Abstract: Proposed is a composition for preventing, ameliorating or treating acne symptoms including a Sesamum indicum seed extract, a Quercus robur bark extract and a Houttuynia cordata extract as active ingredients, and at least one natural substance of a Cirsium japonicum extract and Thuja orientalis as an additional active ingredient. The composition for preventing, ameliorating or treating acne symptoms contains, as active ingredients, natural extracts having the effects of prevention, amelioration or treatment of acne by exhibiting high antibacterial activity against C. acnes, which is a strain causative of acne.

Abstract: Proposed is a composition for preventing, ameliorating or treating acne symptoms including a Sesamum indicum seed extract, a Quercus robur bark extract and a Houttuynia cordata extract as active ingredients, and at least one natural substance of a Cirsium japonicum extract and Thuja orientalis as an additional active ingredient. The composition for preventing, ameliorating or treating acne symptoms contains, as active ingredients, natural extracts having the effects of prevention, amelioration or treatment of acne by exhibiting high antibacterial activity against C. acnes, which is a strain causative of acne.

Abstract: Apparatuses and techniques are described for performing an erase operation for a set of memory cells, where the erase operation includes an all word line erase phase to save time followed by an odd-even word line erase phase to improve data retention. A transition to the odd-even word line erase phase can be triggered when the memory cells pass a first verify test which indicates that the threshold voltages of the memory cells have decreased below a first voltage. Or, the transition can be triggered when a threshold number of erase-verify iterations have been performed. The erase operation may be completed when the memory cells pass a second verify test which indicates that the threshold voltages of the memory cells have decreased below a second voltage which is less than the first voltage.

Abstract: Apparatuses and techniques are described for performing an erase operation for a set of memory cells, where the erase operation includes an all word line erase phase to save time followed by an odd-even word line erase phase to improve data retention. A transition to the odd-even word line erase phase can be triggered when the memory cells pass a first verify test which indicates that the threshold voltages of the memory cells have decreased below a first voltage. Or, the transition can be triggered when a threshold number of erase-verify iterations have been performed. The erase operation may be completed when the memory cells pass a second verify test which indicates that the threshold voltages of the memory cells have decreased below a second voltage which is less than the first voltage.

Abstract: The present invention discloses a method of manufacturing an electrode for a secondary battery by using a single process to notch and cut a unit electrode from an electrode sheet. The method for manufacturing electrodes for a secondary battery includes supplying an electrode sheet in a moving direction (MD), wherein the electrode sheet has a plurality of coated portions and uncoated portions alternately arranged along the MD, wherein each coated portion has an electrode active material, and each uncoated portion does not have an electrode active material; and cutting the uncoated portions to form the plurality of unit electrodes.

Abstract: A method and system for fusing image data. The method may include obtaining a first volume image and a second volume image. The method may further include casting a plurality of rays through at least one of the first volume image or the second volume image. Each of the plurality of rays may correspond to a pixel of an image to be displayed. For each of at least a portion of the plurality of rays, the at least one processor may further be directed to cause the system to set a series of sampling positions along the ray. The method may further include selecting a reference position from the series of sampling positions. The method may further include determining fusion data of the ray. The method may further include determining a pixel value of a pixel of the image to be displayed that corresponds to the ray.

Abstract: Example techniques that mitigate against memory hole shorts during an erase operation for memory cells in a string include an example method in which, during an erase operation, erase pulses are applied to the word lines of the memory string and terminated at different times based. In some instances, the erase pulses applied to the word lines of the memory string are terminated based on the temperature of the memory cells of the memory string. In further implementations, the erase pulses applied to the word lines of the memory string are boosted for different times depending on the location of the word line along the memory string during the erase operation.

Abstract: A method of programming a NAND flash memory device includes: a programming voltage generation circuit applying an initial programming voltage pulse to a predetermined page of NAND flash memory; a controller verifying a plurality of verification levels of the predetermined page, the plurality of verification levels being less than a first-state verification voltage of verifying a lowest program state of the predetermined page; the controller determining a magnitude of a subsequent programming voltage pulse upon one of the plurality of verification levels of the predetermined page passing a verification; and the programming voltage generation circuit applying the subsequent programming voltage pulse to the predetermined page.

Abstract: A method and system for fusing image data. The method may include obtaining a first volume image and a second volume image. The method may further include casting a plurality of rays through at least one of the first volume image or the second volume image. Each of the plurality of rays may correspond to a pixel of an image to be displayed. For each of at least a portion of the plurality of rays, the at least one processor may further be directed to cause the system to set a series of sampling positions along the ray. The method may further include selecting a reference position from the series of sampling positions. The method may further include determining fusion data of the ray. The method may further include determining a pixel value of a pixel of the image to be displayed that corresponds to the ray.

Abstract: A method of programming a NAND flash memory device includes: a programming voltage generation circuit applying an initial programming voltage pulse to a predetermined page of NAND flash memory; a controller verifying a plurality of verification levels of the predetermined page, the plurality of verification levels being less than a first-state verification voltage of verifying a lowest program state of the predetermined page; the controller determining a magnitude of a subsequent programming voltage pulse upon one of the plurality of verification levels of the predetermined page passing a verification; and the programming voltage generation circuit applying the subsequent programming voltage pulse to the predetermined page.

