Abstract: Provided herein may be a control logic, semiconductor memory device, method of operating the control logic, and or method of operating the semiconductor memory device. The semiconductor memory device may include a control logic. The control logic may be configured to control a program voltage to be applied to the selected word line. The control logic may be configured to control a pass voltage to be applied to an unselected word line.

Abstract: A gas injection apparatus injecting process gases toward a substrate includes a base part, a first gas injection part on the base part, the first gas injection part to inject a first gas including a reaction-inhibiting functional group, a second gas injection part spaced apart from the first gas injection part in one direction on the base part, the second gas injection part to inject a second gas including a precursor of a specific material, and a third gas injection part spaced apart from the second gas injection part in the one direction on the base part, the third gas injection part to inject a third gas reacting with the precursor of the specific material.

Abstract: Provided herein may be a semiconductor memory device and a method of operating the same. The semiconductor memory device may include a memory cell array including a plurality of memory blocks, each including dummy cells coupled to dummy word lines and normal memory cells coupled to normal word lines, and a peripheral circuit configured to perform an erase operation on a memory block selected from among the plurality of memory blocks. The semiconductor memory device may include control logic configured to control the peripheral circuit so that a pre-program voltage pulse is applied both to the dummy word lines and to the normal word lines, and dummy word line voltages to be applied to the dummy word lines may be respectively controlled while an erase voltage is applied to a common source line of the selected memory block.

Abstract: There are provided a current sensing circuit and a memory device having the same. A current sensing circuit includes a current mirror unit suitable for outputting a first voltage and a second voltage; a chunk current controller suitable for generating the first voltage by generating a current through at least one page buffer; a fail bit counter suitable for adjusting a current at a first node where the first voltage is output in response to fail bits received from the page buffer; an allowed bit counter suitable for adjusting the current at the first node according to predetermined allowed bits; and a target range setting unit suitable for adjusting a current at a second node where the second voltage is output in response to a target code.

Abstract: Disclosed are a silicone rubber composition and a preparation method thereof. The silicone rubber composition comprises a polydimethylvinylsiloxane, a silica filler, a polymethylvinylsiloxane oil, a hydrogen-modified polyorganosiloxane, a platinum-based catalyst, and a polymethylhydrogensiloxane vulcanizing agent.

Abstract: A hot-melt adhesive composition comprises 35 wt % to 40 wt % of petroleum resin, 10 wt % to 14 wt % of polyester elastomer resin, 10 wt % to 14 wt % of ethylene vinyl acetate resin, 14 wt % to 19 wt % of polyether polyol, 15 wt % to 21 wt % of polyester polyol, 8 wt % to 10 wt % of methylene diphenyl diisocyanate, and 0.1 wt % to 0.5 wt % of an amine catalyst, wherein the hot-melt adhesive composition has a melt viscosity of 20,000 cps to 50,000 cps as measured at 150° C.

Abstract: A memory device may include a gate structure including a plurality of gate electrode layers and a plurality of insulating layers alternately stacked on a substrate, a plurality of etching stop layers, extending from the insulating layers respectively, being on respective lower portions of the gate electrode layers; and a plurality of contacts connected to the gate electrode layers above upper portions of the etching stop layers, respectively, wherein respective ones of the etching stop layers include an air gap therein.

Abstract: A washing method of a water treatment apparatus is provided. The washing method includes a wash water inflow operation in which wash water flows into circulation members, and a circulation washing operation in which a circulation modulation circulates the wash water through passages of the water treatment apparatus.

Abstract: According to one embodiment of the present invention, a sealing device of a microfluidic chip and an operation method therefor are provided. The device can comprise: a support part in which the microfluidic chip is arranged; and a heat sealing part applying heat to an inlet part and an outlet part of the microfluidic chip so as to seal the inlet part and the outlet part.

Abstract: A clothes treatment apparatus and a control method thereof are disclosed. The clothes treatment apparatus includes a fixed nozzle device and a moving nozzle device to supply at least one of steam and heated air to clothes. As a result, the clothes may be washed effectively or refreshed.

Abstract: Disclosed is a water treatment apparatus which can extract clean water by means of the pressure of raw water. The disclosed water treatment apparatus comprises: a filter part which filters raw water; a storage part which stores clean water filtered by passing through at least a part of the filter part, the storage part having a first chamber and a second chamber of which the volume changes according to a change in the volume of the first chamber; an extraction part which is installed so as to provide the filtered clean water to a user; and an air supply part which is installed on a flow path connected to the storage part in order to supply air to either one of the first chamber or the second chamber of the storage part.

