Abstract: An LCD device and a method for manufacturing the same is disclosed, in which it is possible to correct a problem of insufficient or excessive supply of liquid crystal in an LCD device by controlling an amount of liquid crystal. The method includes preparing a liquid crystal cell comprised of a first substrate, a second substrate, a liquid crystal layer between the first and second substrates, and a first sealant formed in the periphery of the liquid crystal layer between the first and second substrates; measuring an amount of liquid crystal provided to the inside of liquid crystal cell; forming an inlet for liquid crystal in the first sealant; and regulating the amount of liquid crystal by supplying or discharging the liquid crystal through the inlet; and sealing the inlet.

Abstract: An LCD device includes plurality of gate lines and data lines crossing each other to define pixel regions on a substrate. A thin film transistor (TFT) resides at a crossing portion of the gate lines and the data lines and a pixel electrode is electrically connected with the TFT. The TFT includes a gate electrode, a gate insulation layer on the gate electrode and a semiconductor layer on the gate insulation layer. A portion of the data line and the semiconductor layer form a composite layer between adjacent pixel electrodes in which a line width of data line is the same as a line width of semiconductor layer. A method of fabricating the LCD device includes etching a passivation layer using a mask pattern and etching the semiconductor layer using the mask pattern and a portion of the data line as an etch mask to form the composite layer.

Abstract: Disclosed herein are a thermoluminescent dosimeter for radiation monitoring, comprising LiF doped with Mg, Cu and Si, and a fabrication method thereof. The LiF:Mg,Cu,Si thermoluminescent dosimeter is fabricated by heating a LiF-based thermoluminescent powder material having a composition of LiF mother material, 0.1-0.5 mol % of a Mg compound, 0.001-0.05 mol % of a Cu compound and 0.5-1.3 mol % of a Si compound to a temperature of 900-1200° C. to melt the LiF-based material, cooling the melted material, compression-molding the cooled material, sintering the molded material, cooling the sintered material, and then annealing the cooled material. The thermoluminescent dosimeter has high thermal stability and thus maintains constant thermoluminescence sensitivity even when it is annealed at a high temperature of more than 240° C.

Abstract: An in-plane switching mode liquid crystal display device includes a plurality of gate lines and data lines defining a plurality of pixel regions, a driving device disposed within each of the pixel regions, at least one first electrode having a first width and at least one second electrode having a second width both arranged within the pixel region, and at least one third electrode having a third width overlapping at least one of the first and second electrodes to form a storage capacitor.

Abstract: An LCD device and a method for manufacturing the same is disclosed, in which it is possible to correct a problem of insufficient or excessive supply of liquid crystal in an LCD device by controlling an amount of liquid crystal. The method includes preparing a liquid crystal cell comprised of a first substrate, a second substrate, a liquid crystal layer between the first and second substrates, and a first sealant formed in the periphery of the liquid crystal layer between the first and second substrates; measuring an amount of liquid crystal provided to the inside of liquid crystal cell; forming an inlet for liquid crystal in the first sealant; and regulating the amount of liquid crystal by supplying or discharging the liquid crystal through the inlet; and sealing the inlet.

Abstract: The present invention provides a liquid crystal display device and a method of fabricating the same capable of reducing the number of mask processes.

Abstract: A liquid crystal display (LCD) device and its fabrication method includes providing a substrate divided into pixel part and pad parts; forming a gate electrode and a gate line at the pixel part through a first masking process; forming a first insulation film; forming an active pattern and source and drain electrodes at an upper portion of the gate electrode of the pixel part and forming a data line substantially crossing the gate line to define a pixel region through a second masking process; forming a pixel electrode directly electrically connected with the drain electrode at the pixel region of the pixel part through a third masking process; and attaching first and second substrates. A pixel electrode is formed to directly electrically connect with a drain electrode by selectively etching a transparent conductive film without forming a contact hole.

Abstract: A liquid crystal display and a fabricating method thereof are provided. The liquid crystal display includes a first substrate having a pixel portion and a pad portion; a gate line and a data line crossing each other to define the pixel portion at the pixel portion; a transistor adjacent to a crossing of the gate line and the data line, the transistor including a gate electrode, a source electrode and a drain electrode; an insulating layer above the source electrode and the drain electrode, the insulating layer exposing a lateral side of the drain electrode; a pixel electrode in contact with the lateral side of the drain electrode; a second substrate attached to the first substrate; and a liquid crystal layer between the first substrate and a second substrate.

Abstract: A method of fabricating a liquid crystal display device includes: preparing a first substrate in which a plurality of first panels is formed; preparing a second substrate in which a plurality of second panels is formed; forming a seal pattern around an outer edge of the panel, the seal pattern defining an active region and a dummy region and having at one side a protruding portion extending to the dummy region; dropping liquid crystal more than the reference amount to the active region; bonding the first and second substrates together by the seal pattern; separating a plurality of liquid crystal panels by cutting the first and second substrates, the liquid crystal panels being formed by bonding the first and second panels; and removing surplus liquid crystal from the liquid crystal panel by pressurizing the liquid crystal panel.

