Abstract: In a device for controlling the temperature of a test sample in a measuring device for measuring material properties of the test sample, comprising a measuring cell for receiving the test sample, at least one temperature controlling element, and a thermal storage element coupled to the temperature controlling element to transfer heat, wherein means are provided for changing the thermal resistance between the thermal storage element and the measuring cell in order to selectively couple or decouple the thermal storage element and the measuring cell in terms of heat transfer, the ratio of the thermal capacity of the thermal storage element to the thermal capacity of the measuring cell is greater than 1:1, preferably at least 2:1, preferably at least 5:1.

Abstract: In a method for measuring the vapor pressure of liquid and solid substances, in which a sample of the substance is arranged in a variable volume of a measuring cell, the measuring cell is gas-tightly closed. The volume of the measuring cell is increased until reaching a measuring volume, and at least one first value of the gas pressure prevailing after the increase in volume is measured. The volume of the measuring cell is additionally reduced until reaching the measuring volume, and at least one second value of the gas pressure prevailing after the reduction of the volume is measured. The vapor pressure is calculated from the at least one first and at least one second measured values.

Abstract: In a method for creating a spark across a spark gap, in particular for igniting a flammable liquid to measure its flash point, by means of a spark generator which comprises an ignition transformer, wherein the spark generator, on the primary side of the ignition transformer, comprises at least one DC voltage source and, on the secondary side of the ignition transformer, comprises two electrodes delimiting the spark gap to be formed, wherein voltage pulses from the DC voltage source are applied to the ignition transformer on the primary side thereof, which voltage pulses generate ignition voltage pulses on the secondary side, the ignition transformer is operated in a first phase according to the flyback converter principle and in a subsequent, second phase according to the forward converter principle.

Abstract: In a method for measuring the vapor pressure of liquid and solid substances, in which a sample of the substance is arranged in a variable volume of a measuring cell, the measuring cell is gas-tightly closed. The volume of the measuring cell is increased until reaching a measuring volume, and at least one first value of the gas pressure prevailing after the increase in volume is measured. The volume of the measuring cell is additionally reduced until reaching the measuring volume, and at least one second value of the gas pressure prevailing after the reduction of the volume is measured. The vapor pressure is calculated from the at least one first and at least one second measured values.

Abstract: In a method for determining the low-temperature properties of a paraffin-containing fuel, the fuel is conducted from a storage chamber through a measuring cell provided with a sieve, the measuring cell is cooled by means of a cooling device, the temperature of the fuel in the measuring cell is measured, and a fluid pressure representing the flow resistance occurring on the sieve is measured, and the temperature occurring at a defined fluid pressure set point is determined and output as a result of the method, wherein, for the pressure measurement, a defined sample amount of the fuel is abruptly delivered from the storage chamber in order to obtain a pressure pulse.

Abstract: A wide band gap semiconductor device includes a first doping region of a first conductivity type and a second doping region of a second conductivity type. A drift portion of the second doping region has a first average net doping concentration lower than 1e17 cm?3. A highly doped portion of the second doping region has a second average net doping concentration higher than 5e18 cm?3. A compensation portion of the second doping region located between the drift and highly doped portions extends from a first area with a net doping concentration higher than 1e16 cm?3 and lower than 1e17 cm?3 to a second area with a net doping concentration higher than 5e18 cm?3. A maximum gradient of the net doping concentration within at least a part of the compensation portion extending from the second area towards the first area for at least 100 nm is lower than 5e22 cm?4.

Abstract: A transistor device includes a first emitter region of a first doping type, a second emitter region of a second doping type, a body of the second doping type, a drift region of the first doping type, a field-stop region of the first doping type, at least one boost structure, and a gate electrode. The boost structure is arranged between the field-stop region and the second emitter region. The at least one boost structure includes a base region of the first doping type and at least one auxiliary emitter region of the second doping type separated from the second emitter region by the base region. An overall dopant dose in the drift region and the field-stop region in a current flow direction of the transistor device is higher than a breakthrough charge of a semiconductor material of the drift region and the field-stop region.

