Abstract: An optical member driving mechanism for connecting an optical member is provided, including a fixed portion and a first adhesive member. The fixed portion includes a first member and a second member, wherein the first member is fixedly connected to the second member via the first adhesive member.

Abstract: The present application provides a light sensor module, which comprise a display element, a first polarizing element, a light sensor, a transparent layer, and a second polarizing element. The display element emits a display light source. The first polarizing element covers the display element, and blocks a first phase portion of the display light source and allows a second phase portion of the display light source to penetrate. The transparent layer covers the first polarizing element. The light sensor is disposed on one side of the display element or the first polarizing element. The second polarizing element is disposed between the light sensor and the transparent layer and blocks a second phase portion of the display light source.

Abstract: A method for manufacturing and a method for decolorizing dioctyl terephthalate are provided. The decolorizing dioctyl terephthalate includes: providing an unpurified dioctyl terephthalate; mixing the unpurified dioctyl terephthalate with a reducing agent and an adsorption medium to obtain a first decolorizing product; and mixing the first decolorizing product with a decolorizing adsorbent material to obtain a second decolorizing product. The method for manufacturing dioctyl terephthalate includes: a transesterification step, an alkaline washing and neutralization step, a redox step, a decolorization step and a stripping step; the decolorizing adsorbent material has an acid value between 0.1 and 2 mg KOH/g, a relative humidity between 2 and 10%, and a fineness between 80 and 100 cm2/g.

Abstract: A flash memory method includes: classifying data into a plurality of groups of data; respectively executing error code encoding to generate first corresponding parity check code to store the groups of data and first corresponding parity check code into flash memory module as first blocks; reading out the groups of data from first blocks; executing error correction and de-randomize operation upon read out data to generate de-randomized data; executing randomize operation upon de-randomized data according to a set of seeds to generate randomized data; performing error code encoding upon randomized data to generate second corresponding parity check code; and, storing randomized data and second corresponding parity check code into flash memory module as second block; a cell of first block is used for storing data of first bit number which is different from second bit number corresponding to a cell of second block.

Abstract: An optical system is provided. The optical system includes an immovable part, a second movable part, a second drive mechanism, and a second circuit mechanism. The second movable part is used for connecting to a second optical element. The second movable part is movable relative to the immovable part. The second drive mechanism is used for driving the second movable part to move relative to the immovable part. The second circuit mechanism is electrically connected to the second drive mechanism.

Abstract: Provided is a semiconductor device, including a substrate including a pixel region, a gate structure on the substrate in the pixel region, wherein the gate structure comprises a gate dielectric layer and a gate conductive layer on the gate dielectric layer; a dielectric layer located over the substrate and the gate structure; and a contact located in the dielectric layer and electrically connected to the gate conductive layer. The contact includes a doped polysilicon layer in contact with the gate conductive layer; a metal layer located on the doped polysilicon layer, wherein a part of the metal layer is embedded in the doped polysilicon layer; a barrier layer located between the metal layer and the doped polysilicon layer; and a metal silicide layer located between the barrier layer and the doped polysilicon layer.

Abstract: A method for fabricating semiconductor device includes: forming a first semiconductor layer and an insulating layer on a substrate; removing the insulating layer and the first semiconductor layer to form openings; forming a second semiconductor layer in the openings; and patterning the second semiconductor layer, the insulating layer, and the first semiconductor layer to form fin-shaped structures.

Abstract: Organic metal compounds, and organic light-emitting devices employing the same are provided. The organic metal compound has a chemical structure of Formula (I): The definitions of R1-R18 and n are as defined in specification. The organic light-emitting device includes a pair of electrodes; and an organic light-emitting element, disposed between the electrodes, wherein the organic light-emitting element includes the aforementioned organic metal compound.

Abstract: A flash memory method includes: classifying data into a plurality of groups of data; respectively executing error code encoding to generate first corresponding parity check code to store the groups of data and first corresponding parity check code into flash memory module as first blocks; reading out the groups of data from first blocks; executing error correction and de-randomize operation upon read out data to generate de-randomized data; executing randomize operation upon de-randomized data according to a set of seeds to generate randomized data; performing error code encoding upon randomized data to generate second corresponding parity check code; and, storing randomized data and second corresponding parity check code into flash memory module as second block; a cell of first block is used for storing data of first bit number which is different from second bit number corresponding to a cell of second block.

Abstract: Disclosed is an optical network unit (ONU) capable of reporting current Dynamic Bandwidth Report upstream (DBRu) information to an optical line terminal (OLT) according to the amount variation of to-be-transmitted upstream data in a buffer. The ONU includes: the buffer temporarily storing the to-be-transmitted upstream data; a register circuit recording previous data amount information related to the previous data amount of the buffer at a previous time point earlier than a current time point; a DBRu information generating circuit generating the current DBRu information according to an amount difference and a current data amount of the buffer at the current time point, wherein the amount difference is dependent on the difference between the previous data amount information and current data amount information that is dependent on the current data amount; and a transmitting circuit transmitting the current DBRu information to the OLT.

