Patents by Inventor Jun Yoshikawa

Jun Yoshikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10566174
    Abstract: A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing container and configured to supply gas to the processing space, a dielectric member having a facing surface that faces the processing space, and an antenna provided on a surface opposite to the facing surface of the dielectric member and configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member. The gas supply unit includes a transport hole transporting the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container and an injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space. The injection hole has a diameter larger than that of the transport hole.
    Type: Grant
    Filed: November 4, 2015
    Date of Patent: February 18, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Jun Yoshikawa
  • Patent number: 10504698
    Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.
    Type: Grant
    Filed: September 29, 2015
    Date of Patent: December 10, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Masayuki Kohno, Ryou Son, Naoki Matsumoto, Jun Yoshikawa, Michitaka Aita, Ippei Shimizu, Yusuke Yoshida, Koji Koyama, Masami Sudayama, Yukiyoshi Aramaki
  • Publication number: 20190358503
    Abstract: Provided is a method for manufacturing an iron golf club head by forging a single round rod member with a pair of dies to form, as a single piece, a body and a neck into which a shaft is to be inserted. The method includes: a first step of heating the single round rod member into a heated material; a second step of placing the heated material in the pair of dies; and a third step of forging the heated material placed in the pair of dies. In the third step, the heated material is prevented from flowing out from parting surfaces of the respective dies at a sole side of the body in the pair of dies, and the heated material blocked at the sole side in the pair of dies flows toward each of a toe of the body and the neck in the pair of dies.
    Type: Application
    Filed: March 27, 2018
    Publication date: November 28, 2019
    Inventors: Kazuhiro DOI, Tetsuya KANAYAMA, Jun YOSHIKAWA
  • Patent number: 10442736
    Abstract: There is provided a platy Mg-containing zinc oxide sintered compact containing 1 to 10 wt % Mg as a first dopant element and 0.005 wt % or more at least one second dopant element selected from the group consisting of Al, Ga and In, the balance consisting essentially of ZnO and optionally at least one third dopant element selected from the group consisting of Br, Cl, F, Sn, Y, Pr, Ge, B, Sc, Si, Ti, Zr, Hf, Mn, Ta, W, Cu, Ni, Cr, La, Gd, Bi, Ce, Sr and Ba, wherein the (002)-plane or (100)-plane orientation in the plate surface is 60% or more. The Mg-containing zinc oxide sintered compact of the present invention has excellent properties such as high orientation despite solid dissolution of Mg.
    Type: Grant
    Filed: January 30, 2017
    Date of Patent: October 15, 2019
    Assignee: NGK Insulators, Ltd.
    Inventors: Sota Okochi, Jun Yoshikawa, Koichi Kondo
  • Patent number: 10379699
    Abstract: There is provided an information processing apparatus including a control unit configured to acquire and output information of an operation screen on a display unit from a relay apparatus storing the information of the operation screen, the relay apparatus being configured to relay at least one moving image from a moving image server, in which the moving image is stored, to a different device via a network, request the thumbnail image to be arranged in the region of the operation screen to the relay apparatus, arrange the acquired thumbnail image in the region if the thumbnail image requested is acquired, and request a thumbnail image the acquisition of which fails until the acquisition is succeeded if the acquisition is failed due to the fact that the thumbnail image is not present.
    Type: Grant
    Filed: November 11, 2014
    Date of Patent: August 13, 2019
    Assignee: SONY CORPORATION
    Inventors: Shigeki Toyoda, Jun Yoshikawa, Shigeki Wakatani
  • Patent number: 10368558
    Abstract: [Problem] To provide a lactase solution having excellent thermal stability. [Solution] A lactase solution in which the ratio of a lactase fraction having a molecular weight of about 120 kDa measured by SDS polyacrylamide gel electrophoresis is 20% or more.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: August 6, 2019
    Assignee: GODO SHUSEI CO., LTD.
    Inventors: Tomoko Sato, Jun Yoshikawa, Hirofumi Horiguchi
  • Patent number: 10332958
    Abstract: A supporting substrate for a composite substrate comprises a ceramic and has a polished surface for use in bonding. An orientation degree of the ceramic forming the supporting substrate at the polished surface is 50% or higher, and an aspect ratio of each crystal grain included in the supporting substrate is 5.0 or less.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: June 25, 2019
    Assignee: NGK Insulators, Ltd.
    Inventors: Jun Yoshikawa, Mikiya Ichimura, Katsuhiro Imai
  • Patent number: 10312057
    Abstract: A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween.
