Patents by Inventor Joung-Joo Lee

Joung-Joo Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210118729
    Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.
    Type: Application
    Filed: September 29, 2020
    Publication date: April 22, 2021
    Inventors: Shirish PETHE, Fuhong ZHANG, Joung Joo LEE, Rui LI, Xiangjin XIE, Xianmin TANG
  • Patent number: 10950448
    Abstract: Methods and apparatus for control of the quality of films deposited via physical vapor deposition are provided herein. In some embodiments, a method of depositing a film using linear scan physical vapor deposition includes: determining a deposition rate of a material to be deposited on a substrate in a linear scan physical vapor deposition process; calculating a scan rate of the substrate to achieve deposition of the material to a desired thickness in a single pass when deposited at the deposition rate; and performing the linear scan physical vapor deposition process while moving the substrate at the calculated scan rate.
    Type: Grant
    Filed: April 5, 2019
    Date of Patent: March 16, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bencherki Mebarki, Joung Joo Lee, Xianmin Tang
  • Publication number: 20210071294
    Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a physical vapor deposition chamber includes: a body having an interior volume and a lid assembly including a target to be sputtered; a magnetron disposed above the target, wherein the magnetron is configured to rotate a plurality of magnets about a central axis of the physical vapor deposition chamber; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support a substrate; a collimator disposed between the target and the substrate support, the collimator having a central region having a first thickness and a peripheral region having a second thickness less than the first thickness; a first power source coupled to the target to electrically bias the target; and a second power source coupled to the substrate support to electrically bias the substrate support.
    Type: Application
    Filed: November 23, 2020
    Publication date: March 11, 2021
    Inventors: Xiaodong WANG, Joung Joo LEE, Fuhong ZHANG, Martin Lee RIKER, Keith A. MILLER, William FRUCHTERMAN, Rongjun WANG, Adolph Miller ALLEN, Shouyin ZHANG, Xianmin TANG
  • Patent number: 10927450
    Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: February 23, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bencherki Mebarki, Wenhui Wang, Huixiong Dai, Christopher Ngai, Joung Joo Lee, Xianmin Tang
  • Patent number: 10927451
    Abstract: Methods and apparatus for processing a substrate. The method, for example, includes directing a stream of material from a PVD source at a first non-perpendicular angle to selectively deposit the material on a top portion of one or more features on the substrate and form a first overhang and a second overhang extending beyond a third sidewall and a fourth sidewall that are arranged parallel and opposite to each other and at non-zero angles to a first sidewall and a second sidewall, the first sidewall and the second sidewall defining a length of the one or more features, and the third sidewall and fourth sidewall defining a width of the one or more features; performing an etch process to selectively remove some of the first sidewall and the second sidewall while keeping the third sidewall and fourth sidewall in intact and maintaining the width of the one or more features.
    Type: Grant
    Filed: August 15, 2019
    Date of Patent: February 23, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bencherki Mebarki, Byeong Chan Lee, Huixiong Dai, Tejinder Singh, Joung Joo Lee, Xianmin Tang
  • Publication number: 20210020569
    Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.
    Type: Application
    Filed: July 19, 2019
    Publication date: January 21, 2021
    Inventors: SUKETU A. PARIKH, RONG TAO, ROEY SHAVIV, JOUNG JOO LEE, SESHADRI GANGULI, SHIRISH PETHE, DAVID GAGE, JIANSHE TANG, MICHAEL A. STOLFI
  • Patent number: 10815561
    Abstract: Methods and apparatus for asymmetric selective physical vapor deposition (PVD) are provided herein. In some embodiments, a method for physical vapor deposition (PVD) includes providing a stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface, directing the stream of the first material through a first collimator having at least one opening to limit an angular range of first material passing through the at least one opening; depositing the first material only on a top portion and a first sidewall of at least one feature formed on the substrate surface, and linearly scan the substrate through the stream of first material via the substrate support to deposit the first material only on a top portion and a first sidewall of all features formed on the substrate.
