Abstract: A semiconductor wafer containing SiC as a main component has: a first main surface; a second main surface opposite the first main surface; and a release-promoting layer formed between the first main surface and the second main surface within the range of 10 ?m or less in a thickness direction perpendicular to the first main surface and the second main surface, wherein the release-promoting layer is an area where voids or a release-promoting substance is distributed at an interval of 200 ?m or less throughout the range of 500 ?m or more in a plane direction in parallel with the first main surface and the second main surface.

Abstract: A semiconductor wafer providing method performed by a first entity includes: an acquisition step of acquiring a remaining wafer from a second entity; a fabrication step of fabricating a slice surface of the remaining wafer; a growth step of causing a semiconductor crystal layer to grow on the fabricated surface of the remaining wafer; and a wafer providing step of providing a new semiconductor wafer having at least part of the semiconductor crystal layer, which has grown on the fabricated surface of the remaining wafer, to a second entity which is the same as or different from the second entity that is an acquisition source of the remaining wafer.

Abstract: Methods of forming a structure that include non-conformal silicon nitride overlaying a feature are disclosed. An exemplary method includes using a plasma deposition process, depositing silicon nitride onto the top, the bottom, and the sidewall of the feature and optionally treating the deposited silicon nitride. The deposition process and/or the treatment process can affect the deposited silicon nitride, such that after an etch process, the silicon nitride is preferentially removed from the bottom of the feature, such that the structure includes silicon nitride on the top and on the sidewall of the feature and includes no or relatively little silicon nitride on the bottom of the feature.

Abstract: A susceptor with ESC functionality is presented. To provide a heater with metal material for thermal control and ESC capabilities, the present disclosure's susceptor comprises a supporting part configured to support a substrate, a heating coil disposed in the supporting part, the heating coil configured to heat up the temperature of the support, a thermocouple (TC) disposed in the supporting part for monitoring temperature of the supporting part, a shaft disposed below the supporting part, an insulation part disposed in the shaft, a plurality of cooling channels disposed in the insulation part; and insulation layers disposed on the surface of the supporting part and the insulating part, wherein the supporting part is made of conducting metals.

Abstract: A composite substrate includes: a base substrate and an ?-Ga2O3 crystal film that is provided on the base substrate, has a thickness of 10 ?m or more, and has at least one alkali metal element content of 1.2×1015 atoms/cm3 or more and 1.0×1018 atoms/cm3 or less.

Abstract: A multilayer structure of the present invention is a multilayer structure including a base substrate and a semiconductor film that is made of ?-Ga2O3 or an ?-Ga2O3-based solid solution and has a corundum crystal structure, the semiconductor film being disposed on the base substrate. The semiconductor film has an average film thickness of greater than or equal to 10 ?m. The semiconductor film is convexly or concavely warped. An amount of warpage of the semiconductor film is 20 ?m or greater and 64 ?m or less.

Abstract: There is provided a SiC substrate including a biaxially oriented SiC layer, and, in a Si surface and a C surface of the SiC substrate, a difference between a maximum value kmax and a minimum value kmin of a Raman shift value is 0.50 cm?1 or less. The Raman shift value is obtained by, in the Si surface, measuring the Raman shift value indicating a peak corresponding to a transverse acoustic branch of a Raman spectrum at 1 mm intervals on two straight lines passing through a central point of the Si surface and being orthogonal to each other, and, in the C surface, measuring the Raman shift value indicating a peak corresponding to a transverse acoustic branch of a Raman spectrum at 1 mm intervals on two straight lines passing through a central point of the C surface and being orthogonal to each other.

Abstract: An information processing device according to the present technology includes a display control unit that controls a display of rotation center position information on a target space captured image that is an image in which a real space for which a free-viewpoint image is to be generated is captured, the rotation center position information indicating a position of viewpoint rotation center of the free-viewpoint image.

Abstract: A working system that is capable of carrying out a work by working equipment that is operated remotely, the working system including an image generating unit that generates a virtual space image corresponding to an actual space surrounding a working movable body in which the working equipment is disposed, and a display control unit that displays on a display unit the virtual space image that is generated by the image generating unit, wherein the image generating unit generates the virtual space image including a virtual image corresponding to the working equipment.

Abstract: A working system can perform work by a working mobile body remotely operated by a user, and includes an image generation unit configured to generate a virtual space image corresponding to a real space around the working mobile body, and a head-mounted display configured to be worn by the user and give the user the virtual space image generated by the image generation unit. The image generation unit generates the virtual space image corresponding to the position and direction of the working mobile body.

Abstract: Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. Pores are present in the SiC composite substrate.

Abstract: Provided is a ground substrate includes an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. The front surface of the orientation layer on the side used for the crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. A plurality of pores are present in the orientation layer.

Abstract: A rare earth-containing SiC substrate includes a rare earth element and Al. A concentration of the rare earth element is from 1×1016 atoms/cm3 to 1×1019 atoms/cm3 inclusive and a concentration of Al is from 1×1016 atoms/cm3 to 1×1021 atoms/cm3 inclusive.

Abstract: An ?-Ga2O3 semiconductor film according to the present invention has a measurement point (dark spot) with a maximum emission intensity A of not more than 0.6 times the average value X of top 5% of the maximum emission intensities A at all measurement points in intensity mapping of plane cathodoluminescence, wherein the maximum emission intensity A at each measurement point is determined in the wavelength range of 250 to 365 nm.

Abstract: A method for depositing a film in a feature on a substrate, includes forming a hybrid dual frequency plasma. Forming a hybrid dual frequency plasma includes forming a continuous plasma at a high and low RF frequency for a first time period and forming a pulsed plasma at a low RF frequency for a second time period to deposit a film into the feature on the substrate.

Abstract: Provided is an ?-Ga2O3 based semiconductor film having a crystal having a corundum-type crystal structure composed of ?-Ga2O3 or an ?-Ga2O3 solid solution as a main phase. This semiconductor film has a size in which the diameter of the largest circle inscribed in the outer circumference thereof is 5.08 cm (2 inches) or more, and at the center point X and each of four outer circumferential points A, B, C, and D of the largest circle on the surface of the semiconductor film, the full width at half maximum of the peak in the vicinity of 216 cm?1 in Raman spectrum of the semiconductor film, as measured by laser Raman spectroscopy, is 6.0 cm?1 or less.

Abstract: Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. A front surface of the orientation layer on a side used for crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. The orientation layer contains a solid solution containing two or more selected from the group consisting of ?-Al2O3, ?-Cr2O3, ?-Fe2O3, ?-Ti2O3, ?-V2O3, and ?-Rh2O3.

Abstract: There is provided a SiC substrate including a biaxially oriented SiC layer, and the SiC substrate and the biaxially oriented SiC layer have an off angle. With regard to this SiC substrate, in an XRT image obtained by subjecting a certain 4 mm-square region in the biaxially oriented SiC layer to X-ray topography (XRT) measurement, with respect to a total number of basal plane dislocations (BPD), a percentage of the number of BPDs such that an absolute value of an acute angle between a BPD extension direction and the [11-20] direction is 15° or less is 60% or more. The BPD extension direction is defined as a direction of a line segment connecting an end point of a BPD observed as a linear shape and a point 150 ?m away from the end point along the linear BPD in the XRT image.

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

Abstract: Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 ?m.