Patents by Inventor Jun Lin

Jun Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR DETERMINING TWO-EYE GAZE POINT AND HOST
    Publication number: 20230297165
    Abstract: The embodiments of the disclosure provide a method for determining a two-eye gaze point and a host. The method includes: obtaining a first gaze point of a first eye on a reference plane and obtaining a second gaze point of a second eye on the reference plane; and determining a two-eye gaze point via combining the first gaze point and the second gaze point.
    Type: Application
    Filed: December 26, 2022
    Publication date: September 21, 2023
    Applicant: HTC Corporation
    Inventors: Yan-Min Kuo, Jun-Lin Guo
  • Fabricating method of reducing photoresist footing
    Patent number: 11762293
    Abstract: A fabricating method of reducing photoresist footing includes providing a silicon nitride layer. Later, a fluorination process is performed to graft fluoride ions onto a top surface of the silicon nitride layer. After the fluorination process, a photoresist is formed to contact the top surface of the silicon nitride layer. Finally, the photoresist is patterned to remove at least part of the photoresist contacting the silicon nitride layer.
    Type: Grant
    Filed: May 11, 2021
    Date of Patent: September 19, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hao-Hsuan Chang, Da-Jun Lin, Yao-Hsien Chung, Ting-An Chien, Bin-Siang Tsai, Chih-Wei Chang, Shih-Wei Su, Hsu Ting, Sung-Yuan Tsai
  • EYEWEAR DEVICE HINGE ASSEMBLY
    Publication number: 20230288734
    Abstract: A hinge assembly mounted on a housing of form part of an electronic device includes a metal hinge base extending through a mounting hole in a wall of the housing, the hinge base being connected in heat transfer relationship to a metal anchor plate on an inner side of the housing wall. The anchor plate additionally serves as a mounting base for heat-generating electronics inside the housing, the heat-generating electronics being in heat transfer relationship with the anchor plate, so that the anchor plate and the hinge base together form part of a heat transfer path conducting heat from the interior of the housing to an exterior heatsink provided be and external device component.
    Type: Application
    Filed: May 12, 2023
    Publication date: September 14, 2023
    Inventors: Emily Lauren Clopp, Jun Lin, Douglas Wayne Moskowitz, Stephen Andrew Steger, Nicholas Daniel Streets
  • HEAT MANAGEMENT IN WIRELESS ELECTRONIC DEVICES
    Publication number: 20230282966
    Abstract: An eyewear device has an antenna system having at least one element which contributes to wireless signal transmission, and which is thermally connected to a heat-generating electronic component of the eyewear device to serve as a heat sink for the electronic component. A driven antenna element and/or a plurality of PCB extenders electrically-connected to a PCB ground plane can thus be employed for both signal transmission and heat management.
    Type: Application
    Filed: May 11, 2023
    Publication date: September 7, 2023
    Inventors: Andrea Ashwood, Patrick Kusbel, Jun Lin, Douglas Wayne Moskowitz, Ugur Olgun, Russell Douglas Patton, Patrick Timothy McSweeney Simons, Stephen Andrew Steger
  • Isolation structure for preventing unintentional merging of epitaxially grown source/drain
    Patent number: 11749683
    Abstract: A semiconductor device includes a first active region and a second active region disposed over a substrate. A first source/drain component is grown on the first active region. A second source/drain component is grown on the second active region. An interlayer dielectric (ILD) is disposed around the first source/drain component and the second source/drain component. An isolation structure extends vertically through the ILD. The isolation structure separates the first source/drain component from the second source/drain component.
    Type: Grant
    Filed: April 25, 2022
    Date of Patent: September 5, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.
    Inventors: Ta-Chun Lin, Kuan-Lin Yeh, Chun-Jun Lin, Kuo-Hua Pan, Mu-Chi Chiang
  • ETHERNET CODING METHOD AND APPARATUS
    Publication number: 20230268932
    Abstract: This application discloses an Ethernet coding method and apparatus, to adapt to a scenario in which a higher transmission bit error rate is caused by a high bandwidth. The method includes: a transmit end encodes first to-be-encoded information by using a first forward error correction (FEC) codeword, to obtain first encoded data, where the first forward error correction FEC codeword is a Reed-Solomon forward error correction (RS-FEC) codeword; and the transmit end encodes the first encoded data by using a second FEC codeword, to obtain second encoded data, where a code length N and an information bit length K of the second FEC codeword satisfy the following formula: M1 ? N K ? M2, where M1 is a throughput of the first encoded data, and M2 is a throughput of the second encoded data.
    Type: Application
    Filed: April 28, 2023
    Publication date: August 24, 2023
    Inventors: Zengchao YAN, Huixiao MA, Zhongfeng WANG, Jun LIN
  • Memory cell array circuit and method of forming the same
    Patent number: 11735263
    Abstract: A method of operating a memory circuit includes generating a first voltage by a first amplifier circuit of a first driver circuit coupled to a first column of memory cells, and generating a first current in response to the first voltage. The first current includes a first set of leakage currents and a first write current. The method further includes generating, by a tracking circuit, a second set of leakage currents configured to track the first set of leakage currents of the first column of memory cells, and mirroring the first current in a first path with a second current in a second path by a first current mirror. The second current includes the second set of leakage currents and a second write current. The first write current corresponds to the second write current. The first set of leakage currents corresponds to the second set of leakage currents.
