Abstract: A semiconductor device and an electronic system, the device including a substrate including a cell array region and a connection region; a stack including electrodes vertically stacked on the substrate; a source conductive pattern on the cell array region and between the substrate and the stack; a dummy insulating pattern on the connection region and between the substrate and the stack; a conductive support pattern between the stack and the source conductive pattern and between the stack and the dummy insulating pattern; a plurality of first vertical structures on the cell array region and penetrating the electrode structure, the conductive support pattern, and the source structure; and a plurality of second vertical structures on the connection region and penetrating the electrode structure, the conductive support pattern, and the dummy insulating pattern.

Abstract: Disclosed is a miniaturized battery module in which a space except for a space of a battery cell is minimized and the number of components is reduced. The miniaturized battery module includes a cell assembly configured by assembling a plurality of battery cells, an upper frame inserted into an outer upper surface of the cell assembly, a lower frame inserted into an outer lower surface of the cell assembly and fastened to the upper frame, and first and second endplates fastened to two opposite ends of the cell assembly and configured to fix the plurality of battery cells. In this case, at least two or more of the plurality of the battery cells are arranged side by side, and the upper frame and the lower frame are fastened by welding.

Abstract: A semiconductor package includes a lower semiconductor chip having a first surface and a second surface, an upper semiconductor chip on the first surface, a first insulating layer between the first surface and the upper semiconductor chip, a second insulating layer between the first insulating layer and the upper semiconductor chip, and a connection structure penetrating the first insulating layer and the second insulating layer and being connected to the lower semiconductor chip and the upper semiconductor chip. The connection structure includes a first connecting portion and a second connecting portion, which are respectively disposed in the first insulating layer and the second insulating layer. A width of the second connecting portion is greater than a width of the first connecting portion. A thickness of the second connecting portion is greater than a thickness of the first connecting portion.

Abstract: A lithium secondary battery includes an anode including an anode current collector and an anode active material layer formed thereon, the anode active material layer including an acryl-based binder, a cathode facing the anode, an anode tab electrically connected to the anode, and a cathode tab electrically connected to the cathode. A content of the acryl-based binder and a distance between the cathode tab and the anode tab satisfies a predetermined relation to provide the lithium secondary battery having improved mechanical stability and battery performance.

Abstract: A semiconductor memory device includes a substrate with a cell array region and a connection region, an electrode structure including electrodes stacked on the substrate and having a staircase structure on the connection region, a vertical channel structure on the cell array region to penetrate the electrode structure and electrically connected to the substrate, a dummy structure on the connection region to penetrate the staircase structure, and a first sidewall oxide pattern interposed between the substrate and the dummy structure. The dummy structure includes an upper portion that is on the substrate, a middle portion that is in contact with the first sidewall oxide pattern, and a lower portion that is below the middle portion. With increasing vertical distance from the upper portion, a diameter of the middle portion decreases until it reaches its smallest value and then increases.

Abstract: A method for testing an IT system automatically, when it comes to testing based on real transaction data including: (a) obtaining a transaction message by capturing a network packet transmitted and received between a user system and a transaction processing system; (b) transmitting a request data included in the transaction message to the system under test; (c) receiving a response data from the system under test; and (d) comparing the response data received from the system under test and a response data included in the transaction message and determining success or failure, is provided.

Abstract: A driving device of a semiconductor switch includes a semiconductor switch configured to perform a switching operation by a gate driving voltage, and transfer a main power connected to a first switch terminal, to a load connected to a second switch terminal; a control signal generation circuit configured to detect a change in a control signal input power and generate and output a corresponding control signal, based on a lower negative voltage between negative voltages of the main power and the control signal input power; a control signal detection circuit configured to detect the control signal and output a corresponding driving control signal; a gate driving voltage generation circuit configured to be driven by the driving control signal and output the gate driving voltage; and an internal power generation circuit configured to be supplied with the main power, and generate a power supply voltage.

Abstract: Embodiments of the present invention provide a lithium secondary battery including anode active material layers which have a multi-layered structure and include carbon-based active materials having different contents from each other, thereby improving mechanical stability and battery performance.

Abstract: A vertical memory device may include a channel connecting pattern on a substrate, gate electrodes spaced apart from each other in a first direction on the channel connecting pattern, and a channel extending in the first direction through the gate electrodes and the channel connecting pattern. Each of the electrodes may extend in a second direction substantially parallel to an upper surface of the substrate, and the first direction may be substantially perpendicular to the upper surface of the substrate. An end portion of the channel connecting pattern in a third direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the second direction may have an upper surface higher than an upper surface of other portions of the channel connecting pattern except for a portion thereof adjacent the channel.

Abstract: A driving device of a semiconductor switch includes a semiconductor switch configured to perform a switching operation by a gate driving voltage, and transfer a main power connected to a first switch terminal, to a load connected to a second switch terminal; a control signal generation circuit configured to detect a change in a control signal input power and generate and output a corresponding control signal, based on a lower negative voltage between negative voltages of the main power and the control signal input power; a control signal detection circuit configured to detect the control signal and output a corresponding driving control signal; a gate driving voltage generation circuit configured to be driven by the driving control signal and output the gate driving voltage; and an internal power generation circuit configured to be supplied with the main power, and generate a power supply voltage.

