening on the insulating film, forming a via-hole in the insulating film using the conductive mask pattern as an etch mask, the via-hole exposing the etch stop film, removing the conductive mask pattern, and forming a passivation film along a side wall of the via-hole after removing the conductive mask pattern.Type: GrantFiled: March 6, 2014Date of Patent: March 31, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Whan Ko, Jong-Sam Kim, Hong-Jae Shin, Seung-Il Bok, Sae-Il Son, Woo-Jin Jang
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Publication number: 20140347093Abstract: An internal voltage generation circuit of a semiconductor apparatus includes: an active driver configured to output an internal voltage to an output node; a standby driver configured to output the internal voltage to the output node; and a voltage stabilizer connected to the output node. The voltage stabilizer starts a voltage stabilization operation of supplying or receiving electric charges to or from the output node when an active enable signal is disabled, and stops the voltage stabilization operation in a predetermined time after the active enable signal is enabled.Type: ApplicationFiled: September 5, 2013Publication date: November 27, 2014Applicant: SK HYNIX INC.Inventor: Jong Sam KIM
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Patent number: 8884645Abstract: An internal voltage generation circuit of a semiconductor apparatus includes: an active driver configured to output an internal voltage to an output node; a standby driver configured to output the internal voltage to the output node; and a voltage stabilizer connected to the output node. The voltage stabilizer starts a voltage stabilization operation of supplying or receiving electric charges to or from the output node when an active enable signal is disabled, and stops the voltage stabilization operation in a predetermined time after to the active enable signal is enabled.Type: GrantFiled: September 5, 2013Date of Patent: November 11, 2014Assignee: SK Hynix Inc.Inventor: Jong Sam Kim
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Publication number: 20140308810Abstract: A method for fabricating a semiconductor device includes sequentially forming an etch stop film and an insulating film on a substrate including a lower pattern forming a conductive mask pattern including a first opening on the insulating film, forming a via-hole in the insulating film using the conductive mask pattern as an etch mask, the via-hole exposing the etch stop film, removing the conductive mask pattern, and forming a passivation film along a side wall of the via-hole after removing the conductive mask pattern.Type: ApplicationFiled: March 6, 2014Publication date: October 16, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong-Whan KO, Jong-Sam KIM, Hong-Jae SHIN, Seung-Il BOK, Sae-Il SON, Woo-Jin JANG
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Publication number: 20140042528Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a device isolation region, a trench formed in the device isolation region, a void connected to the trench in the device isolation region, a first mask pattern formed along sidewalls of the trench and protruding inwardly with respect to the void, a gate insulating film formed along the sidewall of the void, and a gate electrode filling the trench and at least a portion of the void.Type: ApplicationFiled: August 6, 2013Publication date: February 13, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Dong-Il Park, Ae-Gyeong Kim, Jong-Sam Kim, Kyoung-Eun Uhm, Tae-Cheol Lee, Yong-Sang Jeong, Jin-Ha Jeong
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Publication number: 20130176056Abstract: An inverter delay compensation circuit includes a comparison determination unit including a first delay circuit configured for receiving a reference signal and having an inverter chain and a second delay circuit configured for receiving the reference signal and more insensitive to a PVT variation than the first delay circuit, and configured to compare delay amounts of signals obtained by passing the reference signal through the first and second delay circuits, respectively, and the comparison determination unit configured for generating a plurality of control signals; and a compensation circuit unit configured to compensate for a delay amount of an input signal in response to the plurality of control signals and configured to output an output signal.Type: ApplicationFiled: September 1, 2012Publication date: July 11, 2013Applicant: Sk HYNIX INC.Inventors: Jong Sam KIM, Jin Hee Cho
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Publication number: 20130081104Abstract: A mobile device management apparatus has a policy storage unit that receives a plurality of security policies, which are classified into a plurality of profiles assigned priorities of activation and in which operating states of functions of a mobile device are defined. A management server supplies the profiles and the security policies to the mobile device. A policy implementation unit selectively activates the profiles so that control of the mobile device functions can be carried out with minimal communication, and also in response to changing events.Type: ApplicationFiled: September 14, 2012Publication date: March 28, 2013Applicant: SAMSUNG SDS CO., LTD.Inventors: Hyun-Woo JUNG, Jong-Sam KIM, Ho-Young SON, Ji-Joong GIL, Jin-Yong KIM