    Type: Grant
    Filed: July 22, 2022
    Date of Patent: August 22, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chin-I Su, Chung-Cheng Chou, Yu-Der Chih, Zheng-Jun Lin
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20230260937
    Abstract: A method for fabricating a semiconductor device includes the steps of first forming an aluminum (Al) pad on a substrate, forming a passivation layer on the substrate and an opening exposing the Al pad, forming a cobalt (Co) layer in the opening and on the Al pad, bonding a wire onto the Co layer, and then performing a thermal treatment process to form a Co—Pd alloy on the Al pad.
    Type: Application
    Filed: April 25, 2023
    Publication date: August 17, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Da-Jun Lin, Bin-Siang Tsai, Fu-Yu Tsai
  • Systems and methods of interior sensor-based vehicle liftgate actuation
    Patent number: 11725451
    Abstract: Systems and methods of opening a vehicle liftgate based on an interior radar sensor that may be used to detect a user outside the rear of the vehicle are provided. The interior radar sensor may be installed behind the center line of a headliner of the vehicle, and detect the user's head and/or an upper-body gesture through the rear window of the vehicle. e.g., upon detection of a key fob carried by the user outside the vehicle. Upon detection of a valid gesture, e.g., a predetermined pattern of movement, by the user, the liftgate may be actuated to open.
    Type: Grant
    Filed: April 26, 2021
    Date of Patent: August 15, 2023
    Assignee: Ford Global Technologies, LLC
    Inventors: Jun Lin, Jialiang Le, Saeed Barbat
  • EYEWEAR DEVICE CHARGING CASE
    Publication number: 20230248130
    Abstract: A carry case for an electronics-enabled eyewear device, such as smart glasses, has charging contacts that are movable relative to a storage chamber in which the eyewear device is receivable. The charging contacts are connected to a battery carried by the case for charging the eyewear device via contact coupling of the charging contacts to corresponding contact formations on an exterior of the eyewear device. The charging contacts are in some instances mounted on respective flexible walls defining opposite extremities of the storage chamber. The contact formations on the eyewear device are in some instances provided by hinge assemblies that couple respective temples to a frame of the eyewear device.
    Type: Application
    Filed: April 13, 2023
    Publication date: August 10, 2023
    Inventors: Jinwoo Kim, Jun Lin
  • MEMORY CELL ARRAY CIRCUIT AND METHOD OF FORMING THE SAME
    Publication number: 20230253041
    Abstract: A memory circuit includes a first driver circuit, a memory cell array including a first column of memory cells, a first transistor coupled between the first driver circuit and the memory cell array, a second driver circuit, a first column of tracking cells and a header circuit coupled to the first driver circuit and the second driver circuit. The first transistor is configured to receive a first select signal. The first column of tracking cells is configured to track a leakage current of the first column of memory cells, and is coupled between a first conductive line and a second conductive line, the first conductive line being coupled to the second driver circuit.
    Type: Application
    Filed: April 20, 2023
    Publication date: August 10, 2023
    Inventors: Chin-I SU, Chung-Cheng CHOU, Yu-Der CHIH, Zheng-Jun LIN
  • Semiconductor device and method for fabricating the same
    Patent number: 11723215
    Abstract: A method for fabricating a semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) on a substrate, forming a top electrode on the MTJ, forming an inter-metal dielectric (IMD) layer around the top electrode and the MTJ, forming a landing layer on the IMD layer and the MTJ, and then patterning the landing layer to form a landing pad. Preferably, the landing pad is disposed on the top electrode and the IMD layer adjacent to one side of the top electrode.
    Type: Grant
    Filed: November 30, 2020
    Date of Patent: August 8, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Da-Jun Lin, Yi-An Shih, Bin-Siang Tsai, Fu-Yu Tsai
  • Method of manufacturing magnetic tunnel junction (MTJ) device
    Patent number: 11723287
    Abstract: A magnetic tunnel junction (MTJ) device includes a bottom electrode, a reference layer, a tunnel barrier layer, a free layer and a top electrode. The bottom electrode and the top electrode are facing each other. The reference layer, the tunnel barrier layer and the free layer are stacked from the bottom electrode to the top electrode, wherein the free layer includes a first ferromagnetic layer, a spacer and a second ferromagnetic layer, wherein the spacer is sandwiched by the first ferromagnetic layer and the second ferromagnetic layer, wherein the spacer includes oxidized spacer sidewall parts, the first ferromagnetic layer includes first oxidized sidewall parts, and the second ferromagnetic layer includes second oxidized sidewall parts. The present invention also provides a method of manufacturing a magnetic tunnel junction (MTJ) device.
