Abstract: A semiconductor component includes a two-sided semiconductor body, an inner zone with a basic doping of a first conduction type, and two semiconductor zones. The first zone, disposed between the first side and inner zone, is of the first conduction type with a doping concentration higher than that of the inner zone. The second zone, disposed between the second side and inner zone, is of a second conduction type complementary to the first type with a doping concentration higher than that of the inner zone. At least one first edge chamfer extends at a first angle to the extension plane of the transition from the second zone to the inner zone at least along the edge of the second zone and inner zone. At least one buried zone of the second conduction type is provided between the first zone and inner zone, and extends substantially parallel to the first zone.

Abstract: The invention relates to a vibration damping receptacle device for receiving a motor (1) on a fan housing wall (2) having a motor support element (3) on which a plurality of attachments (4) are formed, a plurality of receptacles (6) disposed directly on the housing wall, and a plurality of elastic damping elements (5) disposed between the attachments and the receptacles such that the axial center axes thereof are each oriented at least in sections in the direction of the motor.

Abstract: A semiconductor component includes a two-sided semiconductor body, an inner zone with a basic doping of a first conduction type, and two semiconductor zones. The first zone, disposed between the first side and inner zone, is of the first conduction type with a doping concentration higher than that of the inner zone. The second zone, disposed between the second side and inner zone, is of a second conduction type complementary to the first type with a doping concentration higher than that of the inner zone. At least one first edge chamfer extends at a first angle to the extension plane of the transition from the second zone to the inner zone at least along the edge of the second zone and inner zone. At least one buried zone of the second conduction type is provided between the first zone and inner zone, and extends substantially parallel to the first zone.

Abstract: A power switching module includes a three-terminal power semiconductor device designed for a rated current and a freewheeling unit. The freewheeling unit includes a pn-diode integrated in a first semiconductor material having a first band-gap, and a Schottky-diode integrated in a second semiconductor material having a second band-gap that is larger than the first band-gap. The Schottky-diode is electrically connected in parallel to the pn-diode.

Abstract: A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.

Abstract: A moving system (3) for a piezoelectric speaker (1) may include a membrane (4) and a piezoelectric layer (5) attached thereto, wherein a movement of the moving system (3) in a main direction (MD) is substantially caused by dilatation/contraction of the piezoelectric layer (5) transverse to the main direction (MD). To provide an advantageous frequency response of the moving system (3), it is built up asymmetrically with respect to the moving characteristics. Accordingly, the modes are frequency shifted on the one hand and of less influence on the other. Hence, the frequency response of an inventive speaker (1) has less elevations and depressions in the frequency response. In a preferred embodiment the local compliance and/or the shape of the moving system (3) is asymmetric with respect to any point in the plane of the moving system (3).

Abstract: An electro-acoustic transducer (1) is disclosed, comprising a substrate (2) that comprises conducting paths (3), a cover (4) attached to said substrate (2) thus forming an inner chamber (A) and a space (B) outside said chamber (A), wherein said cover (4) comprises one or more ports (5). A MEMS sensor (6) of said transducer (1) has at least one hole (7) extending from a first side (C) to a second side (D). A membrane (8) is arranged in said hole (7) transverse to the hole axis (E) thus forming a first hole space (a) and a second hole space (b). The sensor (6) furthermore has electrical connectors (9) designed to carry electrical signals representing sound acting on said membrane (8), which connectors (9) are connected to said conducting paths (3). According to the invention, said MEMS sensor (6) is arranged inside said chamber (A) in such a way that said second hole space (b) is connected to said outside space (B) via said port or ports (5) and said first hole space (a) is connected to said inner chamber (A).

Abstract: An electronic circuit (10) for controlling a capacitive pressure sensor (1), which capacitive pressure sensor (1) comprises a plate electrode capacitor (C) with a capacity that varies in dependence on pressure changes exerted on a deflectable diaphragm (2) forming one plate electrode of the capacitor (C), wherein the electronic circuit (10) comprises a DC voltage source (12) being adapted to generate a DC bias-voltage (UDC) to be applied across the electrodes of the capacitor (C), an AC voltage source (13) being adapted to generate an AC voltage signal (UAC) to be applied across the electrodes of the capacitor (C) and a controller (18) being adapted to receive an output signal (OUT) of the capacitor (C) and to control the DC voltage source (12) such that the DC bias-voltage (UDC) applied to the capacitor (C) adopts a value that maintains the capacity of the capacitor (C) at a desired value.

