Abstract: A vibrating element (1) for an electroacoustic transducer, particularly for a loudspeaker, is provided, comprising a diaphragm (2) with at least two electrically conductive areas (3a, 3b) separated from each other, and with a recess (4). In the recess (4) a coil (5) is arranged with two connecting leads (6a, 6b), which are electrically contacted with one conductive area each (3a, 3b). The contact points (8a . . . 8d) are then located in the area of the recess (4). Furthermore, a method for the manufacturing of a vibrating element (1) is provided. The recess (4), the inserting of the coil (5) into the recess (4) as well as optionally the contacting of connecting leads (6a, 6b) with the conductive areas (3a, 3b) can then take place in one process step.

Abstract: An electronic circuit (10) for controlling a capacitive pressure sensor (1), which capacitive pressure sensor (1) comprises a plate electrode capacitor (C) with a capacity that varies in dependence on pressure changes exerted on a deflectable diaphragm (2) forming one plate electrode of the capacitor (C), wherein the electronic circuit (10) comprises a DC voltage source (12) being adapted to generate a DC bias-voltage (UDC) to be applied across the electrodes of the capacitor (C), an AC voltage source (13) being adapted to generate an AC voltage signal (UAC) to be applied across the electrodes of the capacitor (C) and a controller (18) being adapted to receive an output signal (OUT) of the capacitor (C) and to control the DC voltage source (12) such that the DC bias-voltage (UDC) applied to the capacitor (C) adopts a value that maintains the capacity of the capacitor (C) at a desired value.

Abstract: The invention relates to a device for generating a medium stream, having a chamber, which chamber comprises chamber walls lying opposite one another and at least one medium opening for the medium stream, which medium stream can be generated in the chamber by a diaphragm, which diaphragm, in an inactive operating state of the device, is arranged substantially untensioned in the chamber between the chamber walls lying opposite one another, and associated with which diaphragm is a drive device, responsive to electrical drive signals, for driving the diaphragm to deform the same, the drive device being designed to impose a deformation on the diaphragm in an active operating state of the device, during which deformation the diaphragm has an inner mechanical tension.

Abstract: A membrane for an electroacoustic transducer is disclosed having a first area, a second area, which is arranged for translatory movement in relation to said first area, and a third area, which connects said first area and said second area, wherein local, planar spring constants along a closed line within said third area encompassing said second area, are determined in such a way that local, translatory spring constants along said line in a direction of said translatory movement are substantially constant or exclusively have substantially flat, mutual changes.

Abstract: A membrane (2?) for an electroacoustic transducer (1) is disclosed having a first area (A1), a second area (A2), which is arranged for translatory movement in relation to said first area (A1), and a third area (A3), which connects said first (A1) and said second area (A2), wherein local, planar spring constants (psc) along a closed line (L) within said third area (A3) encompassing said second area (A2), are determined in such a way that local, translatory spring constants (tsc) along said line (L) in a direction (DM) of said translatory movement are substantially constant or exclusively have substantially flat, mutual changes.

Abstract: A method of determining the harmonic and anharmonic portions of a response signal (RS) of a device (2), e.g. an electro-acoustic or electric device, comprises the steps of supplying an input signal (IS) to the device (2) causing the device (2) to respond with a response signal (RS), wherein the input signal (IS) is a sinusoidal signal having a continuously increasing or decreasing frequency (f), capturing the response signal (RS), transforming the captured response signal (RS) from the time space into the phase space and analyzing the phase space transformed response signal (TRS) in respect of its harmonic and/or anharmonic portions or establishing reference functions when defining the input signal (IS) and analyzing the response signal (RS) by Fourier transformations carried out by numerical integrations of the reference functions.

Abstract: An acoustic device (500), comprising an oscillatory membrane (501) which comprises a transducing element (503) and a frame (504) adapted for accommodating the membrane (501) in an accommodation plane, wherein the membrane (501) is accommodated in the frame (504) in such a manner that a translational motion of the membrane (501) in at least one direction of the accommodation plane is made possible.

Abstract: An electro-acoustic transducer (1) is disclosed, comprising a substrate (2) that comprises conducting paths (3), a cover (4) attached to said substrate (2) thus forming an inner chamber (A) and a space (B) outside said chamber (A), wherein said cover (4) comprises one or more ports (5). A MEMS sensor (6) of said transducer (1) has at least one hole (7) extending from a first side (C) to a second side (D). A membrane (8) is arranged in said hole (7) transverse to the hole axis (E) thus forming a first hole space (a) and a second hole space (b). The sensor (6) furthermore has electrical connectors (9) designed to carry electrical signals representing sound acting on said membrane (8), which connectors (9) are connected to said conducting paths (3). According to the invention, said MEMS sensor (6) is arranged inside said chamber (A) in such a way that said second hole space (b) is connected to said outside space (B) via said port or ports (5) and said first hole space (a) is connected to said inner chamber (A).