    Type: Grant
    Filed: September 29, 2022
    Date of Patent: August 8, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Da-Jun Lin, Shih-Wei Su, Bin-Siang Tsai, Ting-An Chien
  • Dynamic inhibit voltage to reduce write power for random-access memory
    Patent number: 11715518
    Abstract: In some aspects of the present disclosure, a memory device is disclosed. In some aspects, the memory device includes a first voltage regulator to receive a word line voltage provided to a memory array; a resistor network coupled to the first voltage regulator to provide an inhibit voltage to the memory array, wherein the resistor network comprises a plurality of resistors and wherein each of the resistors are coupled in series to an adjacent one of the plurality of resistors; and a switch network comprising a plurality of switches, wherein each of the switches are coupled to a corresponding one of the plurality of resistors and to the memory array via a second voltage regulator.
    Type: Grant
    Filed: September 9, 2021
    Date of Patent: August 1, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Zheng-Jun Lin, Chin-I Su, Pei-Ling Tseng, Chung-Cheng Chou
  • RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20230240156
    Abstract: A resistive memory device includes a bottom electrode, a top electrode and a resistance changing element. The top electrode is disposed above and spaced apart from the bottom electrode, and has a downward protrusion aligned with the bottom electrode. The resistance changing element covers side and bottom surfaces of the downward protrusion.
    Type: Application
    Filed: January 21, 2022
    Publication date: July 27, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Der CHIH, Wen-Zhang LIN, Yun-Sheng CHEN, Jonathan Tsung-Yung CHANG, Chrong-Jung LIN, Ya-Chin KING, Cheng-Jun LIN, Wang-Yi LEE
  • SEMICONDUCTOR DEVICE AND OPERATION METHOD THEREOF
    Publication number: 20230236929
    Abstract: A semiconductor device includes an error correction code circuit and a register circuit. The error correction code circuit is configured to generate first data according to second data. The register circuit is configured to generate reset information according to a difference between the first data and the second data, for adjusting a memory cell associated with the second data. A method is also disclosed herein.
    Type: Application
    Filed: March 14, 2023
    Publication date: July 27, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Zheng-Jun LIN, Pei-Ling TSENG, Hsueh-Chih YANG, Chung-Cheng CHOU, Yu-Der CHIH
  • LIGHT SENSING MODULE AND ELECTRONIC DEVICE USING THE SAME
    Publication number: 20230228620
    Abstract: A light sensing module includes a substrate, a light sensing unit, a first light-transmissive component, and a light shielding layer. The light sensing unit is disposed on the substrate to sense an intensity of a working light beam, and has an upper light receiving surface and a lateral surface perpendicular to the upper light receiving surface. The first light-transmissive component covers the light sensing unit, and has a first refractive index between a refractive index of the light sensing unit and a refractive index of air. The light shielding layer surrounds the lateral surface and is covered by the first light-transmissive component.
    Type: Application
    Filed: March 21, 2023
    Publication date: July 20, 2023
    Inventors: BO-JHIH CHEN, ZI-JUN LIN, KUO-MING CHIU, YUNG-CHANG JEN, MENG-SUNG CHOU, CHANG-HUNG HSIEH
  • ORGANOMETALLIC COMPLEX COATING SOLUTION AND NEAR INFRARED ABSORPTION FILM
    Publication number: 20230227669
    Abstract: Provided are an organometallic complex coating solution and a near-infrared absorption film, including an organometallic complex, a phosphorus-containing dispersant, and optical resin. The present disclosure greatly reduces the temperature and time of the film-forming process by formulating components of the organometallic complex coating solution.
    Type: Application
    Filed: January 17, 2023
    Publication date: July 20, 2023
    Inventors: Feng-Ling WU, Shih-Song CHENG, Tang-Hao YANG, Tzu-Ling CHAO, Bo-Xun ZHU, Hsing-Hui LIN, Kuo-Chen LI, Chang-Jun LIN
  • Memory device and manufacturing method thereof
    Patent number: 11707003
    Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a device substrate, a resistance variable layer and a top electrode. The bottom electrode is disposed on the device substrate. The resistance variable layer is disposed on the bottom electrode. The top electrode is disposed on the resistance variable layer. The bottom electrode is formed with a tensile stress, while the top electrode is formed with a compressive stress.
    Type: Grant
    Filed: January 4, 2021
    Date of Patent: July 18, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chich-Neng Chang, Da-Jun Lin, Shih-Wei Su, Fu-Yu Tsai, Bin-Siang Tsai
  • VEHICLE OCCUPANT CLASSIFICATION USING RADAR POINT CLOUD
    Publication number: 20230219578
    Abstract: A system comprises a computer having a processor and a memory, the memory storing instructions executable by the processor to access sensor data from one or more imaging radar sensors of a vehicle, identify, based on the sensor data, a radar point cloud corresponding to an occupant of the vehicle, analyze the radar point cloud to determine an occupant classification of the occupant, determine an operating parameter for a feature of the vehicle based on the occupant classification, and implement the operating parameter for the feature.
    Type: Application
    Filed: January 7, 2022
    Publication date: July 13, 2023
    Applicant: Ford Global Technologies, LLC
    Inventors: Jun Lin, Jialiang Le