Abstract: A storage device includes a printed circuit board (PCB) with attached semiconductor chips, each including a memory, and with at least one wire coupling the semiconductor chips. The storage device includes a case including a first case surrounding a top portion of the printed circuit board and a second case surrounding a bottom portion of the printed circuit board. A sidewall of the first case and a protrusion of the second case form a concavo-convex structure. The sidewall of the first case and the protrusion of the second case cover a side of the printed circuit board.

Abstract: Provided is a time-to-digital converter, comprising a phase frequency detector configured to receive a phase-locked loop input clock and a feedback clock, a ring oscillator configured to perform oscillation with multi-phase clocks of a first period, a counter array configured to count the number of oscillations in which the ring oscillator oscillates in a first period by the number of positive integers during the first pulse width, a multiplexer configured to divide the first period into a plurality of zones using edge information of the multi-phase clocks of the ring oscillator, and selects and outputs voltage information of a plurality of neighboring phase clocks included in a first zone from the plurality of zones, an analog-to-digital converter, a calibrator, and a first adder, wherein the calibrator comprises, an offset lookup table generation circuit, a gain-corrected analog-to-digital conversion output generator, and a second adder.

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

Abstract: A display apparatus includes pixels. Each of the pixels includes a first node controller applying a data voltage to a first node, a second node controller shifting a voltage of a second node from a low level driving voltage to an on pulse voltage, a third node controller applying a reference voltage having an on level to a third node during a first period in one frame and applying the low level driving voltage to the third node during a second period, a driving transistor being on-duty-driven during the first period and off-duty-driven during the second period, and a light emitting device including an anode electrode connected to the second electrode of the driving transistor and a cathode electrode. The light emitting device emits light responsive to a constant current applied from the driving transistor during the first period and does not emit light during the second period.

Abstract: A display panel includes a plurality of pixels. Each of the pixels includes a first transistor having a gate electrode connected to a first node and a first electrode to which a high level driving voltage is applied, a light emitting device having an anode electrode connected to a second electrode of the first transistor and a cathode electrode to which a low level driving voltage is applied, a second transistor applying a fixing voltage to the first node based on a first gate signal, a third transistor applying a data voltage to a second node based on the first gate signal, a fourth transistor connecting the second node to an input terminal for the low level driving voltage based on a second gate signal having a phase opposite to a phase of the first gate signal, and a capacitor between the first node and the second node.

Abstract: Provided herein, in some embodiments, are AFFIMER® polypeptides that binds to the neonatal Fc receptor (FcRn) and extends the half-life of the polypeptides. Also provided herein, in some embodiments, are compositions containing the polypeptides, methods of using the polypeptides, and methods of producing the polypeptides.

Abstract: A semiconductor light emitting device includes a first semiconductor layer, an active layer disposed on the first semiconductor layer to emit ultraviolet light, a second semiconductor layer disposed on the active layer, and a first electrode disposed on the first semiconductor layer and being in Ohmic contact with a portion of the first semiconductor layer, the first electrode including a contact electrode including aluminum (Al) and at least one other material and having a first region adjacent to the first semiconductor layer and a second region, with each region having an Al composition ratio defined by the amount of Al relative to the amount of the at least one other material. The Al composition ratio of the first region is greater than the Al composition ratio of the second region, and a metal layer disposed on the contact electrode.

Abstract: A semiconductor light emitting device includes: a first semiconductor layer; an active layer disposed on the first semiconductor layer to emit ultraviolet light; a second semiconductor layer disposed on the active layer; a contact electrode disposed on the first semiconductor layer; a first electrode including a plurality of metal layers having a first portion and a second portion adjacent to the first portion; and a second electrode disposed on the second semiconductor layer; a first bump disposed on the first electrode and electrically coupled to the first semiconductor layer by the first electrode; and a second bump disposed on the second electrode and electrically coupled to the second semiconductor layer by the second electrode, wherein the first semiconductor layer is formed of AlGaN and has an energy larger than the ultraviolet wavelength energy generated in the active layer, wherein the first portion of the plurality of metal layers is in contact with the contact electrode and the second portion of th

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.

