Abstract: A method comprises applying a metal-paste printing process to a surface-mount device to form a metal pillar, placing a first semiconductor die adjacent to the surface-mount device, forming a molding compound layer over the first semiconductor die and the surface-mount device, grinding the molding compound layer until a top surface of the first semiconductor die is exposed and forming a plurality of interconnect structures over the molding compound layer.

Abstract: Some embodiments relate to a semiconductor package. The semiconductor package includes a redistribution layer (RDL) including a first metal layer and a second metal layer. The second metal layer is stacked over the first metal layer and is coupled to the first metal layer through a via. A first semiconductor die is disposed over the RDL. The first semiconductor die includes a plurality of contact pads electrically coupled to the RDL, and the RDL enables fan-out connection of the first semiconductor die. A second semiconductor die is disposed over the first semiconductor die and over the RDL. The second semiconductor die is bonded to the RDL by a plurality of conductive bump structures.

Abstract: Methods of packaging semiconductor devices and structures thereof are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a carrier wafer, providing a plurality of dies, and forming a die cave material over the carrier wafer. A plurality of die caves is formed in the die cave material. At least one of the plurality of dies is placed within each of the plurality of die caves in the die cave material. A plurality of packages is formed, each of the plurality of packages being formed over a respective at least one of the plurality of dies.

Abstract: An interconnect structure and a method of forming an interconnect structure are provided. The interconnect structure is formed over a carrier substrate, upon which a die may also be attached. Upon removal of the carrier substrate and singulation, a first package is formed. A second package may be attached to the first package, wherein the second package may be electrically coupled to through vias formed in the first package.

Abstract: Various embodiments of mechanisms for forming through package vias (TPVs) with multiple conductive layers and/or recesses in a die package and a package on package (PoP) device with bonding structures utilizing the TPVs are provided. One of the multiple conductive layers acts as a protective layer of the main conductive layer of the TPVs. The protective layer is less likely to oxidize and also has a slower formation rate of intermetallic compound (IMC) when exposed to solder. The recesses in TPVs of a die package are filled by solder from the other die package and the IMC layer formed is below the surface of TPVs, which strengthen the bonding structures.

Abstract: A package includes a die having a conductive pad at a top surface of the die, a stud bump over and connected to the conductive pad, and a redistribution line over and connected to the stud bump. An electrical connector is over and electrically coupled to the redistribution line.

Abstract: The present disclosure provides a method for manufacturing a semiconductor package. The method includes providing a carrier, forming a semiconductor die layer over the carrier, and exposing the conductive contact from a close end of the insulating layer by an etching operation. Forming the semiconductor die layer includes forming an insulating layer over the carrier, forming a trench having a close end and an open end in the insulating layer, forming a conductive contact in the trench, and placing a semiconductor die over the insulating layer.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die and a package layer partially or completely encapsulating the semiconductor die. The chip package also includes a conductive feature penetrating through the package layer. The chip package further includes an interfacial layer the interfacial layer continuously surrounds the conductive feature. The interfacial layer is between the conductive feature and the package layer, and the interfacial layer is made of a metal oxide material.

Abstract: A system and method for packaging semiconductor device is provided. An embodiment comprises forming vias over a carrier wafer and attaching a first die over the carrier wafer and between a first two of the vias. A second die is attached over the carrier wafer and between a second two of the vias. The first die and the second die are encapsulated to form a first package, and at least one third die is connected to the first die or the second die. A second package is connected to the first package over the at least one third die.

Abstract: A device comprises a first semiconductor die embedded in a molding compound layer, a surface-mount device embedded in the molding compound layer, a plurality of interconnect structures formed on the molding compound layer, wherein the first semiconductor die is electrically coupled to the interconnect structures and the surface-mount device is electrically coupled to the interconnect structures through at least a metal pillar and a plurality of bumps formed on and electrically coupled to the interconnect structures.

Abstract: A package includes a die having a conductive pad at a top surface of the die, a stud bump over and connected to the conductive pad, and a redistribution line over and connected to the stud bump. An electrical connector is over and electrically coupled to the redistribution line.

