Abstract: A clothes treatment apparatus and a control method thereof are disclosed. The clothes treatment apparatus includes a fixed nozzle device and a moving nozzle device to supply at least one of steam and heated air to clothes. As a result, the clothes may be washed effectively or refreshed.

Abstract: Disclosed is a water treatment apparatus which can extract clean water by means of the pressure of raw water. The disclosed water treatment apparatus comprises: a filter part which filters raw water; a storage part which stores clean water filtered by passing through at least a part of the filter part, the storage part having a first chamber and a second chamber of which the volume changes according to a change in the volume of the first chamber; an extraction part which is installed so as to provide the filtered clean water to a user; and an air supply part which is installed on a flow path connected to the storage part in order to supply air to either one of the first chamber or the second chamber of the storage part.

Abstract: A method of manufacturing a transparent pattern printed steel plate includes forming a printed paint film layer by jetting transparent ink onto at least one surface of a steel plate, and curing the printed paint film layer with ultraviolet light to form a cured printed paint film layer. Further, a method of manufacturing a transparent pattern printed steel plate includes preparing a steel plate having a color painted film layer formed on at least one surface thereof, forming a printed paint film layer by jetting transparent ink onto the color painted film layer, and curing the printed paint film layer to form a cured printed paint film layer.

Abstract: Disclosed are a water storage tank bladder, a manufacturing method therefor, the water storage tank including the bladder, and a water treatment apparatus including the water storage tank. According to one embodiment of the present invention, the water storage tank bladder used in the water storage tank to receive and store water and discharge the stored water has a lower side of which the thickness can be thicker than the thickness of the upper side of the bladder and thicker than the thickness of the lateral sides of the bladder.

Abstract: Provided are photomasks, methods of fabricating the photomasks, and methods of fabricating a semiconductor device by using the photomasks, in which a critical dimension (CD) of a pattern of a specific region of the photomask is corrected to improve the distribution of CDs of the pattern formed on a wafer. The photomasks may include a substrate and a light-blocking pattern formed on the substrate that includes an absorber layer and an anti-reflection coating (ARC) layer. The light-blocking pattern may include at least one of a first corrected area in which a top surface of the absorber layer is exposed, and a second corrected area in which a correction layer is formed on the ARC layer.

Abstract: A clothes treatment apparatus (100) and a control method thereof are disclosed. The clothes treatment apparatus (100) includes a cabinet (1) closed by a door (3) and an accommodation space (2) provided in the cabinet (1), consisting for example of a first accommodation space (21) and a second accommodation space (23), wherein a mechanism chamber (25) is provided. The clothes treatment apparatus (100) includes a fixed nozzle device (4) comprising heated air supply holes (41), steam supply holes (43) and detergent supply holes (45) and a moving nozzle device (5) which reciprocates along a guide part (51). Clothes are held by a hanger (7) in the accommodation space (2).

Abstract: In an embodiment, a semiconductor memory device may include a memory cell array, a plurality of page buffers, and a control logic. The memory cell array may include a plurality of memory cells. The plurality of page buffers may be coupled to a plurality of bit lines of the memory cell array, respectively. The control logic may control the plurality of page buffers to perform a read operation on the memory cell array. Each of the plurality of page buffers may perform data sensing by changing a voltage of a page buffer sensing signal after an internal node is precharged.

Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a P type well region and an N type well region formed in a substrate, a gate insulating layer having a non-uniform thickness and formed on the P type well region and the N type well region, a gate electrode formed on the gate insulating layer, a P type well pick-up region formed in the P type well region, and a field relief oxide layer formed in the N type well region between the gate electrode and the drain region.

Abstract: Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate.

Abstract: There are provided a current sensing circuit and a memory device having the same. A current sensing circuit includes a current mirror unit suitable for outputting a first voltage and a second voltage; a chunk current controller suitable for generating the first voltage by generating a current through at least one page buffer; a fail bit counter suitable for adjusting a current at a first node where the first voltage is output in response to fail bits received from the page buffer; an allowed bit counter suitable for adjusting the current at the first node according to predetermined allowed bits; and a target range setting unit suitable for adjusting a current at a second node where the second voltage is output in response to a target code.

Abstract: Three-dimensional (3D) semiconductor memory devices capable of improving reliability may be provided. For example, a three dimensional (3D) memory device, in which a plurality of memory cell strings are vertically arranged, may include a substrate, a stack structure of alternating a plurality of interlayer dielectric (ILD) layers and a plurality of gate electrodes, at least one of the ILD layers including pores, a vertical structure penetrating the stack structure and electrically connected to the substrate, and a data storage layer between the stack structure and the vertical structure.

