Patents by Inventor Jun Hirose

Jun Hirose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210257197
    Abstract: A substrate processing method is provided. The substrate processing method includes (a) placing a substrate on a substrate support disposed in a chamber, the substrate having a plurality of flow sensors on a surface of the substrate; (b) supplying a processing gas into the chamber; and (c) measuring magnitudes and directions of flows of the processing gas on the surface of the substrate using the plurality of flow sensors.
    Type: Application
    Filed: February 18, 2021
    Publication date: August 19, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Risako MATSUDA, Jun HIROSE
  • Patent number: 11062881
    Abstract: A plasma etching method according to an exemplary embodiment comprises arranging a substrate on an electrostatic chuck in a region surrounded by a focus ring. The substrate, in a state of being held by the electrostatic chuck, is etched by means of ions from a plasma. The electrostatic chuck includes a plurality of electrodes including a first electrode and a second electrode. The first electrode extends under a central region of the substrate. The second electrode extends under an edge region of the substrate. A plurality of voltages are respectively applied to the plurality of electrodes, wherein the plurality of voltages are determined such that, in the state in which the substrate is held by the electrostatic chuck, the ions from the plasma are incident on both the central region and the edge region substantially vertically.
    Type: Grant
    Filed: July 19, 2019
    Date of Patent: July 13, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masayuki Sawataishi, Jun Hirose
  • Publication number: 20210005427
    Abstract: A plasma etching method according to an exemplary embodiment comprises arranging a substrate on an electrostatic chuck in a region surrounded by a focus ring. The substrate, in a state of being held by the electrostatic chuck, is etched by means of ions from a plasma. The electrostatic chuck includes a plurality of electrodes including a first electrode and a second electrode. The first electrode extends under a central region of the substrate. The second electrode extends under an edge region of the substrate. A plurality of voltages are respectively applied to the plurality of electrodes, wherein the plurality of voltages are determined such that, in the state in which the substrate is held by the electrostatic chuck, the ions from the plasma are incident on both the central region and the edge region substantially vertically.
    Type: Application
    Filed: July 19, 2019
    Publication date: January 7, 2021
    Inventors: Masayuki SAWATAISHI, Jun HIROSE
  • Publication number: 20200402764
    Abstract: A maintenance device has a cover and a fixing member. The cover is in a vacuum atmosphere during substrate processing, is formed to have a size corresponding to a boundary line between a first part and a second part of a processing container, which can be separated into the first part and the second part, or an opening surface separating the first part and the second part, and has airtightness, and visual transparency at least in a part. The fixing member fixes in an airtight manner the cover along the boundary line between the first part and the second part of the processing container or to the opening surface separating the first part and the second part.
    Type: Application
    Filed: September 2, 2020
    Publication date: December 24, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Takehiro UEDA, Jun HIROSE, Kazuyuki TEZUKA
  • Patent number: 10859426
    Abstract: Disclosed is a method of inspecting a flow rate measuring system used in a substrate processing system. The flow rate measuring system provides a gas flow path used for calculating a flow rate in a build-up method. A gas output by a flow rate controller of a gas supply unit of the substrate processing system may be supplied to the gas flow path. In the method, apart from a previously obtained initial value of a volume of the gas flow path, a volume of the gas flow path is obtained at the time of inspection of the flow rate measuring system. Then, the obtained volume is compared to the initial value.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: December 8, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Hirose, Norihiko Amikura, Risako Miyoshi, Shinobu Onodera
  • Patent number: 10845119
    Abstract: A method includes a step of increasing or decreasing a flow rate of a gas of the a second gas supply system, by a predetermined time from a start of a gas treatment step of the process recipe or a by a predetermined time before a start of the gas treatment step, by using apparatus information regarding a first gas supply system of the first substrate treatment apparatus and the second gas supply system of the second substrate treatment apparatus, and arranging the treatment process, and in this step, the treatment process of the second substrate treatment apparatus performed using the process recipe conforms to the treatment process of the first substrate treatment apparatus performed using the process recipe.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: November 24, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Hirose, Norihiko Amikura, Risako Miyoshi
  • Publication number: 20200365380
    Abstract: A substrate support for use in a plasma processing chamber includes a substrate support body, a lifter pin and a lift mechanism. The substrate support body has a pin through-hole and the pin through-hole has a female-threaded inner wall. The lifter pin has a base segment, an intermediate segment, and a leading segment. The lifter pin is inserted into the pin through-hole, the intermediate segment is male-threaded, and the male-threaded intermediate segment is screwable to the female-threaded inner wall. The lift mechanism is configured to vertically move the lifter pin relative to the substrate support body.
    Type: Application
    Filed: May 11, 2020
    Publication date: November 19, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takehiro UEDA, Jun HIROSE
  • Patent number: 10840069
    Abstract: A plasma processing apparatus includes a mounting table, a power supply unit and a power supply control unit. The mounting table has therein a coil provided along a mounting surface on which a focus ring is mounted. The power supply unit is configured to apply a high frequency voltage to the coil. The power supply control unit is configured to control the power supply unit to increase a power of the high frequency voltage applied to the coil in accordance with consumption of the focus ring.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: November 17, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yasuhiro Tobe, Jun Hirose
  • Publication number: 20200219753
    Abstract: A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.
