Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.

Abstract: Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.

Abstract: Methods and apparatus for asymmetric selective physical vapor deposition (PVD) are provided herein. In some embodiments, a method for physical vapor deposition (PVD) includes providing a stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface, directing the stream of the first material through a first collimator having at least one opening to limit an angular range of first material passing through the at least one opening; depositing the first material only on a top portion and a first sidewall of at least one feature formed on the substrate surface, and linearly scan the substrate through the stream of first material via the substrate support to deposit the first material only on a top portion and a first sidewall of all features formed on the substrate.

Abstract: Methods and apparatus for processing a substrate. The method, for example, includes directing a stream of material from a PVD source at a first non-perpendicular angle to selectively deposit the material on a top portion of one or more features on the substrate and form a first overhang and a second overhang extending beyond a third sidewall and a fourth sidewall that are arranged parallel and opposite to each other and at non-zero angles to a first sidewall and a second sidewall, the first sidewall and the second sidewall defining a length of the one or more features, and the third sidewall and fourth sidewall defining a width of the one or more features; performing an etch process to selectively remove some of the first sidewall and the second sidewall while keeping the third sidewall and fourth sidewall in intact and maintaining the width of the one or more features.

Abstract: Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a non-perpendicular angle to the plane of the surface to selectively deposit the material on a top portion of one or more features on the substrate and form an overhang extending beyond a first sidewall of the one or more features; and etching a first layer of the substrate beneath the one or more features selective to the deposited material.

Abstract: Methods for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.

Abstract: Collimator assemblies and process chambers for processing substrates including collimator assemblies are provided herein. In some embodiments, a collimator assembly may include a first cylindrical divider, a second cylindrical divider nested entirely within the first cylindrical divider, and a third cylindrical divider nested entirely within the second cylindrical divider, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant. In some embodiments, a process chamber for processing substrates may include a magnetron source, a target supported by a target backing plate cathode disposed below the magnetron source, and a collimator assembly having a plurality of nested cylindrical dividers, wherein an aspect ratio between a height of the cylindrical dividers and a width between two adjacent cylindrical dividers is maintained constant.

Abstract: Multi-zone collimators and process chambers including multi-zone collimators for use with a multi-zone magnetron source are provided herein. In some embodiments, a multi-zone collimator for use with a multi-zone magnetron source, comprising a first collimator plate, a second collimator plate, wherein a first collimator zone having a first width is formed between the first collimator plate and the second collimator plate; and a third collimator plate, wherein a second collimator zone having a second width is formed between the second first collimator plate and the third collimator plate, wherein a length of each of the first, second and third collimator plates are different from each other.

Abstract: Methods and apparatus for control of the quality of films deposited via physical vapor deposition are provided herein. In some embodiments, a method of depositing a film using linear scan physical vapor deposition includes: determining a deposition rate of a material to be deposited on a substrate in a linear scan physical vapor deposition process; calculating a scan rate of the substrate to achieve deposition of the material to a desired thickness in a single pass when deposited at the deposition rate; and performing the linear scan physical vapor deposition process while moving the substrate at the calculated scan rate.

Abstract: Methods and apparatus for physical vapor deposition (PVD) are provided herein. In some embodiments, a method for PVD includes providing a first stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface and rotating and linearly scanning the substrate through the stream of first material to deposit the first material on all features formed on the substrate, providing a second stream of an ionized dopant species from a dopant source towards the surface of the substrate at a second non-perpendicular angle to the plane of the substrate surface, and implanting the ionized dopant species in the first material deposited only on a top portion and a portion of the first and second sidewalls of all the features on the substrate by rotating and linearly scanning the substrate via the substrate support.

Abstract: Methods and apparatus for asymmetric deposition of a material on a structure formed on a substrate are provided herein. In some embodiments, a method for asymmetric deposition of a material includes forming a plasma from a process gas comprising ionized fluorocarbon (CxFy) particles, depositing an asymmetric fluorocarbon (CxFy) polymer coating on a first sidewall and a bottom portion of an opening formed in a first dielectric layer using angled CxFy ions, depositing a metal, metallic nitride, or metallic oxide on a second sidewall of the opening, and removing the CxFy polymer coating from the first sidewall and the bottom portion of the opening to leave an asymmetric deposition of the metal, metallic nitride, or metallic oxide on the structure.

Abstract: Methods and apparatus for physical vapor deposition (PVD) are provided herein. In some embodiments, an apparatus includes a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; and a substrate support for supporting the substrate at a non-perpendicular angle to the linear PVD source, and wherein the substrate support and linear PVD source are movable with respect to each other either along a plane of the support surface, or along an axis that is perpendicular to the plane of the support surface, sufficiently to cause the stream of material flux to move completely over a surface of the substrate disposed on the substrate support during operation, wherein the substrate support moves on at least one of a linear slide or shaft that is supported by and travels through a gas-cushioned bearing having an inert gas as a cushioning gas.

Abstract: Methods and apparatus for asymmetric selective physical vapor deposition (PVD) are provided herein. In some embodiments, a method for physical vapor deposition (PVD) includes providing a stream of a first material from a first PVD source towards a surface of a substrate at a first non-perpendicular angle to the plane of the substrate surface, directing the stream of the first material through a first collimator having at least one opening to limit an angular range of first material passing through the at least one opening; depositing the first material only on a top portion and a first sidewall of at least one feature formed on the substrate surface, and linearly scan the substrate through the stream of first material via the substrate support to deposit the first material only on a top portion and a first sidewall of all features formed on the substrate.

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for physical vapor deposition (PVD) includes: a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; and a substrate support having a support surface to support the substrate at a non-perpendicular angle to the linear PVD source, wherein the substrate support and linear PVD source are movable with respect to each other along an axis that is perpendicular to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move over a working surface of the substrate disposed on the substrate support during operation.

Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for physical vapor deposition (PVD) includes: a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; and a substrate support having a support surface to support the substrate at a non-perpendicular angle to the stream of material flux, wherein at least one of the substrate support or the linear PVD source are movable in a direction parallel to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move completely over a surface of the substrate, when disposed on the substrate support during operation.

Abstract: Methods and apparatus for filling features with cobalt are provided herein. In some embodiments, a method for processing a substrate includes: depositing a first cobalt layer via a chemical vapor deposition (CVD) process atop a substrate and within a feature disposed in the substrate; and at least partially filling the feature with cobalt or cobalt containing material by performing a plasma process in a physical vapor deposition (PVD) chamber having a cobalt target to reflow a portion of the first cobalt layer into the feature. The PVD chamber may be configured to simultaneously deposit cobalt or cobalt containing material within the feature from a cobalt target disposed in the PVD chamber.

Abstract: Methods for forming a capping protection structure on a metal line layer formed in an insulating material in an interconnection structure are provided. In one embodiment, a method for forming capping protection on a metal line in an interconnection structure for semiconductor devices includes selectively forming a metal silicide layer on a metal line bounded by a dielectric bulk insulating layer in a back end interconnection structure formed on a substrate in a processing chamber; and forming a dielectric layer on the metal silicide layer.

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol to reduce a contaminated surface of the conductive material.