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Publication number: 20130051966Abstract: A loader for a substrate storage container defines a buffer space in which the substrate storage container is temporarily stored between a transfer facility and a semiconductor production facility of a semiconductor production line. The loader includes a load port configured to store the substrate storage container, a buffer port configured to store the substrate storage container, a transfer robot to transfer the substrate storage container within the loader, and a dual entrance sensing device on the transfer robot to determine if the substrate storage container is loaded on the load port and to determine if the substrate storage container is loaded on the buffer port.Type: ApplicationFiled: August 21, 2012Publication date: February 28, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong Sam KIM, Yang-Hyun KIM, Hyun Jae YI
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Patent number: 8253480Abstract: An internal voltage control circuit includes active drivers, a control unit, and a time interval adjustment unit. The active drivers are configured to receive a common internal voltage. The control unit is configured to control respective enable operations of the active drivers. The time interval adjustment unit is configured to respectively supply enable signals, generated by the control unit, to the active drivers at respective predetermined time intervals.Type: GrantFiled: July 2, 2010Date of Patent: August 28, 2012Assignee: Hynix Semiconductor Inc.Inventor: Jong-Sam Kim
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Patent number: 8149639Abstract: A test apparatus includes a test fuse unit for generating a test fuse signal in response to a test mode signal during a test time and generating a test fuse signals according to a fuse cutting after a termination of the test time, a combination signal generating unit for storing a test signal and inactivating a combination signal when the test mode signal is inactivate and for outputting the stored test signal as the combination signal when the test mode signal is activate, and a code signal generating unit for activating a test code signal when one of the test fuse signal and the combination signal is activated.Type: GrantFiled: November 8, 2010Date of Patent: April 3, 2012Assignee: Hynix Semiconductor, Inc.Inventors: Jong-Sam Kim, Kwang-Jun Cho
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Publication number: 20110156807Abstract: An internal voltage control circuit includes active drivers, a control unit, and a time interval adjustment unit. The active drivers are configured to receive a common internal voltage. The control unit is configured to control respective enable operations of the active drivers. The time interval adjustment unit is configured to respectively supply enable signals, generated by the control unit, to the active drivers at respective predetermined time intervals.Type: ApplicationFiled: July 2, 2010Publication date: June 30, 2011Inventor: Jong-Sam KIM
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Publication number: 20110050271Abstract: A test apparatus includes a test fuse unit for generating a test fuse signal in response to a test mode signal during a test time and generating a test fuse signals according to a fuse cutting after a termination of the test time, a combination signal generating unit for storing a test signal and inactivating a combination signal when the test mode signal is inactivate and for outputting the stored test signal as the combination signal when the test mode signal is activate, and a code signal generating unit for activating a test code signal when one of the test fuse signal and the combination signal is activated.Type: ApplicationFiled: November 8, 2010Publication date: March 3, 2011Applicant: HYNIX SEMICONDUCTOR, INC.Inventors: Jong Sam Kim, Kwang Jun Cho
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Patent number: 7847620Abstract: A charge pumping circuit consumes less current by reducing the number of charge pumps operating simultaneously. The charge pumping circuit includes a voltage sensor that detects a level of a high voltage and outputs a control signal based on the detection result. An oscillator provides an oscillating clock signal in response to the control signal of the voltage sensor, and the oscillator sequentially outputs the clock signal as a plurality of clock signals having shifted phases A plurality of high-voltage pumps are disposed in a plurality of regions to pump the high voltage in response to the clock signals and a different phase is designated for each region.Type: GrantFiled: June 10, 2008Date of Patent: December 7, 2010Assignee: Hynix Semiconductor Inc.Inventors: Jong Sam Kim, Jong Chern Lee
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Patent number: RE42592Abstract: A rechargeable battery pack for portable electronic equipment is includes a battery coupled to a charge/discharge circuit and includes a a first substrate for mounting parts positioned on a high-current path and a second substrate for mounting peripheral circuits for controlling a charge/discharge of the battery. Accordingly, heat sensitive parts on low current paths may be thermally isolated from heat generating parts on high current paths.Type: GrantFiled: September 21, 2010Date of Patent: August 2, 2011Assignee: Samsung SDI, Co., LtdInventor: Jong-Sam Kim