Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.

Abstract: A variable control method of exhaust temperature increase includes, when a cam phaser, which is connected to a double cam shaft having a coaxial arrangement structure of an outer shaft and an inner shaft, is operated and when a cam angle is determined as being varied by a controller, a cam phaser position change control is performed of decreasing a flow rate of an internal exhaust gas recirculation (EGR) supplied to a cylinder of an engine with a cam advance angle, increasing the flow rate of the EGR with a cam retard angle, or blocking the flow rate of the EGR with a maximal cam advance angle.

Abstract: In an operating method of a radio frequency integrated circuit (RFIC) including a transmission circuit and a reception circuit, the operating method includes receiving, from a modem, first information for setting transmission power of the transmission circuit or second information about a blocker which is a frequency signal unused by the RFIC, obtaining an allowable value of phase noise of a local oscillator included in the transmission circuit, using the first information, obtaining an allowable value of phase noise of a local oscillator included in the reception circuit, using the second information, determining a level of a driving voltage, using the obtained allowable values of the phase noises, and providing the driving voltage to the local oscillators.

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.

Abstract: An OLED display device capable of simplifying the configuration of an external compensation circuit and reducing a compensation time is disclosed. The OLED display device includes a display panel including a pixel, a feedback compensator circuit connected to the pixel through a data line and a sensing line of the display panel, the feedback compensator circuit including an error amplifier configured to receive, through a feedback line, a feedback current flowing into the sensing line and a feedback voltage generated by a sensing resistor, from the pixel during a scan period, compare a data input voltage with the feedback voltage to adjust a data output voltage supplied to the pixel through the data line, and set a target current for driving an OLED element in the pixel, and a precharger configured to precharge the feedback compensator circuit at a front part of the scan period.

Abstract: Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality of bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.

Abstract: An organic light-emitting diode (OLED) display can include a display panel including sub-pixels; a deterioration sensing unit configured to sense a deterioration state of the display panel; a power supply configured to output a high voltage for driving the sub-pixels; and a timing controller configured to: receive a deterioration sensing result including information on the deterioration state of the display panel from the deterioration sensing unit, continuously vary the high voltage based on the deterioration sensing result received from the deterioration sensing unit, and provide the varied high voltage to the sub-pixels.

Abstract: A memory device includes a memory cell on a first region of a substrate. An active region is in a second region neighboring the first region of the substrate, and an extension direction of the active region has an acute angle with the <110> direction of the substrate. A transistor serving as a peripheral circuit is on the second region of the substrate. In the memory device, defects or failures due to a crystal defects or a dislocation of the substrate may decrease.

Abstract: A variable control method of exhaust temperature increase includes, when a cam phaser, which is connected to a double cam shaft having a coaxial arrangement structure of an outer shaft and an inner shaft, is operated and when a cam angle is determined as being varied by a controller, a cam phaser position change control is performed of decreasing a flow rate of an internal exhaust gas recirculation (EGR) supplied to a cylinder of an engine with a cam advance angle, increasing the flow rate of the EGR with a cam retard angle, or blocking the flow rate of the EGR with a maximal cam advance angle.

Abstract: Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality of bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

Abstract: An OLED display device capable of preventing luminance deviation caused by a voltage drop of an EVDD is disclosed. The OLED display device generates a reference voltage, a voltage level of which varies with distance from the data driver and supplies the reference voltage to the display panel through the data driver.

Abstract: Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality of bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

Abstract: In an operating method of a radio frequency integrated circuit (RFIC) including a transmission circuit and a reception circuit, the operating method includes receiving, from a modem, first information for setting transmission power of the transmission circuit or second information about a blocker which is a frequency signal unused by the RFIC, obtaining an allowable value of phase noise of a local oscillator included in the transmission circuit, using the first information, obtaining an allowable value of phase noise of a local oscillator included in the reception circuit, using the second information, determining a level of a driving voltage, using the obtained allowable values of the phase noises, and providing the driving voltage to the local oscillators.

Abstract: Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality of bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

Abstract: Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality or bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.

Abstract: A memory device includes a memory cell on a first region of a substrate. An active region is in a second region neighboring the first region of the substrate, and an extension direction of the active region has an acute angle with the <110> direction of the substrate. A transistor serving as a peripheral circuit is on the second region of the substrate. In the memory device, defects or failures due to a crystal defects or a dislocation of the substrate may decrease.

Abstract: A display device performs efficient driving by selectively scanning a peripheral area processed to have low resolution. The display device includes a gate driver that scans a first subset of pixel rows in a first scan block including only the peripheral area during a first frame and a second frame, and respectively scan during the first frame and the second frame a second subset of pixel rows and a third subset of pixel rows in a second scan block including the medial area and the peripheral area excluding the foveal area, and scan pixel rows of pixels in a third scan block including the foveal area, the medial area, and the peripheral area during the first frame and the second frame.

Abstract: The present disclosure relates to a display interface device which can increase display information transmission efficiency and reduce power consumption and EMI, in which a transmission part transmits clock edge information included in a data packet of each channel at a different timing from clock edge information included in data packets of other channels. A reception part detects a clock edge of each channel from the data packet transmitted through each channel, generates an internal clock signal of each channel, synchronized with the detected clock edge, corrects a delay of each channel depending on a result of a logical operation performed on a delayed clock edge of a channel and a clock edge of another channel to further generate an internal clock signal of each channel, and restores the display information from the data packet of each channel using the internal clock signal of each channel.