Abstract: Methods of forming a semiconductor device are provided. A method according to the present disclosure includes forming, over a workpiece, a dummy gate stack comprising a first semiconductor material, depositing a first dielectric layer over the dummy gate stack using a first process, implanting the workpiece with a second semiconductor material different from the first semiconductor material, annealing the dummy gate stack after the implanting, and replacing the dummy gate stack with a metal gate stack.

Abstract: A light source structure, a backlight module and a display are provided. The light source structure includes a substrate and plural light source groups. The light source groups are arranged on the substrate, in which each of the light source groups includes plural light-emitting units, and there is a first distance between any two adjacent light-emitting units in each of the light source groups, and there is a second distance between two closest light-emitting units that are respectively in any two adjacent light source groups. The second distance is smaller than the first distance.

Abstract: A method comprises forming a first fin including alternating first channel layers and first sacrificial layers and a second fin including alternating second channel layers and second sacrificial layers, forming a capping layer over the first and the second fin, forming a dummy gate stack over the capping layer, forming source/drain (S/D) features in the first and the second fin, removing the dummy gate stack to form a gate trench, removing the first sacrificial layers and the capping layer over the first fin to form first gaps, removing the capping layer over the second fin and portions of the second sacrificial layers to from second gaps, where remaining portions of the second sacrificial layers and the capping layers form a threshold voltage (Vt) modulation layer, and forming a metal gate stack in the gate trench, the first gaps, and the second gaps.

Abstract: Semiconductor structures and methods of the forming the same are provided. A semiconductor structure according to the present disclosure includes a source feature and a drain feature, an active region between the source feature and the drain feature, a gate structure over the active region, a frontside interconnect structure disposed over the source feature, the drain feature, and the gate structure, a backside interconnect structure disposed below the source feature, the drain feature, and the gate structure, and a storage element disposed in the backside interconnect structure.

Abstract: Methods of forming a semiconductor device are provided. A method according to the present disclosure includes forming, over a workpiece, a dummy gate stack comprising a first semiconductor material, depositing a first dielectric layer over the dummy gate stack using a first process, implanting the workpiece with a second semiconductor material different from the first semiconductor material, annealing the dummy gate stack after the implanting, and replacing the dummy gate stack with a metal gate stack.

Abstract: A magnetic device structure is provided. In some embodiments, the structure includes one or more first transistors, a magnetic device disposed over the one or more first transistors, a plurality of magnetic columns surrounding sides of the one or more first transistors and the magnetic device, a first magnetic layer disposed over the magnetic device and in contact with the plurality of magnetic columns, and a second magnetic layer disposed below the one or more first transistors and in contact with the plurality of magnetic columns.

Abstract: Disclosed herein are related to a memory cell including magnetic tunneling junction (MTJ) devices. In one aspect, the memory cell includes a first layer including a first transistor and a second transistor. In one aspect, the first transistor and the second transistor are connected to each other in a cross-coupled configuration. A first drain structure of the first transistor may be electrically coupled to a first gate structure of the second transistor, and a second drain structure of the second transistor may be electrically coupled to a second gate structure of the first transistor. In one aspect, the memory cell includes a second layer including a first MTJ device electrically coupled to the first drain structure of the first transistor and a second MTJ device electrically coupled to the second drain structure of the second transistor. In one aspect, the second layer is above the first layer.

Abstract: The present disclosure provides semiconductor device and methods of forming the same. A semiconductor device according to the present disclosure includes a gate structure, a source/drain feature adjacent the gate structure, a dielectric layer disclosed over the gate structure and the source/drain feature, a gate contact disposed in the dielectric layer and over the gate structure, and a source/drain contact disposed in the dielectric layer and over the source/drain feature. The dielectric layer is doped with a dopant and the dopant includes germanium or tin.

Abstract: A pet monitoring method and a pet monitoring system according to embodiments of the disclosure are provided. The method is described hereinafter. An image is obtained by a photographic device. At least one of an exercise status detection, an excretion status detection and a danger status detection of a pet is performed according to the image. Pet management information is presented on a management interface of a remote device according to a detection result.