Abstract: A device (2) for the on-demand commutation of an electrical current from a first line branch (14, 3; 36) to another, second line branch (4; 41; 71) is created, which has a number of power semiconductor switching elements (7; 47; 53), which are arranged in series and/or parallel to one another in the second line branch (4; 41; 71), and a control unit (18; 51) for controlling the number of power semiconductor switching elements (7; 47; 53). The control unit (18; 51) is adapted to apply to each of the number of power semiconductor switching elements (7; 47; 53) an increased control voltage (VGE) whose level is above the maximum permissible control voltage specified for continuous operation, in order to switch on or maintain the conduction of the number of power semiconductor switching elements and to cause an increased current flow through it, whose current rating is at least double the nominal operating current.

Abstract: A wide band gap semiconductor device includes a first doping region of a first conductivity type and a second doping region of a second conductivity type. A drift portion of the second doping region has a first average net doping concentration lower than 1e17 cm?3. A highly doped portion of the second doping region has a second average net doping concentration higher than 5e18 cm?3. A compensation portion of the second doping region located between the drift and highly doped portions extends from a first area with a net doping concentration higher than 1e16 cm?3 and lower than 1e17 cm?3 to a second area with a net doping concentration higher than 5e18 cm?3. A maximum gradient of the net doping concentration within at least a part of the compensation portion extending from the second area towards the first area for at least 100 nm is lower than 5e22 cm?4.

Abstract: In a device for controlling the temperature of a test sample in a measuring device for measuring material properties of the test sample, comprising a measuring cell for receiving the test sample, at least one temperature controlling element, and a thermal storage element coupled to the temperature controlling element to transfer heat, wherein means are provided for changing the thermal resistance between the thermal storage element and the measuring cell in order to selectively couple or decouple the thermal storage element and the measuring cell in terms of heat transfer, the ratio of the thermal capacity of the thermal storage element to the thermal capacity of the measuring cell is greater than 1:1, preferably at least 2:1, preferably at least 5:1.

Abstract: In a method for determining the low-temperature properties of a paraffin-containing fuel, the fuel is conducted from a storage chamber through a measuring cell provided with a sieve, the measuring cell is cooled by means of a cooling device, the temperature of the fuel in the measuring cell is measured, and a fluid pressure representing the flow resistance occurring on the sieve is measured, and the temperature occurring at a defined fluid pressure set point is determined and output as a result of the method, wherein, for the pressure measurement, a defined sample amount of the fuel is abruptly delivered from the storage chamber in order to obtain a pressure pulse.

Abstract: A transistor device includes a first emitter region of a first doping type, a second emitter region of a second doping type, a body of the second doping type, a drift region of the first doping type, a field-stop region of the first doping type, at least one boost structure, and a gate electrode. The boost structure is arranged between the field-stop region and the second emitter region. The at least one boost structure includes a base region of the first doping type and at least one auxiliary emitter region of the second doping type separated from the second emitter region by the base region. An overall dopant dose in the drift region and the field-stop region in a current flow direction of the transistor device is higher than a breakthrough charge of a semiconductor material of the drift region and the field-stop region.

Abstract: A description is given of a power semiconductor module 10 which can be transferred from a normal operating mode to an explosion-free robust short-circuit failure mode. Said power semiconductor module 10 comprises a power semiconductor 1 having metallizations 3 which form potential areas and are separated by insulations and passivations on the top side 2 of said power semiconductor. Furthermore, an electrically conductive connecting layer is provided, on which at least one metal shaped body 4 which has a low lateral electrical resistance and is significantly thicker than the connecting layer is arranged, said at least one metal shaped body being applied by sintering of the connecting layer such that said metal shaped body is cohesively connected to the respective potential area.

