Abstract: The present disclosure relates to systems, methods, and non-transitory computer readable media that utilize machine learning to generate subject lines from subject line keywords. In one or more embodiments, the disclosed systems receive, from a client device, one or more subject line keywords. Additionally, the disclosed systems generate, utilizing a subject generation machine-learning model having learned parameters, a subject line by selecting one or more words for the subject line from a word distribution based on the one or more subject line keywords. The disclosed systems further provide, for display on the client device, the subject line.

Abstract: A power transfer system to facilitate the transfer of electrical power between tree trunk sections of an artificial tree is disclosed. The power transfer system can advantageously enable neighboring tree trunk sections to be electrically connected without the need to rotationally align the tree trunk sections. Power distribution subsystems can be disposed within the trunk sections. The power distribution subsystems can comprise a male end, a female end, or both. The male ends can have prongs and the female ends can have voids. The prongs can be inserted into the voids to electrically connect the power distribution subsystems of neighboring tree trunk sections. In some embodiments, the prongs and voids are designed so that the prongs of one power distribution subsystem can engage the voids of another power distribution subsystem without the need to rotationally align the tree trunk sections.

Abstract: Systems and methods for customer journey optimization in email marketing are described. The systems and methods may identify a plurality of messages for a first time period, wherein the plurality of messages are categorized according to a plurality of messages types, identify user information for a customer, wherein the user information includes user interaction data, determine a message type from the plurality of message types for the first time period based on the user information, wherein the message type is determined using a decision making model comprising a deep Q-learning neural network, select a message from the plurality of messages based on the determined message type, and transmit the message to the customer during the first time period based on the selection.

Abstract: The present disclosure provides a bimetallic coordination metal-organic framework material, a preparing method thereof, and an application thereof. In the bimetallic coordination metal-organic framework material, carboxyl groups and soft groups of ligands are coordinated with coordination metal ions to assemble a structure having space and functions divided into covalent charge carrier layers and charge storage ion layers. Further, through the conjugation effect, the bimetallic coordination metal-organic framework material has unique electromagnetic properties, good electrical conductivity, and magnetic coupling performance. Thus, the bimetallic coordination metal-organic framework material is used as superconducting materials, conductive materials, semiconductor materials, or electromagnetic materials.

Abstract: Provided by a bandpass filter circuit and a multiplexer. The bandpass filter circuit includes at least one electromagnetic LC filter circuit and at least one acoustic wave resonance unit. The at least one acoustic wave resonance unit includes an input port, an output port, at least one circuit element and at least three resonators. The at least one electromagnetic LC filter circuit is electrically connected to the at least one acoustic wave resonance unit, and the at least three resonators include at least one first resonator and at least one second resonator. In a case where the at least one first resonator includes one first resonator, the first resonator is connected in series between the input port and the output port.

Abstract: The sense amplifier includes: an amplification module configured to amplify a voltage transmitted by a bit line or a reference bit line, when the sense amplifier is at an amplification stage; a first switch module configured to control the amplification module to be disconnected from the reference bit line, when the sense amplifier performs a read operation for the bit line and is at the amplification stage. In the disclosure, the power consumption of the sense amplifier may be reduced.

Abstract: The disclosure provides a Sense Amplifier (SA), a memory and a method for controlling the SA, and relates to the technical field of semiconductor memories. The SA includes: an amplifier module; an offset voltage storage unit electrically connected to the amplifier module and configured to store an offset voltage of the amplifier module in an offset elimination stage of the SA; and a load compensation unit electrically connected to the amplifier module and configured to compensate a difference between loads of the amplifier module in an amplification stage of the SA. The disclosure may improve an accuracy of reading data of the SA.

Abstract: A sense amplifier, a memory and a method for controlling the sense amplifier are provided. The sense amplifier includes: an amplification module, arranged to read data in a memory cell; and a control module, electrically connected to the amplification module. In a first offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a first inverter and a second inverter, and each of the first inverter and the second inverter is an inverter an input terminal and an output terminal connected to each other; and in a second offset compensation stage of the sense amplifier, the control module is arranged to configure the amplification module to include a current mirror structure.

Abstract: Embodiments of this application provide a method and system for adjusting a memory, and a semiconductor device. The method for adjusting a memory includes: acquiring a mapping relationship among a temperature of a transistor, a substrate bias voltage of a sense amplification transistor in a sense amplifier, and an actual data writing time of the memory; acquiring a current temperature of the transistor; and adjusting the substrate bias voltage on the basis of the current temperature and the mapping relationship, such that an actual data writing time corresponding to an adjusted substrate bias voltage is within a preset writing time.

Abstract: A read/write method includes: applying a read command to a memory device, the read command pointing to address information, reading to-be-read data from a storage cell corresponding to the address information to which the read command points, and if an error occurs in the to-be-read data, storing the address information to which the read command points in a preset storage space. The read/write operation is not performed on the address information stored in the preset storage space when the user executes the read or write operation on the memory device, which avoids a data error or data loss and greatly improves the reliability and prolongs the service life of the memory device.