Abstract: A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.

Abstract: A method of assembling a semiconductor device includes providing a chip attached to an elastic carrier, and supporting the elastic carrier with a stiffener. The method additionally includes removing the stiffener from the elastic carrier after attaching the elastic carrier to a board.

Abstract: A membrane for an electroacoustic transducer is disclosed, wherein said membrane (201) comprises a rigid membrane portion (202) having an edge (203); a flexible membrane portion (204) being connected to the rigid membrane portion (202) along the edge (203); wherein an exterior surface (205) of the flexible membrane portion (204) is concave in an idle state of the membrane (201) and shaped such that a change of the curvature of said exterior surface (205) contributes to an air volume shifted by the rigid membrane portion (202) when membrane (201) is excited.

Abstract: A semiconductor device in the form of an IGBT has a front side contact, a rear side contact, and a semiconductor volume disposed between the front side contact and the rear side contact. The semiconductor volume includes a field stop layer for spatially delimiting an electric field that can be formed in the semiconductor volume. The semiconductor volume further includes a plurality of semiconductor zones, the plurality of semiconductor zones spaced apart from each other and each inversely doped with respect to adjacent areas. The plurality of semiconductor zones are located within the field stop layer.

Abstract: The invention relates to a semiconductor component comprising a buried temporarily n-doped area (9), which is effective only in the event of turn-off from the conducting to the blocking state of the semiconductor component and prevents chopping of the tail current in order thus to improve the turn-off softness. Said temporarily effective area is created by implantation of K centers (10).

Abstract: A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.

Abstract: A generating device (1) for generating a useful stream of a medium (2) comprises at least a medium stream source (14) for generating a high-frequency medium stream (15) and at least a medium stream diode (36, 37) for cooperating with the generated medium stream (15), and at least one medium stream sink (40, 41) for cooperating with the medium stream influenced by the medium stream diodes (36, 37), wherein the at least one medium stream sink (40, 41) suppresses high-frequency stream components in the medium stream such that a useful medium stream (2) in a low-frequency range is obtained.

Abstract: A compound membrane (100) for an acoustic device (200), the compound membrane (100) comprising a first layer (101) and a second layer (102), wherein a value of Young's modulus of the second layer (102) does not vary more than essentially 30% in a temperature range between essentially ?20° C. and essentially +85° C.

Abstract: A semiconductor diode has an anode, a cathode and a semiconductor volume provided between anode and cathode. A plurality of semiconductor zones are formed in the semiconductor volume, which semiconductor zones are inversely doped with respect to their immediate surroundings, spaced apart from one another and provided in the vicinity of the cathode. The semiconductor zones are spaced apart from the cathode.

Abstract: The present invention discloses a moving system (3) for a piezoelectric speaker (1), comprising a membrane (4) and a piezoelectric layer (5) attached thereto, wherein a movement of the moving system (3) in a main direction (MD) is substantially caused by dilatation/contraction of the piezoelectric layer (5) transverse to said main direction (MD). Accordingly, there is no translatory movement when exciting the moving system (3), but only a bending movement. To provide an advantageous frequency response of the moving system (3), it is built up asymmetrically with respect to the moving characteristics. Accordingly, the modes are frequency shifted on the one hand and of less influence on the other. Hence, the frequency response of an inventive speaker (1) has less elevations and depressions in the frequency response. The concrete design of a moving system (3) is preferably done by the use of a computer simulation based on a finite elements method.

Abstract: A membrane (2?) for an electroacoustic transducer (1) is disclosed having a first area (A1), a second area (A2), which is arranged for translatory movement in relation to said first area (A1), and a third area (A3), which connects said first (A1) and said second area (A2), wherein local, planar spring constants (psc) along a closed line (L) within said third area (A3) encompassing said second area (A2), are determined in such a way that local, translatory spring constants (tsc) along said line (L) in a direction (DM) of said translatory movement are substantially constant or exclusively have substantially flat, mutual changes.

Abstract: A membrane (2) for a microphone (1) is disclosed which comprises a first portion (A1), a second portion (A2), and elements (E1 . . . E4, E1? . . . E4?), which connect said first (A1) and said second portion (A2). The second portion (A2) is arranged for a movement in relation to said first portion (A1) around an idle position, which movement includes at least a translatory component in a direction of movement (dm) normal to said membrane (2). The elements (E1 . . . E4, E1? . . . E4?) are provided for definition of a spring constant for said movement around said idle position and are arranged substantially along the outer border of said second portion (A2).