Abstract: An apparatus for and a method of processing a substrate are provided. The apparatus for processing a substrate includes a chamber having a processing space therein, a substrate support member disposed inside the chamber and supporting the substrate, an upper plate disposed above the substrate support member and having a plurality of through-holes, a sensor unit disposed inside the upper plate and measuring an induced electromotive force value generated in a measurement through-hole included in the plurality of through-holes, and a detection unit detecting an amount of ions passing through the measurement through-hole based on the induced electromotive force value.

Abstract: Disclosed is a method for removing a film from a substrate by irradiating a plurality of unit pulse laser beams to an edge region of the substrate. The method includes a first irradiation operation for irradiating a plurality of unit pulse laser beams onto the substrate while the substrate is rotating, and a second irradiation operation for irradiating a plurality of unit pulse laser beams to regions of the substrate onto which the unit pulse laser beams are not irradiated in the first irradiation operation.

Abstract: A nonvolatile memory device with improved reliability is provided. The nonvolatile memory device comprises a substrate, a mold structure including a plurality of word lines stacked on the substrate, a first word line cut region configured to cut the mold structure, a first channel structure spaced apart from the first word line cut region by a first distance, and disposed in the mold structure and the substrate, and a second channel structure spaced apart from the first word line cut region by a second distance, and disposed in the mold structure and the substrate, wherein the second distance is greater than the first distance, a first width of the first channel structure is different from a second width of the second channel structure, and a first length of the first channel structure is different from a second length of the second channel structure.

Abstract: A calibration device is coupled to a communication line shared by plural devices. The calibration device is configured to perform an iterative eye width scanning by adjusting a set voltage level by a preset level from a first voltage level to a reference center voltage level, wherein the first voltage level corresponds to a cross point where values of signals or data, which are transmitted via the communication lines, are changed in different directions; and determine, as a zero crossing for the signals or the data, a voltage level corresponding to a largest value among a plurality of eye widths obtained through the iterative eye width scanning.

Abstract: A cassette holder for an automated teller machine according to one embodiment includes a first holding portion configured to hold a first cassette, a second holding portion configured to hold a second cassette having a different size from the first cassette, side links disposed at both side surfaces of the first holding portion and configured to move in a front-rear direction in association with movement of the first holding portion, and a locking means configured to lock or unlock the side links in a state in which the first holding portion is moved to a second position, wherein the first holding portion is provided to be movable in the front-rear direction between a first position at which the first holding portion is positioned at a front side of the second holding portion to hold the first cassette in the first holding portion and the second position at which the first holding portion is positioned at a rear side of the second holding portion to hold the second cassette in the second holding portion.

Abstract: A modified oligonucleotide including at least one modified nucleic acid, and a modified oligonucleotide-drug conjugate including a drug conjugated to the modified oligonucleotide. The modified oligonucleotide-drug conjugate exhibits high stability in the body and may exhibit an excellent anticancer effect. In a method for treating a cancer, the modified oligonucleotide-drug conjugate is administered to a subject in need thereof.

Abstract: One aspect of the present disclosure relates to a pharmaceutical composition for treating triple negative breast cancer, containing, as an active ingredient, a novel non-natural nucleic acid ligand that binds to both human serum albumin (HSA) and a G12D-mutation KRAS protein. The pharmaceutical composition exhibits an excellent effect on the treatment of primary or metastatic triple negative breast cancer, which is difficult to treat. In addition, one aspect of the present disclosure relates to a novel non-natural nucleic acid ligand binding to both human serum albumin (HAS) and a G12D-mutation KRAS protein, and a use thereof. The novel nucleic acid ligand may comprise a nucleic acid sequence of SEQ ID NO: 11 (GNA6AAG6CCGGA6GGCAGC666A6GC) [wherein, the second nucleic acid N is cystidine or gemcitabine and the part represented as 6 is 5-[N-(1-naphthylmethyl) carboxamide]-2?-deoxyuridine (Nap-dU)].

Abstract: One aspect of the present disclosure relates to a novel non-natural nucleic acid ligand that binds to human serum albumin (HSA), and to uses thereof. The novel non-natural nucleic acid ligand may include the nucleic acid sequence of SEQ ID NO: 8 (CAGG6CGAGC6G6ACGCG6G6G6GACC) [wherein the moiety indicated by 6 is 5-[N-(1-naphthylmethyl)carboxamide]-2?-deoxyuridine (Nap-dU)]. Meanwhile, one aspect of the present disclosure relates to a pharmaceutical composition for treating cancer, comprising a novel non-natural nucleic acid ligand that binds to human serum albumin as an active ingredient. The pharmaceutical composition exhibits excellent effects in the treatment of cancer.

Abstract: A calibration device is coupled to a communication line shared by plural devices. The calibration device is configured to perform an iterative eye width scanning by adjusting a set voltage level by a preset level from a first voltage level to a reference center voltage level, wherein the first voltage level corresponds to a cross point where values of signals or data, which are transmitted via the communication lines, are changed in different directions; and determine, as a zero crossing for the signals or the data, a voltage level corresponding to a largest value among a plurality of eye widths obtained through the iterative eye width scanning.

