Abstract: A track beam includes a main component and a guide component. The main component includes a top plate, a bottom plate, and a web plate. The bottom plate is disposed below the top plate, and the web plate is connected between the top plate and the bottom plate. The guide component includes a guide plate and a connecting structure. The guide plate is disposed between the top plate and the bottom plate. The guide plate includes a planar plate structure extending in a longitudinal direction and is spaced apart from the web plate in a transverse direction. The connecting structure is connected between the main component and the guide plate such that the guide plate is connected to the main component through the connecting structure.

Abstract: A rib telescopic mechanism for an outdoor sunshade is provided, includes: a mounting holder fixedly connected to a stem and ribs, a screw reducing motor, a nut support and a connecting rod; the screw reducing motor is fixed to a lower end of the mounting holder; a bottom of the mounting holder is defined with a through hole, and a stem of the screw reducing motor being passed through the through hole; and the screw is threaded with a nut support; the mounting holder is defined with mounting grooves that cooperate with the ribs at intervals along a circumference direction, when the nut support moves down along the stem, the ribs open; and when the nut support moves upward along the stem, the ribs close. Thus realizing the automatic opening and closing of the ribs, and no manual operation is required, with simple structure, convenient operation and high stability.

Abstract: An outdoor sunshade is provided. The outdoor sunshade includes a base, a stem, ribs and an umbrella surface, a bottom rod, a supporting rod and a top rod; the supporting rod is rotatably connected to bottom rod; a horizontal rotation driving member is provided inside the bottom rod; the top rod is connected to a upper end of the supporting rod, a rotating axis of the top rod is perpendicular to the central axis of the supporting rod; the top rod is provided with a vertical rotation driving member; the top rod is provided with a driving mechanism; a light intensity sensor, the horizontal rotation driving member, and the vertical rotation driving member are electrically connected to the controller. The intelligent outdoor sunshade can open or close the umbrella surface automatically, and adjust the sunshade angle intelligently, without the need of manual, resulting in a higher degree of intelligence.

Abstract: Provided are a method and apparatus for determining a blockage of a filter of a clothes dryer and a clothes dryer. The clothes dryer includes a motor. The method includes following steps. An actual rotational speed of the motor is acquired, and an electrical parameter corresponding to a rotational speed range to which the actual rotational speed belongs is determined as a first threshold corresponding to the actual rotational speed; an actual clothes volume in the clothes dryer is acquired, and the first threshold is corrected according to a correction coefficient corresponding to a clothes volume range to which the actual clothes volume belongs so that a second threshold is obtained; and an actual electrical parameter of the motor is acquired, and when it is detected that the actual electrical parameter is less than the second threshold, it is determined that the filter of the clothes dryer is blocked.

Abstract: The present disclosure provides a real-person identity verification method and system for a non-natural person entity operator. The method includes: receiving a service request of the non-natural person entity operator; obtaining personal identity information of the non-natural person entity operator based on the service request, to perform personal identity verification; obtaining and recognizing a document photo of a non-natural person entity in response to that personal identity verification succeeds, to perform non-natural person entity identity verification; in response to that the non-natural person entity identity verification succeeds, confirming that the non-natural person entity operator obtains authorization from the non-natural person entity; and performing a risk release on the service request based on the authorization confirmation.

Abstract: A method for manufacturing a semiconductor structure comprises: forming a stacked structure on a base having an array area and a peripheral area; forming a first mask layer on the stacked structure, in which the first mask layer corresponding to the array area has a first pattern; ion doping the first mask layer on the array area to obtain a doped first mask layer; and etching the stacked structure through the doped first mask layer to transfer the first pattern to the stacked structure.