    Type: Grant
    Filed: October 14, 2015
    Date of Patent: June 4, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masayuki Kohno, Yusuke Yoshida, Naoki Matsumoto, Ippei Shimizu, Naoki Mihara, Jun Yoshikawa, Michitaka Aita, Yoshikazu Azumaya, Junsuke Hoshiya
  • Publication number: 20190075806
    Abstract: [Problem to be Solved] To provide a lactase solution with good heat stability as desired by identifying a factor to influence heat stability in a lactase product and using the factor as an index. [Solution] Proteinase B having the following enzymatic properties, and a lactase solution containing less than 11.5 ng of the proteinase B. 1) having an optimum temperature of about 40° C., 2) having an optimum pH of about 8.0, 3) being stable at pH 5.0 to 8.0, 4) having high substrate specificity to FITC-casein and lactase, 5) having a neutral lactase-fragmenting action, and 6) having a molecular weight of about 29,700 to 30,000 (by SDS-PAGE).
    Type: Application
    Filed: March 15, 2017
    Publication date: March 14, 2019
    Applicant: GODO SHUSEI CO., LTD.
    Inventors: Asami Sugawara, Jun Yoshikawa
  • Publication number: 20190040446
    Abstract: Provided is a method for determining activity of arylsulfatase in an aqueous system, which comprises a step in which arylsulfatase is subjected to reaction with a substrate, from which fluorophore or chromophore is liberated by suffering an action of the arylsulfatase, in an aqueous reaction system having high ionic strength. Also, provided are a lactase preparation having a lactase activity of 4,000 NLU/g or more according to the FCC IV method and having an arylsulfatase activity of 0.1% or less of the lactase activity as the basis, in which the arylsulfatase activity has been determined by the method for determining activity of arylsulfatase in an aqueous system according to the fluorescence method of the present invention; a method for producing this preparation; and a dairy product which comprises using this preparation.
    Type: Application
    Filed: September 12, 2018
    Publication date: February 7, 2019
    Applicant: GODO SHUSEI CO., LTD.
    Inventors: Kazuma Shiota, Hirofumi Horiguchi, Ai Iyotani, Jun Yoshikawa, Tomoko Sato
  • Publication number: 20180368429
    Abstract: Provided is a method for manufacturing a fermented milk product, including sequentially performing a first step of mixing raw material milk and lactic acid bacteria to obtain a mixed liquid, and a second step of fermenting the mixed liquid, characterized by performing a step of adding a Paenibacillus-derived protease to the raw material milk and/or the mixed liquid (protease addition step) before the second step is completed. According to this manufacturing method, the hardness of the fermented milk product can be adjusted to a desired value while original smoothness of the fermented milk product is maintained.
    Type: Application
    Filed: December 15, 2016
    Publication date: December 27, 2018
    Applicant: Godo Shusei Co., Ltd.
    Inventors: Tomoko Sato, Jun Yoshikawa
  • Patent number: 10156024
    Abstract: Disclosed is a self-supporting zinc oxide substrate composed of a plate composed of a plurality of zinc-oxide-based single crystal grains, wherein the plate has a single crystal structure in an approximately normal direction, and the zinc-oxide-based single crystal grains have a cross-sectional average diameter of greater than 1 ?m. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a layer with a thickness of 20 ?m or greater composed of zinc-oxide-based crystals on the oriented polycrystalline sintered body so that the layer has crystal orientation mostly in conformity with crystal orientation of the oriented polycrystalline sintered body; and removing the oriented polycrystalline sintered body to obtain the self-supporting zinc oxide substrate.
    Type: Grant
    Filed: November 25, 2015
    Date of Patent: December 18, 2018
    Assignee: NGK Insulators, Ltd.
