Abstract: A material cutting and grinding device is provided. The material cutting and grinding device includes a shaft, a rotor assembly, a cutting grinding sheet, a fixture and a channel set. The rotor assembly includes a housing, a rotor, an air intake opening, blades and accommodating grooves. The rotor is accommodated in a holding groove of the housing. The rotor is sleeved on the shaft. The accommodating grooves are passed through the rotor. The blades are passed through the accommodating grooves. The cutting grinding sheet is connected to the other end of the shaft. The fixture clamps the cutting grinding sheet. The channel set includes a shaft channel and a gas channel. The shaft channel is passing through the shaft. The gas channel is disposed on the fixture. The gas channel is connected to the shaft channel.

Abstract: A method includes: abutting a first logic cell having a first cell height to a first memory cell having the first cell height; forming a first conductive rail and a second conductive rail at opposite sides of the first memory cell, respectively; forming a plurality of first conductive rails between the first conductive rail and the second conductive rail; forming a third conductive rail and a fourth conductive rail at opposite sides of the first logic cell, respectively; and forming a plurality of second conductive rails between the third conductive rail and the fourth conductive rail. An amount of the plurality of second conductive rails is larger than an amount of the plurality of first conductive rails.

Abstract: A method includes: abutting a first logic cell having a first cell height to a first memory cell having the first cell height; forming a first conductive rail and a second conductive rail at opposite sides of the first memory cell, respectively; forming a plurality of first conductive rails between the first conductive rail and the second conductive rail; forming a third conductive rail and a fourth conductive rail at opposite sides of the first logic cell, respectively; and forming a plurality of second conductive rails between the third conductive rail and the fourth conductive rail. An amount of the plurality of second conductive rails is larger than an amount of the plurality of first conductive rails.

Abstract: A semiconductor device includes at least one memory cell and at least one logic cell. The at least one logic cell is disposed next to the at least one memory cell. The at least one logic cell includes fins. The fins are separated into fin groups for forming transistors. A distance between two adjacent groups of the plurality of fin groups is different from a distance between another two adjacent groups of the plurality of fin groups.

Abstract: A semiconductor device includes a first transistor disposed over a substrate, a second transistor disposed over the first transistor, and a conductive trace. The first transistor includes first conductive segments, corresponding to drain and source terminals of the first transistor and extending in a first direction, on a first layer. The second transistor includes second conductive segments, corresponding to drain and source terminals of the second transistor and extending in the first direction, on a second layer above the first layer. The conductive trace extends on a third layer. The first to third layers are separated from each other in the first direction, and the third layer is interposed between the first and second layers. The first conductive segments, the second conductive segments, and the conductive trace overlap in a layout view.

Abstract: A semiconductor device includes a first transistor disposed over a substrate, a second disposed over the first transistor, and a conductive trace. The first transistor includes a first active area extending on a first layer. The second transistor includes a second active area extending on a second layer above the first layer. The conductive trace extends on a third layer. The first to third layers are separated from each other in a first direction, and the third layer is interposed between the first and second layers. The first active area, the second active area, and the conductive trace overlap in a layout view.

Abstract: A semiconductor device includes at least one memory cell and at least one logic cell. The at least one logic cell is disposed next to the at least one memory cell. The at least one logic cell includes fins. The fins are separated into fin groups for forming transistors. A distance between two adjacent groups of the plurality of fin groups is different from a distance between another two adjacent groups of the plurality of fin groups.

Abstract: A method includes: abutting a first logic cell having a first cell height to a first memory cell having the first cell height; forming a first conductive rail and a second conductive rail at opposite sides of the first memory cell, respectively; forming a plurality of first conductive rails between the first conductive rail and the second conductive rail; forming a third conductive rail and a fourth conductive rail at opposite sides of the first logic cell, respectively; and forming a plurality of second conductive rails between the third conductive rail and the fourth conductive rail. An amount of the plurality of second conductive rails is larger than an amount of the plurality of first conductive rails.

Abstract: A semiconductor device includes at least one memory cell and at least one logic cell. The at least one logic cell is disposed next to the at least one memory cell and includes a plurality of fins. The plurality of fins are separated into a plurality of fin groups for forming transistors. A distance between two adjacent groups of the plurality of fin groups is different from a distance between another two adjacent groups of the plurality of fin groups. A method is also disclosed herein.

Abstract: A semiconductor device includes: a first multi-gate field effect transistor (FET) disposed over a substrate, the first multi-gate FET including a first active region; and a second multi-gate FET disposed over the first multi-gate FET, the second multi-gate FET including a second active region. The first active region and the second active region are not fully projected in a vertical direction perpendicular to the substrate.

Abstract: A semiconductor device includes: a first multi-gate field effect transistor (FET) disposed over a substrate, the first multi-gate FET including a first active region; and a second multi-gate FET disposed over the first multi-gate FET, the second multi-gate FET including a second active region. The first active region and the second active region are not fully projected in a vertical direction perpendicular to the substrate.

Abstract: A semiconductor device includes at least one memory cell and at least one logic cell. The at least one logic cell is disposed next to the at least one memory cell and includes a plurality of fins. The plurality of fins are separated into a plurality of fin groups for forming transistors. A distance between two adjacent groups of the plurality of fin groups is different from a distance between another two adjacent groups of the plurality of fin groups. A method is also disclosed herein.