Abstract: A package component and forming method thereof are provided. The package component includes a substrate and a conductive layer. The substrate includes a first surface. The conductive layer is disposed over the first surface. The conductive layer includes a first conductive feature and a second conductive feature. The second conductive feature covers a portion of the first conductive feature. A resistance of the second conductive feature is lower than a resistance of the first conductive feature.

Abstract: A memory is provided. The memory includes: a control chip; and a plurality of storage chips, in which the plurality of storage chips are electrically connected with the control chip via a common communication channel, the plurality of storage chips are configured to perform information interaction with the control chip by adopting different clock edges of a first clock signal, the first clock signal has a first clock cycle, the different clock edges include two consecutive rising edges and/or two consecutive falling edges, the plurality of storage chips are further configured to receive a second clock signal and distinguish the different clock edges based on the second clock signal, and a second clock cycle of the second clock signal is greater than the first clock cycle.

Abstract: The embodiments provide a method for reading and writing and a memory device. The method includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; and storing the address information pointed to by the read command into a preset memory space if an error occurs in the data to be read out, and backing up the address information stored in the preset memory space into a non-volatile memory cell according to a preset rule.

Abstract: The present disclosure provides methods and structures to prevent cracks in redistribution layers. A redistribution structure according to the present disclosure includes a first polymer layer disposed over a silicon substrate, a first contact via disposed in the first polymer layer, a second polymer layer disposed over the first contact via, a first redistribution layer including a first conductive pad disposed on the second polymer layer and a second contact via extending through the second polymer layer to physical contact the first contact via, a third polymer layer disposed over the first redistribution layer, a second redistribution layer including a second conductive pad disposed on the third polymer layer and a plurality of third contact vias extending through the third polymer layer to physically contact the first conductive pad. The first conductive pad has at least one opening and the second conductive pad has at least one opening.

Abstract: The embodiments provide a method for reading and writing and a memory device. The method includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; and storing the address information pointed to by the read command into a memory bit of a preset memory space if an error occurs in the data to be read out, wherein the preset memory space is provided with a plurality of the memory bits, and each of the plurality of memory bits is associated with a spare memory cell.

Abstract: An electrochemical apparatus, includes an electrode assembly having a positive electrode plate; a negative electrode plate including a negative electrode current collector, a second active material having a second active substance, and a first active material layer having a first active substance located between the negative electrode current collector and the second active material layer; and a separator disposed between the positive electrode plate and the negative electrode plate. Compacted density of the first active material layer is greater than compacted density of the second active material layer. Sphericity of the first active substance is smaller than sphericity of the second active substance. The separator includes a porous substrate layer and a first coating layer disposed on at least one surface of the porous substrate layer facing the second active material layer. 20 N/m?Adhesion between the separator and the negative electrode plate?2 N/m.

Abstract: The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and an offset voltage storage unit electrically connected to the amplification module; wherein, in an offset cancellation stage of the sense amplifier, the sense amplifier is configured to comprise a current mirror structure to store an offset voltage of the amplification module in an offset voltage storage unit. The present disclosure can realize the offset cancellation of the sense amplifier.

Abstract: A laser grooving operation is performed to form a plurality of grooves in a semiconductor die prior to attaching the semiconductor die to a semiconductor device package substrate. In addition to forming a first groove through which blade sawing is to be performed to separate the semiconductor die from other semiconductor dies, a second groove may be formed between the first groove and a seal ring of the semiconductor die. The second groove is configured to contain any potential delamination that might otherwise propagate to an active region of the semiconductor die. Accordingly, the second groove and the associated laser grooving operation described herein may reduce the likelihood of delamination that might otherwise be caused by swelling and/or expansion in a molding compound formed around the semiconductor die after the semiconductor die is attached to the semiconductor device package substrate.

Abstract: An adhesion layer may be formed over portions of a redistribution layer (RDL) in a redistribution structure of a semiconductor device package. The portions of the RDL over which the adhesion layer is formed may be located in the “shadow” of (e.g., the areas under and/or over and within the perimeter of) one or more TIVs that are connected with the redistribution layer structure. The adhesion layer, along with a seed layer on which the portions of the RDL are formed, encapsulate the portions of the RDL in the shadow of the one or more TIVs, which promotes and/or increases adhesion between the portions of the RDL and the polymer layers of the redistribution structure.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes: a die having a frontside and a backside; a first redistribution layer (RDL) structure disposed on the backside of the die; a second RDL structure disposed on and electrically connected to the frontside of the die; a through integrated fan-out via (TIV) disposed lateral to the die and extending to electrically connect the first and the second RDL structures; a molding compound disposed between the first and second RDL structures; an enhancement layer disposed on the second RDL structure; a plurality of pre-solder bumps; and a plurality of solder balls disposed on and electrically connected to the second RDL structure. The enhancement layer includes a plurality of cascaded openings electrically connected to the first RDL structure. Each of the pre-solder bumps is disposed in one of the cascaded openings.