Abstract: Provided are a novel [1,2,4]triazolo[4,3-a]quinoxaline derivative, a method for preparing the same, and a pharmaceutical composition for preventing or treating bromodomain extra-terminal (BET) protein-related diseases including cancer and autoimmune diseases, containing the same as an active ingredient.

Abstract: Provided is a porous lithium composite phosphate-based compound containing lithium and having open pores formed in primary particles. As the open pores are formed in the primary particles themselves, a contact area between an electrolyte and the lithium composite phosphate-based compound is maximized, and low conductivity is compensated for, such that a diffusion rate of lithium ions is remarkably increased, and when the lithium composite phosphate-based compound is used as an active material of a secondary battery, the secondary battery may be charged and discharged at a high speed. Additionally, there are advantages in that an electrode density may be significantly increased in addition to the increase in the diffusion rate of the lithium ions, and charge and discharge cycle characteristics may be significantly stable.

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. A semiconductor memory device includes a stack structure that includes a plurality of electrodes and a plurality of dielectric layers that are alternately stacked on a substrate, a vertical channel structure that penetrates the stack structure, and a conductive pad on the vertical channel structure. The vertical channel structure includes a semiconductor pattern and a vertical dielectric layer between the semiconductor pattern and the electrodes. An upper portion of the semiconductor pattern includes an impurity region that includes a halogen element. The upper portion of the semiconductor pattern is adjacent to the conductive pad.

Abstract: A method for manufacturing an extreme ultraviolet (EUV) pellicle structure may include preparing a pellicle membrane that includes an intermediate layer structure in which EUV transmission layers and heat dissipation layers are alternately stacked, a first thin layer disposed on a top surface of the intermediate layer structure, and a second thin layer disposed on a bottom surface of the intermediate layer structure and having a heat emissivity lower than that of the first thin layer, and disposing a cooling structure for absorbing heat from the pellicle membrane on an edge sidewall of the pellicle membrane at which the heat dissipation layers are exposed.

Abstract: A vertical memory device may include a channel connecting pattern on a substrate, gate electrodes spaced apart from each other in a first direction on the channel connecting pattern, and a channel extending in the first direction through the gate electrodes and the channel connecting pattern. Each of the electrodes may extend in a second direction substantially parallel to an upper surface of the substrate, and the first direction may be substantially perpendicular to the upper surface of the substrate. An end portion of the channel connecting pattern in a third direction substantially parallel to the upper surface of the substrate and substantially perpendicular to the second direction may have an upper surface higher than an upper surface of other portions of the channel connecting pattern except for a portion thereof adjacent the channel.

Abstract: Disclosed is a carbon dioxide absorbent and a carbon dioxide separation method using the same that greatly reduces energy consumption due to a small amount of latent heat required in regeneration of absorbents, enhances CO2 absorption rate, undergoes almost no thermal denaturation even at high temperatures while absorbing carbon dioxide, and results in a considerable reduction of the cost associated with absorption of carbon dioxide.

Abstract: A three-dimensional semiconductor memory device is disclosed. The device may include a first source conductive pattern comprising a polycrystalline material including first crystal grains on a substrate, the substrate may comprising a polycrystalline material including second crystal grains, a grain size of the first crystal grains being smaller than a grain size of the second crystal grains, a stack including a plurality of gate electrodes, the plurality of gates stacked on the first source conductive pattern, and a vertical channel portion penetrating the stack and the first source conductive pattern, and the vertical channel portion being in contact with a side surface of the first source conductive pattern.

Abstract: Disclosed are a solid electrolyte composite having high flexibility and strength, a method of manufacturing the same and an electrochemical device including the same. The solid electrolyte composite includes a matrix including a solid electrolyte, and fibrous polymers located in the same layer as the matrix and distributed in the matrix, and is manufactured by preparing a first solution including a polymer material, preparing a second solution including a solid electrolyte, producing fibrous polymers by electrospinning the first solution and simultaneously obtaining a structure configured such that the solid electrolyte is loaded between the fibrous polymers by electrospraying the second solution, and pressing the structure.

Abstract: Disclosed is a washing machine and a home appliance including a plurality of doors, a damper configured to buffer pivoting of the plurality of doors, and a structure by which each of the plurality of doors smoothly opened/shut.

Abstract: A lithium secondary battery includes a cathode, a separator, and an anode including an anode current collector and an anode active material layer formed on the anode current collector and facing the cathode with the separator interposed therebetween. The anode active material layer includes a first anode active material layer formed on the anode current collector and including a first anode active material and a first anode binder containing a styrene-butadiene-based rubber (SBR) binder and a second anode active material layer formed on the first anode active material layer and including a second anode active material and a second anode binder containing a acryl-based binder. Each of the first anode active material and the second anode active material includes a silicon-based active material and a graphite-based material and contains 2 to 9.5 parts by weight of silicon with respect to the 100 part by weight of the graphite-based active material.