Abstract: A method of manufacturing a transparent pattern printed steel plate includes forming a printed paint film layer by jetting transparent ink onto at least one surface of a steel plate, and curing the printed paint film layer with ultraviolet light to form a cured printed paint film layer. Further, a method of manufacturing a transparent pattern printed steel plate includes preparing a steel plate having a color painted film layer formed on at least one surface thereof, forming a printed paint film layer by jetting transparent ink onto the color painted film layer, and curing the printed paint film layer to form a cured printed paint film layer.

Abstract: Disclosed are a water storage tank bladder, a manufacturing method therefor, the water storage tank including the bladder, and a water treatment apparatus including the water storage tank. According to one embodiment of the present invention, the water storage tank bladder used in the water storage tank to receive and store water and discharge the stored water has a lower side of which the thickness can be thicker than the thickness of the upper side of the bladder and thicker than the thickness of the lateral sides of the bladder.

Abstract: Provided are photomasks, methods of fabricating the photomasks, and methods of fabricating a semiconductor device by using the photomasks, in which a critical dimension (CD) of a pattern of a specific region of the photomask is corrected to improve the distribution of CDs of the pattern formed on a wafer. The photomasks may include a substrate and a light-blocking pattern formed on the substrate that includes an absorber layer and an anti-reflection coating (ARC) layer. The light-blocking pattern may include at least one of a first corrected area in which a top surface of the absorber layer is exposed, and a second corrected area in which a correction layer is formed on the ARC layer.

Abstract: A clothes treatment apparatus (100) and a control method thereof are disclosed. The clothes treatment apparatus (100) includes a cabinet (1) closed by a door (3) and an accommodation space (2) provided in the cabinet (1), consisting for example of a first accommodation space (21) and a second accommodation space (23), wherein a mechanism chamber (25) is provided. The clothes treatment apparatus (100) includes a fixed nozzle device (4) comprising heated air supply holes (41), steam supply holes (43) and detergent supply holes (45) and a moving nozzle device (5) which reciprocates along a guide part (51). Clothes are held by a hanger (7) in the accommodation space (2).

Abstract: In an embodiment, a semiconductor memory device may include a memory cell array, a plurality of page buffers, and a control logic. The memory cell array may include a plurality of memory cells. The plurality of page buffers may be coupled to a plurality of bit lines of the memory cell array, respectively. The control logic may control the plurality of page buffers to perform a read operation on the memory cell array. Each of the plurality of page buffers may perform data sensing by changing a voltage of a page buffer sensing signal after an internal node is precharged.

Abstract: A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a P type well region and an N type well region formed in a substrate, a gate insulating layer having a non-uniform thickness and formed on the P type well region and the N type well region, a gate electrode formed on the gate insulating layer, a P type well pick-up region formed in the P type well region, and a field relief oxide layer formed in the N type well region between the gate electrode and the drain region.

Abstract: Provided are a gas injection device and substrate processing apparatus using the same. The gas injection device includes a plurality of gas injection units disposed above a substrate support part rotatably disposed within a chamber to support a plurality of substrates, the plurality of gas injection units being disposed along a circumference direction with respect to a center point of the substrate support part to inject a process gas onto the substrates. Wherein each of the plurality of gas injection units includes a top plate in which an inlet configured to introduce the process gas is provided and an injection plate disposed under the top plate to define a gas diffusion space between the injection plate and the top plate along a radius direction of the substrate support part, the injection plate having a plurality of gas injection holes under the gas diffusion space to inject the process gas introduced through the inlet and diffused in the gas diffusion space onto the substrate.

Abstract: There are provided a current sensing circuit and a memory device having the same. A current sensing circuit includes a current mirror unit suitable for outputting a first voltage and a second voltage; a chunk current controller suitable for generating the first voltage by generating a current through at least one page buffer; a fail bit counter suitable for adjusting a current at a first node where the first voltage is output in response to fail bits received from the page buffer; an allowed bit counter suitable for adjusting the current at the first node according to predetermined allowed bits; and a target range setting unit suitable for adjusting a current at a second node where the second voltage is output in response to a target code.

Abstract: Three-dimensional (3D) semiconductor memory devices capable of improving reliability may be provided. For example, a three dimensional (3D) memory device, in which a plurality of memory cell strings are vertically arranged, may include a substrate, a stack structure of alternating a plurality of interlayer dielectric (ILD) layers and a plurality of gate electrodes, at least one of the ILD layers including pores, a vertical structure penetrating the stack structure and electrically connected to the substrate, and a data storage layer between the stack structure and the vertical structure.