Abstract: The present disclosure relates to an electron transport layer for a perovskite solar cell, which is tin oxide (SnO2-x, 0<x<1) comprising oxygen vacancies, wherein the oxygen vacancies are passivated by oxidized black phosphorus quantum dots (O-BPs), and a perovskite solar cell including the same. The electron transport layer for a perovskite solar cell of the present disclosure can prevent phase transition to a structure having semiconductor properties not suitable for solar cells, such as ?-FAPbI3 or PbI2, due to the occurrence of iodine interstitials (Ii) in the perovskite structure caused by deficiency of oxygen atoms in SnO2-x at the interface, by passivating the oxygen vacancies with oxidized black phosphorus quantum dots (O-BPs) containing multiple P?O bonds.

Abstract: A non-volatile memory device may include a channel structure including a first stacking structure, a second stacking structure, a first channel structure penetrating the first stacking structure, and a second channel structure penetrating the second stacking structure. The second channel structure includes a first portion having a width that decreases or is maintained as the first portion extends toward the substrate, and a second portion having a width that increases as the second portion extends toward the substrate.

Abstract: A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.

Abstract: The inventive concept provides a method for treating a substrate. The method includes removing a film on the substrate by applying a pulsed laser to the rotating substrate, in which thickness of the film to be removed is measured and pulse energy of the pulsed laser is selected based on the measured thickness of the film.

Abstract: Provided is an unconstrained vibration damping metal sheet with foam pores. The unconstrained vibration damping metal sheet of the present invention comprises: a metal sheet; an organic-inorganic pretreatment layer containing an acrylic resin formed on the metal sheet; and a foam resin layer formed on the pretreatment layer, the foam resin layer containing, based on weight % thereof, a thermoplastic polyvinyl chloride resin: 40-80%, a plasticizer: 5-40%, a foaming agent: 0.1-10%, an oxide-based crosslinker: 1-4%, and spherical silica: 1-10%.

Abstract: The present disclosure relates to a method of controlling a plasma processing apparatus, and a plasma processing apparatus for performing the method. According to one embodiment of the present disclosure, a method of controlling a plasma processing apparatus includes supplying power having a sine wave from a high-frequency power source to a lower electrode to generate a plasma; and supplying power from the high-frequency power source to the lower electrode, to control an ion in the generated plasma, and when a voltage of a wafer disposed on the lower electrode has a negative peak value in a phase region, inputting a negative DC voltage to a focusing ring by a DC power source.

Abstract: A single poly non-volatile memory device is provided. The single poly non-volatile memory device is formed in a semiconductor substrate, and includes a sensing transistor, a selection transistor, and a capacitor, wherein a thickness of a selection gate insulating film is formed to be thicker than a thickness of a sensing gate insulating film, wherein a thickness of a control gate insulating film of the capacitor is formed to be the same, or greater than, a thickness of the sensing gate insulating film, and wherein the sensing gate of the sensing transistor and the control gate of the capacitor are physically and electrically connected to each other.

Abstract: An apparatus and system for treating a substrate includes a chamber having an inner space, a support unit in the inner space and configured to support and rotate the substrate, and first and second laser irradiation unit configured to irradiate first and second laser beams onto the substrate. The first laser irradiation unit includes a first laser light source configured to generate the first laser beam, and a first wavelength adjusting member configured to adjust a range of a wavelength of the first laser beam received from the first laser light source. The second laser beam, and a second wavelength adjusting member configured to adjust a range of a wavelength of the second laser beam received from the second laser light source.

Abstract: A substrate treating apparatus includes a chamber having a treatment space, a first power supply that is connected to a first component provided in the treatment space and transmits power having a first frequency to the first component, a second power supply that is provided in the treatment space, is connected to a second component different from the first component, and transmits power having a second frequency smaller than the first frequency to the second component, and a coupling blocking structure installed on a power line connected to the second power supply and the second component, wherein the coupling blocking structure is electrically connected to the power line and includes a conductive line having a coil shape.

Abstract: A single poly non-volatile memory device is provided. The single poly non-volatile memory device is formed in a semiconductor substrate, and includes a sensing transistor, a selection transistor, and a capacitor, wherein a thickness of a selection gate insulating film is formed to be thicker than a thickness of a sensing gate insulating film, wherein a thickness of a control gate insulating film of the capacitor is formed to be the same, or greater than, a thickness of the sensing gate insulating film, and wherein the sensing gate of the sensing transistor and the control gate of the capacitor are physically and electrically connected to each other.

Abstract: Provided is a manufacturing method of a stainless steel sheet having etching patterns. The method includes: coating a coating composition on a stainless steel sheet to form a coating layer; and forming a matte coated film layer, having an etching effect, on the coating layer. The coating composition comprises: 10 to 30 wt% of a silane-based compound, 0.5 to 6 wt% of an organic acid, 0.1 to 3 wt% of a vanadium compound, 0.1 to 3 wt% of a magnesium compound, and a remainder of a solvent.