Abstract: A gas supply device capable of saving space and supplying a mixed gas having components with stable concentration to a processing chamber in a short time includes: a plurality of fluid control units each including a flow path through which gas flows, and fluid control devices provided in the middle of the flow path; a merging flow path including a plurality of connecting portions fluidly connected to the plurality of fluid control units and a single gas outlet portion which derives the gas introduced through the plurality of connecting portions; wherein a plurality of connecting portions is arranged symmetrically with respect to the gas outlet portion in the flow path direction of the merging flow path, and two or more fluid control units are fluidly connected to each of the plurality of connecting portions.

Abstract: A substrate processing apparatus includes a first chamber having an inner space and an opening, a substrate support disposed in the inner space of the first chamber, an actuator configured to move the substrate support between a first position and a second position, a second chamber that is disposed in the inner space of the first chamber and defines a substrate processing space together with the substrate support when the substrate support is located at the first position, and at least one fixing mechanism configured to detachably fix the second chamber to the first chamber in the inner space of the first chamber. The second chamber is transferred between the inner space of the first chamber and an outside of the first chamber through the opening when the substrate support is located at the second position.

Abstract: A plasma monitoring system includes a monitoring device and a control device. The monitoring device is a device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a plate-shaped base substrate, and a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other to acquire light emission intensities of the plasma. The control device acquires light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensity acquired by each of the plurality of spectroscopes.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.

Abstract: There is provided a system for processing a substrate under a depressurized environment. The system comprises: a processing chamber configured to perform desired processing on a substrate; a transfer chamber having a transfer mechanism configured to import or export the substrate into or from the processing chamber; and a controller configured to control a processing process in the processing chamber. The transfer mechanism comprises: a fork configured to hold the substrate on an upper surface; and a sensor provided in the fork and configured to measure an internal state of the processing chamber. The controller is configured to control the processing process in the processing chamber on the basis of the internal state of the processing chamber measured by the sensor.

Abstract: A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.

Abstract: A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.

Abstract: An alumina ceramic member contains an alumina polycrystal with an average grain size less than or equal to 100 ?m. The alumina ceramic member is doped with yttrium in a state other than a crystalline state of an oxide, a crystalline state of a garnet structure, or an amorphous state, at grain boundaries of the alumina polycrystal.

Abstract: A plasma processing apparatus of the present disclosure includes a chamber, a shutter, and a contact portion. The chamber has an opening in a sidewall thereof so as to carry a wafer W into the chamber through the opening, and performs therein a predetermined processing on the wafer W by plasma of a processing gas supplied thereinto. The shutter opens or closes the opening by moving along the sidewall of the chamber. The contact portion is formed of a conductive material, and is not in contact with the shutter while the shutter is moving. When the shutter is in the position for closing the opening, the contact portion is displaced in a direction different from the direction of movement of the shutter to come into contact with the shutter.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.

Abstract: A plasma processing apparatus of the present disclosure includes a chamber, a shutter, and a contact portion. The chamber has an opening in a sidewall thereof so as to carry a wafer W into the chamber through the opening, and performs therein a predetermined processing on the wafer W by plasma of a processing gas supplied thereinto. The shutter opens or closes the opening by moving along the sidewall of the chamber. The contact portion is formed of a conductive material, and is not in contact with the shutter while the shutter is moving. When the shutter is in the position for closing the opening, the contact portion is displaced in a direction different from the direction of movement of the shutter to come into contact with the shutter.

Abstract: A gas supply device capable of saving space and supplying a mixed gas having components with stable concentration to a processing chamber in a short time includes: a plurality of fluid control units each including a flow path through which gas flows, and fluid control devices provided in the middle of the flow path; a merging flow path including a plurality of connecting portions fluidly connected to the plurality of fluid control units and a single gas outlet portion which derives the gas introduced through the plurality of connecting portions; wherein a plurality of connecting portions is arranged symmetrically with respect to the gas outlet portion in the flow path direction of the merging flow path, and two or more fluid control units are fluidly connected to each of the plurality of connecting portions.

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.

Abstract: A processing system capable of increasing an operating time of the processing system is provided. The processing system includes a vacuum transfer module, a plurality of processing modules, a plurality of load-lock modules, and a plurality of atmospheric transfer modules. The vacuum transfer module is configured to transfer a substrate in a pressure lower than an atmospheric pressure. The processing modules are connected to the vacuum transfer module and configured to process the substrate. The load-lock modules are connected to the vacuum transfer module. Each of the atmospheric transfer modules is connected to at least one of the load-lock modules and configured to transfer the substrate in an atmospheric environment.

Abstract: A plasma monitoring system includes a monitoring device and a control device. The monitoring device is a device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a plate-shaped base substrate, and a plurality of spectroscopes having optical axes facing upward on the base substrate, and being disposed apart from each other to acquire light emission intensities of the plasma. The control device acquires light emission intensity distribution data of the plasma in the plasma processing apparatus based on the light emission intensity acquired by each of the plurality of spectroscopes.

Abstract: A particle monitoring system includes a light emitting device for irradiating an inside of a plasma processing apparatus with light, and a monitoring device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a base substrate, a plurality of imaging devices, and a control device. The base substrate has a plate shape. The plurality of imaging devices have optical axes facing upward on the base substrate, and are disposed apart from each other to capture images including scattered light from the particle irradiated with the light. The control device discriminates the particle in the images captured by the plurality of imaging devices.

Abstract: An example embodiment includes a large observation device that observes the object using a quantum beam; a reproduction device that is installed in the large observation device and reproduces an input to the object in a state where the object can be observed by the large observation device; a dynamic state observation device that observes a dynamic state of a functional object functioning by a combination of a plurality of elements; a first information acquisition unit that functionally decomposes the functional object up to an element corresponding to the object and acquires first information that is input information to the element corresponding to the object; and a transmission unit that transmits the first information to the reproduction device, in which the reproduction device reproduces the input to the object on the basis of the first information.

Abstract: An assembly provided with a coolant flow channel includes a base in which the coolant flow channel is formed; and a protrusion component that is disposed in the coolant flow channel, wherein the protrusion component is liftable or rotatable.