Abstract: Methods of packaging semiconductor devices and structures thereof are disclosed. In one embodiment, a method of packaging a semiconductor device includes providing a carrier wafer, providing a plurality of dies, and forming a die cave material over the carrier wafer. A plurality of die caves is formed in the die cave material. At least one of the plurality of dies is placed within each of the plurality of die caves in the die cave material. A plurality of packages is formed, each of the plurality of packages being formed over a respective at least one of the plurality of dies.

Abstract: A method of manufacturing a structure includes: providing a substrate; forming an adhesive layer over the substrate; forming an interconnect layer comprising a metal line and a metal via over the adhesive layer; forming a plurality of conductive pads over the interconnect layer; forming conductive pillars over the interconnect layer; disposing a first semiconductor die over the conductive pads, the first semiconductor die being spaced apart from the conductive pillars; bonding a second semiconductor die with the conductive pillars; and removing the substrate and the adhesive layer to expose a conductive portion of the interconnect layer.

Abstract: A semiconductor package structure includes an encapsulant, a first chip, a second chip, a first redistribution layer and a second redistribution layer. The encapsulant has a first surface and a second surface opposite to each other. The first chip is in the encapsulant, wherein the first chip includes a plurality of contact pads exposed from the first surface of the encapsulant. The second chip is in the encapsulant, wherein second chip includes a plurality of contact pads exposed from the second surface of the encapsulant. The first redistribution layer is over the first surface of the encapsulant and electrically connected to the contact pads of the first chip. The second redistribution layer is over the second surface of the encapsulant and electrically connected to the contact pads of the second chip.

Abstract: A package includes a chip that has a metal-insulator-metal (MIM) capacitor formed in a first polymer layer and a metallic pillar formed on the MIM capacitor. A molding compound surrounds the chip, a second polymer layer is formed on the chip and the molding compound, a third polymer layer is formed on the second polymer layer, an interconnect structure is formed between the second polymer layer and the third polymer layer and electrically coupled to the metallic pillar and the MIM capacitor, and a bump is formed over and electrically coupled to the interconnect structure.

Abstract: The present disclosure provides a semiconductor package, including a first layer, a second layer, and a conductive array. The first layer includes a packaged die having a carrier surface and a molding surface, and a first die structure in proximity to the carrier surface. An active region of the first die structure is electrically coupled to the packaged die through a solder. The second layer includes a second die structure, the second die structure being connected to the active region of the first die structure by a first redistributed layer (RDL). The conductive array is connected to an active region of the second die structure by a second RDL. The present disclosure also provides a method for manufacturing the aforesaid semiconductor package.

Abstract: A method of making a semiconductor device is provided including forming a first opening and a second opening in a first surface of a substrate. A conductive material is formed in the first opening and in the second opening and over the first surface in the first region of the substrate between the openings. A thickness of the substrate may be reduced from a second surface of the substrate, opposite the first surface, to a third surface opposite the first surface which exposes the conductive material in the first opening and the conductive material in the second opening. A light emitting diode (LED) device is connected to the third surface of the substrate.

Abstract: A package includes a first die and a second die. The first die includes a first substrate and a first metal pad overlying the first substrate. The second die includes a second substrate and a second metal pad overlying the second substrate. A molding compound molds the first die and the second die therein. The molding compound has a first portion between the first die and the second die, and a second portion, which may form a ring encircles the first portion. The first portion and the second portion are on opposite sides of the first die. The first portion has a first top surface. The second portion has a second top surface higher than the first top surface.

Abstract: A packaged semiconductor device includes a substrate and a contact pad disposed on the semiconductor substrate. The packaged semiconductor device also includes a dielectric layer disposed over the contact pad, the dielectric layer including a first opening over the contact pad, and an insulator layer disposed over the dielectric layer, the insulator layer including a second opening over the contact pad. The packaged semiconductor device also includes a molding material disposed around the substrate, the dielectric layer, and the insulator layer and a wiring over the insulator layer and extending through the second opening, the wiring being electrically coupled to the contact pad.

Abstract: A method of manufacturing a semiconductor structure includes disposing a plurality of devices on a carrier; immersing the plurality of devices into a molding compound to dispose the molding compound between the plurality of devices; and removing the carrier from the plurality of devices and the molding compound, wherein a first surface of the molding compound adjacent to a plurality of active components over the plurality of devices includes a recessed portion recessed from one of first surfaces of the plurality of devices.