Abstract: A semiconductor laser includes an anode region of a first conductivity type made of a highly doped region, an active layer adjacent the anode region, a channel region made of a high-resistivity region and adjacent the active layer, a cathode region of a second conductivity type at one end of the channel region which is made of a highly doped region, and a gate region that surrounds at least part of said channel region and which is made of a highly doped region of the first conductivity type. The anode region and channel region have a wider band gap than that of the active layer.

Abstract: A solid state image pickup device having an electronic shutter function is disclosed. The device comprises a plurality of picture cells each having a static induction transistor and arranged in a matrix, a plurality of vertical and horizontal scanning lines for scanning the cells, vertical and horizontal registers for generating scanning pulses which drive the vertical and horizontal scanning lines, a readout signal line for reading out light information stored in the cells, a reset signal line for resetting the cells, and a shutter speed control circuit for optionally setting in one frame period the timing of reset scanning pulses generated from a vertical register.

Abstract: A method of forming a pn junction with a Group IIB-VIB compound semiconductor containing Zn is disclosed, the method including preparing an n type semiconductor region either locally or entirely in a Group IIB-VIB compound semiconductor crystal obtained by relying on a crystal growth method in liquid phase using a temperature difference technique, and subjecting this crystal to a thermal annealing in a Zn solution or in a Zn atmosphere to produce an n type region. Crystal growth is conducted while controlling the vapor pressure of the constituent Group IVB element to produce a p type region. A combination of all these steps gives a more stable pn junction.

Abstract: This invention relates to a GaAs semiconductor device and more particularly to a GaAs static induction transistor integrated circuit which operates at a very high speed. Gallium arsenide has the features that the mobility of electrons is higher than that in silicon and that the band structure has a direct gap. The mobility of electrons in gallium arsenide is several times as high as that in silicon; this is very suitable for the manufacture of a semiconductor device of high-speed operation. Further, since gallium arsenide has the direct gap, the electron-hole recombination rate is high and the minority carrier storage effect is extremely small. By causing the recombination at the direct gap, light emission can be achieved more efficiently. Accordingly, a light receiving and emitting semiconductor device can be obtained through the use of gallium arsenide. As the propagation velocity of light is very fast, signal transfer between semiconductor chips can be achieved at ultra-high speed.

Abstract: From each of a plurality of picture element cells having a non-destructive readout characteristic, arranged two-dimensionally and connected to the same signal output line, an image signal is read out without mutual interference of the picture elements. To this end, a blanking period is provided between the readout periods of the respective picture element cells connected to the same signal output line and, in this blanking period, the signal output line is cleared (refreshed).

Abstract: In a static induction type semiconductor device comprising a semiconductor region having one conductivity type and a low impurity concentration and gate regions having an opposite conductivity type and a high impurity concentration formed in the semiconductor region to thereby define a channel region between these gate regions, there is provided a subsidiary semiconductor region having the one conductivity type and a relatively high impurity concentration either around each gate region to leave an effective channel region in the semiconductor region, or adjacent to the effective channel region in the entire channel region on the drain side. By so constructing the device, this effective channel region has a relatively low potential difference even when the channel region is completely depleted, and provides a relatively wide current path.

Abstract: A hetero-junction static induction transistor (SIT) of normal or upside-down type to be operated by applying a forward bias across the gate and source regions, in which at least its source region and gate region among the source, drain and gate regions is formed with a material having a band gap broader than that of the channel region. Such a SIT provides a large current amplification factor, improved frequency characteristics and is suitable for high power operation and for use in semiconductor integrated circuits.

Abstract: A thermionic emission transistor comprising: an emitter region formed with a semiconductor material having a first conductivity type and a high impurity concentration; a collector region formed with a semiconductor material having a first conductivity type and a high impurity concentration; a base region made of a semiconductor material having a second conductivity type opposite to said first conductivity type and a high impurity concentration, that portion of said emitter region located adjacent to said base region having an energy band gap broader than that of the base region, that portion of said base region located adjacent to the emitter region having an impurity concentration of about 3.times.10.sup.18 cm.sup.-3 or more. Such new transistor has a large transconductance and can be operated with a very large current gain in spite of a very small size of the whole device, and is very suitable for integrated circuit.

Abstract: An image storage device in which stored information read out from each non-destructive readout picture element cell of a photoelectric converter is applied at a first scanning speed to a visual display unit to produce a visible image and the information is also supplied at a lower second scanning speed to a recorder. Switching or branching means is provided for applying the information from the photoelectric converter to the visual display unit and the recorder.

Abstract: A two-dimensional solid-state image sensor which is equipped with an image processing function and hence is able to directly output image information subjected to two-dimensional image processing. The two-dimensional solid-state image sensor is provided with a photoelectric converter having non-destructive readout type image sensor cells arranged in a matrix form; a scanner for scanning the photoelectric converter in such a manner that stored information of each image sensor cell is read out together with stored information of other image sensor cells bearing predetermined positional relationships to the image sensor cell to be read out; and an arithmetic unit for conducting predetermined operations for the plurality of stored information read out by the scanner to output an image signal subjected to two-dimensional image processing.