    Type: Grant
    Filed: March 7, 2019
    Date of Patent: October 27, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Joung Joo Lee, Bencherki Mebarki, Xianmin Tang, Keith Miller, Sree Rangasai Kesapragada, Sudarsan Srinivasan
  • Publication number: 20200255937
    Abstract: Methods and apparatus for processing a substrate. The method, for example, includes directing a stream of material from a PVD source at a first non-perpendicular angle to selectively deposit the material on a top portion of one or more features on the substrate and form a first overhang and a second overhang extending beyond a third sidewall and a fourth sidewall that are arranged parallel and opposite to each other and at non-zero angles to a first sidewall and a second sidewall, the first sidewall and the second sidewall defining a length of the one or more features, and the third sidewall and fourth sidewall defining a width of the one or more features; performing an etch process to selectively remove some of the first sidewall and the second sidewall while keeping the third sidewall and fourth sidewall in intact and maintaining the width of the one or more features.
    Type: Application
    Filed: August 15, 2019
    Publication date: August 13, 2020
    Inventors: BENCHERKI MEBARKI, BYEONG CHAN LEE, HUIXIONG DAI, TEJINDER SINGH, JOUNG JOO LEE, XIANMIN TANG
  • Publication number: 20200219720
    Abstract: Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.
    Type: Application
    Filed: March 9, 2020
    Publication date: July 9, 2020
    Inventors: BEN-LI SHEU, BENCHERKI MEBARKI, JOUNG JOO LEE, ISMAIL EMESH, ROEY SHAVIV, XIANMIN TANG
  • Publication number: 20200199741
    Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 25, 2020
    Inventors: BENCHERKI MEBARKI, WENHUI WANG, HUIXIONG DAI, CHRISTOPHER NGAI, JOUNG JOO LEE, XIANMIN TANG
  • Publication number: 20200135464
    Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a non-perpendicular angle to the plane of the surface to selectively deposit the material on a top portion of one or more features on the substrate and form an overhang extending beyond a first sidewall of the one or more features; and etching a first layer of the substrate beneath the one or more features selective to the deposited material.
    Type: Application
    Filed: October 30, 2018
    Publication date: April 30, 2020
    Inventors: SREE RANGASAI V. KESAPRAGADA, JONATHAN R. BAKKE, JOUNG JOO LEE, BENCHERKI MEBARKI, CHRISTOPHER NGAI, REGINA FREED, GAURAV THAREJA, TEJINDER SINGH, JORGE PABLO FERNANDEZ
  • Patent number: 10636655
    Abstract: Methods for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.
    Type: Grant
    Filed: March 19, 2018
    Date of Patent: April 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ben-Li Sheu, Bencherki Mebarki, Joung Joo Lee, Ismail Emesh, Roey Shaviv, Xianmin Tang
  • Publication number: 20200051798
    Abstract: Collimator assemblies and process chambers for processing substrates including collimator assemblies are provided herein. In some embodiments, a collimator assembly may include a first cylindrical divider, a second cylindrical divider nested entirely within the first cylindrical divider, and a third cylindrical divider nested entirely within the second cylindrical divider, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant. In some embodiments, a process chamber for processing substrates may include a magnetron source, a target supported by a target backing plate cathode disposed below the magnetron source, and a collimator assembly having a plurality of nested cylindrical dividers, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant.
    Type: Application
    Filed: July 18, 2019
    Publication date: February 13, 2020
    Inventors: BENCHERKI MEBARKI, JOUNG JOO LEE, XIANMIN TANG
  • Publication number: 20190353919
    Abstract: Multi-zone collimators and process chambers including multi-zone collimators for use with a multi-zone magnetron source are provided herein. In some embodiments, a multi-zone collimator for use with a multi-zone magnetron source, comprising a first collimator plate, a second collimator plate, wherein a first collimator zone having a first width is formed between the first collimator plate and the second collimator plate; and a third collimator plate, wherein a second collimator zone having a second width is formed between the second first collimator plate and the third collimator plate, wherein a length of each of the first, second and third collimator plates are different from each other.
