Abstract: Semiconductor structures and methods of forming the same are provided. In an embodiment, a method includes forming a first antenna coupled to a gate structure of a transistor, the first antenna comprising a first metal line, forming a second antenna coupled to a source/drain feature of the transistor, the second antenna comprising a second metal line, wherein the first metal line and the second metal line are disposed within a same metallization layer, forming a dielectric layer over the metallization layer, performing a plasma etching process to the dielectric layer, thereby forming first trenches exposing the first metal line and second trenches exposing the second metal line, respectively, wherein the first trenches and second trenches are formed in a chronological order, and forming first and second conductive vias in the first trenches and second trenches, respectively.

Abstract: The present invention provides a method for constructing a threonine-producing engineered bacterium. According to the present invention, a 2-methylcitrate synthase 1-inactivated strain (Corynebacterium) is applied to the production of threonine, and the production of threonine produced by the 2-methylcitrate synthase 1-inactivated strain is increased by about 42% compared with that produced by an unengineered strain. When the application of the 2-methylcitrate synthase 1-inactivated strain is further combined with enhanced expression of at least one of aspartate aminotransferase, aspartate kinase, homoserine dehydrogenase, threonine synthase, NAD kinase, fructose-1,6-bisphosphatase 2 and the like in the threonine synthesis pathway, the production of threonine is improved. The method provides a new way for large-scale production of threonine and has high application value.

Abstract: The present disclosure provides a method and a system for testing semiconductor device. The method includes the following operations: energizing an integrated circuit (IC) on a wafer by raising a voltage of the IC to a first voltage level during a first period, and applying to the IC a stress signal including a first sequence and a second sequence during a second period subsequent to the first period, each of the first sequence and the second sequence having a ramp-up stage and a ramp-down stage. The stress signal causes the voltage of the IC to fluctuate between a second voltage level and a third voltage level, wherein a duration of the first sequence is longer than that of the second sequence.

Abstract: The present invention relates to the technical field of microbial engineering. Specifically disclosed are a recombinant microorganism, a method for constructing same and use thereof. According to the present invention, by means of constructing a phosphate acetyltransferase-inactivated strain and applying the strain to the production of threonine, the threonine-producing ability of the strain is remarkably improved, and the strain has a remarkably increased production of threonine as compared to an unmodified strain. Combined with attenuated expression or inactivation of acetate kinase, HTH-type transcriptional regulator and the like, as well as improved activity of pyruvate carboxylase and enzymes involved in a threonine synthesis-related pathway, the production of threonine is further improved. The described modifications can be used in the fermentative production of threonine and have relatively good application value.

Abstract: The present disclosure relates to the preparation of a highly pure cannabidiol compound by a novel synthesis route. The cannabidiol compound can be prepared by an acid-catalyzed reaction of a di-halo olivetol with menthadienol, followed by two crystallization steps. The highly pure cannabidiol compound is produced in high yield, stereospecificity, or both, and shows exceedingly low levels of ?-9-tetrahydrocannabinol at the time of preparation and after storage.

Abstract: Protection from electrostatic discharge (ESD) events is provided by forming leading points of discharge (LPoD) structures on a semiconductor die or on a composite die. The LPoD structures may comprise an upper protrusion portion on an ESD path metal structure, intermediate metallic material portions, solder material portions having a greater height than normal solder material portions that are not provided with ESD protection, or a elongated metal bar structure. The LPoD structures may be used for anisotropic etch process for forming via cavities, bonding processes using solder material portions, bonding processes using metal-to-metal bonding, and/or solder ball attachment processes.

Abstract: Systems, methods, and software for a Radio Access Network (RAN). In one embodiment, a system identifies a plurality of cells within the RAN, and groups the cells into cell groups. The system performs a training process to train group Machine-Learning (ML) models for the cell groups based on training data for the cell groups, and evaluates a performance of the group ML models for the cell groups based on evaluation data for the cell groups. The system provides the group ML models for the cell groups to a RAN management system or the like when the performance of the group ML models satisfies a performance threshold.

Abstract: A method of scheduling input/output operations for a storage system including determining a deadline for a storage operation, wherein the deadline is dependent on an expected latency of the storage operation; adding the storage operation to a queue of storage operations; and reordering the queue dependent upon the deadline of the storage operation and one or more deadlines of one or more storage operations in the queue of storage operations.

Abstract: Systems and methods for pre-deployment user journey evaluation are described. Embodiments are configured to obtain a user journey including a plurality of touchpoints; generate a simulation agent including a plurality of attributes; generate a probability score for the simulation agent for each of the plurality of touchpoints based on the plurality of attributes using a machine learning model; perform a simulation of the user journey based on the probability score; and generate a text describing the user journey based on the simulation.

Abstract: A semiconductor structure, a method for manufacturing a FinFET structure and a method for manufacturing a semiconductor structure are provided. The method for forming a FinFET structure includes: providing a FinFET precursor including a plurality of fins and a plurality of gate trenches between the fins; forming a first portion of the trench dummy of a dummy gate within the plurality of gate trenches; removing at least a part of the first portion of the trench dummy; forming a second portion of the trench dummy over the first portion of the trench dummy; performing a first thermal treatment to the first and second portions of the trench dummy; and forming a blanket dummy of the dummy gate over the second portion of the trench dummy. The present disclosure further provides a FinFET structure with an improved metal gate.