Abstract: A method of forming a silicon-on-insulator (SOI) semiconductor substrate includes implanting hydrogen ions into a support substrate to form a microbubble layer apart from a surface of the support substrate, forming an SOI layer on the microbubble layer, forming a diffusion barrier layer over the SOI layer, forming a buried oxide layer on a handle substrate, contacting the diffusion barrier layer with the buried oxide layer to be bonded, and annealing the bonded support and handle substrates to separate the support substrate from the SOI layer, wherein the diffusion barrier layer is formed by an insulating layer having a lower impurity diffusion coefficient as compared with the buried oxide layer.

Abstract: A silicon-on-insulator (SOI) semiconductor substrate includes a semiconductor substrate, a buried oxide layer formed on the semiconductor substrates an SOI layer formed on the buried oxide layer, and a diffusion barrier layer interposed between the buried oxide layer and the SOI layer, wherein the diffusion barrier layer is an insulating layer having a lower impurity diffusion coefficient as compared with the buried oxide layer.

Abstract: There is provided a method of preparing biocompatible silicon nanoparticles, which comprises the steps of forming a silicon nanoparticle colloid by ultrasonic treatment of Si-containing Zintl salt in diethylene glycol diethyl ether (DGDE), and introducing hydroxyl groups into the surface of the silicon nanoparticle by treating the silicon nanoparticle colloid with a halogenated hydrogen solution. The method of the present invention can easily mass-produce silicon nanoparticles having high dispersion stability in an aqueous solution and biocompatibility in a high yield.

Abstract: A method for fabricating an LCD device includes forming sequentially a first conductive layer, a first insulation layer, a semiconductor layer, and an ohmic contact layer on a first substrate; forming a gate line by patterning the first conductive layer, the first insulation layer, the semiconductor layer, and the ohmic contact layer; exposing a first gate pad electrode connected with the gate line; insulating the gate line; forming a data line that intersects the gate line, wherein an electrode part is formed extending from the data line such that the electrode part is formed over the semiconductor layer and the ohmic layer, and defines an active pattern; forming a transparent electrode layer on the substrate including the electrode part; and forming source, drain, and pixel electrodes simultaneously by patterning at least one of the transparent electrode layer, the electrode part, and the ohmic contact layer.

Abstract: A method of forming an SOI semiconductor substrate and the SOI semiconductor substrate formed thereby, is provided. The method includes forming sequentially buried oxide, diffusion barrier and SOI layers on a semiconductor substrate. The diffusion barrier layer is formed by an insulating layer having a lower impurity diffusion coefficient as compared with the buried oxide layer. The diffusion barrier layer serves to prevent impurities implanted into the SOI layer from being diffused into the buried oxide layer or the semiconductor substrate.

Abstract: An organic electroluminescence display device and a method for fabricating the same is described. The organic electroluminescence display device comprises pixels defined by a gate line and a data line perpendicular to the gate line, a switching device and a driving device formed in the unit pixel, a first power line, a transparent electrode layer and a conductive electrode layer for supplying a driving signal to the driving device, a storage electrode overlapped with the first power line such that an insulating layer is interposed therebetween, and an organic electroluminescence layer.

Abstract: An IPS mode LCD device and a method for fabricating the same are disclosed. A switching device is formed at each unit pixel and then a passivation layer is formed thereon. A first concave pattern and a second concave pattern at each unit pixel by using one mask are formed, and a common electrode is formed in the first concave pattern and a pixel electrode is formed in the second concave pattern. Accordingly, the entire fabrication process is simplified.

Abstract: A liquid crystal display device includes an upper substrate, a lower substrate, a liquid crystal layer between the upper and lower substrates, a transparent electrode consisting of at least two layers of transparent material provided on at least one of the upper and lower substrates and a spacer material jetted onto the transparent electrode by an ink-jet system, wherein the spacer material has a hydrostatic property different from one of the at least two layers of the transparent electrode.

Abstract: A thin film transistor liquid crystal display is designed such that TFTs for driving green pixels are formed in the blue pixel regions. This improves the overall brightness of the liquid crystal display based on the human view-sensitive characteristics.

Abstract: The disclosure concerns a pellet type LiF element for a thermoluminescent dosimetry (TLD) and its preparation. More particularly, the disclosure concerns the pellet type LiF element for a thermoluminescent dosimetry (TLD) which includes 0.35˜0.12% by mole of Mg source; 0.08˜0.001% by mole of Cu source; 1.3˜0.5% by mole of Na source; and 1.3˜0.5% by mole of Si source as dopants. The pellet type LiF element according to the present invention shows excellent sensitivity and has the preferred glow curve with a simple and single main peak.

Abstract: A method for fabrication a substrate for a liquid crystal display device includes: forming a color filter layer on a substrate; coating an organic layer on the color filter layer; irradiating a first light onto the organic layer; irradiating a second light onto the organic layer through a mask having a transmitting portion and a shielding portion, an energy density of the first light smaller than an energy density of the second light; and forming an overcoat layer and a column spacer by developing the organic layer.