Abstract: The present disclosure provides a solder ribbon processing mechanism, comprising a plurality of first solder ribbon clamping assemblies, a plurality of second solder ribbon clamping assemblies, a plurality of first solder ribbon cutters, and a plurality of second solder ribbon cutters. The plurality of first solder ribbon clamping assemblies cooperate to clamp all odd numbered solder ribbons of a plurality of solder ribbons, and the first solder ribbon cutters are configured for cutting off all the odd numbered solder ribbons at corresponding positions, so as to obtain a plurality of first solder ribbon groups. The plurality of second solder ribbon clamping assemblies cooperate to clamp all second numbered solder ribbons of a plurality of solder ribbons, and the second solder ribbon cutters are configured for cutting off all the even numbered solder ribbons at corresponding positions, so as to obtain a plurality of second solder ribbon groups.

Abstract: Embodiments provide a method for fabricating an array structure of a columnar capacitor and a semiconductor structure. In the method, before a mask layer is removed, a photoresist layer is filled to adjust a thickness of the mask layer in a peripheral region and a thickness of the mask layer in an array region to be equal, thereby preventing a top support layer from being worn due to impacts of different thicknesses of the mask layers on a thickness of the top support layer. In addition, in the method, a third sacrificial layer and an auxiliary layer are further formed to perform dual protection on the top support layer, thereby preventing the top support layer from being thinned in subsequent processes, to increase support strength of the top support layer, thereby further preventing the columnar capacitor from tilting due to insufficient support strength of the top support layer.

Abstract: Embodiments provide a method for fabricating a semiconductor device and the semiconductor device. The method includes: providing a semiconductor substrate having a first region and a second region; forming an initial mask layer on an upper surface of the substrate; patterning the initial mask layer, forming a first pattern mask having a first height on the first region, and forming a second pattern mask having a second height on the second region, where a pattern density of the first pattern mask is greater than a pattern density of the second pattern mask, and the first height is greater than the second height; and etching the substrate based on the first pattern mask and the second pattern mask, transferring a pattern of the first pattern mask to the first region, and transferring a pattern of the second pattern mask to the second region.

Abstract: The present disclosure provides a manufacturing method of a semiconductor structure and a semiconductor structure. The manufacturing method includes: providing a substrate, where the substrate includes a complete die region and an incomplete die region; forming a stack on the substrate, where the stack includes sacrificial layers and supporting layers; forming a first photoresist layer on the stack; exposing the first photoresist layer, and developing to remove the first photoresist layer on the incomplete die region; and etching the stack by using the first photoresist layer on the complete die region as a mask.

Abstract: The present application relates to the technical field of manufacturing semiconductor, and in particular to a method of manufacturing semiconductor structure and a semiconductor structure. The method of manufacturing semiconductor structure includes: forming a conductive layer on a substrate, and removing part of the conductive layer to form a contact structure composed of a plurality of contact pads; where each of the contact pads is electrically connected to a transistor structure on the substrate; and, after the contact pads are formed, removing residual core on top ends of the contact pads away from the substrate by dry etching.

Abstract: Embodiments provide a method for fabricating an array structure of a columnar capacitor and a semiconductor structure, relating to the field of semiconductor manufacturing technology. In the method, before a mask layer is removed, a thickness of the mask layer in the peripheral region is first adjusted to be equal to a thickness of the mask layer in the array region, thereby avoiding damage to a top support layer caused by different thicknesses of the mask layer. Moreover, in the method, a thickness of the top support layer is increased by means of a supplementary support layer, to increase support strength of the top support layer, thereby further preventing occurrence of tilt of the columnar capacitor due to insufficient support strength of the top support layer.

Abstract: The present disclosure relates to the technical field of semiconductors, and provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a substrate; a bit line located on the substrate; and a support layer located on the substrate, wherein the support layer includes a first support segment and a second support segment, the first support segment and the second support segment are both connected to the bit line, and the bit line is located between the first support segment and the second support segment.

Abstract: The present disclosure provides a manufacturing method of a semiconductor structure, including: an insulating layer includes a first dielectric layer and a second dielectric layer, a protective layer covers an upper surface of the second dielectric layer and a bottom and sidewalls of the first trench; removing part of the protective layer to expose at least part of a surface of the second dielectric layer; removing the second dielectric layer by a first wet etching process, the first wet etching process has a first etch selectivity of a material of the second dielectric layer to that of the first dielectric layer; and removing the protective layer by a second wet etching process, the second wet etching process has a second etch selectivity of a material of the protective layer to that of the first dielectric layer, and the second etch selectivity is greater than the first etch selectivity.