    Type: Application
    Filed: May 17, 2019
    Publication date: November 21, 2019
    Inventors: BENCHERKI MEBARKI, JOUNG JOO LEE, FARZAD HOUSHMAND, ANANTHA SUBRAMANI, KEITH MILLER, XIANMIN TANG, PRASHANTH KOTHNUR
  • Publication number: 20190311905
    Abstract: Methods and apparatus for control of the quality of films deposited via physical vapor deposition are provided herein. In some embodiments, a method of depositing a film using linear scan physical vapor deposition includes: determining a deposition rate of a material to be deposited on a substrate in a linear scan physical vapor deposition process; calculating a scan rate of the substrate to achieve deposition of the material to a desired thickness in a single pass when deposited at the deposition rate; and performing the linear scan physical vapor deposition process while moving the substrate at the calculated scan rate.
    Type: Application
    Filed: April 5, 2019
    Publication date: October 10, 2019
    Inventors: Bencherki Mebarki, Joung Joo Lee, Xianmin Tang
  • Publication number: 20190287791
    Abstract: Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.
    Type: Application
    Filed: March 19, 2018
    Publication date: September 19, 2019
    Inventors: BEN-LI SHEU, BENCHERKI MEBARKI, JOUNG JOO LEE, ISMAIL EMESH, ROEY SHAVIV, XIANMIN TANG
  • Publication number: 20190287772
    Abstract: Methods and apparatus for physical vapor deposition (PVD) are provided herein. In some embodiments, a method for PVD includes providing a first stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface and rotating and linearly scanning the substrate through the stream of first material to deposit the first material on all features formed on the substrate, providing a second stream of an ionized dopant species from a dopant source towards the surface of the substrate at a second non-perpendicular angle to the plane of the substrate surface, and implanting the ionized dopant species in the first material deposited only on a top portion and a portion of the first and second sidewalls of all the features on the substrate by rotating and linearly scanning the substrate via the substrate support.
    Type: Application
    Filed: March 13, 2019
    Publication date: September 19, 2019
    Inventors: JOUNG JOO LEE, Bencherki Mebarki, Xianmin Tang, KEITH MILLER, SREE RANGASAI KESAPRAGADA, Sudarsan Srinivasan
  • Publication number: 20190276931
    Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for physical vapor deposition (PVD) includes: a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; and a substrate support having a support surface to support the substrate at a non-perpendicular angle to the linear PVD source, wherein the substrate support and linear PVD source are movable with respect to each other along an axis that is perpendicular to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move over a working surface of the substrate disposed on the substrate support during operation.
    Type: Application
    Filed: March 8, 2019
    Publication date: September 12, 2019
    Inventors: Bencherki Mebarki, Anantha K. Subramani, Joung Joo Lee, Farzad Houshmand, Kelvin Chan, Kenneth Starks, Xianmin Tang
  • Publication number: 20190276929
    Abstract: Methods and apparatus for physical vapor deposition (PVD) are provided herein. In some embodiments, an apparatus includes a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; and a substrate support for supporting the substrate at a non-perpendicular angle to the linear PVD source, and wherein the substrate support and linear PVD source are movable with respect to each other either along a plane of the support surface, or along an axis that is perpendicular to the plane of the support surface, sufficiently to cause the stream of material flux to move completely over a surface of the substrate disposed on the substrate support during operation, wherein the substrate support moves on at least one of a linear slide or shaft that is supported by and travels through a gas-cushioned bearing having an inert gas as a cushioning gas.
    Type: Application
    Filed: March 7, 2019
    Publication date: September 12, 2019
    Inventors: Bencherki Mebarki, Joung Joo Lee, Xianmin Tang
  • Publication number: 20190276926
    Abstract: Methods and apparatus for asymmetric selective physical vapor deposition (PVD) are provided herein. In some embodiments, a method for physical vapor deposition (PVD) includes providing a stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface, directing the stream of the first material through a first collimator having at least one opening to limit an angular range of first material passing through the at least one opening; depositing the first material only on a top portion and a first sidewall of at least one feature formed on the substrate surface, and linearly scan the substrate through the stream of first material via the substrate support to deposit the first material only on a top portion and a first sidewall of all features formed on the substrate.
    Type: Application
    Filed: March 7, 2019
    Publication date: September 12, 2019
    Inventors: Joung Joo Lee, Bencherki Mebarki, Xianmin Tang, Keith Miller, Sree Rangasai Kesapragada, Sudarsan Srinivasan