Abstract: Programming data in memory is described herein. An example apparatus includes an array of memory cells having a plurality of access lines to which the cells are coupled, and a processing device that performs a program operation on the array, including programming data to be stored in one page of cells of the array to the cells of the array coupled to a first one of the access lines, programming additional data to be stored in that page to the cells of the array coupled to a second one of the access lines adjacent to the first one of the access lines, sensing the data programmed to the cells of the array coupled to the first one of the access lines, and programming data to be stored in two pages of cells of the array to the cells of the array coupled to the first one of the access lines.

Abstract: Aspects of the present disclosure configure a system component, such as memory sub-system controller, to detect read errors in one or more memory cells using a plurality of read thresholds. The controller selects, for inspection, a target valley of a plurality of valleys associated with an individual memory component of the set of memory components. The controller reads the target valley using a first read threshold to obtain a first set of data and reads the target valley using a second read threshold to obtain a second set of data. The controller compares the first set of data to the second set of data and performs one or more memory operations on the target valley in response to comparing the first set of data to the second set of data.

Abstract: In some implementations, a memory device may receive a program command instructing the memory device to program host data to a word line associated with a memory. The memory device may determine a program erase cycle (PEC) count associated with the word line. The memory device may determine, based on the PEC count, a selected program scheme to be used to program the host data to the word line, wherein the selected program scheme is one of a single-fine program scheme or a multi-fine program scheme. The memory device may execute the program command by performing the selected program scheme.

Abstract: Devices, methods, and systems for performing corrective sense operations in memory are described herein. An example apparatus includes a memory component including a plurality of groups of memory cells, and a processing device coupled to the memory component and configured to perform a sense operation on the plurality of groups of memory cells, perform a corrective sense operation on a first one of the plurality of groups of memory cells using a corrective value, and perform the corrective sense operation on a second one of the plurality of groups of memory cells using the corrective value.

Abstract: Apparatus and methods are disclosed, including an apparatus that includes a set of memory components of a memory sub-system. The set of memory components includes a processing device that initiates a corrective read (CR) operation on a set of memory components. The set of memory components includes a pillar that includes a channel and a plurality of transistors. The processing device applies a charge to a first word line (WL) comprising a first transistor of a plurality of transistors to neutralize charges in the channel and senses a charge distribution of a second WL comprising a second transistor of the plurality of transistors adjacent to the first transistor based on the charge applied to the first WL that neutralized the charges in the channel.

Abstract: This application discloses a memory error prediction method and apparatus, and a device. After memory error data is obtained, a prediction area affected by a memory error and a time range in which the memory error occurs in the prediction area are determined based on time and space information that reflects the memory error and a memory physical structure. In this way, a location at which the error occurs in the memory and time at which the error occurs in the memory are determined based on the memory error data, and a potential risk area affected by the memory error and a time range in which the error occurs in the potential risk area are deeply analyzed from a perspective of a hardware structure with reference to the connection relationship that is between the memory cells and that is indicated by the memory physical structure.

Abstract: An apparatus disclosed herein comprises: a plurality of memory cells and a control circuit coupled to the plurality of memory cells. The control circuit is configured to: erase a block; verify, using a first erase verify level, that the block was properly erased; verify, using a second erase verify level, that the block was properly erased; determine whether there are any mismatches in a plurality of verify statuses between neighboring wordlines of the block from verifying the block using the second erase verify level; and identify, based on the determination, whether the block has failed.

Abstract: A system includes a memory device; and a processing device, operatively coupled to the memory device, the processing device to perform operations including: receiving a request to perform a read operation, the request identifying a set of memory cells in a portion of a memory device; determining a first temperature of the set of memory cells, wherein the first temperature is associated with a first error handing operation of an error handling flow directed to the set of memory cells; determining an offset value to be applied to a temperature compensation coefficient of a parameter of a set of parameters associated with the set of memory cells, wherein the offset value is associated with a temperature range comprising the first temperature; determining a second temperature of the set of memory cells, wherein the second temperature is associated with a second error handling operation following the first error handing operation of the error handling flow directed to the set of memory cells; and responsive to det

Abstract: A processing device analyzes one or more property and capability characteristics of a plurality of memory devices produced in a development process executed by a memory device development system and identifies respective subsets of the plurality of memory devices having property and capability characteristics that meet respective standards associated with a plurality of different use cases. The processing device further allocates the respective subsets to groups of memory devices corresponding to the different use cases.

Abstract: Aspects of the present disclosure configure a memory sub-system controller to selectively adjust a program pulse for different word line groups of a memory sub-system. The controller receives a request to program data to an individual memory component of a set of memory components. The controller determines that a program erase count (PEC) associated with the individual memory component transgresses a threshold value. The controller, in response to determining that the PEC associated with the individual memory component transgresses the threshold value, selectively adjusts a predetermined program voltage (Vpgm) associated with a subset of word lines (WLs) of the individual memory component based on whether the subset of WLs is associated with an individual WL group (WLG). The controller programs the data to the individual memory component according to the selectively adjusted predetermined Vpgm.

