Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

Abstract: Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.

Abstract: The disclosure provides method, apparatus and terminal for page refreshing. The method includes: outputting a preset animation interface within a displayed page when a page refreshing operation is performed, which is a longitudinal bar with a length substantially equal to a width of the displayed page and comprises a preset logo, moving cursors having a plurality of cursor seeds emitted from the preset logo and that move toward the refresh progress bar starting from the preset logo along the length of the longitudinal bar and a refresh progress bar, wherein the refresh progress bar and the preset logo are positioned apart from each other, and a length of the refresh progress bar increases towards the preset logo as the moving cursors arrive at the refresh progress bar; and reducing transparency of the moving cursor to a predetermined value when the length of the refresh progress bar no longer increases.

Abstract: The invention relates to a vehicle lamp which integrates the turn signal light, the side marker light and the headlight comprising: a headlight circuit board, a second circuit board, a reflector panel, a transparent light guide, a mask and a housing, said headlight circuit board is provided with a headlight light source facing said reflector panel, said second circuit board is provided with a second light source facing said transparent light guide, and said transparent light guide is provided with optical stripes for refracting or reflecting said second light source, and said second circuit board and said headlight circuit board are disposed between said reflector panel and said housing, said reflector panel and said transparent light guides are all connected to said mask. The vehicle lamp which integrates the turn signal light, the side marker light and the headlight of the invention has beautiful appearance, light weight and suitable for large-scale promotion and application.

Abstract: A lidar system includes a laser source, a photodetector, an emission lens, a receiving lens, and a processor. The laser source is configured to be translated through a plurality of emission locations, and to emit a plurality of laser pulses therefrom. The emission lens is configured to collimate and direct the plurality of laser pulses towards an object. The receiving lens is configured to focus the portion of each of the plurality of laser pulses reflected off of the object to a plurality of detection locations. The photodetector is configured to be translated through the plurality of detection locations, and to detect the portion of each of the plurality of laser pulses. The processor is configured to determine a time of flight for each of the plurality of laser pulses from emission to detection, and construct a three-dimensional image of the object based on the determined time of flight.

Abstract: The present invention relates to methods and systems for designing gauge patterns that are extremely sensitive to parameter variation, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features. The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variation. The method may also include designing gauges which have more than one test patterns, such that a combined response of the gauge can be tailored to generate a certain response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variation leads to robust performance against random measurement error and/or any other measurement error.

Abstract: The present disclosure provides a computer-implemented method of analyzing variants from a plurality of nucleic acid sequence reads. The method uses a computation pipeline having at least one invariable module and at least one variable module, wherein the variable module depends on a variable parameter. The method includes executing on a processor the steps of receiving the plurality of nucleic acid sequence reads; setting a plurality of values for the variable parameter; passing the plurality of the nucleic acid sequence reads through the invariable module to generate an intermediate output; passing the intermediate output through the variable module for multiple rounds, each round using one of the variable values; and generating a plurality of variant calls.

Abstract: The present disclosure provides a computer-implemented method for analyzing variants from a plurality of nucleic acid sequence reads using a computation pipeline, which comprises a module depending on a location-dependent parameter. The method comprises executing on a processor the steps of: receiving a plurality of nucleic acid sequence reads comprising at least a first nucleic acid sequence read and a second nucleic acid sequence read; mapping the first nucleic acid sequence read and the second nucleic acid sequence read to a first location and a second location in a genome, respectively; setting a first value and a second value for the location-dependent parameter on the basis of the first location and the second location in the genome, respectively; passing the first nucleic acid sequence read and the second nucleic acid sequence read through the module using the first value and the second value, respectively; and generating a variant call.

Abstract: An efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and optimizing target gray level for each evaluation point in each OPC iteration based on this function. In one given embodiment, the function is approximated as a polynomial function of focus and exposure, R(?,ƒ)=P0+ƒ2·Pb with a threshold of T+V? for contours, where PO represents image intensity at nominal focus, ƒ represents the defocus value relative to the nominal focus, ? represents the exposure change, V represents the scaling of exposure change, and parameter “Pb” represents second order derivative images. In another given embodiment, the analytical optimal gray level is given for best focus with the assumption that the probability distribution of focus and exposure variation is Gaussian.

Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

Abstract: A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

Abstract: A set of data entries is transferred via a memory mapped interface from an external peripheral device to a processor device and is stored in a shared memory region. Based on a first pointer to the shared memory region, a first process executed by the processor device processes a first group of the data entries. Based on a second pointer to the shared memory region, a second process executed by the processor device processes a second group of the data entries. The second process indicates the second pointer to the first process. The first process indicates a lower one of the first pointer and the second pointer to the peripheral device.

Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

Abstract: Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.

Abstract: The present disclosure presents a method and apparatus for processing an authentication request message in a social network. In order to resolve the problems of the inefficiency in confirming request to establish social relationship by a user and inadequacy of parameter provided for authentication under existing technologies, the present disclosure provides a method. The method includes: receiving, by a social network server, the authentication request message sent by a first client to a second client to establish a social relationship with the second client; determining, by the social network server, a relationship chain information indicative of an indirect social network relationship between the first client and the second client; and forwarding, by the social network server, the authentication request message and the obtained relationship chain information to the second client, the relationship chain information being used by the second client to authenticate the authentication request message.

Abstract: Methods provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.

Abstract: The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.

Abstract: A model-based tuning method for tuning a first lithography system utilizing a reference lithography system, each of which has tunable parameters for controlling imaging performance. The method includes the steps of defining a test pattern and an imaging model; imaging the test pattern utilizing the reference lithography system and measuring the imaging results; imaging the test pattern utilizing the first lithography system and measuring the imaging results; calibrating the imaging model utilizing the imaging results corresponding to the reference lithography system, where the calibrated imaging model has a first set of parameter values; tuning the calibrated imaging model utilizing the imaging results corresponding to the first lithography system, where the tuned calibrated model has a second set of parameter values; and adjusting the parameters of the first lithography system based on a difference between the first set of parameter values and the second set of parameter values.

Abstract: When a communication message notification initiated by a current communication window is received, a correlation relationship between a party participating in a communication and K communication subjects that belong to a same user system which acts as another party participating in the communication is obtained respectively. The K communication subjects that belong to the same user system have a common principal account and each communication subject has a corresponding child account. Alternatively, the K communication subjects use a same account and logs in different communication tools in the same system. K?1. According to the correlation relationship, historical communication contents between the party participating in the communication and the K communication subjects are obtained respectively. The historical communication contents are combined. The combined communication contents are saved and displayed.

Abstract: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.