    Inventors: Morimichi Watanabe, Jun Yoshikawa, Hirofumi Yamaguchi, Tsutomu Nanataki
  • Patent number: 10093550
    Abstract: A method of producing hexagonal plate-like zinc oxide particles having a sharp particle size distribution (i.e., a relatively uniform particle size) at a high weight yield and a high percent yield is provided. The method of producing hexagonal plate-like zinc oxide particles of the present invention comprises mixing by stirring an aqueous hexamethylenetetramine (HMT) solution, a solution of an anionic surfactant in a water-insoluble organic solvent, and optionally water to form a microemulsion containing an aqueous phase of an aqueous hexamethylenetetramine solution having a molar concentration of 0.05 M or more; dropwise adding an aqueous zinc salt solution to the microemulsion; and heating the microemulsion containing the aqueous zinc salt solution to a reaction temperature of 80° C. or more without using any autoclave to form hexagonal plate-like zinc oxide particles.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: October 9, 2018
    Assignees: NGK Insulators, Ltd., Nagoya Institute of Technology
    Inventors: Jun Yoshikawa, Tsutomu Nanataki, Tomokatsu Hayakawa
  • Patent number: 10083819
    Abstract: An antenna includes a dielectric window and a slot plate provided at one surface of the dielectric window. The slot plate includes a plurality of slot pairs each being formed of two slots. The slot pairs are concentrically disposed about a centroid position of the slot plate and provided at positions where straight lines extending from the centroid position of the slot plate and passing through each slot pair are not overlapped with each other.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: September 25, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Naoki Matsumoto, Koji Koyama, Jun Yoshikawa
  • Patent number: 10062547
    Abstract: In a plasma processing apparatus for processing a substrate by plasmatizing a process gas introduced into a processing container, an introducing unit which introduces the process gas is formed on a ceiling surface of the processing container; a gas retention portion which gathers the process gas supplied from the outside of the processing container through a supply passage, and a plurality of gas ejection holes which allow communication between the gas retention portion and the inside of the processing container are formed in the introducing unit; a gas ejection hole is not formed in a location of the gas retention portion that faces an opening of the supply passage; and a cross section of each of the gas ejection holes has a flat shape.
    Type: Grant
    Filed: July 31, 2014
    Date of Patent: August 28, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Naoki Mihara, Naoki Matsumoto, Jun Yoshikawa, Kazuo Murakami
  • Publication number: 20180209090
    Abstract: A novel composition for decolorizing a dye is provided. A composition for decolorizing a dye contains a multicopper oxidase and an iodide ion.
    Type: Application
    Filed: July 28, 2015
    Publication date: July 26, 2018
    Applicants: NATIONAL UNIVERSITY CORPORATION CHIBA UNIVERSITY, GODO SHUSEI CO., LTD.
    Inventors: Seigo AMACHI, Jun YOSHIKAWA, Hirofumi HORIGUCHI
  • Publication number: 20180139977
    Abstract: [Object] The purpose is to produce fermented milk containing lactic acid bacteria and bifidobacteria while increasing and maintaining the number of live bifidobacteria by a simple method. [Solving Means] A method for producing fermented milk in which a first step for mixing raw material milk, lactic acid bacteria, and bifidobacteria and a second step for fermenting the raw material milk are carried out in order, wherein a step for adding lactase to the raw material milk (lactase addition step) is carried out before the completion of the second step and the lactase addition step is carried out at one or more time point selected from before the first step, almost simultaneously with the first step, or after the first step.
    Type: Application
    Filed: May 18, 2016
    Publication date: May 24, 2018
    Applicant: Godo Shusei Co., Ltd.
    Inventors: Kyoko Morie, Atsuko Shinada, Hirofumi Horiguchi, Jun Yoshikawa
  • Patent number: 9970109
    Abstract: Disclosed is a substrate processing method including: placing a plurality of substrates on a rotary table in a processing container; and performing a processing on the substrates while rotating the rotary table. A dummy workpiece is disposed in a gap between the substrates placed on the rotary table.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: May 15, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Jun Yoshikawa, Motoshi Fukudome
  • Patent number: 9934968
    Abstract: There is provided a production method which enables stable formation of a p-type zinc oxide film and also is suitable for enlarging the area of the film. The method for producing a p-type zinc oxide film according to the present invention comprises the steps of: placing a target containing a zinc source and a substrate in a gas atmosphere containing a nitrogen source and an oxygen source and having a gas pressure of 0.1 Pa to 100 Pa, and exposing the target to arc discharge, thereby forming a precursor film containing zinc and oxygen on the substrate; and annealing the precursor film in an oxidizing atmosphere, thereby forming a p-type zinc oxide film.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: April 3, 2018
    Assignees: Nagoya Institute of Technology, NGK Insulators, Ltd.
    Inventors: Masaki Tanemura, Morimichi Watanabe, Jun Yoshikawa, Tsutomu Nanataki
  • Patent number: 9919931
    Abstract: Provided is a zinc oxide-based sputtering target capable of improving the film formation rate while suppressing arcing in the formation of a zinc oxide-based transparent conductive film by sputtering. This zinc oxide-based sputtering target includes a zinc oxide-based sintered body mainly including zinc oxide crystal grains, and has a degree of (002) orientation of 50% or greater at a sputtering surface and a density of 5.30 g/cm3 or greater.
    Type: Grant
    Filed: September 9, 2015
    Date of Patent: March 20, 2018
    Assignee: NGK Insulators, Ltd.
    Inventors: Jun Yoshikawa, Katsuhiro Imai, Koichi Kondo, Koki Kanno