Abstract: Disclosed herein are related to a memory cell including magnetic tunneling junction (MTJ) devices. In one aspect, the memory cell includes a first layer including a first transistor and a second transistor. In one aspect, the first transistor and the second transistor are connected to each other in a cross-coupled configuration. A first drain structure of the first transistor may be electrically coupled to a first gate structure of the second transistor, and a second drain structure of the second transistor may be electrically coupled to a second gate structure of the first transistor. In one aspect, the memory cell includes a second layer including a first MTJ device electrically coupled to the first drain structure of the first transistor and a second MTJ device electrically coupled to the second drain structure of the second transistor. In one aspect, the second layer is above the first layer.

Abstract: The disclosure provides a display driving device and an operation method thereof. The display driving device includes a timing controller circuit and a driving circuit. The timing controller circuit performs oblique filter processing on an original image frame by an oblique filter with an oblique filter mask matrix to generate a processed image frame. The oblique filter comprises an oblique high-pass filter or a smoothing filter. Original pixel data of a current pixel in the original image frame is replaced with new pixel data when the oblique filter mask matrix is configured for the current pixel. The driving circuit drives a display panel module according to the processed image frame. The display panel module includes a tilt lenticular lens layer having a first tilt angle. A second tilt angle of the oblique filter mask matrix of the oblique filter processing corresponds to the first tilt angle.

Abstract: The present disclosure provides semiconductor device and methods of forming the same. A semiconductor device according to the present disclosure includes a gate structure, a source/drain feature adjacent the gate structure, a dielectric layer disclosed over the gate structure and the source/drain feature, a gate contact disposed in the dielectric layer and over the gate structure, and a source/drain contact disposed in the dielectric layer and over the source/drain feature. The dielectric layer is doped with a dopant and the dopant includes germanium or tin.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: A light source structure, a backlight module and a display device are described, in which the light source structure includes a substrate, plural partition walls, plural light-emitting units and plural package structures. The plural partition walls are disposed on the substrate so as to form plural accommodating spaces. The light-emitting units are disposed on the substrate and are located in the accommodating spaces. The package structures are filled in the accommodating spaces and cover the light-emitting units. A height of each package structure is smaller or equal to a height of each partition wall, and the height of each of the package structures which is located near a side portion of the substrate is smaller than the heights of the partition walls which are located near a center portion of the substrate.

Abstract: The disclosure provides a display driving device and an operation method thereof. The display driving device includes a timing controller circuit and a driving circuit. The timing controller circuit performs oblique filter processing on an original image frame to generate a processed image frame. The driving circuit is coupled to the timing controller circuit to receive the processed image frame. The driving circuit drives a display panel module according to the processed image frame. The display panel module includes a tilt lenticular lens layer having a first tilt angle. A second tilt angle of a filter mask of the oblique filter processing corresponds to the first tilt angle.

Abstract: A light source structure, a backlight module and a display are provided. The light source structure includes a substrate and plural light source groups. The light source groups are arranged on the substrate, in which each of the light source groups includes plural light-emitting units, and there is a first distance between any two adjacent light-emitting units in each of the light source groups, and there is a second distance between two closest light-emitting units that are respectively in any two adjacent light source groups. The second distance is smaller than the first distance.

Abstract: A microfluidic device and a microfluidic chip are provided. The microfluidic device includes the microfluidic chip, a pouring element, a flow adjustment element and a processor. The microfluidic chip includes a sorting assembly, a sample outlet channel, a pouring channel, a collection channel and a waste channel. The sorting assembly includes a sample inlet channel and a sorting chamber. The pouring element is connected to the pouring channel. The flow adjustment element is connected to a distal end of the sample outlet channel. The processor is configured to control the pouring element to pour a guiding fluid into the pouring channel entering the sample outlet channel and control the flow adjustment element to adjust a flow resistance of a drain section of the sample outlet channel.

Abstract: The present disclosure provides semiconductor device and methods of forming the same. A semiconductor device according to the present disclosure includes a gate structure, a source/drain feature adjacent the gate structure, a dielectric layer disclosed over the gate structure and the source/drain feature, a gate contact disposed in the dielectric layer and over the gate structure, and a source/drain contact disposed in the dielectric layer and over the source/drain feature. The dielectric layer is doped with a dopant and the dopant includes germanium or tin.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: A light source structure, a backlight module and a display are provided. The light source structure includes a substrate and plural light source groups. The light source groups are arranged on the substrate, in which each of the light source groups includes plural light-emitting units, and there is a first distance between any two adjacent light-emitting units in each of the light source groups, and there is a second distance between two closest light-emitting units that are respectively in any two adjacent light source groups. The second distance is smaller than the first distance.