Patents by Inventor Jun Yoshikawa
Jun Yoshikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220157946Abstract: Provided is a ?-Ga2O3 based semiconductor film which is a semiconductor film in a circular shape having a crystal having a corundum-type crystal structure composed of ?-Ga2O3 or an ?-Ga2O3 solid solution as a main phase. The maximum value ?max and the minimum value ?min for off-angles at the center point X and four outer circumferential points A, B, C, and D of a surface of the semiconductor film satisfy the relationship of ?max-?min?0.30°. The off-angle is defined as an inclination angle ? of a crystal axis oriented in the substantially normal direction of the semiconductor film with respect to the film surface normal of the semiconductor film.Type: ApplicationFiled: January 31, 2022Publication date: May 19, 2022Applicant: NGK INSULATORS, LTD.Inventors: Hiroshi FUKUI, Morimichi WATANABE, Jun YOSHIKAWA
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Publication number: 20210404089Abstract: Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element, in which a front surface on a side used for the crystal growth of the orientation layer is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire, the orientation layer contains a material selected from the group consisting of ?-Cr2O3, ?-Fe2O3, ?-Ti2O3, ?-V2O3, and ?-Rh2O3, or a solid solution containing two or more selected from the group consisting of ?-Al2O3, ?-Cr2O3, ?-Fe2O3, ?-Ti2O3, ?-V2O3, and ?-Rh2O3, and a half width of an X-ray rocking curve of a (104) plane of the corundum-type crystal structure is 500 arcsec. or less.Type: ApplicationFiled: September 7, 2021Publication date: December 30, 2021Applicant: NGK INSULATORS, LTD.Inventors: Morimichi WATANABE, Jun YOSHIKAWA
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Publication number: 20210404090Abstract: Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. A front surface of the orientation layer on a side used for crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. The orientation layer contains a solid solution containing two or more selected from the group consisting of ?-Al2O3, ?-Cr2O3, ?-Fe2O3, ?-Ti2O3, ?-V2O3, and ?-Rh2O3.Type: ApplicationFiled: September 7, 2021Publication date: December 30, 2021Applicant: NGK INSULATORS, LTD.Inventors: Morimichi WATANABE, Jun YOSHIKAWA
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Publication number: 20210384300Abstract: Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 ?m.Type: ApplicationFiled: August 23, 2021Publication date: December 9, 2021Applicant: NGK INSULATORS, LTD.Inventors: Kiyoshi MATSUSHIMA, Jun YOSHIKAWA, Morimichi WATANABE, Risa MIYAKAZE
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Publication number: 20210384145Abstract: Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. Pores are present in the SiC composite substrate.Type: ApplicationFiled: August 20, 2021Publication date: December 9, 2021Applicant: NGK INSULATORS, LTD.Inventors: Kiyoshi MATSUSHIMA, Jun YOSHIKAWA, Morimichi WATANABE, Risa MIYAKAZE
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Publication number: 20210355602Abstract: Provided is a ground substrate includes an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. The front surface of the orientation layer on the side used for the crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. A plurality of pores are present in the orientation layer.Type: ApplicationFiled: July 28, 2021Publication date: November 18, 2021Applicant: NGK INSULATORS, LTD.Inventors: Hiroshi FUKUI, Morimichi WATANABE, Jun YOSHIKAWA
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Patent number: 11136569Abstract: Provided are a novel isoamylase improved in optimum temperature, and more specifically, improved in heat resistance, and a process for producing the isoamylase. An isoamylase having at least one amino acid mutation selected from the group consisting of D268A, M277I, A549P, A554P and A580T in an isoamylase consisting of an amino acid sequence represented by SEQ ID No: 1 or an isoamylase consisting of the amino acid sequence represented by SEQ ID No: 1 and having deletion, substitution or insertion of one to several amino acid residues.Type: GrantFiled: May 26, 2017Date of Patent: October 5, 2021Assignee: GODO SHUSEI CO., LTD.Inventors: Masahiro Baba, Ryoko Sano, Shun Ogawa, Hirofumi Horiguchi, Jun Yoshikawa
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Publication number: 20210301422Abstract: A SiC composite substrate includes a SiC single crystal layer and at least one biaxially oriented SiC layer. The at least one biaxially oriented SiC layer is disposed on the SiC single crystal. In the biaxially oriented SiC layer, the SiC is oriented in both a c-axis direction and an a-axis direction. The biaxially oriented SiC layer has pores and has a density of defect reaching the surface of 1.0×101/cm2 or less.Type: ApplicationFiled: June 11, 2021Publication date: September 30, 2021Applicant: NGK INSULATORS, LTD.Inventors: Risa MIYAKAZE, Kiyoshi MATSUSHIMA, Jun YOSHIKAWA, Morimichi WATANABE