Abstract: The present invention relates to a primerless base painting composition for parts of a vehicle comprising a resin component including a non-chlorinated modified polyolefin resin and an acrylic resin; a pigment; additives; and a solvent selected from an aqueous solvent and an oil solvent, a kit comprising the same, painted parts of a vehicle comprising the same, and a method for painting and varnishing parts of a vehicle using the same.

Abstract: Provided is a user instruction input device operating in a three-dimensional space. The user instruction input device includes a first sensor that senses the angular rate of the device centering on at least one axis, a second sensor that senses the acceleration of the device at least for one direction, and a processing unit that calculates a first rotation angle in a coordinate system independent of the attitude of the first device from the output value of the first sensor, calculates a second rotation angle in the coordinate system from the output value of the second sensor, and calculates the final attitude angle by combining the first rotation angle and the second rotation angle.

Abstract: Semiconductor devices are provided. A semiconductor device includes a stack of alternating insulation layers and gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a charge storage structure on the channel material, in the channel recess. Moreover, the semiconductor device includes a gate insulation layer on the channel material. The gate insulation layer undercuts a portion of the channel material. Related methods of forming semiconductor devices are also provided.

Abstract: A washing device for a water treatment apparatus is provided. The washing device includes circulation members connected to passages of the water treatment apparatus to circulate wash water through the passages of the water treatment apparatus, a circulation module connected to the circulation members for circulating the wash water through the passages of the water treatment apparatus, with the circulation members thereby washing the passages of the water treatment apparatus, a drainpipe connected to the circulation members, a passage switching unit connected to a portion where the circulation members are coupled to the drainpipe to switch passage of the wash water, and a circulation pump connected to the circulation members to selectively circulate the wash water in the connection pipes through the drainpipe or the passages of the water treatment apparatus.

Abstract: There are provided a semiconductor memory device and an operating method thereof. A semiconductor memory device includes a memory cell array including a plurality of memory strings, a peripheral circuit for performing a program operation on the plurality of memory strings, and a control logic for controlling the peripheral circuit to apply a program voltage increased by at least two steps to a selected word line among a plurality of word lines connected to the plurality of memory strings and sequentially apply an initial setting voltage and a pass voltage to word lines adjacent to the selected word line, wherein the initial setting voltage is decreased as the program voltage is increased.

Abstract: Three-dimensional (3D) semiconductor memory devices capable of improving reliability may be provided. For example, a three dimensional (3D) memory device, in which a plurality of memory cell strings are vertically arranged, may include a substrate, a stack structure of alternating a plurality of interlayer dielectric (ILD) layers and a plurality of gate electrodes, at least one of the ILD layers including pores, a vertical structure penetrating the stack structure and electrically connected to the substrate, and a data storage layer between the stack structure and the vertical structure.

Abstract: Semiconductor devices are provided. A semiconductor device includes a stack of alternating insulation layers and gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a charge storage structure on the channel material, in the channel recess. Moreover, the semiconductor device includes a gate insulation layer on the channel material. The gate insulation layer undercuts a portion of the channel material. Related methods of forming semiconductor devices are also provided.

Abstract: Provided is a resin composition for an under coat of an UV coating layer and a coated steel sheet using the resin composition. The coated steel sheet comprises a material steel sheet; an under coat layer including a cured product of a resin composition for the under coat layer which contains a main resin and a metal powder, the under coat layer being formed on one side or both sides of the material steel sheet; and a top coat layer formed on the under coat layer and containing a radical compound, thereby providing a superior appearance, scratch resistance, corrosion resistance and superior weldability.

Abstract: Disclosed is a method for preparing a hot-melt adhesive composition and a hot-melt adhesive composition prepared thereby. The method comprises: preparing and mixing raw materials, including a butyl rubber, an ethylene propylene diene (EPDM) rubber, a styrene block copolymer, an amorphous poly-alpha-olefin (APAO) and a tackifier resin; and performing vacuum degassing of the mixed raw materials, wherein the styrene block copolymer comprises a styrene-isoprene-styrene (SIS) rubber. The hot-melt adhesive composition has high resistance in temperature cycles between low and high temperatures so as to maintain its physical properties, and thus has an excellent property of sealing a headlamp for a long period of time until the end of the lifespan of the headlamp. Also, the composition generates no gas in the sealed state of the headlamp, and thus does not create bubbles or voids and does not pose a water tightness problem.