Abstract: In a magnetic field generator for magnetron plasma generation which comprises a dipole-ring magnet with a plurality of columnar anisotropic segment magnets arranged in a ring-like manner, or in an etching apparatus and a method both of which utilize the magnetic field generator, the uniformity of plasma treatment over the entire surface of a wafer (workpiece) is improved by controlling the direction of the magnetic field relative to the working surface of the wafer (workpiece) which is subject to plasma treatment such as etching.

Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.

Abstract: There is provided an eccentrically oscillating speed reducer capable of reducing a number of parts more than that of a background art. An eccentrically oscillating speed reducer 100 includes a case 110 having inner teeth 110a, a plurality of crankshafts having outer teeth, outer teeth gears 131 and 132 having outer teeth 131a and 132a brought in mesh with the inner teeth 110a of the case 110 and eccentrically moved by the crankshafts, a carrier 140 rotatably supporting the crankshafts and rotated to move relative to the case 110 by the crankshafts, and a cylindrical gear 180 brought in mesh with the outer teeth of the crankshafts for transmitting a power inputted to one crankshaft 121 of the plurality of crankshafts to remaining crankshafts, and the cylindrical gear 180 is rotatably supported by sliding friction.

Abstract: A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

Abstract: A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

Abstract: A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

Abstract: A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.

Abstract: A reduction gear device utilized in a joint portion of an industrial robot, durability of the reduction gear device being increased in the case where torque applied to the reduction gear device is high and the reduction gear device is utilized at a high operation rate. In a reduction gear device is provided with a first reduction mechanism and a second reduction mechanism, and the second reduction mechanism includes an external gear that revolves eccentrically, an internal gear that causes orbital revolution of the eccentric movement of the external gear, and an output shaft on either the external gear or the internal gear.

Abstract: A speed reducer 100 to be attached to an articulated portion of an industrial robot includes a first-stage reduction gear mechanism 10 of a spur gear type speed reducing unit and a second-stage reduction gear mechanism 30 of an eccentric rocking type speed reducing unit, and the output from the eccentric rocking type speed reducing unit is extracted from an internal gear member or a support member. When the input speed to the first input gear unit is 2,000 RPM, the output from the eccentric rocking type speed reducing unit is 20 RPM or higher. The reduction ratio of the first-stage reduction gear mechanism is so selected that individual crankshafts may rotate not over 1,000 RPM when the output from the eccentric rocking type speed reducing unit is 20 RPM or higher.

Abstract: A water treatment apparatus includes a storage unit storing water to be treated including a pharmaceutical drug, an apply unit applying the water to be treated to the storage unit, an addition unit adding into the water to be treated metal salt generating halide ions when dissolved in the water to be treated, and an energizing unit applying a current to a pair of electrodes immersed in the water to be treated in the storage unit. The pharmacological activity of the pharmaceutical drug is eliminated or reduced by decomposing or altering at least a portion of the chemical structure of the pharmaceutical drug included in the water to be treated through electrolysis.

Abstract: Provided is a relative pressure control system has a simple configuration, but enables accurate regulation of a division ratio of an operation gas, and concurrently makes it possible to securely drain the operation gas from an operation gas pipeline in case of emergency. The system includes a plurality of air operated valves of a normally open type that are connected to an operation gas pipeline supplied with an operation gas; pressure sensors that are series connected to the respective air operated valves and that detect output pressures of the respective air operated valves; a controller that controls operation pressures of the respective air operated valves in accordance with the pressures detected by the pressure sensors; and a hard interlock solenoid valve that correlates the plurality of air operated valves to one another so that at least one of the plurality of air operated valves is normally opened.

Abstract: A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.

Abstract: The spindle motor includes a rotational shaft 30 which has a conical portion 34, whose outer surface gradually widens toward a thrust dynamic pressure bearing 70, and a straight portion 33 with a fixed outer diameter. Radial dynamic pressure bearing 60 supports the radial load of the rotating shaft 30. The radial bearing has a conical bearing surface 64 and a straight bearing surface 63 corresponding to the conical portion 34 and the straight portion 33 of the rotating shaft 30, respectively. Rotating shaft 30 is supported and aligned during rotation by fluid dynamic forces generated by the conical portion 34.