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Patent number: 11007411Abstract: Provided is a method for manufacturing an iron golf club head by forging a single round rod member with a pair of dies to form, as a single piece, a body and a neck into which a shaft is to be inserted. The method includes: a first step of heating the single round rod member into a heated material; a second step of placing the heated material in the pair of dies; and a third step of forging the heated material placed in the pair of dies. In the third step, the heated material is prevented from flowing out from parting surfaces of the respective dies at a sole side of the body in the pair of dies, and the heated material blocked at the sole side in the pair of dies flows toward each of a toe of the body and the neck in the pair of dies.Type: GrantFiled: April 30, 2020Date of Patent: May 18, 2021Assignees: Mizuno Corporation, Chuo Industries, Ltd.Inventors: Kazuhiro Doi, Tetsuya Kanayama, Jun Yoshikawa
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Publication number: 20210013010Abstract: Examples of a plasma device includes a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts, a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap, and a conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap.Type: ApplicationFiled: July 6, 2020Publication date: January 14, 2021Inventors: Jun Yoshikawa, Toshihisa Nozawa
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Publication number: 20200395209Abstract: Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the activated species. A pressure within the reaction chamber during the step of forming activated species can be less than 50. Pa.Type: ApplicationFiled: June 9, 2020Publication date: December 17, 2020Inventors: Shinya Yoshimoto, Jun Yoshikawa, Toshihisa Nozawa
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Patent number: 10832892Abstract: An antenna according to an aspect includes: a dielectric window having a first surface and a second surface, the second surface having an annular recessed surface and a flat surface surrounded by the recessed surface; a slot plate; a dielectric plate; a heat transfer member made of metal and having an upper surface and a lower surface opposing each other; a cooling jacket; and a heater, in which the upper surface includes a plurality of first regions and a second region, the cooling jacket is mounted on the plurality of first regions, the second region is recessed further toward the lower surface side than the plurality of first regions, the heater is mounted on the second region, and each of the plurality of first regions is provided at a position at least partially overlapping with the flat surface when viewed in a direction parallel to a central axis.Type: GrantFiled: January 4, 2018Date of Patent: November 10, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Kazuki Takahashi, Yuki Kawada, Naoki Matsumoto, Takahiro Senda, Koji Koyama, Shohei Fukano, Jun Yoshikawa, Hiroyuki Kondo, Takashi Minakawa
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Publication number: 20200291371Abstract: Provided are a novel isoamylase improved in optimum temperature, and more specifically, improved in heat resistance, and a process for producing the isoamylase. An isoamylase having at least one amino acid mutation selected from the group consisting of D268A, M277I, A549P, A554P and A580T in an isoamylase consisting of an amino acid sequence represented by SEQ ID No: 1 or an isoamylase consisting of the amino acid sequence represented by SEQ ID No: 1 and having deletion, substitution or insertion of one to several amino acid residues.Type: ApplicationFiled: May 26, 2017Publication date: September 17, 2020Applicant: GODO SHUSEI CO., LTD.Inventors: Masahiro BABA, Ryoko SANO, Shun OGAWA, Hirofumi HORIGUCHI, Jun YOSHIKAWA
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Publication number: 20200254314Abstract: Provided is a method for manufacturing an iron golf club head by forging a single round rod member with a pair of dies to form, as a single piece, a body and a neck into which a shaft is to be inserted. The method includes: a first step of heating the single round rod member into a heated material; a second step of placing the heated material in the pair of dies; and a third step of forging the heated material placed in the pair of dies. In the third step, the heated material is prevented from flowing out from parting surfaces of the respective dies at a sole side of the body in the pair of dies, and the heated material blocked at the sole side in the pair of dies flows toward each of a toe of the body and the neck in the pair of dies.Type: ApplicationFiled: April 30, 2020Publication date: August 13, 2020Inventors: Kazuhiro DOI, Tetsuya KANAYAMA, Jun YOSHIKAWA
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Patent number: 10716314Abstract: Provided is a method for manufacturing a fermented milk product, including sequentially performing a first step of mixing raw material milk and lactic acid bacteria to obtain a mixed liquid, and a second step of fermenting the mixed liquid, characterized by performing a step of adding a Paenibacillus-derived protease to the raw material milk and/or the mixed liquid (protease addition step) before the second step is completed. According to this manufacturing method, the hardness of the fermented milk product can be adjusted to a desired value while original smoothness of the fermented milk product is maintained.Type: GrantFiled: December 15, 2016Date of Patent: July 21, 2020Assignee: GODO SHUSEI CO., LTD.Inventors: Tomoko Sato, Jun Yoshikawa