Abstract: A sense amplifier (SA) includes a semiconductor substrate having a source/drain (S/D) diffusion region; a pair of SA sensing devices both disposed in the S/D diffusion region; an SA enabling device disposed in the same S/D diffusion region as where the pair of SA sensing devices are disposed in; and a sense amplifier enabling signal (SAE) line for carrying an SAE signal, for turning on the SA enabling device to discharge one of the pair of SA sensing devices during a data read from the sense amplifier, wherein the SA enabling device is arranged to provide buffer protection for source/drain terminals of the pair of SA sensing devices.

Abstract: A wind power generation device includes a wind blocking structure, which is in a box-shaped structure fixed on ground by a bottom plane thereof; a wind vane rotating body including a rotating shaft and vanes fixed on the rotating shaft and arranged at equal angle intervals, wherein the rotating shaft is mounted on two bearings of the wind blocking structure, and the vanes are rotatable inside the box-shaped structure; a power generator connected to the rotating shaft and fixed on the box-shaped structure by a linking plate. When wind blows to the wind blocking structure to rotate the wind vane rotating body, the power generator is driven by the rotating shaft to generate electrical power. The wind power generation device can include at least two wind vane rotating bodies, or area enlarging structures added on the vanes, to increase windward areas of the vanes.

Abstract: A semiconductor device includes: a first multi-gate field effect transistor (FET) disposed over a substrate, the first multi-gate FET including a first active region; and a second multi-gate FET disposed over the first multi-gate FET, the second multi-gate FET including a second active region. The first active region and the second active region are not fully projected in a vertical direction perpendicular to the substrate.

Abstract: A bit line architecture for dual-port static random-access memory (DP SRAM) is provided. An array of memory cells is arranged in rows and columns, and comprises a first subarray and a second subarray. A first pair of complementary bit lines (CBLs) extends along a column, from a first side of the array, and terminates between the first and second subarrays. A second pair of CBLs extends from the first side of the array, along the column, to a second side of the array. The CBLs of the second pair of CBLs have stepped profiles between the first and second subarrays. A third pair of CBLs and a fourth pair of CBLs extend along the column. The first and third pairs of CBLs electrically couple to memory cells in the first subarray, and the second and fourth pairs of CBLs electrically couple to memory cells in the second subarray.

Abstract: A computing appliance for geometric planimetry is provided, comprising a container, a vertical dividing rule, a horizontal dividing rule, a horizontal point line and a middle point line. A fluid is filled into the container, and the vertical dividing rule, the horizontal dividing rule, the horizontal point line and the middle point line are configured on a same instructing surface of the container and arranged on each of the periphery surrounding like a rectangle. When the container is vertically disposed, a fluid level is aligned with the horizontal point line. And, when the container is tilted to form at least one angle, an area of at least one geometric shape can be derived by employing the vertical dividing rule, the horizontal dividing rule, the horizontal point line and the middle point line.

Abstract: A wind power generation device includes a wind blocking structure, which is in a box-shaped structure fixed on ground by a bottom plane thereof; a wind vane rotating body including a rotating shaft and vanes fixed on the rotating shaft and arranged at equal angle intervals, wherein the rotating shaft is mounted on two bearings of the wind blocking structure, and the vanes are rotatable inside the box-shaped structure; a power generator connected to the rotating shaft and fixed on the box-shaped structure by a linking plate. When wind blows to the wind blocking structure to rotate the wind vane rotating body, the power generator is driven by the rotating shaft to generate electrical power. The wind power generation device can include at least two wind vane rotating bodies, or area enlarging structures added on the vanes, to increase windward areas of the vanes.

Abstract: A pneumatic vertical transportation device comprises an expandable cylinder, a carriage rack, an air piping controller, and an air exhauster. The expandable cylinder includes a bellow body, with one end hanging carriage rack and the other end connected with a fixing plate. The expandable cylinder is connected with the air piping controller. While the carriage rack is rising, the air exhauster draws air from the bellow body through the air piping controller to gradually decrease pressure inside. Once pressure difference exceeds weight of the carriage rack, the carriage rack begins to rise. Volume of the expandable cylinder is reduced such that the lower disc of the expandable cylinder approaches top, and the expandable cylinder is maintained at low pressure state. While the carriage rack is descending, air is fed into the expandable cylinder through the air piping controller to gradually expand the bellow body, letting the carriage rack descend.

Abstract: A method of automatically extracting energy from flowing liquid and a device using the same are disclosed. The device includes a paddle rod and a swing device. The paddle rod includes two paddles to bear a pushing force of flowing liquid. When the paddle rod is swung, one of the two paddle enters water and the other paddle leaves from water surface. When the paddle in the water bears a pushing force of flowing liquid to drive a rotary body to swing, the paddle rod moves upwardly and leaves the water surface, and the other paddle enters water to bear the pushing force, and after the rotary body is driven to swing reversely, the paddle rod moves upwardly and leaves water surface, and at the same time the paddle enters the water to bear the pushing force, to drive the rotary body to swing reversely.