Abstract: A semiconductor structure includes a first device and a second device bonded on the first device. The first device has a first sidewall distal to the second device and a second sidewall proximal to the second device. A surface roughness of the second sidewall is larger than a surface roughness of the first sidewall. The second device has a third sidewall proximal to the first device and a fourth sidewall distal to the first device. A surface roughness of the fourth sidewall is larger than a surface roughness of the third sidewall.

Abstract: Methods and systems are provided for improved electronic communication campaign technologies, which can automatically balance objectives or goals of an electronic communication campaign against an overall opt-out rate for the electronic communication campaign. An electronic communications frequency optimizer can generate individual contact frequencies for individual email recipients. Embodiments can avoid unnecessary or counterproductive communications while achieving overall campaign goals, and can use processes to improve the efficiency of systems. In some cases, embodiments cluster communication recipients into different groups based on their past actions, then optimizes the communication contact frequency on different groups, to avoid performing optimization directly on millions of recipients. Some embodiments automatically self-update, for example with recipients' recent responses, to generate and/or implement campaign communication schedules on an individual level.

Abstract: The present disclosure describes techniques of storing and accessing multimedia files. The techniques comprise obtaining at least two multimedia files; performing format parsing for each of the at least two multimedia files separately to obtain audio encoding data, video encoding data, and container format data of each of the at least two multimedia files; storing the container format data of each of the at least two multimedia files separately, and storing one copy of the audio encoding data and video encoding data; and generating and storing index data comprising information of identifying encoding offset of the container format data, the audio encoding data, and the video encoding data in each of the at least two multimedia files, and comprising information indicative of storage address of the container format data, the audio encoding data, and the video encoding data of each of the at least two multimedia files.

Abstract: Provided are tuning circuit and communication device. The tuning circuit includes tuning switch, ground patch point, and at least two sets of patch units. Each set of patch units at least includes a first patch point and a second patch point; the tuning switch comprises a standard port and at least one conversion port, and each set of patch units is connected to the corresponding conversion port; a first end of a first patch point and a first end of a second patch point in the same set of patch units are connected to the same conversion port; second ends of first patch points in different patch units are respectively connected to different contact points of an antenna; the second ends of all the second patch points are connected to the ground; and both ends of the ground patch point are respectively connected to the standard port and the ground.

Abstract: The present disclosure provides use of lysophosphatidic acid (LPA) as a feed additive in controlling porcine infectious diarrhea, and belongs to the technical field of feed nutrition. The LPA is a type of lipid substance that is produced endogenously in vivo and can reduce a large secretion level of intestinal fluid in piglets caused by Escherichia coli infection via inhibiting cystic fibrosis transmembrane-conductance regulator (CFTR)-dependent iodine efflux. In this way, a susceptibility of weaned piglets to the Escherichia coli is prevented to effectively maintain the intestinal health of piglets. LPA is an endogenous substance in vivo, and it is first discovered that adding the LPA into a feed can control Escherichia coli-caused infectious diarrhea in the piglets.

Abstract: An injection mould and an injection moulding method are provided. The injection mould includes: a base plate, configured to place a package chip to be injection-moulded, the package chip including a substrate and at least one chip fixed on a surface of the substrate by a flip chip process, the substrate having a through hole, a glue injection channel being formed in the base plate and configured to inject a moulding compound, and the glue injection channel being connected with the through hole on the substrate. The above-mentioned injection mould can improve the reliability of the package chip after injection moulding.

Abstract: A semiconductor structure, a method for manufacturing a FinFET structure and a method for manufacturing a semiconductor structure are provided. The method for forming a FinFET structure includes: providing a FinFET precursor including a plurality of fins and a plurality of gate trenches between the fins; forming a first portion of the trench dummy of a dummy gate within the plurality of gate trenches; removing at least a part of the first portion of the trench dummy; forming a second portion of the trench dummy over the first portion of the trench dummy; performing a first thermal treatment to the first and second portions of the trench dummy; and forming a blanket dummy of the dummy gate over the second portion of the trench dummy. The present disclosure further provides a FinFET structure with an improved metal gate.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a metal line over a first substrate, a second substrate over the metal line, and a through-via penetrating through the second substrate and landing on the metal line. The through-via includes a copper fill having at least 85% (111) crystal orientation. The through-via includes a top portion with a first top width over a bottom portion with a second top width that is smaller than the first top width, and the top portion includes a first bulk portion over a first footing feature. The first bulk portion has first sidewalls, the first footing feature has second sidewalls, and the second sidewalls slant inwards from the first sidewalls to narrow the through-via from the first top width of the top portion to the second top width of the bottom portion.

Abstract: A method includes receiving a first wafer having a first device layer on a first semiconductor substrate, receiving a second wafer having a second device layer on a second semiconductor substrate, forming a first groove along a first scribing channel of the first wafer with a non-mechanical cutting process, and forming a second groove along a second scribing channel of the second wafer with the non-mechanical cutting process. The method further includes after the forming of the first and second grooves, bonding the first and second wafers together, and dicing the bonded first and second wafers through the first and second grooves with a mechanical cutting process.