Abstract: Provided is a preparation method of a semiconductor device, including the following steps: providing a substrate and forming a mask layer with a plurality of first windows on the substrate; forming a dielectric layer, the dielectric layer at least covering sidewalls of the first windows; forming a first photoresist material layer, the first photoresist material layer covering the dielectric layer and the mask layer and filling the first windows; patterning the first photoresist material layer to form a patterned first photoresist layer which exposes a top surface of the dielectric layer; by using the first photoresist layer and the mask layer as masks, removing the dielectric layer to form second windows; and removing part of the substrate along the second windows to form a patterned substrate.

Abstract: An embodiment of the application provides a method for forming a semiconductor structure. The semiconductor structure includes a first region and a second region. The method includes the following steps: providing a base, an insulating layer, and a mask layer that are stacked in sequence, where the first region has at least one trench penetrating the mask layer and the insulating layer, and the mask layer has an upper surface in the second region higher than that in the first region; forming a first protection layer, where an upper surface and a sidewall of the mask layer in the first region are covered with the first protection layer; after the first protection layer is formed, removing the mask layer in the second region; subsequent to removal of the mask layer in the second region, removing the first protection layer; and removing the mask layer in the first region.

Abstract: A method for manufacturing a mask structure includes: patterning a sacrificial layer and a second dielectric layer, so as to form pattern structures each including a first pattern and a second pattern, and a width of a lower portion of the pattern structures is less than a width of a upper portion of the pattern structures; forming an initial mask pattern on sidewalls of each of the plurality of pattern structures; filling a first filling layer between adjacent initial mask patterns located on the sidewalls of different pattern structures; removing the second patterns and the initial mask pattern located on sidewalls of each of the plurality of second patterns; removing the first filling layer and the first patterns, so as to form first mask patterns; and forming second mask patterns on the first mask patterns.

Abstract: A method for manufacturing a semiconductor structure and a semiconductor structure are provided. The method for manufacturing a semiconductor structure includes: forming a conductive layer, a protective layer, and a mask layer in sequence on the substrate, the mask layer including a first pattern facing the first region and a second pattern facing the second region; forming a restriction pattern located in the second region by etching the protective layer using the mask layer as a mask; and forming contact pads located in the first region and connecting wires located in the second region on the conductive layer by etching the conductive layer using the mask layer as a mask.

Abstract: This application provides an authentication credential protection method and system. The protection method includes the following steps: generating authentication secret information based on a lock screen password and hardware secret information of a first device; randomly generating, by the first device, a symmetric key, and using the symmetric key as an encryption key for the authentication secret information; splitting the encryption key into at least two first key segments by using a multi-party data splitting algorithm, where one of the at least two first key segments is stored on the first device; and sending, by the first device, another first key segment to a trusted device. In the foregoing technical solution, the authentication secret information is generated by using the lock screen password and the hardware secret information, increasing information complexity. In addition, different trusted devices are used to store the split key segments, improving security of the encryption key.

Abstract: A mask structure, a semiconductor structure and methods for manufacturing the same are disclosed. The method for manufacturing the mask structure includes: forming a pattern transfer layer, a first etching stop layer, a first sacrificial layer and a first hard mask layer sequentially stacked from bottom to top; patterning the first sacrificial layer and the first hard mask layer, to obtain a first sacrificial pattern, the first sacrificial pattern exposing the first etching stop layer; forming a first initial mask pattern on side walls of the first sacrificial pattern; removing the first sacrificial pattern; removing, based on the first initial mask pattern, a part of the first etching stop layer of which a top surface being exposed; removing the first initial mask pattern, and using the remaining part of the first etching stop layer on the upper surface of the pattern transfer layer as a first mask pattern.