Abstract: Disclosed are a CaSO4 based TL detector bonded with phosphorous compound and a method for fabricating thereof. The CaSO4 based TL detector can be fabricated by mixing CaSO4 based TL powder with a phosphorous precursor; molding the mixture powder under pressure; and sintering the molded body. The TL detector has so high TL sensitivity as to effectively measure personnel dose equivalent and low dose detection. It can be also manufactured in various forms and is easily handled, finding numerous applications in personnel and environmental monitoring fields.

Abstract: A method for forming SOI substrates including a SOI layer containing germanium and a strained silicon layer disposed on the SOI layer, comprises forming a relaxed silicon-germanium layer on a first silicon substrate using an epitaxial growth method, and forming a porous silicon-germanium layer thereon. A silicon-germanium epitaxial layer is formed on the porous silicon-germanium layer, an oxide layer is formed on a second silicon substrate, the second silicon substrate is bonded where the oxide layer is formed to the first silicon substrate where the silicon-germanium epitaxial layer is formed. Layers are removed to expose the silicon-germanium epitaxial layer and a strained silicon epitaxial layer is formed thereon. The porous silicon-germanium layer prevents lattice defects of the relaxed silicon-germanium layer from transferring to the silicon-germanium epitaxial layer. Therefore, it is possible to form the silicon-germanium layer and the strained silicon layer of the SOI layer without defects.

Abstract: A MOS transistor having a T-shaped gate electrode and a method for fabricating the same are provided, wherein the MOS transistor includes a T-shaped gate electrode on a semiconductor substrate; an L-shaped lower spacer disposed at both sides of the gate electrode to cover a top surface of the semiconductor substrate; and low-, mid-, and high-concentration impurity regions formed in the semiconductor substrate of both sides of the gate electrode. The high-concentration impurity region is disposed in the semiconductor substrate next to the lower spacer and the mid-concentration impurity region is disposed between the high- and low-concentration impurity regions. A MOS transistor according to the present invention provides a decrease in a capacitance, a decrease in a channel length, and an increase in a cross-sectional area of the gate electrode. At the same time, the mid-concentration impurity region provides a decrease in a source/drain resistance Rsd.

Abstract: A method of forming a semiconductor device includes a liner is conformally stacked on a semiconductor substrate before coating an SOG layer thereon, and then curing the SOG layer, preferably in an ambient of oxygen radicals formed at a temperature of 1000° C. or higher when oxygen and hydrogen are supplied. The oxygen radicals are preferably formed by irradiating ultraviolet rays to ozone or forming oxygen plasma. The SOG layer is preferably made of a polysilazane-based material that may promote a conversion of the SOG layer into a silicon oxide layer.

Abstract: A rolling machine for performing a rolling of different types of teeth mounted on a shaft, is provided with a forming die including a first section and a second section provided with a camming profiled circumferential surface of 360 degree. The circumferential surface is divided into a guide surface of a predetermined angle, a gradual forming surface of a predetermined angle, a finishing section surface of a predetermined angle, and a rotation stop section surface of a predetermined angle, which are angularly positioned in that order on the circumferential surface. The rolling machine is also provided with a power transmitting device for transmitting and disconnecting a driving force to the forming die and a position detecting sensor for controlling a stop timing of the forming die.

Abstract: Disclosed herein is a method for separating and purifying .alpha.-linolenic acid (ALA) from ALA-containing fatty acid mixtures by using a column chromatography, comprises the steps of:packing a column with silver nitrate(AgNO.sub.3)-impregnated silica gel as a stationary phase;passing the ALA-containing fatty acid mixtures through the column to adsorb the fatty acids to the stationary phase in the form of Ag.sup.+ -complexes;eluting the fatty acids with acetone-hexane mixtures; andcollecting the fractions containing ALA having a purity of more than 95%.