Abstract: The present disclosure discloses a capacitor structure and its formation method and a memory. The method includes: providing a substrate; forming an electrode support structure on the substrate in a stacking fashion, wherein the electrode support structure includes at least a first support layer on its top, a capacitor hole is formed at intervals within the electrode support structure and extends upwards in a direction perpendicular to a surface of the substrate; forming, within the capacitor hole, an electrode post and an electrode layer extending from the electrode post to the upper surface of the first support layer; removing the electrode layer; removing the first support layer; forming a dielectric layer on the top of the electrode support structure, wherein the dielectric layer covers the top of the electrode post, and an outer peripheral wall of the top of the electrode post is connected with the dielectric layer.

Abstract: A support stand for photography includes a support main body having supporting ends and a mounting end and an adapting device provided at the mounting end. The supporting ends are formed on supporting legs of the support main body. The supporting legs can be unfolded to allow two adjacent supporting ends to move away from each other. The supporting legs can be folded to allow the two adjacent supporting ends to move close to each other and form a gap between two adjacent supporting legs. The adapting device includes a fixed seat provided with an adapting structure for mounting a first photographic equipment and a clamping seat configured to clamp a second photographic equipment. The clamping seat is rotatably connected to the fixed seat. The clamping seat can rotate toward a side where the supporting ends are located to be accommodated in the gap between the two adjacent supporting legs.

Abstract: Provided are a method and apparatus for determining a blockage of a filter of a clothes dryer and a clothes dryer. The clothes dryer includes a motor. The method includes following steps. An actual rotational speed of the motor is acquired, and an electrical parameter corresponding to a rotational speed range to which the actual rotational speed belongs is determined as a first threshold corresponding to the actual rotational speed; an actual clothes volume in the clothes dryer is acquired, and the first threshold is corrected according to a correction coefficient corresponding to a clothes volume range to which the actual clothes volume belongs so that a second threshold is obtained; and an actual electrical parameter of the motor is acquired, and when it is detected that the actual electrical parameter is less than the second threshold, it is determined that the filter of the clothes dryer is blocked.

Abstract: Dental appliances and methods for expanding the lower dental arch. The appliances may be removable mandibular expander devices for efficient arch expansion while being comfortable to wear and easy to use. The appliances may include a lingual portion that is shaped and sized to apply an expansion force to lingual surfaces of one or more teeth. The shape and size of the lingual portion may be configured to distribute the forces among posterior and/or anterior teeth.

Abstract: The present invention discloses a extra thick hot rolled H section steel and a production method therefor. The extra thick hot rolled H section steel contains, by mass, the following chemical components: 0.04-0.11% of C, 0.10-0.40% of Si, 0.40-1.00% of Mn, 0.40-1.00% of Cr, 0.10-0.40% of Cu, 0.020-0.060% of Nb, 0.040-0.100% of V, 0.010-0.025% of Ti, 0.010-0.030% of Al, 0.0060-0.0120% of N, not more than 0.015% of P, not more than 0.005% of S, not more than 0.0060% of O, and the balance Fe and trace residual elements, wherein 0.090%?Nb+V+Ti?0.170%, 6.5?(V+Ti)/N?10.5, and 0.30%?CEV?0.48%. The extra thick hot rolled H section steel has a flange thickness of 90 mm-150 mm, has excellent comprehensive mechanical properties, and can well meet the needs for heavy supporting structural parts of high-rise buildings, large squares, bridge structures, etc.

Abstract: The invention provides a method for evaluating deep-buried tunnel blasting parameters, and belongs to the technical field of mine engineering. The method comprises: setting multiple diverse blasting schemes; selecting a plurality of test sections with the same geological characteristics, the number of the test sections corresponding to the number of the blasting schemes; blasting the test sections using the blasting schemes, and obtaining diversified monitoring data of each test section; and comparing the diversified monitoring data to select the optimal blasting schemes for the test sections. According to the method for evaluating the deep-buried tunnel blasting parameters, by implementing different blasting schemes in test sections with the same geological characteristics, diversified monitoring data of the test sections are obtained and compared to select the optimal blasting schemes for the test sections, so as to ensure the safety and quality of blasting excavation of deep-buried tunnels.

Abstract: The method for manufacturing the semiconductor structure includes: providing a substrate, and forming contact holes in the substrate; depositing a metal at a bottom of each contact hole, and performing a reverse sputtering treatment to form a metal layer; in the reverse sputtering treatment, metal atoms or metal ions are sputtered onto at least a part of a side wall of each contact hole; performing a annealing treatment, to cause the substrate reacts with the metal layer to form a metal silicide layer.

Abstract: A seed soaking agent for reducing Cd content of rice and a low-labor intensity and simple method for reducing Cd content of rice are disclosed. The method includes mixing a seed and a seed soaking agent, and soaking the seed, to obtain a soaked seed; sowing the soaked seed, and reaping to obtain rice with a low Cd content, wherein an active ingredient of the seed soaking agent includes a trace element required by plants, the trace element includes selenium element, silicon element, zinc element or iron element, or a mixture of selenium element and iron element, a mixture of selenium element and silicon element, or a mixture of selenium element and zinc element.

Abstract: Novel organometallic complexes having a structure of Formula (I) that are useful in organic light emitting devices are disclosed.