Abstract: A solid-state image sensor which detects the quantity of light incident on image sensor cells during exposure and performs exposure control in accordance with an exposure value thus obtained.

Abstract: A gallium arsenide static induction transistor of normally-off type simple in manufacture and exhibiting a superior function and suitable for use in low and medium power operation in integrated circuit is obtained by arranging so that its channel region has a length l (.mu.m), a width (.mu.m) and an impurity concentration N (cm.sup.-3), and that the ratio l/w is 0.5-5.0 and that the product Nw.sup.2 is not larger than 2.5.times.10.sup.15 cm.sup.-3..mu.m.sup.2.

Abstract: A method for producing a Group II-VI compound semiconductor crystal containing a Group VI element other than Te by a temperature-difference method for growing the crystal from a solution containing Te, the Group VI element and a Group II-VI compound crystal source where Te is used as a major component of a solvent and the crystal is grown at a relatively low temperature by maintaining the vapor pressure of the VI group element at a predetermined value. This method can form a practical p-n junction by using two solutions, one containing a p-type additive and the other an n-type additive, and contacting a substrate successively with each of the solutions for a predetermined time length.

Abstract: A semiconductor image sensor of wide dynamic range, high sensitivity, low noise and high image clarity, which is provided with a hook structure for detecting radiant energy input information, a readout transistor and means for refreshing stored optical information and which is capable of non-destructive readout of optical information, and a method of operating such a semiconductor image sensor. The impurity concentrations in the hook structure, their distribution profiles, materials of layers forming the hook structure and their thicknesses are so selected as to optimize the carrier storage function of the hook structure, thereby permitting the non-destructive readout of the optical information. The ratio between the junction capacitance and the earth capacitance of a floating pn junction establishing a potential barrier in the hook structure is selected so that a stored voltage in the floating pn junction and the readout sensitivity may become maximum.

Abstract: A semiconductor image sensor which comprises a plurality of image sensor cells, each having a photosensing and accumulation region of an n.sup.+ -p.sup.- -(i)-p.sup.+ -n.sup.+ (or p.sup.+ -n.sup.- -(i)-n.sup.+ -p.sup.+) hook structure which is formed by sequentially forming its respective regions in a semiconductor substrate inwardly thereof from its surface. The photosensing and accumulation regions are isolated by insulating isolation regions from adjacent ones of them. A tapering conductive region, which acts as an electric field lens on charged carriers, is formed to extend into a high resistivity layer of the photosensing region from the end face of each insulating isolation region on the side of the semiconductor substrate.

Abstract: The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition technique. The O/N ratio in the film may be varied by, for example, varying the distance between the substrate and the substance-supply source, or by varying the proportion of an oxidizing gas contained in a carrier gas. This film is used either as a surface passivation film of III-V compound semiconductors such as GaAs, or as an insulating film for active surface portions of IG-FET, or as an optical anti-reflective film.

Abstract: A multiplicity of field effect type semiconductor memory elements are formed perpendicular to a surface of a semiconductor wafer. Charge carriers are transported in the semiconductor bulk perpendicular to the surface and a potential barrier is formed in the current path to accomplish storing. Since the bulk mobility of a semiconductor is far larger than the surface mobility, the transit time of the carriers is much improved. Furthermore, since each structure of the memory cells is formed perpendicular to the semiconductor surface, the surface occupation area per memory cell is reduced. Thus, a high-speed and high-density semiconductor memory device is provided.

Abstract: A high sensitivity semiconductor photo-electric converter is provided by electrically isolating the gate region of a static induction transistor which exhibits non-saturating current versus voltage characteristic. Optically ionized minority carriers are stored in the gate region to control the potential thereof. A semiconductor gate region provided with a insulated gate is very effective to enhance the dynamic range of the converter. Non-saturating characteristic enables enlargement of the output current simply by increasing the drain voltage. A high-speed and high sensitivity image pick-up device can be materialized by integrating a multiplicity of the static induction type photo-electric converter elements. A switching transistor may be merged in the gate region of each photo-electric converter element to enhance the operation speed of the image pick-up device.

Abstract: The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition technique. The O/N ratio in the film may be varied by, for example, varying the distance between the substrate and the substance-supply source, or by varying the proportion of an oxidizing gas contained in a carrier gas. This film is used either as a surface passivation film of III-V compound semiconductors such as GaAs, or as an insulating film for active surface portions of IG-FET, or as an optical anti-reflective film.This is a division of application Ser. No. 215,442 filed Dec. 11, 1980, now Pat. 4,331,737, which in turn is a continuation of application Ser.No. 23,766, filed Mar. 26, 1979.

Abstract: A solid-state image storage device employing a recording system which permits easy reproduction of an excellent image even if a relatively low-grade recording medium and recording and reproducing device are used. The solid-state image storage device is provided with a photoelectric converter having a plurality of non-destructive readout image sensor cells arranged in a predetermined form; a scanner for scanning the photoelectric converter to read out image information of the image sensor cells; and a recorder having a recording medium for recording the image information read out by the scanner. An image formed on the photoelectric converter is read out by the scanner a plurality of times and each image information thus read out is recorded at one position on the recording medium of the recorder.