Abstract: The present invention discloses a method for fabricating a nanoscale thermoelectric device, which comprises steps: providing at least one template having a group of nanoscale pores; forming a substrate on the bottom of the template; injecting a molten semiconductor material into the nanoscale pores to form a group of semiconductor nanoscale wires; removing the substrate to obtain a semiconductor nanoscale wire array; and using metallic conductors to cascade at least two semiconductor nanoscale wire arrays to form a thermoelectric device having a higher thermoelectric conversion efficiency.

Abstract: The present invention discloses a method for fabricating a nanoscale thermoelectric device, which comprises steps: providing at least one template having a group of nanoscale pores; forming a substrate on the bottom of the template; injecting a molten semiconductor material into the nanoscale pores to form a group of semiconductor nanoscale wires; removing the substrate to obtain a semiconductor nanoscale wire array; and using metallic conductors to cascade at least two semiconductor nanoscale wire arrays to form a thermoelectric device having a higher thermoelectric conversion efficiency.

Abstract: The present invention discloses a structure of camphor-derived chiral auxiliary with a general formula (I), wherein R1 and R2 groups are independently hydrogen or C1 to C10 alkyl, X group is oxygen, two hydrogen atoms, or sulfur, and Y group is a functional group with stereo effect. Moreover, this invention also discloses a method for forming the above-mentioned chiral auxiliary.

Abstract: The present invention discloses a structure of camphor-derived chiral auxiliary with a general formula (I), wherein R1 and R2 groups are independently hydrogen or C1 to C10 alkyl, X group is oxygen, two hydrogen atoms, or sulfur, and Y group is a functional group with stereo effect. Moreover, this invention also discloses a method for forming the above-mentioned chiral auxiliary.

Abstract: The present invention pertains to a method of manufacturing an aluminum oxide film with arrayed nanometric pores, wherein a commercial aluminum substrate is provided firstly; then the aluminum substrate is annealed and then electro-polished in order to have a mirror-like surface, and then anodized in order to form a aluminum oxide film with a plurality of nanometric pores, which are aligned in array, and then annealed in order that an oxidation reaction can happen thereon and generates oxide, which via self-diffusion, fills some of smaller pores with the pores size being uniformed; lastly a pore-widening is undertaken in order to increase the diameters of the pores. The present invention can accomplish the nanometric pores aligned in array and with an uniform pore diameter, and simultaneously have the advantages of simplified manufacturing process, easier operational control and reduced cost.