Abstract: A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.

Abstract: A resilient suspension member for suspending a mass element of a vibration actuator. The suspension member is configured to extend elastically, providing a tensional restoring force, when the mass is displaced. The suspension member is formed of a silicone rubber.

Abstract: A method of determining the harmonic and anharmonic portions of a response signal (RS) of a device (2), e.g. an electro-acoustic or electric device, comprises the steps of supplying an input signal (IS) to the device (2) causing the device (2) to respond with a response signal (RS), wherein the input signal (IS) is a sinusoidal signal having a continuously increasing or decreasing frequency (f), capturing the response signal (RS), transforming the captured response signal (RS) from the time space into the phase space and analyzing the phase space transformed response signal (TRS) in respect of its harmonic and/or anharmonic portions or establishing reference functions when defining the input signal (IS) and analyzing the response signal (RS) by Fourier transformations carried out by numerical integrations of the reference functions.

Abstract: One aspect is a semiconductor component including a terminal zone; a drift zone of a first conduction type, which is doped more weakly than the terminal zone; a component junction between the drift zone and a further component zone; and a charge carrier compensation zone of the first conduction type, which is arranged between the drift zone and the terminal zone and whose doping concentration is lower than that of the terminal zone, and whose doping concentration increases at least in sections in the direction of the terminal zone from a minimum doping concentration to a maximum doping concentration, the minimum doping concentration being more than 1016 cm?3.

Abstract: A compound membrane (100) for an acoustic device (200), the compound membrane (100) comprising a first layer (101) and a second layer (102), wherein a value of Young's modulus of the second layer (102) does not vary more than essentially 30% in a temperature range between essentially ?20° C. and essentially +85° C.

Abstract: An acoustic device (500), comprising an oscillatory membrane (501) which comprises a transducing element (503) and a frame (504) adapted for accommodating the membrane (501) in an accommodation plane, wherein the membrane (501) is accommodated in the frame (504) in such a manner that a translational motion of the membrane (501) in at least one direction of the accommodation plane is made possible.

Abstract: A MEMS transducer (10) for an audio device comprises a substrate (12), a membrane (14) attached to the substrate (12), and a back-electrode (18) attached to the substrate (12), wherein a resonant frequency of the back-electrode (18) is matched to a resonant frequency of the membrane (14). Further, a method of manufacturing a MEMS transducer (19) for an audio device comprises attaching a membrane to a substrate (12), attaching a back-electrode (18) to the substrate (12), matching a resonant frequency of the back-electrode (18) to a resonant frequency of the membrane (14).

Abstract: A bipolar semiconductor component, in particular a diode, comprising an anode structure which controls its emitter efficiency in a manner dependent on the current density in such a way that the emitter efficiency is low at small current densities and sufficiently high at large current densities, and an optional cathode structure, which can inject additional holes during commutation, and production methods therefor.

Abstract: A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone.

Abstract: A membrane (2) for a microphone (1) is disclosed which comprises a first portion (A1), a second portion (A2), and elements (E1 . . . E4, E1? . . . E4?), which connect said first (A1) and said second portion (A2). The second portion (A2) is arranged for a movement in relation to said first portion (A1) around an idle position, which movement includes at least a translatory component in a direction of movement (dm) normal to said membrane (2). The elements (E1 . . . E4, E1? . . . E4?) are provided for definition of a spring constant for said movement around said idle position and are arranged substantially along the outer border of said second portion (A2).

Abstract: A method of assembling a semiconductor device includes providing a chip attached to an elastic carrier, and supporting the elastic carrier with a stiffener. The method additionally includes removing the stiffener from the elastic carrier after attaching the elastic carrier to a board.

Abstract: A membrane for an electroacoustic transducer is disclosed having a first area, a second area, which is arranged for translatory movement in relation to said first area, and a third area, which connects said first area and said second area, wherein local, planar spring constants along a closed line within said third area encompassing said second area, are determined in such a way that local, translatory spring constants along said line in a direction of said translatory movement are substantially constant or exclusively have substantially flat, mutual changes.