Abstract: The present invention relates to a secondary battery including an electrode assembly; a can that accommodates the electrode assembly; a cap assembly that includes a vent, a current interrupt device (CID) filter positioned under the vent, and a CID gasket positioned at one end of the current interrupt device filter to close an open upper portion of the can; and a gasket that is compressed while interposed between the cap assembly and the upper portion of the can to maintain insulation and sealing between the cap assembly and the can, wherein an outer surface and upper and lower surfaces of the vent of the cap assembly are in close contact with inner and upper surfaces of the gasket, respectively, and a radius of curvature of a portion where the outer surface and the upper surface of an edge portion of the vent meet is 0.3 mm or less.

Abstract: A welding rod fastening method capable of fixing the welding rod perpendicularly to a welding surface to reduce a spattering phenomenon in which fine metal particles scatter around a welded portion due to an incorrect welding angle when welding, and a welding device in which the welding rod is fastened vertically thereby. The welding rod fastening method is a method for fixing a welding rod to a welding rod fixing block having a welding rod housing hole formed therein, and includes inserting the welding rod into a welding rod housing hole of the welding rod fixing block, and fastening fixing screws to spaces on both sides of the welding rod housing hole on the basis of the welding rod to tighten the welding rod housing hole. The fixing screws fastened to the spaces on both sides of the welding rod housing hole are tightened in tightening directions that are opposite to each other.

Abstract: A system having a processing device operatively coupled with a memory device to perform the following operations: responsive to detecting a triggering event, measuring a temperature of the memory device to obtain a suspend temperature value, enabling a suspend temperature flag to indicate that temperature input for a step of an error handling operation is based on the suspend temperature value. Updating an operating temperature with the suspend temperature value. Determining, using a data structure which maps temperatures to read level offsets, a read level offset for the step of the error handling operation, based on the operating temperature. Causing the step of the error handling operation to be performed on a set of cells using a read level value based on the read level offset and a base read level, an disabling the suspend temperature flag.

Abstract: Apparatus and methods are disclosed, including an apparatus that includes a set of memory components of a memory sub-system. The set of memory components includes a processing device that initiates a corrective read (CR) operation on a set of memory components. The set of memory components includes a pillar that includes a channel and a plurality of transistors. The processing device applies a charge to a first word line (WL) comprising a first transistor of a plurality of transistors to neutralize charges in the channel and senses a charge distribution of a second WL comprising a second transistor of the plurality of transistors adjacent to the first transistor based on the charge applied to the first WL that neutralized the charges in the channel.

Abstract: The memory device includes a control circuitry that is communicatively coupled to memory cells are arranged in a plurality of word lines. The control circuitry is configured to perform a first programming pass on a selected word line. The first programming pass includes a plurality of programming loops, each of which includes the application of a programming pulse (Vpgm). The programming pulse voltage is increased between programming loops of the first programming pass by a step size. The step size is a first step size between two programming loops of the first programming pass and is a second step size that is different than the first step size between two other programming loops of the first programming pass. The control circuitry is also configured to perform a second programming pass to further program the memory cells of the selected word line to the plurality of data states.

Abstract: A temperature sensing device and a calibration method of the temperature sensing device are provided. Based on different conditions, the temperature sensing device generates a first digital sensing value and a second digital sensing value corresponding to an ambient temperature. The temperature sensing device generates a first sensing result value according to the first digital sensing value, a first compensation value, and a sensing difference value between the first digital sensing value and the second digital sensing value, and generates a second sensing result value according to the second digital sensing value, a second compensation value, and the sensing difference value. The temperature sensing device obtains an error from the first sensing result value and the second sensing result value according to a first reference value and a second reference value. The temperature sensing device calibrates the first compensation value according to the error.

Abstract: The memory device that includes a memory block memory cells arranged in word lines. A controller is in electrical communication with the memory cells and is configured to program the memory cells to a first set of data states in a first programming pass and then to a greater second set of data states in a second programming pass. During programming of a first set of memory cells in at least one of the first and second programming passes, the controller is further configured to determine programming statuses of a second set of memory cells that is adjacent the first set of memory cells. The controller is further configured to read the first set of memory cells using a read voltage that is adjusted from a base read voltage based on the determined programming statuses of the second set of memory cells.

Abstract: An apparatus that comprises a plurality of memory cells and a control circuit coupled to the plurality of memory cells is disclosed. The control circuit is configured to perform a read operation. The read operation includes determining a read condition of a memory cell, where the read condition is of a plurality of read conditions and determining a boost timing for the memory cell, where the boost timing corresponds to the read condition.

Abstract: A controller is configured to program the memory cells to a first set of data states in a first programming pass and to a greater second set of data states in a second programming pass. The controller performs the first programming pass on the first word line. The controller then repeats the process of programming a portion of another word line and then comparing an upper tail of an erased data state of the first word line to a critical voltage until the upper tail of the erased data state of the first word line exceeds the critical voltage by a threshold. In response to the upper tail of the erased data state exceeding the critical voltage by the threshold, the controller then alternates between the first and second programming passes until the first programming pass is completed on the remaining word lines of the memory block.

Abstract: The present invention provides an electrode running roller which causes an electrode sheet in which a current collector is coated with an electrode active material to run, wherein the running roller includes a cylindrical section, and a tapered section extending from one end portion of the cylindrical section, and the tapered section has a shape in which an outer diameter gradually decreases toward a distal end portion of the tapered section.