Abstract: A light emitting diode including a light emitting structure including first and second conductive type semiconductor layers and an active layer, first openings and second openings formed through the light emitting structure to expose the first conductive type semiconductor layer, a metal layer electrically connected to the second conductive type semiconductor layer, an electrode layer filling the first and second openings to be electrically connected to the first conductive type semiconductor layer, electrode pads electrically connected to the metal layer, spaced apart along a first direction at first and second corners of the light emitting structure, in which the first openings are arranged along a second direction, and the second openings are arranged along a third direction crossing the first direction, and at least one of the first and second openings filled with the electrode layer is disposed at an intersection of the second and third directions.

Abstract: A light-emitting diode includes a first conductive semiconductor layer, an upper insulating layer positioned on the first conductive semiconductor layer, a mesa including an active layer and a second conductive semiconductor layer and positioned under a certain region of the first conductive semiconductor layer, and first and second through-holes through which the first conductive semiconductor layer is exposed. The first through-holes are arranged in a region encompassed by the edge of the mesa. The second through-holes are arranged along the edge of the mesa so that some of the second through-holes are encompassed by the active layer and the second conductive semiconductor layer, respectively.

Abstract: A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers and an active layer disposed therebetween, a second hole formed through the active layer and the second conductive type semiconductor layer, and exposing the first conductive type semiconductor layer, a reflective metal layer contacting a portion of the light emitting structure, a cover metal layer contacting at least a portion of the reflective metal layer, a first insulation layer covering the reflective metal layer and the cover metal layer, an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the second hole, an electrode pad disposed on the light emitting structure, and a first hole formed through the first conductive type semiconductor layer and corresponding to the cover metal layer, in which the electrode pad overlaps the cover metal layer.

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer disposed on the substrate; a mesa disposed on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer contacting the n-type semiconductor layer; a p-ohmic contact layer contacting the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a plurality of branches, the n-ohmic contact layer surrounds the mesa and is disposed in a region between the branches, each of the n-bump and the p-bump covers an upper surface and a side surface of the mesa, and the p-bump covers at least two of the branches among the plurality of branches. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

Abstract: A variable control method of exhaust temperature increase includes, when a cam phaser, which is connected to a double cam shaft having a coaxial arrangement structure of an outer shaft and an inner shaft, is operated and when a cam angle is determined as being varied by a controller, a cam phaser position change control is performed of decreasing a flow rate of an internal exhaust gas recirculation (EGR) supplied to a cylinder of an engine with a cam advance angle, increasing the flow rate of the EGR with a cam retard angle, or blocking the flow rate of the EGR with a maximal cam advance angle.

Abstract: In an operating method of a radio frequency integrated circuit (RFIC) including a transmission circuit and a reception circuit, the operating method includes receiving, from a modem, first information for setting transmission power of the transmission circuit or second information about a blocker which is a frequency signal unused by the RFIC, obtaining an allowable value of phase noise of a local oscillator included in the transmission circuit, using the first information, obtaining an allowable value of phase noise of a local oscillator included in the reception circuit, using the second information, determining a level of a driving voltage, using the obtained allowable values of the phase noises, and providing the driving voltage to the local oscillators.

Abstract: An ultraviolet light-emitting diode includes: a substrate; an n-type semiconductor layer located on the substrate; a mesa arranged on the n-type semiconductor layer and including an active layer and a p-type semiconductor layer; an n-ohmic contact layer coming in contact with the n-type semiconductor layer; a p-ohmic contact layer coming in contact with the p-type semiconductor layer; an n-bump electrically connected to the n-ohmic contact layer; and a p-bump electrically connected to the p-ohmic contact layer, wherein the mesa includes a main branch and a plurality of sub branches extending from the main branch, the n-ohmic contact layer encompasses the mesa and is interposed in an area between the sub branches, and the n-bump and the p-bump respectively cover the upper part and sides of the mesa. Therefore, an optical output can be increased by reducing light loss, and a forward voltage can be lowered.

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.

Abstract: An OLED display device capable of simplifying the configuration of an external compensation circuit and reducing a compensation time is disclosed. The OLED display device includes a display panel including a pixel, a feedback compensator circuit connected to the pixel through a data line and a sensing line of the display panel, the feedback compensator circuit including an error amplifier configured to receive, through a feedback line, a feedback current flowing into the sensing line and a feedback voltage generated by a sensing resistor, from the pixel during a scan period, compare a data input voltage with the feedback voltage to adjust a data output voltage supplied to the pixel through the data line, and set a target current for driving an OLED element in the pixel, and a precharger configured to precharge the feedback compensator circuit at a front part of the scan period.

Abstract: Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality of bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.