Abstract: A device (2) for the on-demand commutation of an electrical current from a first line branch (14, 3; 36) to another, second line branch (4; 41; 71) is created, which has a number of power semiconductor switching elements (7; 47; 53), which are arranged in series and/or parallel to one another in the second line branch (4; 41; 71), and a control unit (18; 51) for controlling the number of power semiconductor switching elements (7; 47; 53). The control unit (18; 51) is adapted to apply to each of the number of power semiconductor switching elements (7; 47; 53) an increased control voltage (VGE) whose level is above the maximum permissible control voltage specified for continuous operation, in order to switch on or maintain the conduction of the number of power semiconductor switching elements and to cause an increased current flow through it, whose current rating is at least double the nominal operating current.

Abstract: A power semiconductor device includes a first contact, a second contact, and a semiconductor volume disposed between the first contact and the second contact. The semiconductor volume includes an n-doped field stop layer configured to spatially delimit an electric field that in the semiconductor volume during operation of the power semiconductor device, a heavily p-doped zone and a neighboring heavily n-doped zone, which together form a tunnel diode. The tunnel diode is located in the vicinity of, or adjacent to, or within the field stop layer. The tunnel diode is configured to provide protection against damage to the device due to a rise of an electron flow in an abnormal operating condition, by the fast provision of holes. Further, a method for producing such devices is provided.

Abstract: A power semiconductor device includes a first contact, a second contact, and a semiconductor volume disposed between the first contact and the second contact. The semiconductor volume includes an n-doped field stop layer configured to spatially delimit an electric field that in the semiconductor volume during operation of the power semiconductor device, a heavily p-doped zone and a neighboring heavily n-doped zone, which together form a tunnel diode. The tunnel diode is located in the vicinity of, or adjacent to, or within the field stop layer. The tunnel diode is configured to provide protection against damage to the device due to a rise of an electron flow in an abnormal operating condition, by the fast provision of holes. Further, a method for producing such devices is provided.

Abstract: The invention relates to a vibration damping receptacle device for receiving a motor (1) on a fan housing wall (2) having a motor support element (3) on which a plurality of attachments (4) are formed, a plurality of receptacles (6) disposed directly on the housing wall, and a plurality of elastic damping elements (5) disposed between the attachments and the receptacles such that the axial center axes thereof are each oriented at least in sections in the direction of the motor.

Abstract: A power switching module includes a three-terminal power semiconductor device designed for a rated current and a freewheeling unit. The freewheeling unit includes a pn-diode integrated in a first semiconductor material having a first band-gap, and a Schottky-diode integrated in a second semiconductor material having a second band-gap that is larger than the first band-gap. The Schottky-diode is electrically connected in parallel to the pn-diode.

Abstract: A bipolar semiconductor component includes a semiconductor body having first and second substantially parallel main surfaces and at least one load pn junction, a first metallization on the first surface, a second metallization on the second surface, and a current path running in the semiconductor body from the first metallization to the second metallization only through n-doped zones, including between first and second p-doped zones which are in contact with the first metallization and spaced apart from one another by an n-doped channel zone through which the current path runs. A space charge region forms in the semiconductor body between the first and second p-doped zones to fully deplete the n-doped channel zone between the first and second p-doped zones and therefore prevent current flow between the first and second metallizations along the current path when a positive voltage is applied between the second metallization and the first metallization.

Abstract: A semiconductor component includes a two-sided semiconductor body, an inner zone with a basic doping of a first conduction type, and two semiconductor zones. The first zone, disposed between the first side and inner zone, is of the first conduction type with a doping concentration higher than that of the inner zone. The second zone, disposed between the second side and inner zone, is of a second conduction type complementary to the first type with a doping concentration higher than that of the inner zone. At least one first edge chamfer extends at a first angle to the extension plane of the transition from the second zone to the inner zone at least along the edge of the second zone and inner zone. At least one buried zone of the second conduction type is provided between the first zone and inner zone, and extends substantially parallel to the first zone.