Abstract: Embodiments of three-dimensional (3D) memory devices with a 3D NAND memory array having a plurality of pages and an on-die data buffer coupled to the memory array on a same chip and configured to buffer a plurality of batches of program data between a host and the memory array. The on-die data buffer may include SRAM cells. The 3D memory device also includes a controller coupled to the on-die data buffer on the same chip. The controller may be configured to receive control instructions for performing a first pass program and a second pass program on memory cells in a page. The controller may also be configured to buffer, in the on-die data buffer, first program data for a first pass program and second program data for a second pass program from a host and retrieve the first program data from the on-die data buffer.

Abstract: The present disclosure provides a system and method for medical image visualization. The method may include obtaining original image data of a subject, the original image data including a first region of interest (ROI) and a second ROI. The method may also include generating first image data associated with the first ROI according to a first instruction, and causing the first ROI to be displayed on a display device as a first image based on the first image data. The method may further include generating, according to a second instruction, second image data corresponding to a target region that includes the second ROI, updating the first image data based on the second image data, and causing the second ROI to be displayed on the display device as a second image based on the updated first image data.

Abstract: Example techniques that mitigate against memory hole shorts during an erase operation for memory cells in a string include an example method in which, during an erase operation, erase pulses are applied to the word lines of the memory string and terminated at different times based. In some instances, the erase pulses applied to the word lines of the memory string are terminated based on the temperature of the memory cells of the memory string. In further implementations, the erase pulses applied to the word lines of the memory string are boosted for different times depending on the location of the word line along the memory string during the erase operation.

Abstract: A method and system for fusing image data. The method may include obtaining a first volume image and a second volume image. The method may further include casting a plurality of rays through at least one of the first volume image or the second volume image. Each of the plurality of rays may correspond to a pixel of an image to be displayed. For each of at least a portion of the plurality of rays, the at least one processor may further be directed to cause the system to set a series of sampling positions along the ray. The method may further include selecting a reference position from the series of sampling positions. The method may further include determining fusion data of the ray. The method may further include determining a pixel value of a pixel of the image to be displayed that corresponds to the ray.

Abstract: The present invention discloses a method of manufacturing an electrode for a secondary battery by using a single process to notch and cut a unit electrode from an electrode sheet. The method for manufacturing electrodes for a secondary battery includes supplying an electrode sheet in a moving direction (MD), wherein the electrode sheet has a plurality of coated portions and uncoated portions alternately arranged along the MD, wherein each coated portion has an electrode active material, and each uncoated portion does not have an electrode active material; and cutting the uncoated portions to form the plurality of unit electrodes.

Abstract: Systems, apparatuses, and methods are provided that refresh data in a memory. Data is programmed into the memory. After which, part or all of the data may be refreshed. The refresh of the data may be different from the initial programming of the data in one or more respects. For example, the refresh of the data may include fewer steps than the programming of the data and may be performed without erasing a section of memory. Further, the refresh of the data may be triggered in one of several ways. For example, after programming the data, the data may be analyzed for errors. Based on the number of errors found, the data may be refreshed.

Abstract: A method of preparing an electrode for an electrode assembly having a structure in which electrodes are laminated, including: (i) a process of coating an electrode mixture on at least one surface of a metal sheet so that n (n?2) electrode mixture coated layer lines are formed between non-coated portions parallel to a first direction; (ii) a process of rolling the metal sheet sequentially from a first electrode mixture coated layer line to an nth electrode mixture coated layer line using a rolling roller rotated in a second direction perpendicular to the first direction; (iii) a process of slitting the rolled metal sheet at least twice in the second direction to prepare electrode plate base materials having n electrode mixture coated layers formed thereon; and (iv) a process of cutting each of the electrode plate base materials in the first direction to obtain n single sheet electrodes.

Abstract: Techniques are provided for improving the accuracy of read operations of memory cells, where the threshold voltage of the memory cells can shift depending on the coupled up state of the word lines. In one approach, for a read operation, a representative word line voltage in a block is detected and a corresponding set of read voltages is selected. In another approach, a pre-read voltage pulse is applied to a selected word line in response to a read command, just prior to reading the selected cells. In another approach, a voltage pulse is periodically applied to each word line in a block to provide the word lines in a coupled up state. In another approach, a soft erase is performed after a read operation to prevent coupling up of the word lines.

Abstract: Disclosed herein is a non-volatile storage system with memory cells having a charge storage region that may be configured to store a higher density of charges (e.g., electrons) in the middle than nearer to the control gate or channel. The charge storage region has a middle charge storage material that stores a higher density of charges than two outer charge storage materials that are nearer to the control gate or channel, in one aspect. The charge storage region of one aspect has oxide regions between the middle charge storage material and the two outer charge storage materials. The oxide regions of one embodiment are thin (e.g., less than one nanometer) such that during operation charges may easily pass through the oxide regions. The non-volatile memory cell programs quickly and has high data retention.

Abstract: Techniques are provided for improving the accuracy of read operations of memory cells, where the threshold voltage of the memory cells can shift depending on the coupled up state of the word lines. In one approach, for a read operation, a representative word line voltage in a block is detected and a corresponding set of read voltages is selected. In another approach, a pre-read voltage pulse is applied to a selected word line in response to a read command, just prior to reading the selected cells. In another approach, a voltage pulse is periodically applied to each word line in a block to provide the word lines in a coupled up state. In another approach, a soft erase is performed after a read operation to prevent coupling up of the word lines.