    Type: Application
    Filed: January 8, 2020
    Publication date: July 9, 2020
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yohei UCHIDA, Jun HIROSE
  • Patent number: 10361089
    Abstract: A plasma processing method according to an exemplary embodiment includes a process of applying a first plasma processing to a substrate in a chamber, and a process of applying a second plasma processing to the substrate in the chamber. In the process of applying the first plasma processing, a plurality of first heaters in a chuck main body of an electrostatic chuck are driven, and a plurality of second heaters in the chuck main body are driven. In the process of applying the second plasma processing, the driving of at least the plurality of second heaters is stopped.
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: July 23, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kengo Kaneko, Jun Hirose
  • Publication number: 20190198298
    Abstract: There is provision of a plasma etching apparatus including a processing vessel capable of being evacuated, a lower electrode provided in the processing vessel that is configured to place a substrate, an upper electrode provided in the processing vessel arranged in parallel with the lower electrode so as to face each other, a process gas supply unit configured to supply process gas to a processing space between the upper electrode and the lower electrode, a high frequency power supply unit configured to supply high frequency electric power for generating plasma from process gas, a focus ring surrounding a periphery of the substrate, a direct current (DC) power source configured to output DC voltage applied to the focus ring, a heating unit configured to heat the focus ring, and a temperature measurement unit for measuring temperature of the focus ring.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 27, 2019
    Inventors: Jun HIROSE, Takehiro UEDA
  • Publication number: 20190066985
    Abstract: An assembly provided with a coolant flow channel includes a base in which the coolant flow channel is formed; and a protrusion component that is disposed in the coolant flow channel, wherein the protrusion component is liftable or rotatable.
    Type: Application
    Filed: August 23, 2018
    Publication date: February 28, 2019
    Inventors: Jun HIROSE, Kaoru OOHASHI
  • Publication number: 20190063987
    Abstract: Disclosed is a method of inspecting a flow rate measuring system used in a substrate processing system. The flow rate measuring system provides a gas flow path used for calculating a flow rate in a build-up method. A gas output by a flow rate controller of a gas supply unit of the substrate processing system may be supplied to the gas flow path. In the method, apart from a previously obtained initial value of a volume of the gas flow path, a volume of the gas flow path is obtained at the time of inspection of the flow rate measuring system. Then, the obtained volume is compared to the initial value.
    Type: Application
    Filed: August 30, 2018
    Publication date: February 28, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Jun HIROSE, Norihiko AMIKURA, Risako MIYOSHI, Shinobu ONODERA
  • Patent number: 10173742
    Abstract: One embodiment provides a rear portion structure of a saddle-ride type vehicle. The structure includes: seat frames inclined rearward and upward and supporting a riding seat; and a rear cowl having an upper cowl and a lower cowl. The upper cowl includes: a first cowl; and a second cowl which is connected to the first cowl and forms an opening upper edge portion of an opening for exposing a tail light. The lower cowl includes: a third cowl; and a fourth cowl which is connected to the third cowl and forms an opening lower edge portion of the opening. An approximately-U-shaped recessed portion is opened at a rear end of the third cowl. The fourth cowl forms the opening lower edge portion while covering the U-shaped recessed portion.
    Type: Grant
    Filed: March 7, 2017
    Date of Patent: January 8, 2019
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Koji Mizuta, Jun Hirose
  • Publication number: 20180350569
    Abstract: A plasma processing method according to an exemplary embodiment includes a process of applying a first plasma processing to a substrate in a chamber, and a process of applying a second plasma processing to the substrate in the chamber. In the process of applying the first plasma processing, a plurality of first heaters in a chuck main body of an electrostatic chuck are driven, and a plurality of second heaters in the chuck main body are driven. In the process of applying the second plasma processing, the driving of at least the plurality of second heaters is stopped.
    Type: Application
    Filed: May 25, 2018
    Publication date: December 6, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kengo KANEKO, Jun HIROSE
  • Publication number: 20180350566
    Abstract: A plasma processing apparatus includes a mounting table, a power supply unit and a power supply control unit. The mounting table has therein a coil provided along a mounting surface on which a focus ring is mounted. The power supply unit is configured to apply a high frequency voltage to the coil. The power supply control unit is configured to control the power supply unit to increase a power of the high frequency voltage applied to the coil in accordance with consumption of the focus ring.
    Type: Application
    Filed: June 5, 2018
    Publication date: December 6, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yasuhiro TOBE, Jun HIROSE
  • Publication number: 20180233328
    Abstract: A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber.
    Type: Application
    Filed: February 15, 2018
    Publication date: August 16, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Takehiro UEDA, Jun HIROSE
  • Patent number: 10020172
    Abstract: There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.
    Type: Grant
    Filed: May 26, 2015
    Date of Patent: July 10, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Mitsunori Ohata, Hidetoshi Kimura, Kiyoshi Maeda, Jun Hirose, Tsuyoshi Hida
  • Patent number: D859221
    Type: Grant
    Filed: March 13, 2018
    Date of Patent: September 10, 2019
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Takashi Shigihara, Tetsuya Nakazawa, Jun Hirose, Kazuyuki Tachibana
  • Patent number: D864080
    Type: Grant
    Filed: March 13, 2018
    Date of Patent: October 22, 2019
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Takashi Shigihara, Tetsuya Nakazawa, Jun Hirose