Abstract: There is provided a SiC substrate including a biaxially oriented SiC layer, and the SiC substrate and the biaxially oriented SiC layer have an off angle. With regard to this SiC substrate, in an XRT image obtained by subjecting a certain 4 mm-square region in the biaxially oriented SiC layer to X-ray topography (XRT) measurement, with respect to a total number of basal plane dislocations (BPD), a percentage of the number of BPDs such that an absolute value of an acute angle between a BPD extension direction and the [11-20] direction is 15° or less is 60% or more. The BPD extension direction is defined as a direction of a line segment connecting an end point of a BPD observed as a linear shape and a point 150 ?m away from the end point along the linear BPD in the XRT image.

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

Abstract: Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 ?m.

Abstract: Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element, in which a front surface on a side used for the crystal growth of the orientation layer is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire, the orientation layer contains a material selected from the group consisting of ?-Cr2O3, ?-Fe2O3, ?-Ti2O3, ?-V2O3, and ?-Rh2O3, or a solid solution containing two or more selected from the group consisting of ?-Al2O3, ?-Cr2O3, ?-Fe2O3, ?-Ti2O3, ?-V2O3, and ?-Rh2O3, and a half width of an X-ray rocking curve of a (104) plane of the corundum-type crystal structure is 500 arcsec. or less.

Abstract: An ?- or ?-Ga2O3 crystal is produced by bringing an aqueous solution including a Ga ion into a supercritical state having a temperature of 400° C. or more and a pressure of 22.1 MPa or more.

Abstract: Provided is a ?-Ga2O3 based semiconductor film which is a semiconductor film in a circular shape having a crystal having a corundum-type crystal structure composed of ?-Ga2O3 or an ?-Ga2O3 solid solution as a main phase. The maximum value ?max and the minimum value ?min for off-angles at the center point X and four outer circumferential points A, B, C, and D of a surface of the semiconductor film satisfy the relationship of ?max-?min?0.30°. The off-angle is defined as an inclination angle ? of a crystal axis oriented in the substantially normal direction of the semiconductor film with respect to the film surface normal of the semiconductor film.

Abstract: A biaxially oriented SiC composite substrate includes a first biaxially oriented SiC layer that contains a threading screw dislocation and a basal plane dislocation, and a second biaxially oriented SiC layer that is formed continuously from the first biaxially oriented SiC layer and that contains 1×1016 atoms/cm3 or more and 1×1019 atoms/cm3 or less of a rare earth element. The defect density of a surface of the second biaxially oriented SiC layer is smaller than the defect density of the first biaxially oriented SiC layer.

Abstract: Apparatuses for processing substrates with temperature controlled reaction chambers are provided. In some embodiments, an apparatus for processing a substrate includes a reaction chamber provided with a chamber wall; a gate valve provided to the wall; a substrate transfer chamber operationally connected to the gate valve; a substrate transfer robot disposed within the substrate transfer chamber for transferring the substrate between the reaction chamber and the substrate transfer chamber through the gate valve; a substrate support provided with a heater disposed within the reaction chamber; and a chiller provided to the wall opposite the gate valve.

Abstract: An information processing device according to the present technology includes a display control unit that controls a display of rotation center position information on a target space captured image that is an image in which a real space for which a free-viewpoint image is to be generated is captured, the rotation center position information indicating a position of viewpoint rotation center of the free-viewpoint image.

Abstract: A SiC composite substrate includes a SiC single crystal layer and at least one biaxially oriented SiC layer. The at least one biaxially oriented SiC layer is disposed on the SiC single crystal. In the biaxially oriented SiC layer, the SiC is oriented in both a c-axis direction and an a-axis direction. The biaxially oriented SiC layer has pores and has a density of defect reaching the surface of 1.0×101/cm2 or less.