Abstract: A vacuum process system comprises: a load port on which an object to be processed is set; a common transfer chamber disposed adjacent to the load port, having an internal space set at an atmospheric pressure level, and including a first transfer device that is movable and transfers the object into/from the load port, the first transfer device being disposed within the internal space; and a process unit having one process chamber for subjecting the object to a predetermined process, and a vacuum transfer chamber connected to the process chamber, having an internal space set at a vacuum pressure level, and including a second transfer device for transferring the object into/from the process chamber, the second transfer device being disposed within the internal space. The process units are individually connected to the common transfer chamber such that the process units are substantially parallel to each other. The vacuum chamber of each process unit is connected to the common transfer chamber.

Abstract: According to the present invention, there is disclosed a gas introduction system for temperature adjustment comprising passing a gas whose temperature is managed for the temperature adjustment of an object to be processed between a mounting surface of a mounting base for holding the object to be processed under vacuum and a back surface of the object to be processed through a gas supply line, controlling a flow rate adjustment valve by control means based on a measured pressure of the gas supply line measured by a manometer, and adjusting a gas flow rate to the gas supply line so as to obtain a set pressure, so that the gas pressure can be set to a predetermined value in a short time, and the system is miniaturized with little waste of the gas.

Abstract: A vacuum process system comprises: a load port on which an object to be processed is set; a common transfer chamber disposed adjacent to the load port, having an internal space set at an atmospheric pressure level, and including a first transfer device that is movable and transfers the object into/from the load port, the first transfer device being disposed within the internal space; and a process unit having one process chamber for subjecting the object to a predetermined process, and a vacuum transfer chamber connected to the process chamber, having an internal space set at a vacuum pressure level, and including a second transfer device for transferring the object into/from the process chamber, the second transfer device being disposed within the internal space. The process units are individually connected to the common transfer chamber such that the process units are substantially parallel to each other. The vacuum chamber of each process unit is connected to the common transfer chamber.

Abstract: Provided is a relative pressure control system has a simple configuration, but enables accurate regulation of a division ratio of an operation gas, and concurrently makes it possible to securely drain the operation gas from an operation gas pipeline in case of emergency. The system includes a plurality of air operated valves of a normally open type that are connected to an operation gas pipeline supplied with an operation gas; pressure sensors that are series connected to the respective air operated valves and that detect output pressures of the respective air operated valves; a controller that controls operation pressures of the respective air operated valves in accordance with the pressures detected by the pressure sensors; and a hard-interlock solenoid valve that correlates the plurality of air operated valves to one another so that at least one of the plurality of air operated valves is normally opened.

Abstract: A vacuum process system comprises: a load port on which an object to be processed is set; a common transfer chamber disposed adjacent to the load port, having an internal space set at an atmospheric pressure level, and including a first transfer device that is movable and transfers the object into/from the load port, the first transfer device being disposed within the internal space; and a process unit having one process chamber for subjecting the object to a predetermined process, and a vacuum transfer chamber connected to the process chamber, having an internal space set at a vacuum pressure level, and including a second transfer device for transferring the object into/from the process chamber, the second transfer device being disposed within the internal space. The process units are individually connected to the common transfer chamber such that the process units are substantially parallel to each other. The vacuum chamber of each process unit is connected to the common transfer chamber.

Abstract: The object of the present invention is to provide a water treatment device in which temperature does not affect performance in nitrogen removal. Water circulates in a first anaerobic filter bed chamber 5, a second anaerobic filter bed chamber 10, a contact aeration chamber 14, a sedimentation chamber 19, and an electrolytic chamber 59 for phosphorus removal. The supernatant in sedimentation chamber 19 flows into a disinfection chamber 21 and is then sent to an electrolytic chamber 100 for nitrogen removal. An electrode pair is provided inside electrolytic chamber 100. Halogen ions present in the water are oxidized on the anode side. After halogen gas is generated, this gas reacts with water and generates hypohalous acid. On the cathode side, the nitrogen components in the water are converted to nitrate ions, and these nitrate ions are further converted to ammonium ions. The hypohalous acid and ammonium ions react, and the nitrogen components are converted to nitrogen gas by way of chloramine.

Abstract: A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.