Abstract: A method for manufacturing a semiconductor structure includes: providing a base; forming multiple discrete first mask layers on the base; forming multiple sidewall layers, in which each sidewall layer is configured to encircle one of the first mask layers, and each sidewall layer is connected to closest sidewall layers, the side walls, away from the first mask layers, of multiple connected sidewall layers define initial first vias and each of the initial first vias is provided with chamfers; removing the first mask layers, and each sidewall layer defines a second via; after removing the first mask layers, forming repair layers which are located on the side walls, away from the second vias, of the sidewall layers and fill the chamfers of the initial first vias to form first vias; and etching the base along the first vias and the second vias to form capacitor holes on the base.

Abstract: The present disclosure relates to a networked ecological conservation water-saving system for urban mass green land, comprising 5-9 ecological conservation water-saving devices which are orderly arranged in the urban green land per square meter. The ecological conservation water-saving devices are arranged in a central symmetry manner. Each ecological conservation water-saving device comprises a columnar housing and an infiltrating irrigation unit. A first water storage unit is provided at the center of each infiltrating irrigation unit, and a second water storage unit is provided at the lower part of each first water storage unit. The networked ecological conservation water-saving system further comprises a first water delivery pipe network, a second water delivery pipe network, and a third water delivery pipe network.

Abstract: The present disclosure discloses a method for manufacturing a capacitor, a capacitor array structure and a semiconductor memory. The method for manufacturing a capacitor includes: providing an underlayer; forming a substrate to be etched on the underlayer; enabling a wafer to include a central area and an edge area; forming a first hard mask layer having a first pattern in the central area on the substrate to be etched; using the first hard mask layer as a mask to etch the substrate to be etched, to form capacitor holes; depositing a lower electrode layer; and sequentially forming a capacitor dielectric layer and an upper electrode layer.

Abstract: A method for manufacturing a memory includes: providing a substrate, capacitor contact pads being formed in the substrate; forming a laminated structure on the substrate, the laminated structure including a first laminated structure formed on the substrate and a second laminated structure formed on the first laminated structure; forming first through holes in the second laminated structure; forming a protective layer on side walls of the first through holes, the protective layer in the first through holes enclosing second through holes; and etching the first laminated structure along the second through holes to form third through holes, the third through holes exposing the capacitor contact pads.

Abstract: A capacitor structure and a method of preparing the same are provided. The method includes the followings. A substrate is provided. A stacked layer is formed on the substrate. A plurality of first via holes penetrating through the stacked layer are formed. The first via hole is filled with a conductive material to form a conductive pillar. A plurality of second via holes penetrating through the stacked layer are formed at a preset radius with the conductive pillar as an axis. The second via hole surrounds the conductive pillar circumferentially. The second via hole is filled with the conductive material to form an annular top electrode with a second gear.

Abstract: A laminated capacitor and a method for manufacturing the same are provided. The method includes operations of providing a substrate; forming a first isolation insulation spacer and a plurality of discrete bottom bonding pads on the substrate; forming a sub-capacitor structure on the bottom bonding pads, which comprises a plurality of discrete bottom electrodes, a plurality of discrete top electrodes, and a dielectric medium located between the bottom electrodes and the top electrodes, wherein the plurality of bottom bonding pads are respectively electrically connected with the plurality of bottom electrodes in one-to-one correspondence; and repeatedly performing an operation of forming a connection structure and the sub-capacitor structure for N times on the sub-capacitor structure, such that N connection structures and N+1 sub-capacitor structures are alternately arranged along a direction perpendicular to the substrate, wherein N is an integer greater than or equal to 1.

Abstract: A wearable device includes a case and a detection module. The case includes an inner casing and an outer casing. The inner casing includes a main body and a lateral wall. The main body is an annular structure. The lateral wall is disposed on a lateral side of the main body. The main body has a first installation area, a second installation area and a third installation area. The outer casing is disposed around the inner casing and abuts against the lateral wall, and the outer casing has a first opening. The detection module is disposed inside the case. The detection module includes an energy storage unit, an information transmission unit and an optical identification assembly. The energy storage unit is located on the first installation area. The information transmission unit is located on the second installation area. The optical identification assembly is located on the third installation area.

Abstract: Embodiments provide a method for fabricating an array structure of a columnar capacitor and a semiconductor structure. In the method, before a mask layer is removed, a photoresist layer is filled to adjust a thickness of the mask layer in a peripheral region and a thickness of the mask layer in an array region to be equal, thereby preventing a top support layer from being worn due to impacts of different thicknesses of the mask layers on a thickness of the top support layer. In addition, in the method, a third sacrificial layer and an auxiliary layer are further formed to perform dual protection on the top support layer, thereby preventing the top support layer from being thinned in subsequent processes, to increase support strength of the top support layer, thereby further preventing the columnar capacitor from tilting due to insufficient support strength of the top support layer.

Abstract: A circuit connection apparatus includes a first member and a second member sequentially stacked along a first direction. The first member is conductive. The first member includes a first section, a second section, and a third section. The first section and the second section are spaced apart in the first member. The third section is connected to the first section and the second section separately. The second member includes a boss extending toward the first member. Viewed along the first direction, the boss at least partly overlaps the third section. Along the first direction, the boss and the third section are interspaced with a clearance. The first member and the second member are able to approach each other. The boss is configured to be able to press against and be pressed by the third section to fracture the third section.

Abstract: A track beam includes a main component and a guide component. The main component includes a top plate, a bottom plate, and a web plate. The bottom plate is disposed below the top plate, and the web plate is connected between the top plate and the bottom plate. The guide component includes a guide plate and a connecting structure. The guide plate is disposed between the top plate and the bottom plate. The guide plate includes a planar plate structure extending in a longitudinal direction and is spaced apart from the web plate in a transverse direction. The connecting structure is connected between the main component and the guide plate such that the guide plate is connected to the main component through the connecting structure.