Abstract: A vibrating element (1) for an electroacoustic transducer, particularly for a loudspeaker, is provided, comprising a diaphragm (2) with at least two electrically conductive areas (3a, 3b) separated from each other, and with a recess (4). In the recess (4) a coil (5) is arranged with two connecting leads (6a, 6b), which are electrically contacted with one conductive area each (3a, 3b). The contact points (8a . . . 8d) are then located in the area of the recess (4). Furthermore, a method for the manufacturing of a vibrating element (1) is provided. The recess (4), the inserting of the coil (5) into the recess (4) as well as optionally the contacting of connecting leads (6a, 6b) with the conductive areas (3a, 3b) can then take place in one process step.

Abstract: A generating device (1) for generating a useful stream of a medium (2) comprises at least a medium stream source (14) for generating a high-frequency medium stream (15) and at least a medium stream diode (36, 37) for cooperating with the generated medium stream (15), and at least one medium stream sink (40, 41) for cooperating with the medium stream influenced by the medium stream diodes (36, 37), wherein the at least one medium stream sink (40, 41) suppresses high-frequency stream components in the medium stream such that a useful medium stream (2) in a low-frequency range is obtained.

Abstract: One aspect is a semiconductor component including a terminal zone; a drift zone of a first conduction type, which is doped more weakly than the terminal zone; a component junction between the drift zone and a further component zone; and a charge carrier compensation zone of the first conduction type, which is arranged between the drift zone and the terminal zone and whose doping concentration is lower than that of the terminal zone, and whose doping concentration increases at least in sections in the direction of the terminal zone from a minimum doping concentration to a maximum doping concentration, the minimum doping concentration being more than 1016 cm?3.

Abstract: The invention relates to a semiconductor component comprising a buried temporarily n-doped area (9), which is effective only in the event of turn-off from the conducting to the blocking state of the semiconductor component and prevents chopping of the tail current in order thus to improve the turn-off softness. Said temporarily effective area is created by implantation of K centers (10).

Abstract: A device and method for testing seal tightness of a fuel tank system of a motor vehicle, wherein excess pressure is built up in the fuel tank system by an electrically operated pump and electric current consumption of the pump is compared to reference values in order to determine whether the seal tightness of the fuel tank system is sufficient, and wherein the fuel tank system includes a filler neck with a locking fuel tank cap. A control line is connected in parallel to the power supply line of the pump, the control line being guided across an electric tank cap switch, which assumes a different switch state when the filler neck is closed properly than when it is not closed properly. In at least one of these lines, an electric resistor is installed, which allows a determination of the switch state of the tank cap switch.

Abstract: A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.

Abstract: A device and method for testing seal tightness of a fuel tank system of a motor vehicle, wherein excess pressure is built up in the fuel tank system by an electrically operated pump and electric current consumption of the pump is compared to reference values in order to determine whether the seal tightness of the fuel tank system is sufficient, and wherein the fuel tank system includes a filler neck with a locking fuel tank cap. A control line is connected in parallel to the power supply line of the pump, the control line being guided across an electric tank cap switch, which assumes a different switch state when the filler neck is closed properly than when it is not closed properly. In at least one of these lines, an electric resistor is installed, which allows a determination of the switch state of the tank cap switch.

Abstract: The invention relates to a device (1) for generating a medium stream, having a chamber (4), which chamber (4) comprises chamber walls (2, 3) lying opposite one another and at least one medium opening (27, 28, 29, 30) for the medium stream, which medium stream can be generated in the chamber (4) by means of a diaphragm (5), which diaphragm (5), in an inactive operating state of the device (1), is arranged substantially untensioned in the chamber (4) between the chamber walls (2, 3) lying opposite one another, and associated with which diaphragm (5) is a drive device (6), responsive to electrical drive signals, for driving the diaphragm (5) to deform the same, the drive device (6) being designed to impose a deformation on the diaphragm (5) in an active operating state of the device (1), during which deformation the diaphragm (5) has an inner mechanical tension.

Abstract: A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.

Abstract: A semiconductor diode (1, 1?) has an anode (2), a cathode (3) and a semiconductor volume (7) provided between anode (2) and cathode (3). A plurality of semiconductor zones (81 to 84) are formed in the semiconductor volume (7), which semiconductor zones are inversely doped with respect to their immediate surroundings, spaced apart from one another and provided in the vicinity of the cathode (3). The semiconductor zones are spaced apart from the cathode (3).

Abstract: A fast power diode with a soft switching-time response for use in a commutating branch containing a switchable semiconductor component is formed by at least three successive diffusions with p and n dopants and the heavy metal platinum, and for final incorporation of the parameters necessary for operation, the diode is irradiated with electrons.

Abstract: A freewheeling diode device (10) for a commutation branch includes a first diode (12) with a soft recovery behavior and a second diode (14) with a snappy recovery behavior. The second diode (14) is connected in parallel to the first diode (12).