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Patent number: 10717679Abstract: There is provided a platy zinc oxide sintered compact containing 0.80 wt % or less at least one first dopant element selected from the group consisting of Al, Ga and In, the balance consisting essentially of ZnO and optionally at least one second dopant element selected from the group consisting of Br, Cl, F, Sn, Y, Pr, Ge, B, Sc, Si, Ti, Zr, Hf, Mn, Ta, W, Cu, Ni, Cr, La, Gd, Bi, Ce, Sr and Ba, the second dopant element being optional component, wherein the (002)-plane orientation in the plate surface is 60% or more. The zinc oxide sintered compact of the present invention has excellent properties such as high orientation in addition to transparency and conductivity.Type: GrantFiled: January 30, 2017Date of Patent: July 21, 2020Assignee: NGK Insulators, Ltd.Inventors: Sota Okochi, Jun Yoshikawa, Koichi Kondo
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Publication number: 20200216364Abstract: An oriented ceramic sintered body production method includes (a) a step of preparing a ceramic compact before firing into an oriented ceramic sintered body; and (b) a step of obtaining an oriented ceramic sintered body by sandwiching the ceramic compact between a pair of releasing sheets, placing the ceramic compact and the releasing sheets in a hot press firing furnace, and hot press firing the ceramic compact while applying a pressure by a pair of punches through the pair of releasing sheets, wherein each of the releasing sheets is a releasing sheet such that, after the releasing sheet is sandwiched between PET films, is then placed and vacuum-packed on a stainless steel sheet, and is isostatically pressed at 200 kg/cm2, a surface of the releasing sheet on the side opposite from the stainless steel sheet has a profile curve with a maximum profile height Pt of 0.8 ?m or less.Type: ApplicationFiled: March 13, 2020Publication date: July 9, 2020Applicant: NGK INSULATORS, LTD.Inventors: Morimichi WATANABE, Kei SATO, Kiyoshi MATSUSHIMA, Takahiro MAEDA, Jun YOSHIKAWA, Tsutomu NANATAKI
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Patent number: 10688354Abstract: Provided is a method for manufacturing an iron golf club head by forging a single round rod member with a pair of dies to form, as a single piece, a body and a neck into which a shaft is to be inserted. The method includes: a first step of heating the single round rod member into a heated material; a second step of placing the heated material in the pair of dies; and a third step of forging the heated material placed in the pair of dies. In the third step, the heated material is prevented from flowing out from parting surfaces of the respective dies at a sole side of the body in the pair of dies, and the heated material blocked at the sole side in the pair of dies flows toward each of a toe of the body and the neck in the pair of dies.Type: GrantFiled: March 27, 2018Date of Patent: June 23, 2020Assignees: Mizuno Corporation, Chuo Industries, Ltd.Inventors: Kazuhiro Doi, Tetsuya Kanayama, Jun Yoshikawa
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Patent number: 10679826Abstract: A microwave control method is used in a microwave plasma processing apparatus including a microwave generation unit, a waveguide for guiding a microwave generated by the microwave generation unit, a tuner for controlling a position of a movable short-circuiting plate, and a stub provided between the tuner and an antenna in the waveguide and insertable into an inner space of the waveguide. The method includes detecting the position of the movable short-circuiting plate controlled by the tuner for the microwave outputted by the microwave generation unit, determining whether or not a difference between a reference position and the detected position of the movable short-circuiting plate is within a tolerable range, and controlling an insertion length of the stub into the inner space of the waveguide when it is determined that the difference between the position of the movable short-circuiting plate and the reference position is not within the tolerable range.Type: GrantFiled: July 11, 2017Date of Patent: June 9, 2020Assignee: Tokyo Electron LimitedInventors: Jun Yoshikawa, Naoki Matsumoto, Kazushi Kaneko
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Publication number: 20200161090Abstract: A plasma processing apparatus includes a processing container that defines a processing space, a gas supply unit provided on a sidewall of the processing container and configured to supply gas to the processing space, a dielectric member having a facing surface that faces the processing space, and an antenna provided on a surface opposite to the facing surface of the dielectric member and configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member. The gas supply unit includes a transport hole transporting the gas to a position where the gas does not reach the processing space in the inside of the sidewall of the processing container and an injection hole communicated to the transport hole and configured to inject the gas transported to the position into the processing space. The injection hole has a diameter larger than that of the transport hole.Type: ApplicationFiled: January 24, 2020Publication date: May 21, 2020Applicant: TOKYO ELECTRON LIMITEDInventor: Jun YOSHIKAWA