Abstract: An example non-transitory computer-readable medium storing machine-readable instructions that, when executed by a processor, cause the processor to: set a graphical processing unit (GPU) power allocation, the GPU power allocation indicating power available for use by a GPU. The processor sets a processor power allocation, the processor power allocation indicating power available for use by the processor. The processor receives a GPU usage value and modifies the GPU power allocation to a modified GPU power allocation based on the GPU usage value. The processor modifies the processor power allocation to a modified processor power allocation based on the modification of the GPU power allocation.

Abstract: A memory structure including a first select transistor, a first floating gate transistor, a second select transistor, a second floating gate transistor, and a seventh doped region is provided. The first select transistor includes a select gate, a first doped region, and a second doped region. The first floating gate transistor includes a floating gate, the second doped region, and a third doped region. The second select transistor includes the select gate, a fourth doped region, and a fifth doped region. The second floating gate transistor includes the floating gate, the fifth doped region, and a sixth doped region. A gate width of the floating gate in the second floating gate transistor is greater than a gate width of the floating gate in the first floating gate transistor. The floating gate covers at least a portion of the seventh doped region.

Abstract: An automatic retractable connecting cable and an associated plug are disclosed which the retractable connecting cable has a first connector and a second connector mounted respectively at two ends of a cable and a coupler. The coupler is configured for retaining the first connector and the second connector which makes the first connector, the second connector and the cable connected in a pile. plug comprises a movable plug and an adapter. The movable plug as a plug pattern formed on a side of the movable plug, and a first interface is formed on another side of the movable plug. The plug pattern is configured for operatively coupled to a socket of a mobile device. The adapter is connected to the connecting cable, and comprises a second interface. The second interface is configured to connect the first interface, wherein the second interface is rotatable relatively to the first interface.

Abstract: A power rail design method is disclosed that includes the steps outlined below. A plurality of power rails and a plurality of power domains corresponding thereto in an integrated circuit design file are identified. A design rule check for a plurality of circuit units in the integrated circuit design file is performed to retrieve a plurality of non-violating circuit regions that correspond to the power rails in each of the power domains. The power rails corresponding to at least part of the plurality of non-violating circuit regions in the integrated circuit design file are widened to occupy at least part of the non-violating circuit regions for the plurality of power rails.

Abstract: A method for manufacturing and a method for decolorizing dioctyl terephthalate are provided. The decolorizing dioctyl terephthalate includes: providing an unpurified dioctyl terephthalate; mixing the unpurified dioctyl terephthalate with a reducing agent and an adsorption medium to obtain a first decolorizing product; and mixing the first decolorizing product with a decolorizing adsorbent material to obtain a second decolorizing product. The method for manufacturing dioctyl terephthalate includes: a transesterification step, an alkaline washing and neutralization step, a redox step, a decolorization step and a stripping step; the decolorizing adsorbent material has an acid value between 0.1 and 2 mg KOH/g, a relative humidity between 2 and 10%, and a fineness between 80 and 100 cm2 /g.

Abstract: A method for fabricating semiconductor device includes: forming a first semiconductor layer and an insulating layer on a substrate; removing the insulating layer and the first semiconductor layer to form openings; forming a second semiconductor layer in the openings; and patterning the second semiconductor layer, the insulating layer, and the first semiconductor layer to form fin-shaped structures.

Abstract: A biosensor is provided. The biosensor includes a substrate, photodiodes, pixelated filters, an excitation light rejection layer and an immobilization layer. The substrate has pixels. The photodiodes are disposed in the substrate and correspond to one of the pixels, respectively. The pixelated filters are disposed on the substrate. The excitation light rejection layer is disposed on the pixelated filter. The immobilization layer is disposed on the excitation light rejection layer.

Abstract: A power hank is provided that comprises a body, a battery module and a plug assembly. The battery module is mounted inside the body. The plug assembly is pivotally connected to a first end of the body, electrically connects to the battery module, and has a plug, wherein the plug is corresponded to a socket and is configured to allow the battery module charges a mobile device. Accordingly, the power bank of the present invention does not require additional charging cable for charging the mobile device. The pivotal structure of the present invention allows the plug to rotate relative to the body which breaks out the limits of the conventional cover-type power bank.

Abstract: A method of fabricating a semiconductor device includes the following steps. A substrate is provided. The substrate includes a pixel region having a first conductive region and a logic region having a second conductive region. A dielectric layer is formed on the substrate to cover the first conductive region. A first contact opening is formed in the dielectric layer to expose the first conductive region. A doped polysilicon layer is sequentially formed in the first contact opening. A first metal silicide layer is formed on the doped polysilicon layer. A second contact opening is formed in the dielectric layer to expose the second conductive region. A barrier layer and a metal layer are respectively formed in the first contact opening and the second contact opening.

Abstract: A method for determining and controlling performance of pre-charge operations of a plurality of source lines in an ESL system includes: obtaining voltage data of a plurality of lines of a frame to be displayed by a display module in the ESL system; determining whether pre-charge of the source lines in a rest period of a first line is required according to an amount of forthcoming voltage transitions to be generated on the source lines and accordingly obtaining a determination result; and controlling performance of pre-charge operations of the source lines in the rest period of the first line according to the determination result. When the amount of forthcoming voltage transitions to be generated on the source lines exceeds a predefined threshold, pre-charge of the source lines in the rest period of the first line is determined as required.