Abstract: An oriented ceramic sintered body production method includes (a) a step of preparing a ceramic compact before firing into an oriented ceramic sintered body; and (b) a step of obtaining an oriented ceramic sintered body by sandwiching the ceramic compact between a pair of releasing sheets, placing the ceramic compact and the releasing sheets in a hot press firing furnace, and hot press firing the ceramic compact while applying a pressure by a pair of punches through the pair of releasing sheets, wherein each of the releasing sheets is a releasing sheet such that, after the releasing sheet is sandwiched between PET films, is then placed and vacuum-packed on a stainless steel sheet, and is isostatically pressed at 200 kg/cm2, a surface of the releasing sheet on the side opposite from the stainless steel sheet has a profile curve with a total profile height Pt of 0.8 ?m or less.

Abstract: Provided is a rare earth-containing SiC substrate including a biaxially oriented SiC layer wherein a ratio of a concentration CB of B to a concentration CRE of a rare earth element, CB/CRE, is 1.0×10?2 to 1.0×105.

Abstract: A gallium oxide single crystal particle according to the present invention is an ?-Ga2O3 single crystal particle and has a diameter and a height that exceed 100 ?m.

Abstract: [Problem] To provide: a novel enzyme which is derived from a microorganism other than Bacillus circulans and is highly selective for galactotrisaccharide production and with which the galactooligosaccharide can be highly efficiently produced; and a novel method capable of producing the galactooligosaccharide. [Solution] A method for producing a galatooligosaccharide, the method including bringing an enzyme having an amino acid sequence selected from the group consisting of (a) to (f) and cells of a bacterium belonging to the genus Paenibacillus and/or a galactooligosaccharide-producing enzyme for the bacterium, into contact with lactose. (a) An amino acid sequence of sequence number 1. (b) An amino acid sequence of sequence number 2. (c) An amino acid sequence of an enzyme having galactooligosaccharide-producing activity, the amino acid sequence being the amino acid sequence of sequence number 1 in which one to ten amino acids have been replaced, removed, or inserted.

Abstract: There is provided a SiC substrate including a biaxially oriented SiC layer, wherein when analyzed by photoluminescence (PL) to obtain a graph by plotting PL intensity I as the vertical axis versus distance (?m) in the [11-20] direction as the horizontal axis, (i) the graph has a shape such that a maximum point and a minimum point are repeated, (ii) when a maximum value of PL intensity I at a maximum point PM is assumed to be M, and a minimum value of PL intensity I at a minimum point Pm whose distance in the [11-20] direction is longer than that of the maximum point PM, and point Pm being present at a position nearest to point PM, is assumed to be m, a ratio of M/m is 1.05 or more, and (iii) distance L in the [11-20] direction between point PM and point Pm is 15 to 150 ?m.

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

Abstract: Provided is a method for producing SiC single crystal substrate including placing a SiC single crystal serving as a seed crystal and a SiC powder layer in a container in a state in which the SiC single crystal and the SiC powder layer are in contact with each other and performing a heat treatment by placing the container in an effective working zone of a firing furnace controlled to a temperature range within ±50° C. of a preset temperature to grow a SiC single crystal on the seed crystal.

Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50 Pa.

Abstract: A composite substrate includes: a base substrate and an ?-Ga2O3 crystal film that is provided on the base substrate, has a thickness of 10 ?m or more, and has at least one alkali metal element content of 1.2×1015 atoms/cm3 or more and 1.0×1018 atoms/cm3 or less.

Abstract: A film forming apparatus includes a chamber, a susceptor placed in the chamber, an electrode placed inside the susceptor, a conductive shower head arranged above the susceptor apart from each other, an annular exhaust duct arranged so as to surround the outer edge of the susceptor, and an AC power supply that supplies AC power to the electrode, wherein the annular exhaust duct has an exhaust gas introduction member having an exhaust gas inlet and an exhaust gas discharge member having an exhaust gas outlet, the exhaust gas introduction member is arranged on the susceptor side in the radial direction of the susceptor and is made of an insulating material, and the exhaust gas discharge member is arranged on the side opposite to the susceptor side in the radial direction of the susceptor, and is made of a conductive material.